FDS4953 MOSFET Datasheet: P-Ch, 30V, 5A. Full specification with pinout and replacement list

FDS4953 Specs and Replacement

   Type Designator: FDS4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SO8

FDS4953 substitution

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FDS4953 datasheet

..1. Size:96K fairchild semi
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May 2002 FDS4953 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5 A, 30 V R = 55 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 95 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave d... See More ⇒

9.1. Size:113K fairchild semi
fds4935a.pdf pdf_icon

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran... See More ⇒

9.2. Size:158K fairchild semi
fds4935bz.pdf pdf_icon

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery... See More ⇒

9.3. Size:154K onsemi
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