AP13N50W - аналоги и даташиты транзистора

 

AP13N50W - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP13N50W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для AP13N50W

 

AP13N50W Datasheet (PDF)

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ap13n50w.pdfpdf_icon

AP13N50W

AP13N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.1. Size:57K  ape
ap13n50r-hf.pdfpdf_icon

AP13N50W

AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize

 7.2. Size:158K  ape
ap13n50r.pdfpdf_icon

AP13N50W

AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14A G RoHS Compliant & Halogen-Free S Description AP13N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 7.3. Size:96K  ape
ap13n50i-hf.pdfpdf_icon

AP13N50W

AP13N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize

Другие MOSFET... 2SK3378 , AP1203AGMT-HF , AP1332GEU-HF , AP1332GEV-HF , AP1333GU , AP1334GEU-HF , AP13N50I-HF , AP13N50R-HF , 7N65 , AP13P15GH-HF , AP13P15GJ-HF , AP13P15GP-HF , AP13P15GS-HF , AP1430GEU6-HF , AP14S50S-HF , AP15N03GH-HF , AP15N03GJ-HF .

History: 4N100G-TF2-T | 4N60KL-TF2-T

 

 
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