Аналог (замена) для 7N65

 

 

7N65 Datasheet (PDF)

..1. 7n65.pdf Size:358K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

..2. 7n65.pdf Size:1797K _umw-ic

RUMWUMW 7N65UMW 7N65N- MOSN- MOSN- MOSN- MOS TC=25CTC=25TC=25CTC=25CCAbsolute Maximum RatingsTc=25C TO-220/220F/262/263 /220F/262/263/220F/262/263/220F/262/263Absolute Maximum RatingsTc=25C TO-220/220F/262/263Absolute Maximum RatingsTc=25C TO-220Absolute Maximum RatingsT

..3. 7n65.pdf Size:224K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 7N65FEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: RDS(on) = 1.35(Max) @VGS = 10 VAvalanche Energy SpecifiedFast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS High speed

0.1. fcpf067n65s3.pdf Size:563K _1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

0.2. isa07n65a.pdf Size:2783K _1

 0.3. utc7n65l.pdf Size:165K _1

UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

0.4. stw57n65m5 stwa57n65m5.pdf Size:1044K _st

STW57N65M5, STWA57N65M5N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTW57N65M5710 V 0.063 42 ASTWA57N65M5 Worldwide best RDS(on)*area amongst the 32silicon based devices1TO-247 Higher VDSS rating, high dv/dt capabilityTO-24

 0.5. stb57n65m5 stf57n65m5 sti57n65m5 stp57n65m5.pdf Size:1358K _st

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET in IPAK, TO-220, TO-220FP and DPAK packagesDatasheet production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max313STB57N65M521DPAKSTF57N65M5710 V

0.6. stp7n65m2 stu7n65m2.pdf Size:876K _st

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TABR DS(on)Order code VDS ID max STP7N65M2 650 V 1.15 5 A 32 STU7N65M2 650 V 1.15 5 A TAB1TO-220 Extremely low gate charge 32 Excellent output capacitance (Coss) profile IPAK 1 100% avalanche

0.7. std7n65m2.pdf Size:1059K _st

STD7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDTABSTD7N65M2 650 V 1.15 5 A3 Extremely low gate charge1 Excellent output capacitance (Coss) profile 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Inte

0.8. stl57n65m5.pdf Size:1062K _st

STL57N65M5N-channel 650 V, 0.061 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL57N65M5 710 V 0.069 22.5 A(1)D(3)1. The value is rated according to Rthj-case and limited by package 100% avalanche testedPowerFLAT 8x8 HV

0.9. stl17n65m5.pdf Size:1097K _st

STL17N65M5N-channel 650 V, 0.338 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL17N65M5 710 V 0.374 10 A(1)G(1)1. The value is rated according to Rthj-case and limited by D(3)package Worldwide best RDS(on) * area Higher VDSS rating an

0.10. stf7n65m2.pdf Size:899K _st

STF7N65M2N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesRDS(on) Order code VDS max IDSTF7N65M2 650 V 1.15 5 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsFigure 1

0.11. stw57n65m5-4.pdf Size:1194K _st

STW57N65M5-4N-channel 650 V, 0.056 typ., 42 A, MDmesh V Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW57N65M5-4 710 V 0.063 42 A Higher VDS rating4 Higher dv/dt capability321 Excellent switching performance thanks to the extra driving source pinTO247-4 Easy to drive 100% aval

0.12. stw77n65m5.pdf Size:754K _st

STW77N65M5N-channel 650 V, 0.033 , 69 A, MDmesh V Power MOSFETTO-247FeaturesVDSS Type RDS(on) max ID@TjMAXSTW77N65M5 710 V

0.13. tk17n65w.pdf Size:247K _toshiba

TK17N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17N65WTK17N65WTK17N65WTK17N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

0.14. fch077n65f.pdf Size:1384K _fairchild_semi

December 2014FCH077N65FN-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 68 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 126 nC

0.15. fqp7n65c fqpf7n65c.pdf Size:886K _fairchild_semi

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

0.16. fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf Size:885K _fairchild_semi

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

0.17. fch077n65f f085.pdf Size:695K _fairchild_semi

December 2014FCH077N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 m DFeatures Typical RDS(on) = 68 m at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing

0.18. fqb7n65ctm.pdf Size:1031K _fairchild_semi

October 2008QFETFQB7N65C650V N-Channel MOSFETFeatures Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fa

