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AP4569GD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP4569GD
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.8(3.8) A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 70(80) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052(0.09) Ohm
   Тип корпуса: PDIP8

 Аналог (замена) для AP4569GD

 

 

AP4569GD Datasheet (PDF)

 ..1. Size:96K  ape
 ap4569gd.pdf

AP4569GD AP4569GD

AP4569GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Low Gate Charge N-CH BVDSS 40V D2D1D1 Fast Switching Speed RDS(ON) 52m PDIP-8 Package ID 4.8AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1RDS(ON) 90mS1Description ID -3.8AThe

 7.1. Size:115K  ape
 ap4569gm.pdf

AP4569GD AP4569GD

AP4569GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 36mD1D1 RoHS Compliant ID 5.8AG2P-CH BVDSS -40VS2G1S1SO-8RDS(ON) 68mDescription ID -4.2AThe Advanced Power MOSFETs from APEC provide thedesigner with the be

 7.2. Size:117K  ape
 ap4569gh.pdf

AP4569GD AP4569GD

AP4569GHPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10.5AS1G1 RoHS Compliant P-CH BVDSS -40VS2G2RDS(ON) 75mTO-252-4LDescription ID -8AThe Advanced Power MOSFETs from APEC provide t

 9.1. Size:136K  ape
 ap4563gh.pdf

AP4569GD AP4569GD

AP4563GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 36mTO-252-4LDescription ID -7.3AAdvanced Power MOSFETs from APEC provide the de

 9.2. Size:94K  ape
 ap4565gm.pdf

AP4569GD AP4569GD

AP4565GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETSimple Drive Requirement N-CH BVDSS 40V D2D2D2Low On-resistance D2 RDS(ON) 25m D1D1D1D1Fast Switching Performance ID 7.6A G2G2P-CH BVDSS -40VS2S2G1SO-8 S1G1RDS(ON) 33mSO-8 S1Descri

 9.3. Size:84K  ape
 ap4563gm.pdf

AP4569GD AP4569GD

AP4563GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 30mD1D1 RoHS Compliant ID 6.7AG2P-CH BVDSS -40VS2G1S1SO-8RDS(ON) 36mDescription ID -6AThe Advanced Power MOSFETs from APEC provide thedesigner with the best

 9.4. Size:120K  ape
 ap4563gh-hf.pdf

AP4569GD AP4569GD

AP4563GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 36mTO-252-4LDescription ID -7.3AAdvanced Power MOSFETs from APEC provide the de

 9.5. Size:119K  ape
 ap4563agh-hf.pdf

AP4569GD AP4569GD

AP4563AGH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 20m Fast Switching Performance ID 9.6AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -40VG1S2RDS(ON) 36mG2Description ID -7.3ATO-252-4LD1D2Advanced Power MOSFE

 9.6. Size:135K  ape
 ap4563agh.pdf

AP4569GD AP4569GD

AP4563AGH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 20m Fast Switching Performance ID 9.6AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -40VG1S2RDS(ON) 36mG2Description ID -7.3ATO-252-4LAdvanced Power MOSFETs from

 9.7. Size:890K  cn vbsemi
 ap4565gm-30v.pdf

AP4569GD AP4569GD

AP4565GM&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 a

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