All MOSFET. 10N65Z Equivalents Search

UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a... See More ⇒

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch... See More ⇒

STL10N65M2 Datasheet N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Features VDS RDS(on ) max. ID Order code STL10N65M2 650 V 1.00 4.5 A 1 2 Extremely low gate charge 3 4 Excellent output capacitance (COSS) profile PowerFLAT 5x6 HV 100% avalanche tested Zener-protected D(5, 6, 7, 8) 8 7 6 5 Applications Switch... See More ⇒

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August 2014 FCP110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 ... See More ⇒

December 2014 FCH110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg ... See More ⇒

April 2015 FCB110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC... See More ⇒

IKA10N65ET6 TRENCHSTOP IGBT6 IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode C Features and Benefits Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C Short circuit withstand time 3 s Trench and field-stop technology for 650V applications offers G very tight parameter distribution E high rugg... See More ⇒

VCES = 650V XPTTM 650V GenX4TM IXXR110N65B4H1 IC110 = 70A w/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab) tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C VGES Continuous 20 V Isolated Ta... See More ⇒

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1 GenX3TM w/Diode IC110 = 9A VCE(sat) 2.50V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V C Tab E VCGR TJ = 25 C to 175 C, RGE ... See More ⇒

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1M GenX3TM w/Diode IC110 = 7A VCE(sat) 2.6V (Electrically Isolated Tab) tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR ... See More ⇒

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V VGEM Transient 30 V G C ... See More ⇒

VCES = 650V XPTTM 650V GenX4TM IXXN110N65C4H1 IC110 = 110A w/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M ... See More ⇒

VCES = 650V XPTTM 650V GenX4TM IXXN110N65B4H1 IC110 = 110A w/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 6... See More ⇒

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V Tab VGES Continuous 20 V PLUS247 (IXXX) ... See More ⇒

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V Tab VGES Continuous 20 V PLUS247 (IXXX) ... See More ⇒

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3 GenX3TM IC110 = 10A VCE(sat) 2.50V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C Ta... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

FCH110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC) and lower g... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

NTB110N65S3HF MOSFET N Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize VDSS RDS(ON) MAX ID... See More ⇒

NTHL110N65S3F MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(on) MAX ID MAX charge performance. This advanced technology is tailored to... See More ⇒

MOSFET Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A NVB110N65S3F Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize V(BR)DSS RDS(ON) MAX... See More ⇒

NTPF110N65S3HF MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 110 mW @ 10 V 30 A balance technology for outstanding low on-resistance and lower gate charge performance. This advance... See More ⇒

NTP110N65S3HF MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate 650 V 110 mW @ 10 V 30 A charge performance. This advanced... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFET using UTC s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the ... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFET using UTC s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the ... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP10N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, hig... See More ⇒

KF10N65F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli... See More ⇒

CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85 10A 10V CEB10N65 650V 0.85 10A 10V CEF10N65 650V 0.85 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CE... See More ⇒

Spec. No. MOS200906 HI-SINCERITY Issued Date 2009.03.23 Revised Date 2009.08.05 MICROELECTRONICS CORP. Page No. 1/6 H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (650V,10A) Package Code E Pin 1 Gate Pin 2 & Tab Drain Applications Pin 3 Source 3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable P... See More ⇒

AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒

AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state ... See More ⇒

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF10N65C N- MOS / N-CHANNEL POWER MOSFET SIF10N65C ... See More ⇒

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N R N-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE... See More ⇒

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N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max 0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒

Spec. No. C725EA Issued Date 2010.02.25 CYStech Electronics Corp. Revised Date 2010.12.29 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 700V @Tj=150 RDS(ON) 0.85 MTN10N65EA ID 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l... See More ⇒

Spec. No. C725FP Issued Date 2009.06.15 CYStech Electronics Corp. Revised Date 2011.08.15 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.82 MTN10N65FPG ID 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

Spec. No. C725FP Issued Date 2009.06.15 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.82 MTN10N65FP ID 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi... See More ⇒

10N65A/10N65AF GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 10A 650V 0.72 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220... See More ⇒

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BRFL10N65 Rev.F Dec.-2017 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effi... See More ⇒

BRF10N65(BRCS10N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited f... See More ⇒

BRFL10N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Low gate charge, low crss, fast switching,Have good Electromagnetic Interference porformance. / Applications ... See More ⇒

BRB10N65 Rev.E Sep.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , , Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well ... See More ⇒

BRA10N65 Rev.B Sep.-2022 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features , , , Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well ... See More ⇒

Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒

Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario... See More ⇒

Silicon N-Channel Power MOSFET R CS10N65 A8R General Description VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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R CM10N65AZ www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LD E 2 ... See More ⇒