0.19. sihg47n65e.pdf Size:148K _vishay

SiHG47N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.072 Reduced switching and conduction lossesQg max. (nC) 273 Ultra low gate charge (Qg)Qgs (nC) 46Qgd (nC) 79 Avalanche energy rated (UIS)Co

0.20. dmg7n65sct.pdf Size:453K _diodes

DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID BV R DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 650V 1.4@V = 10V 7.7A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automo

0.21. dmg7n65sj3.pdf Size:553K _diodes

DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I DBV R DSS DS(ON) Max High BV Rating for Power Application DSST = +25C C Low Input Capacitance 650V 1.4 @ V = 10V 5.5A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automot

0.22. dmg7n65scti.pdf Size:345K _diodes

DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package TC = +25 High BVDSS Rating for Power Application C ITO220AB Low Input/Output Leakage 650V 1.4@VGS = 10V 7.7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip

0.23. spp07n65c3 spa07n65c3 spi07n65c3 rev1.92.pdf Size:390K _infineon

SPP07N65C3, SPI07N65C3SPA07N65C3CoolMOS Power TransistorV 650 VDSFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 PG-TO

0.24. spp07n65c3 spa07n65c3 spi07n65c3.pdf Size:1106K _infineon

SPA07N65C3 330 = 3:)5 !5%26-6735V 650 VDSFeatureRDS(on) 0.6 + ;L G;KEBJI?ED7GN >?=> KEBI7=; I;9>DEBE=NID 7. A 2 BIG7 BEL =7I; 9>7G=;PGTO220 PGTO220PGTO262 1 -;G?E:?9 7K7B7D9>; G7I;:2 "MIG;C; :v/dt rated3 % ?=> F;7A 9JGG;DI 97F78?B?IN2 211P-TO220-3-31 &CFGEK;: IG7DH9ED:J9I7D9;PTO220

0.25. spw47n65c3.pdf Size:737K _infineon

SPW47N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Worldwide best R in TO247ds,onR 0.07DS(on),max Low gate chargeQ 255 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247-3-1Type Package MarkingSPW47N65C3 PG-TO247

0.26. mcpf07n65.pdf Size:945K _mcc

MCPF07N65Features High Current Rating Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C S

0.27. mcp07n65.pdf Size:379K _mcc

MCP07N65Features High Current Rating Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperatur

0.28. nvhl027n65s3f.pdf Size:601K _onsemi

MOSFET Power,N-Channel, SUPERFET) III,FRFET)650 V, 75 A, 27.4 mWNVHL027N65S3Fwww.onsemi.comDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

0.29. nth027n65s3f.pdf Size:348K _onsemi

NTH027N65S3FPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 75 A, 27.4 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored to

0.30. fch077n65f.pdf Size:646K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.31. fcp067n65s3.pdf Size:355K _onsemi

FCP067N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 44 A, 67 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to

0.32. fch067n65s3.pdf Size:452K _onsemi

FCH067N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 44 A, 67 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 67 mW @ 10 V 44 Acharge performance. This advanced

0.33. nth4l027n65s3f.pdf Size:525K _onsemi

MOSFET Power, N-Channel,SUPERFET) III, FRFET)650 V, 75 A, 27.4 mWNTH4L027N65S3FDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

0.34. fch077n65f-f085.pdf Size:417K _onsemi

MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 54 A, 77 mWFCH077N65F-F085DescriptionSuperFET II MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu

0.35. nthl027n65s3hf.pdf Size:409K _onsemi

NTHL027N65S3HFPower MOSFET, N-Channel,SUPERFET) III, FRFET),650 V, 75 A, 27.4 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON)

0.36. 7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tq2-t 7n65kg-tq2-t 7n65kl-tq2-r 7n65kg-tq2-r.pdf Size:199K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch

0.37. 7n65k.pdf Size:199K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch

0.38. 7n65l-t2q-t 7n65g-t2q-t 7n65l-tq2-r 7n65g-tq2-r 7n65l-tq2-t 7n65g-tq2-t 7n65g-tf3-t.pdf Size:342K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

0.39. 7n65kl-tf3t-t 7n65kg-tf3t-t 7n65kl-tm3-t 7n65kg-tm3-t 7n65kl-tn3-r 7n65kg-tn3-r 7n65kl-t2q-t 7n65kg-t2q-t.pdf Size:264K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of

