AP4409GEM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP4409GEM
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 55 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 860 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: SO8
AP4409GEM Datasheet (PDF)
ap4409gem.pdf
AP4409GEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device
ap4409gep.pdf
AP4409GEP-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovat
ap4409gep-hf.pdf
AP4409GEP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowe
ap4409agem.pdf
AP4409AGEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized devic
ap4409agem-hf.pdf
AP4409AGEM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSS RoHS CompliantSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switch
ap4409ageh-hf.pdf
AP4409AGEH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35VD Lower On-resistance RDS(ON) 8mG Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,
ap4409agm-hf.pdf
AP4409AGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDDD Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15AGS RoHS Compliant & Halogen-FreeSSO-8 SDDescriptionAP4409A series are from Advanced Power innovated design and siliconprocess technol
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918