UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.2 @VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer

isc N-Channel MOSFET Transistor 3N80FEATURESDrain Current I =3.0A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power supplies,converters,AC and DC motor controlsABSOLUTE M

STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F

STB23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTTABSTB23N80K5 800 V 0.28 16 A 190 W Industrys lowest R x area DS(on)3 Industrys best figure of merit (FoM) 1 Ultra low gate charge 100% avalanche tested Zener-protected

STFI13N80K5N-channel 800 V, 0.37 typ.,12 A MDmesh K5 Power MOSFET in an IPAKFP packageDatasheet - production dataFeatures Order code VDS RDS(on) ID PTOTSTFI13N80K5 800 V 0.45 12 A 35 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate Industrys lowest RDS(on) x area123 Industrys best figure of

STFU23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFU23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 321 100% avalanche tested

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 PowerMOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on) ID PTOT31STB13N80K5 190 W3D2PAK21STF13N80K5 35 WTO-220FP800 V 0.45 12 ATABSTP13N80K5190 WSTW13N80K5 Worldwide best FOM (figur

STP23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP23N80K5 800 V 0.28 16 A 190 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicat

STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5N-channel 800 V, 2.8 typ., 2.5 A Zener-protected SuperMESH 5Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on)max ID PTOT31STD3N80K5 60 WDPAKSTF3N80K5 20 W3800 V 3.5 2.5 A21TABSTP3N80K560 WTO-220FPSTU3N80K5TAB TO-220 worldwide bes

STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

March 2001TMQFETFQAF13N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 800V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 68 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailore

September 2000TMQFETFQPF3N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tail

March 2001TMQFETFQA13N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 68 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailore

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

July 2007 QFETFQA13N80_F109800V N-Channel MOSFETFeatures Description 12.6A, 800V, RDS(on) = 0.75 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especially tailored to

September 2000TMQFETFQP3N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tailo

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

IXFH23N80Q VDSS = 800 VHiPerFETTMIXFT23N80Q ID25 = 23 APower MOSFETs RDS(on) = 0.42 Q-ClassN-Channel Enhancement Mode trr 250 ns Avalanche Rated,Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 V(TAB)VGS Continuous 30

VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11

IXFH 13N80Q VDSS = 800 VHiPerFETTMIXFT 13N80Q ID25 = 13 APower MOSFETsRDS(on) = 0.70 WQ ClassN-Channel Enhancement Mode trr 250 nsAvalanche Rated High dv/dt, Low QgPreliminary data sheetTO-268 (D3) (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VGVGS Continuous 20 V(TAB)SVGSM

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 11 N80 800 V 11 A 0.95 WPower MOSFETsIXFH/IXFM 13 N80 800 V 13 A 0.80 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 2

FQA13N80-F109N-Channel QFET MOSFET800 V, 12.6 A, 750 m Features 12.6 A, 800 V, RDS(on) = 750 m (Max.) @ VGS = 10 V,DescriptionID = 6.3 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 68 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 30 pF)planar stripe and DMOS technology. This advanced MOSFET technology has be

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDD03N80ZNChannel Power MOSFET800 V, 4.5 WFeatures ESD Diode-Protected Gate 100% Avalanche Testedhttp://onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAXCompliant800 V 4.5 W @ 10 VABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Value UnitN-ChannelDrain-to-Source Volta

UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 4.2 @ VGS =10V 1.5 General Description The TSM3N80 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU03N80 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU03N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURE Excellent package for good heat dissipation

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF03N80 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION The CJPF03N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURE Excellent package for good heat dissipation Ul

KF3N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for LED Lighting andLC D_A 6.60 + 0.20switching mode power supplies.

KF3N80FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power supplie

AOD3N80800V,2.8A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 900V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.8ADC applications. RDS(ON) (at VGS=10V)

AOTF3N80800V, 2.8A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOTF3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

N RN-CHANNEL MOSFET JCS3N80C Package MAIN CHARACTERISTICS ID 3.0 A VDSS 800 V Rdson-max 4.9 Vgs=10V Qg-typ 15.4nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

SDP03N80SDF03N80aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.800V 3.0A 3.3 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M

SSF3N80D Main Product Characteristics: VDSS 800V RDS(on) 3.8 (typ.) ID 3A Marking and p in TO-252 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF3N80F Main Product Characteristics: VDSS 800V RDS(on) 3.7 (typ.) ID 3A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

BRF3N80(BRCS3N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Low gate chargeLow Crss Fast switching. / Applications DC/DC These devices are

BRD3N80(BRCS3N80D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

BRI3N80(BRCS3N80I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef

RoHS 3N80 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(3A, 800Volts)DESCRIPTION The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A,fast switching speed, low on-state resistance,Dbreakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. suchas sw

Silicon N-Channel Power MOSFET R CS3N80 ARH General Description VDSS 800 V CS3N80 ARH, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

Silicon N-Channel Power MOSFET R CS3N80F A9 General Description VDSS 800 V CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