0.40. 7n65kl-tm3-t 7n65kg-tm3-t 7n65kl-tn3-r 7n65kg-tn3-r 7n65kg-tf2-t 7n65kl-tf3t-t 7n65kg-tf3t-t.pdf Size:268K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s

0.41. 7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t.pdf Size:268K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s

0.42. 7n65z.pdf Size:189K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65Z Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switchin

0.43. 7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t 7n65kg-tf2-t.pdf Size:264K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of

0.44. 7n65a.pdf Size:293K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high ef

0.45. 7n65l-tn3-r 7n65g-tn3-r 7n65l-t2q-t 7n65g-t2q-t 7n65l-tq2-t 7n65g-tq2-t 7n65l-tq2-r 7n65g-tq2-r 7n65g-tm3-t.pdf Size:402K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.

0.46. 7n65l-ta3-t 7n65g-ta3-t 7n65l-tf1-t 7n65g-tf1-t 7n65l-tf2-t 7n65g-tf2-t 7n65l-tf3-t.pdf Size:342K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

0.47. 7n65l-ta3-t 7n65g-ta3-t 7n65l-tf1-t 7n65g-tf1-t 7n65l-tf3-t 7n65g-tf3-t 7n65l-tf3t-t 7n65g-tf3t-t 7n65l-tm3-t.pdf Size:402K _utc

UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.

0.48. tsm7n65ci.pdf Size:395K _taiwansemi

TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 650 1.2 @ VGS =10V 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

0.49. tsm7n65cz.pdf Size:350K _taiwansemi

TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe

0.50. cjpf07n65.pdf Size:368K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF07N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast 1. GATE recovery time. Desighed for high volta

0.51. cjp07n65.pdf Size:550K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast 1. GATE recovery time. Desighed for high vo

0.52. kf7n65p-f.pdf Size:579K _kec

KF7N65P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N65PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection and switching mode power suppli

0.53. kf7n65fm.pdf Size:381K _kec

KF7N65FMSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

0.54. apt47n65bc3g.pdf Size:179K _microsemi

APT47N65BC3600V 47A 0.070Super Junction MOSFETCOOLMOSPower SemiconductorsD3 Ultra low RDS(ON) Increased Power Dissipation Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT47N65BC3 UNITVDSSDrain-So

0.55. apt97n65b2c6 apt97n65lc6.pdf Size:144K _microsemi

APT97N65B2C6 APT97N65LC6 650V 97A 0.041APT97N65B2C6COOLMOSPower Semiconductors Super Junction MOSFET T-MaxTO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT97N65LC6 Extreme dv/dt RatedDGUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

0.56. cep07n65 ceb07n65 cef07n65.pdf Size:432K _cet

CEP07N65/CEB07N65CEF07N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP07N65 650V 1.3 7A 10VCEB07N65 650V 1.3 7A 10VCEF07N65 650V 1.3 7A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER

0.57. ceu07n65a ced07n65a.pdf Size:401K _cet

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

0.58. ced07n65a ceu07n65a.pdf Size:400K _cet

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

0.59. cep07n65a ceb07n65a cef07n65a.pdf Size:375K _cet

CEP07N65A/CEB07N65ACEF07N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP07N65A 650V 1.45 7A 10VCEB07N65A 650V 1.45 7A 10VCEF07N65A 650V 1.45 7A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GCEB SERIESCEP SERIES CE

0.60. wnm07n65-f.pdf Size:1606K _willsemi

WNM07N65/WNM07N65FWNM07N65/WNM07N65F650V N-Channel MOSFETDescription FeaturesCThe WNM07N65/WNM07N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

0.61. h07n65.pdf Size:161K _hsmc

Spec. No. : MOS200801 HI-SINCERITY Issued Date : 2008.07.22 Revised Date : 2009.0514 MICROELECTRONICS CORP. Page No. : 1/6 H07N65 Series Pin Assignment H07N65 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220ABPackage Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: SourceThis high voltage MOSFET uses an advanced termination scheme

0.62. aod7n65.pdf Size:461K _aosemi

AOD7N65/AOI7N65650V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N65 & AOI7N65 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 750V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

0.63. aotf7n65.pdf Size:408K _aosemi

AOT7N65/AOTF7N65650V, 7A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT7N65 & AOTF7N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

