H10N65E - описание и поиск аналогов

Spec. No. MOS200906 HI-SINCERITY Issued Date 2009.03.23 Revised Date 2009.08.05 MICROELECTRONICS CORP. Page No. 1/6 H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (650V,10A) Package Code E Pin 1 Gate Pin 2 & Tab Drain Applications Pin 3 Source 3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable P

10N65 Series N-Channel MOSFET 9.5A, 650V, N H FQP10N65C H10N65P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 10N65 FQPF10N65C H10N65F F TO-220FP 10N65 Series Pin Assignment Features ID=9.5A Originativ

CO-PAK IGBT SGH10N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 25 (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

Spec. No. MOS200902 HI-SINCERITY Issued Date 2009.01.20 Revised Date 2009.08.05 MICROELECTRONICS CORP. Page No. 1/5 H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (600V,10A) Package Code E Pin 1 Gate Pin 2 & Tab Drain Applications Pin 3 Source 3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable Po

10N60 Series N-Channel MOSFET 9.5A, 600V, N H FQP10N60C H10N60P P TO-220P HAOHAI 50Pcs 1000Pcs 5000Pcs 10N60 FQPF10N60C H10N60F F TO-220F 10N60 Series Pin Assignment Features ID=9.5A Originative New De