Справочник MOSFET. 10N65Z

 

10N65Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 10N65Z

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 50 W

Предельно допустимое напряжение сток-исток |Uds|: 650 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 10 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 145 ns

Выходная емкость (Cd): 135 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.72 Ohm

Тип корпуса: TO-220F1

Аналог (замена) для 10N65Z

 

 

10N65Z Datasheet (PDF)

0.1. 10n65z.pdf Size:202K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

9.1. svf10n65f svf10n65t.pdf Size:601K _1

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SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

9.2. stb10n65k3 stfi10n65k3 stp10n65k3.pdf Size:1300K _st

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

 9.3. stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf Size:1300K _st

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

9.4. fcb110n65f.pdf Size:695K _fairchild_semi

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April 2015FCB110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC

 9.5. fcp110n65f.pdf Size:703K _fairchild_semi

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August 2014FCP110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98

9.6. fch110n65f.pdf Size:1362K _fairchild_semi

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December 2014FCH110N65FN-Channel SuperFET II FRFET MOSFET650 V, 35 A, 110 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg

9.7. ixxh110n65c4.pdf Size:167K _ixys

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Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH110N65C4GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC

9.8. ixyp10n65c3d1m.pdf Size:196K _ixys

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Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1MGenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab)tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR

9.9. ixxn110n65c4h1.pdf Size:218K _ixys

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VCES = 650VXPTTM 650V GenX4TM IXXN110N65C4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M

9.10. ixyp10n65c3d1.pdf Size:217K _ixys

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Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3D1GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VCTabEVCGR TJ = 25C to 175C, RGE

9.11. ixyp10n65c3.pdf Size:214K _ixys

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Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP10N65C3GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTa

9.12. ixxn110n65b4h1.pdf Size:224K _ixys

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VCES = 650VXPTTM 650V GenX4TM IXXN110N65B4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 6

9.13. ixxk110n65b4h1.pdf Size:259K _ixys

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VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)

9.14. ixxx110n65b4h1.pdf Size:259K _ixys

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VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)

9.15. ixxr110n65b4h1.pdf Size:233K _ixys

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VCES = 650VXPTTM 650V GenX4TM IXXR110N65B4H1IC110 = 70Aw/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab)tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCVGES Continuous 20 V Isolated Ta

9.16. 10n65.pdf Size:381K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli

9.17. 10n65k.pdf Size:227K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir

9.18. cjp10n65.pdf Size:375K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP10N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig

9.19. cjpf10n65.pdf Size:390K _jiangsu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s

9.20. kf10n65f.pdf Size:381K _kec

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KF10N65FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

9.21. cep10n65 ceb10n65 cef10n65.pdf Size:385K _cet

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CEP10N65/CEB10N65CEF10N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP10N65 650V 0.85 10A 10VCEB10N65 650V 0.85 10A 10VCEF10N65 650V 0.85 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CE

9.22. h10n65.pdf Size:170K _hsmc

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Spec. No. : MOS200906 HI-SINCERITY Issued Date : 2009.03.23 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H10N65 Series H10N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power MOSFET (650V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable P

9.23. aow10n65.pdf Size:341K _aosemi

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AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

9.24. aotf10n65.pdf Size:203K _aosemi

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AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.25. aot10n65.pdf Size:203K _aosemi

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AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.26. aowf10n65.pdf Size:341K _aosemi

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AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

9.27. afn10n65t220ft afn10n65t220t.pdf Size:526K _alfa-mos

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AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

9.28. sif10n65c.pdf Size:291K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF10N65CN- MOS / N-CHANNEL POWER MOSFET SIF10N65C

9.29. mtn10n65fpg.pdf Size:317K _cystek

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Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

9.30. mtn10n65fp.pdf Size:355K _cystek

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Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

9.31. mtn10n65ea.pdf Size:665K _cystek

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Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

9.32. 10n65a 10n65af.pdf Size:1852K _goford

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10N65A/10N65AFGOFORDDescription Features VDSS RDS(ON) ID @10V (typ) 10A650V 0.72 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220

9.33. ssf10n65.pdf Size:532K _silikron

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SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

9.34. brf10n65.pdf Size:991K _blue-rocket-elect

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BRF10N65(BRCS10N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited f

9.35. brfl10n65.pdf Size:1019K _blue-rocket-elect

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BRFL10N65 Rev.F Dec.-2017 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effi

9.36. cs10n65 a8hd.pdf Size:356K _crhj

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Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

9.37. cs10n65f a9hd.pdf Size:351K _crhj

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Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

9.38. cs10n65 a8r.pdf Size:267K _crhj

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Silicon N-Channel Power MOSFET R CS10N65 A8R General Description VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

9.39. cs10n65f a9r.pdf Size:273K _crhj

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Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

9.40. cm10n65afz.pdf Size:125K _jdsemi

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RCM10N65AFZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 1

9.41. cm10n65az.pdf Size:122K _jdsemi

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RCM10N65AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2

9.42. cm10n65f.pdf Size:125K _jdsemi

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RCM10N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12