0.64. aoi7n65.pdf Size:461K _aosemi

AOD7N65/AOI7N65650V,7A N-Channel MOSFETGeneral Description Product SummaryThe AOD7N65 & AOI7N65 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 750V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 7Apopular AC-DC applications. RDS(ON) (at VGS=10V)

0.65. aot7n65.pdf Size:408K _aosemi

AOT7N65/AOTF7N65650V, 7A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT7N65 & AOTF7N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

0.66. afn07n65t220ft afn07n65t220t.pdf Size:460K _alfa-mos

AFN07N65 Alfa-MOS 650V / 7A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN07N65 is an N-channel enhancement mode Power 650V/3.5A,RDS(ON)=1.4(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta

0.67. sif7n65c.pdf Size:404K _sisemi

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF7N65CN- MOS / N-CHANNEL POWER MOSFET SIF7N65CN

0.68. sif7n65d.pdf Size:426K _sisemi

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF7N65DN- MOS / N-CHANNEL POWER MOSFET SIF7N65DN

0.69. jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf Size:757K _jilin_sino

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

0.70. jcs7n65.pdf Size:600K _jilin_sino

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch

0.71. mtn7n65fp.pdf Size:335K _cystek

Spec. No. : C436FP Issued Date : 2009.01.22 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.2 MTN7N65FP ID : 7A Description The MTN7N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

0.72. 7n65a 7n65af.pdf Size:1144K _goford

7N65A/7N65AFGOFORDDescription Features - VDSS RDS(ON) ID @10V (typ) 7.5A650V 1 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220

0.73. g7n65.pdf Size:815K _goford

GOFORDG7N65Description Features VDSS RDS(ON) ID @10V (typ) 7.5 A650V 1 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter Units TO

0.74. sdf07n65 sdp07n65.pdf Size:188K _samhop

SDP07N65SDF07N65aS mHop Microelectronics C orp.Ver 3.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.650V 7A 1.2 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Mar

0.75. sdu07n65 sdd07n65.pdf Size:131K _samhop

GreenProduct SDU/D07N65aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.650V 7A 1.2 @ VGS=10V Suface Mount Package.DGGSSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)O

0.76. sp07n65.pdf Size:100K _samhop

GreenProductSP07N65aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.650V 1A 1.68 @ VGS=10VSuface Mount Package.PIN 1 5 6 7 8DFN 5x6 1 2 3 4(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSy

0.77. ssf7n65f.pdf Size:492K _silikron

SSF7N65F Main Product Characteristics: VDSS 650V RDS(on) 1.26 (typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150

0.78. brb7n65.pdf Size:831K _blue-rocket-elect

BRB7N65(BRCS7N65B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

0.79. brf7n65.pdf Size:804K _blue-rocket-elect

BRF7N65(BRCS7N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for

0.80. brfl7n65.pdf Size:838K _blue-rocket-elect

BRFL7N65 Rev.G Dec.-2017 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effic

0.81. cs7n65 a3tdy.pdf Size:644K _crhj

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.82. cs7n65 a4r.pdf Size:283K _crhj

Silicon N-Channel Power MOSFET R CS7N65 A4R General Description VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.83. cs7n65 a4tdy.pdf Size:759K _crhj

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

0.84. cs7n65f a9tdy.pdf Size:750K _crhj

Silicon N-Channel Power MOSFET R CS7N65F A9TDY General Description VDSS 650 V CS7N65F A9TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.85. cs7n65 a3r.pdf Size:279K _crhj

Silicon N-Channel Power MOSFET R CS7N65 A3R General Description VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.86. cs7n65 a0d.pdf Size:760K _crhj

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.87. cs7n65f a9r.pdf Size:269K _crhj

Silicon N-Channel Power MOSFET R CS7N65F A9R General Description VDSS 650 V CS7N65F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.88. cm7n65f.pdf Size:125K _jdsemi

RC76FMN5 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1LDE2 12

0.89. ftk7n65p f dd.pdf Size:578K _first_silicon

SEMICONDUCTORFTK7N65P/F/DDTECHNICAL DATA7.0 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse

0.90. svf7n65f-t.pdf Size:623K _silan

SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

0.91. svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65ct.pdf Size:641K _silan

