Справочник MOSFET. MMBFJ310

 

MMBFJ310 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMBFJ310
   Маркировка: 6T
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6.5 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.06 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Тип корпуса: SOT-23

 Аналог (замена) для MMBFJ310

 

 

MMBFJ310 Datasheet (PDF)

 ..1. Size:165K  motorola
mmbfj309 mmbfj310.pdf

MMBFJ310
MMBFJ310

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ309LT1/DJFET VHF/UHF Amplifier TransistorMMBFJ309LT1NChannel2 SOURCEMMBFJ310LT13GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDS 25 VdcCASE 31808, STYLE 10GateSource Voltage VGS 25 Vdc SOT23 (TO236AB)Gate Current IG 10 mAdcTHERMAL CHARACTERISTICS

 ..2. Size:207K  fairchild semi
j309 j310 mmbfj309 mmbfj310.pdf

MMBFJ310
MMBFJ310

December 2010J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.J309 MMBFJ309J310 MMBFJ310GSSOT-23G TO-92 Mark MMBFJ309

 ..3. Size:152K  fairchild semi
mmbfj310.pdf

MMBFJ310
MMBFJ310

J309 MMBFJ309J310 MMBFJ310GSG TO-92S SOT-23NOTE: Source & DrainDD are interchangeableMark: 6U / 6TN-Channel RF AmplifierThis device is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.Absolute Maximum Ratings* TA = 25C unless otherwise noted

 0.1. Size:144K  onsemi
mmbfj309lt1 mmbfj310lt1.pdf

MMBFJ310
MMBFJ310

MMBFJ309LT1G,MMBFJ310LT1GJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGSRating Symbol Value Unit1 DRAINDrain-Source Voltage VDS 25 VdcGate-Source Voltage VGS 25 VdcGate Current IG 10 mAdc3SOT-23 (TO-236)THERMAL CHARACTERISTICS CASE 31

 0.2. Size:101K  onsemi
smmbfj310lt1g smmbfj310lt3g.pdf

MMBFJ310
MMBFJ310

MMBFJ309L, MMBFJ310L,SMMBFJ310LJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andGATEPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1 DRAINCo

 8.1. Size:120K  fairchild semi
mmbfj305.pdf

MMBFJ310
MMBFJ310

July 2011MMBFJ305N-Channel RF AmplifierSOT-23FeaturesG This device is designed primarily for electronic switchingS applications such as low On Resistance analog switching.Marking : 6Q Sourced from process 50.DNote : Drain & Source are interchangeable.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage

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