AP95T08GP. Аналоги и основные параметры
Наименование производителя: AP95T08GP
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 96 ns
Cossⓘ - Выходная емкость: 850 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: TO-220
Аналог (замена) для AP95T08GP
- подборⓘ MOSFET транзистора по параметрам
AP95T08GP даташит
..1. Size:65K ape
ap95t08gp.pdf 

AP95T08GP Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 7m Fast Switching Characteristic ID 80A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G
8.1. Size:192K ape
ap95t07agp.pdf 

AP95T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID3 170A G S Description AP95T07A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and f
8.2. Size:151K ape
ap95t06gp.pdf 

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno
8.3. Size:57K ape
ap95t07bgp-hf.pdf 

AP95T07BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
8.4. Size:145K ape
ap95t07gs.pdf 

AP95T07GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S TO-263(S) ruggedized device design,
8.5. Size:96K ape
ap95t07gp-hf.pdf 

AP95T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize
8.6. Size:114K ape
ap95t06bgp.pdf 

AP95T06BGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 9m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resista
8.7. Size:149K ape
ap95t07bgp.pdf 

AP95T07BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 75V Simple Drive Requirement RDS(ON) 5m Lower On-resistance RoHS Compliant & Halogen-Free ID 125A G S Description AP95T07B series are from Advanced Power innovated design and silicon process technology to ac
8.8. Size:159K ape
ap95t07gp.pdf 

AP95T07GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description AP95T07 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
8.9. Size:94K ape
ap95t07agp-hf.pdf 

AP95T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID 170A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resi
8.10. Size:63K ape
ap95t06gs p-hf.pdf 

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge
8.11. Size:95K ape
ap95t07bgs-hf.pdf 

AP95T07BGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resis
8.12. Size:163K ape
ap95t06gs.pdf 

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno
8.13. Size:149K ape
ap95t06agp.pdf 

AP95T06AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resis
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