Справочник MOSFET. FDS4953

 

FDS4953 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS4953
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 132 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

FDS4953 Datasheet (PDF)

 ..1. Size:96K  fairchild semi
fds4953.pdfpdf_icon

FDS4953

May 2002 FDS4953 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5 A, 30 V R = 55 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 95 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave d

 9.1. Size:113K  fairchild semi
fds4935a.pdfpdf_icon

FDS4953

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran

 9.2. Size:158K  fairchild semi
fds4935bz.pdfpdf_icon

FDS4953

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

 9.3. Size:154K  onsemi
fds4935bz.pdfpdf_icon

FDS4953

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

Другие MOSFET... FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , STP75NF75 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A .

History: HM730F | PSMG100-05 | HGI090NE6AL | FDB12N50TM | 2SK4069-ZK-E1-AY | SDD04N60 | MMSF3P02HDR2

 

 
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