SVF7N65CF/D/MJ/K/T 7A650V N 2SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 123 TO-262-3L3

0.92. svf7n65t svf7n65f svf7n65s.pdf Size:575K _silan

SVF7N65T/F/S 7A650V N SVF7N65T/F/S N MOS F-CellTM VDMOS AC-DC

0.93. svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65cs svf7n65cfq.pdf Size:626K _silan

SVF7N65CF/D/MJ/K/S/FQ 7A650V N SVF7N65CF/D/MJ/K/S/FQ N MOS F-CellTM VDMOS

0.94. mdf7n65bth.pdf Size:840K _magnachip

MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic

0.95. msf7n65.pdf Size:1111K _bruckewell

MSF7N65 650V N-Channel MOSFET GENERAL DESCRIPTION The MSF7N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES Low On Resistance Simple Drive Requi

0.96. wff7n65s.pdf Size:282K _winsemi

WFF7N65SWFF7N65SWFF7N65SWFF7N65S650V Super-Junction Power MOSFET650V Super-Junction Power MOSFET650V Super-Junction Power MOSFET650V Super-Junction Power MOSFETFeaturesD Ultra low Rdson Ultra low gate charge (typ. Qg =19nC) 100% UIS testedG RoHS compliantSGeneral DescriptionPower MOSFET is fabricated using advanced super junctiontechnology. The re

0.97. wfd7n65l.pdf Size:345K _winsemi

WFD7N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD 7A,650V,R (Max1.38)@V =10VDS(on) GS Low Crss (typical 15pF ) Fast Switching CapabilityG 100%Avalanche Tested Isolation Voltage (V =4000V AC)ISO Maximum Junction Temperature Range(150)SGeneral Description

0.98. fhu7n65b fhd7n65b fhp7n65b fhf7n65b.pdf Size:1075K _feihonltd

N N-CHANNEL MOSFET FHU7N65B/FHD7N65B /FHP7N65B /FHF7N65B MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.2 Fast switching Qg-typ 24nC 100% 100% avalanche tested

0.99. fhp7n65a fhf7n65a.pdf Size:1006K _feihonltd

N N-CHANNEL MOSFET FHP7N65A /FHF7N65A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

0.100. fhp7n65g.pdf Size:979K _feihonltd

N N-CHANNEL MOSFET FHP7N65G MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Improved dv/dt

0.101. slp7n65c slf7n65c.pdf Size:301K _maple_semi

SLP7N65C/SLF7N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

0.102. psu07n65 psd07n65.pdf Size:962K _pipsemi

PSU07N65 PSD07N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),Typ. ID RoHS Compliant 650V 1.1 7.0A RDS(ON),typ.=1.1 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G Charger G D SMPS Standby Power D S S Ordering Information TO-251 TO-252 Part Number Package Brand

0.103. pta07n65b.pdf Size:844K _pipsemi

PTA07N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),Typ. ID RoHS Compliant 650V 1.2 7.0A RDS(ON),typ.=1.2 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package Not to Scale P

0.104. psa07n65.pdf Size:942K _pipsemi

PSA07N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),Typ. ID RoHS Compliant 650V 1.1 7.0A RDS(ON),typ.=1.1 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power G D S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA07N6

0.105. sw7n65d swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf Size:1524K _samwin

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan

0.106. sw47n65k2 swt47n65k2.pdf Size:810K _samwin

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p

0.107. srm7n65.pdf Size:199K _sanrise-tech

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

0.108. srm7n65e1.pdf Size:295K _sanrise-tech

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

0.109. src7n65.pdf Size:512K _sanrise-tech

Datasheet 7A, 650V, Super Junction N-Channel Power MOSFET SRC7N65General Description Symbol The Sanrise SRC7N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable forapplications which require superior power density and outstanding effic

0.110. sl7n65.pdf Size:1635K _slkor

SL7N65N-CHANNEL MOSFET MAIN CHARACTERISTICS7AID650VVDSS1.4R V =10VDS(ON) GS30nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate Low

0.111. tmp7n65z tmpf7n65z.pdf Size:616K _trinnotech

TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A

0.112. tmp7n65az tmpf7n65az.pdf Size:615K _trinnotech

TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

0.113. tmd7n65az tmu7n65az.pdf Size:461K _trinnotech

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A

0.114. tmd7n65z tmu7n65z.pdf Size:463K _trinnotech

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A

0.115. tsp7n65m tsf7n65m.pdf Size:1213K _truesemi

TSP7N65M/TSF7N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7A,650V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and wi