9.43. ftk10n65p f dd.pdf Size:283K _first_silicon

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SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul

9.44. svf10n65cfj.pdf Size:290K _silan

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SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

9.45. mdf10n65bth.pdf Size:881K _magnachip

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MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GSquality. Applications MDF10N65B is suitable device for

9.46. ms10n65.pdf Size:854K _bruckewell

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MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150

9.47. msf10n65.pdf Size:1078K _bruckewell

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

9.48. wfp10n65.pdf Size:792K _winsemi

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WFP10N65WFP10N65WFP10N65WFP10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

9.49. wff10n65.pdf Size:801K _winsemi

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WFF10N65WFF10N65WFF10N65WFF10N65Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 10A,650V,R (Max 0.95)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Improved dv/dt capabilityGeneral DescriptionThis

9.50. fhp10n65a fhf10n65a.pdf Size:543K _feihonltd

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N N-CHANNEL MOSFET FHP10N65A/FHF10N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.8 @Vgs=10V 100% 100% avalanche tested Qg-typ 29nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATIONHigh efficiency switch mode pow

9.51. fhp10n65b fhf10n65b.pdf Size:603K _feihonltd

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N N-CHANNEL MOSFET FHP10N65B/FHF10N65B MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.75 @Vgs=10V 100% 100% avalanche tested Qg-typ 30nC dv/dt

9.52. hy10n65t.pdf Size:129K _hy

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HY10N65T / HY10N65FT650V / 10A650V, RDS(ON)=1.0@VGS=10V, ID=5.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

9.53. sw10n65 swp10n65 swf10n65.pdf Size:728K _samwin

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SAMWINSW10N65N-channel MOSFETTO-220F TO-220BVDSS : 650VFeaturesID : 10.0A High ruggednessRDS(ON) : 1.1ohm RDS(ON) (Max 1.1)@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This

9.54. srm10n65.pdf Size:251K _sanrise-tech

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Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

9.55. hfs10n65s.pdf Size:159K _semihow

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March 2014BVDSS = 650 VRDS(on) typ HFS10N65SID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area

9.56. hfs10n65u.pdf Size:302K _semihow

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Oct 2013BVDSS = 650 VRDS(on) typ = 0.8 HFS10N65UID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

9.57. hfp10n65s.pdf Size:172K _semihow

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March 2014BVDSS = 650 VRDS(on) typ HFP10N65SID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

9.58. hfp10n65u.pdf Size:201K _semihow

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March 2013BVDSS = 650 VRDS(on) typ = 0.8 HFP10N65U ID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

9.59. tmp10n65 tmpf10n65.pdf Size:577K _trinnotech

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TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

9.60. tmp10n65a tmpf10n65a.pdf Size:607K _trinnotech

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TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

9.61. cs10n65a8hd.pdf Size:356K _wuxi_china

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Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

9.62. cs10n65fa9hd.pdf Size:351K _wuxi_china

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Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

9.63. au10n65s.pdf Size:1286K _anbon

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AU10N65S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 650V 1.3@10V 10A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-251AB Marking D U10N65S G D S Document ID Issued Date Revised Date Revision Page. Page 1 AS-3

9.64. at10n65s af10n65s ak10n65s ag10n65s.pdf Size:1737K _anbon

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9.65. dm10n65c.pdf Size:6079K _desay

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9.66. cs10n65f cs10n65p cs10n65k.pdf Size:706K _convert

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nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65F,CS10N65P,CS10N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65F TO-220F CS1

9.67. cs10n65ff.pdf Size:401K _convert

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nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65FF TO-220F CS10N65FFAbsolute

9.68. fir10n65fg.pdf Size:1909K _first_semi

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FIR10N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=16pF(Typ.) G Low gate charge : Qg=35nC(Typ.) D S Low RDS(on) : RDS(on)=0.8D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR10N65FFIR10N65F = Specific Device CodeAbsolu

9.69. smf10n65.pdf Size:901K _huake

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SMF10N65650V N-Channnel MOSFETFeatures 10.0A, 650V, R =0.80@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va

9.70. hsf10n65.pdf Size:1531K _huashuo

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HSF10N65 Product Summary Description VDS 650 V The HSF10N65 utilizes the advanced technology and low resistance package to RDS(ON),typ 800 m achieve extremely low on-resistance device which makes the system design an efficient ID 10 A and reliable solution for use in a wide variety of applications. TO220F Pin Configuration High Efficiency 100% EAS Guarante

9.71. aow10n65.pdf Size:299K _inchange_semiconductor

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isc N-Channel MOSFET Transistor AOW10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.72. aotf10n65.pdf Size:255K _inchange_semiconductor

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isc N-Channel MOSFET Transistor AOTF10N65FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

9.73. aot10n65.pdf Size:261K _inchange_semiconductor

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isc N-Channel MOSFET Transistor AOT10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.74. fcb110n65f.pdf Size:254K _inchange_semiconductor

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isc N-Channel MOSFET Transistor FCB110N65FFEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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