FDS4953 Datasheet. Specs and Replacement

Type Designator: FDS4953  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 6 nC

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SO8

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FDS4953 datasheet

 ..1. Size:96K  fairchild semi
fds4953.pdf pdf_icon

FDS4953

May 2002 FDS4953 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5 A, 30 V R = 55 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 95 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave d... See More ⇒

 9.1. Size:113K  fairchild semi
fds4935a.pdf pdf_icon

FDS4953

March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 7 A, 30 V RDS(ON) = 23 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 35 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ran... See More ⇒

 9.2. Size:158K  fairchild semi
fds4935bz.pdf pdf_icon

FDS4953

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery... See More ⇒

 9.3. Size:154K  onsemi
fds4935bz.pdf pdf_icon

FDS4953

September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery... See More ⇒

Detailed specifications: FDR8508P, FDR856P, FDR858P, FDS3570, FDS3580, FDS4410, FDS4435, FDS4435A, IRF9540, FDS5680, FDS5690, FDS6375, FDS6570A, FDS6575, FDS6576, FDS6612A, FDS6614A

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