SEMICONDUCTORFTK3N80P/F/D/ITECHNICAL DATA3 Amps, 800 VoltsPower MOSFETN-CHANNEL MOSFET I :1TO - 251DESCRIPTIONThe FTK 3N80 is a high voltage MOSFET and is designed toD :1have better characteristics, such as fast switching time, low gateTO - 252charge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at hig

SEMICONDUCTORFTK3N80P / FTECHNICAL DATAPower MOSFET3 Amps, 800 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 3N80 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :switchin

DIP Type MOSFETN-Channel MOSFETKX3N80TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 800V ID = 3 A (VGS = 10V) RDS(ON) 5 (VGS = 10V)D Low gate charge ( typical 15 nC) 1.27 0.10 1.52 0.1021 3 Low Crss ( typical 7.0 pF)0.80 0.10 +0.100.50 0.052.40 0.202.54TYP 2.54TYP

SVF3N80M/MJ/F/D 3A800V N SVF3N80M/MJ/F/D NMOSF-CellTMVDMOS AC-DC

MSF3N80 800V N-Channel MOSFET Description The MSF3N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 4.8 )@VGS=10V Gate Char

MS3N80 800V N-Channel MOSFET Description The M3N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge (

CS3N80FA9800V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Epox

HY3N80T / HY3N80FT 800V / 3A800V, RDS(ON)=4.8W@VGS=10V, ID=1.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

SAMWINSW3N80CSW3N80CN-channel MOSFETTO-220F IPAK DPAKBVDSS : 800VFeaturesID : 3.0A High ruggednessRDS(ON) : 4.9ohm RDS(ON) (Max 4.9 )@VGS=10V Gate Charge (Typ 12nC)2 Improved dv/dt Capability 111 3 2 100% Avalanche Tested 23 231. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technol

SW13N80K N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 800V Features ID : 13A High ruggedness RDS(ON) : 0.44 Low RDS(ON) (Typ 0.44)@VGS=10V Low Gate Charge (Typ 42nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source 3 General Description This powe

SW3N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 BVDSS : 800V TO-220F High ruggedness ID : 3A Low RDS(ON) (Typ 3.8)@VGS=10V RDS(ON) : 3.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 Application: DC-DCLEDPC 3 3 3 1 1. Gate 2. Drain 3. Source

Dec 2005BVDSS = 800 VRDS(on) typ HFS3N80ID = 3.0 A800V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area

Jan 2013BVDSS = 800 VRDS(on) typ HFD3N80/HFU3N80ID = 2.5 A800V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD3N80 HFU3N80 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.)

Dec 2005BVDSS = 800 VRDS(on) typ = 4.0 HFP3N80ID = 3.0 A800V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Unrivalled Gate Charge : 17 nC (Typ ) Exten

July 2022BVDSS = 800 VRDS(on) Typ = 3.5 HFS3N80AID = 3.0 A800V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.) Extended Safe Opera

Dec 2005BVDSS = 800 VRDS(on) typ HFH13N80ID = 12.6 A800V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 68 nC (Typ.) Extended Safe Operating Area Lower RDS(

TMD3N80G/TMU3N80GFeaturesVDSS = 880 V @Tjmax Low gate chargeID = 3A 100% avalanche tested Improved dv/dt capability RDS(on) = 4.2 W(max) @ VGS= 10 V RoHS compliant Halogen free package JEDEC QualificationD-PAK DI-PAKGSDevice Package Marking RemarkTMD3N80G/TMU3N80G D-PAK/I-PAK TMD3N80G/TMU3N80G Halogen FreeAbsolute Maximum Ratings Parameter

TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N80 / TMPF3N80 TO-220 / TO-220F TMP3N80 / TMPF3N80 RoHS TMP3N80G / TMPF3N

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80MWMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge performa

Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

CS3N80BF, CS3N80BP nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N80BU ,CS3N80BL,CS3N80BK800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking

SPD3N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=3A(Vgs=10V) R max. at 25oC () V =10V 4.8DS(on) GS Ultra Low Gate Charge Q max. (nC) 22 g Improved dv/dt Capability Q (nC) 3 gs 100% Avalanche Tested Q (nC) 6 gd RoHS compliant Configuration single Applic

HM3N80 Si l i con N- Channel Power MOSFETGeneral Description VDSS 800 V HM3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching c

SFP086N80CC2, SFB083N80CC2 N-MOSFET 80V, 6.6m, 100AFeatures Product Summary Extremely low on-resistance RDS(on)VDS80V Excellent QgxRDS(on) product(FOM)RDS(on)6.6m Qualified according to JEDEC criteria ID 100A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

SFP120N80A,SFB120N80ASFP066N80AC3,SFB063N80AC3 N-MOSFET 80V, 5.5m, 120AFeatures Product Summary Enhancement Mode VDS80V Very Low On-Resistance RDS(on)5.5m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100

SFP066N80C3,SFB063N80C3N-MOSFET 80V, 5.5m, 105AFeatures Product Summary Enhancement ModeVDS80V Very Low On-ResistanceRDS(on)5.5m Fast SwitchingID 105A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche TestedBatt

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD3N80FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc N-Channel MOSFET Transistor AOTF3N80FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =4.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor STF23N80K5FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol