2SK1016 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1016
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: TO3P
2SK1016 Datasheet (PDF)
2sk1016.pdf
isc N-Channel MOSFET Transistor 2SK1016DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS
2sk1017.pdf
FUJI POWER MOSFET2SK1017N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings and
2sk1019.pdf
FUJI POWER MOSFET2SK1019N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PL0.3Low on-resistance 0.220.5 Max 53.2No secondary breakdownLow driving powerHigh voltageVGSS= 30V Guarantee230.2 0.21.10.2Applications0.33.00.2 Switching regulators 0.6+0.25.450.2 5.45UPS1. Gate2. Drain DC-DC co
2sk1014-01.pdf
FUJI POWER MOSFET2SK1014-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings
2sk1014.pdf
isc N-Channel MOSFET Transistor 2SK1014DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS
2sk1018.pdf
isc N-Channel MOSFET Transistor 2SK1018DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS
2sk1011.pdf
isc N-Channel MOSFET Transistor 2SK1011DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G
2sk1010.pdf
isc N-Channel MOSFET Transistor 2SK1010DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk1017.pdf
isc N-Channel MOSFET Transistor 2SK1017DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS
2sk1013.pdf
isc N-Channel MOSFET Transistor 2SK1013DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G
2sk1015.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV Gate-Source Voltage 30 V G
2sk1012.pdf
isc N-Channel MOSFET Transistor 2SK1012DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS G
2sk1019.pdf
isc N-Channel MOSFET Transistor 2SK1019DESCRIPTIONDrain Current I =35A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918