0.116. wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf Size:636K _way-on

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

0.117. cs7n65a4r.pdf Size:283K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65 A4R General Description VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.118. cs7n65a4tdy.pdf Size:759K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

0.119. cs7n65fa9tdy.pdf Size:750K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65F A9TDY General Description VDSS 650 V CS7N65F A9TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.120. cs7n65fa9d.pdf Size:625K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65F A9D General Description VDSS 650 V CS7N65F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.121. cs7n65a3r.pdf Size:279K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65 A3R General Description VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.122. cs7n65fa9r.pdf Size:275K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65F A9R General Description VDSS 650 V CS7N65F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.123. cs7n65a0d.pdf Size:760K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.124. cs7n65a3tdy.pdf Size:644K _wuxi_china

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.125. at7n65s.pdf Size:880K _anbon

AT7N65S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 650V 1.5@10V 7A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-220AB Marking T7N65 XXXXX S G D Document ID Issued Date Revised Date Revision Page. Page 1 AS

0.126. dm7n65c.pdf Size:5591K _desay

0.127. cs7n65f cs7n65p cs7n65k.pdf Size:427K _convert

nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N65F,CS7N65P, CS7N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N65F TO-220F CS7N65

0.128. cs7n65cf cs7n65cp cs7n65cu cs7n65cd.pdf Size:709K _convert

nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N65CF,CS7N65CP, CS7N65CU, CS7N65CD650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N65CF

0.129. fir7n65fg.pdf Size:1832K _first_semi

FIR7N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral Description FIR7N65FG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

0.130. smf7n65.pdf Size:885K _huake

SMF7N65650V N-Channnel MOSFETFeatures 7.0A, 650V, R =1.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

0.131. smd7n65.pdf Size:895K _huake

SMD7N65650V N-Channnel MOSFETFeatures 7.0A, 650V, R =1.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

0.132. lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf Size:1097K _lonten

LNC7N65D\LND7N65D\LNG7N65D\LNH7N65D\ LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo

0.133. si7n65.pdf Size:1547K _cn_szxunrui

N-CHANNEL ENHANCEMENT MODE POWER MOSFET SI7N65Description 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application R = 1.27 (Max.) @ V = 10V, I = 3.5A DC-DC & DC-AC Converters DS(ON) GS D Fast switching Uninterruptible Power Supply (UPS) 100% avalanche tested Switch Mode Low Power Supplies Improved dv/dt capability PackageTO-220 TO-220

0.134. ptf7n65.pdf Size:5563K _cn_puolop

PTF7 N6565 0V/7 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t

0.135. ptd7n65.pdf Size:2318K _cn_puolop

PTD7 N6565 0V/7 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)TO252Absolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

0.136. sk07n65b.pdf Size:972K _cn_shikues

SK07N65B650V N-ch Planar MOSFET BVDSS RDS(ON),Typ. ID General Features 650V 1.2 7.0A RoHS Compliant RDS(ON),typ.=1.2 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G Charger D SMPS Standby Power S Ordering Information TO-252 Part Number PackageSK07N65B TO-252 Absolute Maximum Ratings =25 unle

0.137. sk07n65b-tf.pdf Size:1044K _cn_shikues

0.138. spe7n65g.pdf Size:900K _cn_sinai_power

SPE7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli

0.139. spc7n65g.pdf Size:835K _cn_sinai_power

SPC7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appl

0.140. spd7n65g.pdf Size:920K _cn_sinai_power

SPD7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC () V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli

0.141. ci47n65.pdf Size:797K _tokmas

CI47N65650V Super -Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body DiodeAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings at Tj= 25C unless otherwise notedParameter Symbol Value UnitDrain-Source Voltage (VGS =

0.142. wsr7n65f.pdf Size:1991K _winsok

WSR7N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR7N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 1.3 7Aof the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed

0.143. mt7n65.pdf Size:977K _cn_sino-ic

Oct 2014MT7N65N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V = 650VDSsuch as fast switching time, low gate charge, R = 1 @ V =10V, I =3.7ADS(ON) GS DSlow on-state resistance and have a highrugged avalanche characteristicsPin

