All MOSFET. FDS4953 Datasheet

 

FDS4953 Datasheet and Replacement


   Type Designator: FDS4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SO8
 

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FDS4953 Datasheet (PDF)

 ..1. Size:96K  fairchild semi
fds4953.pdf pdf_icon

FDS4953

May 2002 FDS4953 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5 A, 30 V R = 55 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 95 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave d

 9.1. Size:113K  fairchild semi
fds4935a.pdf pdf_icon

FDS4953

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran

 9.2. Size:158K  fairchild semi
fds4935bz.pdf pdf_icon

FDS4953

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

 9.3. Size:154K  onsemi
fds4935bz.pdf pdf_icon

FDS4953

September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery

Datasheet: FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , STP75NF75 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A .

History: TPA60R530M | HUF75531SK8T | DHI029N08 | HUFA75343S3ST | KDS4953 | IPB530N15N3G

Keywords - FDS4953 MOSFET datasheet

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