isc N-Channel MOSFET Transistor 2SK447FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.24(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Ordering number:EN1420AN-Channel Junction Silicon FET2SK444Video Camera ApplicationsFeatures Package Dimensions Large yfs.unit:mm Small Ciss.2034A Ultralow noise figure.[2SK444] High frequency, low noise amplifier.2.24.00.40.50.40.41 : Source1 2 31.3 1.32 : Gate3 : DrainSANYO : SPA3.03.8nomSpecificationsAbsolute Maximum Rat

Ordering number:EN1419BN-Channel Junction Silicon FET2SK443Video Camera First-Stage ApplicationsFeatures Package Dimensions Large yfs.unit:mm Small Crss.2050A Ultralow noise figure.[2SK443] Ultrasmall-sized package permitting 2SK443-appliedsets to be small-sized. 0.40.1630 to 0.11 0.95 20.951.92.91 : Source2 : Drain3 : GateSANYO :

Ordering number:EN1439BN-Channel Junction Silicon FET2SK445Video Camera 1st Stage ApplicationsFeatures Package Dimensions Large yfs.unit:mm Small Ciss.2005C Ultralow noise figure.[2SK445] High frequency, low-frequency, low noise amplifier.5.04.04.00.450.50.440.451 : Drain2 : Source3 : Gate1 2 3JEDEC : TO-92EIAJ : SC-43SANYO : S

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