0.144. vs7n65af.pdf Size:1012K _cn_vanguard

VS7N65AF 650V/7A N-Channel Advanced Power MOSFET V DS 650 V Features R DS(on),TYP@ VGS=10V 1.1 N-Channel10V Logic Level Control I D 7 A Enhancement mode TO-220F Low on-resistance RDS(on) @ VGS=10V Fast Switching Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS7N65AF TO-220F 7N65AF 50pcs/Tube

0.145. vs7n65ad.pdf Size:993K _cn_vanguard

VS7N65AD 660V/7A N-Channel Advanced Power MOSFET V DS 660 V Features R DS(on),TYP@ VGS=10 V 1.1 N-Channel10V Logic Level Control I D 7 A Enhancement mode TO-252 Low on-resistance RDS(on) @ VGS=10 V Fast Switching Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS7N65AD TO-252 7N65AD 2500pcs/

0.146. smirf7n65.pdf Size:1229K _cn_sps

SMIRF7N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3(VGS=10V, ID=3.5A) on-state resistance, provide superior s

0.147. vbzmb7n65.pdf Size:1378K _cn_vbsemi

VBZMB7N65www.VBsemi.comN-Channel (D-S) Super Junction Power MOSFET 900V FEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.95RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200 COMPLIANT Fast SwitchingQgs (nC) 24Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple

0.148. tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf Size:1062K _cn_wuxi_unigroup

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM

0.149. hm7n65k hm7n65i.pdf Size:501K _cn_hmsemi

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior sw

0.150. hm7n65 hm7n65f.pdf Size:340K _cn_hmsemi

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superio

0.151. hms17n65 hms17n65f hms17n65d.pdf Size:1308K _cn_hmsemi

HMS17N65D, HMS17N65, HMS17N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 210 m gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power app

0.152. hms47n65a.pdf Size:974K _cn_hmsemi

HMS47N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 80 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

0.153. hms7n65i hms7n65k.pdf Size:485K _cn_hmsemi

N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe

0.154. apt47n65bc3.pdf Size:376K _inchange_semiconductor

isc N-Channel MOSFET Transistor APT47N65BC3FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

0.155. spp07n65c3.pdf Size:248K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPP07N65C3ISPP07N65C3FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aS

0.156. dmg7n65sct.pdf Size:260K _inchange_semiconductor

isc N-Channel MOSFET Transistor DMG7N65SCTFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

0.157. fcp067n65s3.pdf Size:207K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP067N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesUPSPower supplySwitching applicationsABSOLUTE MAXIMUM RATIN

0.158. spw47n65c3.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPW47N65C3ISPW47N65C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

0.159. aod7n65.pdf Size:265K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

0.160. fch067n65s3.pdf Size:213K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCH067N65S3FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

0.161. aotf7n65.pdf Size:252K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOTF7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

0.162. stb57n65m5.pdf Size:203K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB57N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

0.163. fcpf067n65s3.pdf Size:248K _inchange_semiconductor

isc N-Channel MOSFET Transistor FCPF067N65S3FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

0.164. spa07n65c3.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA07N65C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

0.165. aoi7n65.pdf Size:274K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOI7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

0.166. dmg7n65sj3.pdf Size:273K _inchange_semiconductor

isc N-Channel MOSFET Transistor DMG7N65SJ3FEATURESDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

0.167. aot7n65.pdf Size:261K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOT7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

0.168. dmg7n65scti.pdf Size:251K _inchange_semiconductor

isc N-Channel MOSFET Transistor DMG7N65SCTIFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

0.169. stw77n65m5.pdf Size:212K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW77N65M5FEATURESWith TO-247 packageLow input capacitance and gate chargeLow gate input resistanceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

0.170. dmt7n65 dmf7n65 dmk7n65 dmg7n65.pdf Size:2930K _dyelec

7N65 650V N-Channel Power MOSFET RDS(ON)

     

 

Список транзисторов

Обновления

MOSFET: SVG104R5NS | SVG104R5NT | RX80N07 | GWM13S65YRX | GWM13S65YRY | GWM13S65YRD | GWM13S65YRE | DTM4415 | 2SK741 | YSF040N010T1A | YSK038N010T1A | YSP040N010T1A | ZM075N03D | KMK1265F | FNK6075K | CSD30N70