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SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul... See More ⇒

10N65 10A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.86 2 Features Fast switching ESD imp... See More ⇒

F10N65 10A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) ... See More ⇒

SVF10N65T/F/K/S 10A 650V N 2 SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3 ... See More ⇒

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand... See More ⇒

SVF10N65CF/K/FJH 10A 650V N 2 SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 1 3 1. 2.... See More ⇒

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MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for ... See More ⇒

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir... See More ⇒

MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150... See More ⇒

WFP10N65 WFP10N65 WFP10N65 WFP10N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 10A,650V,R (Max 0.95 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Improved dv/dt capability General Description This... See More ⇒

WFF10N65 WFF10N65 WFF10N65 WFF10N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 10A,650V,R (Max 0.95 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Improved dv/dt capability General Description This... See More ⇒

BL10N65A Power MOSFET 1 Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS ... See More ⇒

N N-CHANNEL MOSFET FHP10N65B/FHF10N65B MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.75 @Vgs=10V 100% 100% avalanche tested Qg-typ 30nC dv/dt ... See More ⇒

N N-CHANNEL MOSFET FHP10N65A/FHF10N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.8 @Vgs=10V 100% 100% avalanche tested Qg-typ 29nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode pow... See More ⇒

HY10N65T / HY10N65FT 650V / 10A 650V, RDS(ON)=1.0 @VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S ... See More ⇒

JFPC10N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.8 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withst... See More ⇒

JFPC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

JFFC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc... See More ⇒

10A 650V 10N65H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA10N65HN-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lampballasts based on half bridge to pology. 2. ... See More ⇒

SLD10N65U 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10A, 650V, RDS(on),typ =0.93 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 26nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en- ... See More ⇒

SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒

LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi... See More ⇒

SLF10N65SV 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 10A*, 650V, RDS(on),typ =0.81 planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 27nC) has been especially tailored to minimize conduction loss, pro- Fast switching vide superior switching performance, and withstand high en-... See More ⇒

LEAD FREE Pb RoHS SLP10N65A/SLF10N65A 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on)Typ = 0.745 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 19nC) This advanced technology has been especially tailored - Low Crss ( typical 5.3pF) to minimize on-state resistance, provide superi... See More ⇒

PSA10N65C 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.70 10A RDS(ON),typ.=0.70 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1... See More ⇒

SW10N65D N-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFET Features TO-262 TO-262N TO-220F TO-220SF TO-220FT TO-220 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.9 )@VGS=10V Low Gate Charge (Typ 35nC) RDS(ON) 0.9 Improved dv/dt Capability 100% Avalanche Tested 2 Application UPS,Inverter, 1 1 1 2 2 1 1 1 ... See More ⇒

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio... See More ⇒

SAMWIN SW10N65 N-channel MOSFET TO-220F TO-220 BVDSS 650V Features ID 10.0A High ruggedness RDS(ON) 1.1ohm RDS(ON) (Max 1.1 )@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This... See More ⇒

SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS 650V High ruggedness ID 10A Low RDS(ON) (Typ 0.3 )@VGS=10V RDS(ON) 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application Charge, LED, PC Power 1. Gate 2. Drain 3. Sou... See More ⇒

Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65 General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi... See More ⇒

March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area ... See More ⇒

Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFS10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

March 2014 BVDSS = 650 V RDS(on) typ HFP10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

March 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFP10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

Feb 2023 HFS10N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 10 A Excellent Switching Characteristics RDS(on), Typ 0.82 100% Avalanche Tested Qg, Typ 36.3 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum ... See More ⇒

SL10N65F N-CHANNEL MOSFET MAIN CHARACTERISTICS 10A I D 650V V DSS 0.94 R V =10V DS(ON) GS 35nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate ... See More ⇒

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N... See More ⇒

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A ... See More ⇒

TSP10N65M/TSF10N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 48nC) minimize on-state resistance, provide superior switching High ruggedness performance, a... See More ⇒

R UMW UMW 10N65 UMW 10N65 N- MOS N- MOS N- MOS N- MOS TC=25 C TC=25 C TC=25 C TC=25 C Absolute Maximum Ratings Tc=25 C TO-220 Absolute Maximum Ratings Tc=25 C TO-220 Absolute Maximum Ratings Tc=25 C TO-220 Absolute Maximum Ratings Tc=25 C TO-220/220F/262/263 PARAMETER ... See More ⇒

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax... See More ⇒

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65C WMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM... See More ⇒

WML10 WMK10N6 0N65EM, W 65EM, WMM10N65EM WMN10 WMP10N6 0N65EM, W 65EM, WMO10N65EM 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ... See More ⇒

Silicon N-Channel Power MOSFET R CS10N65F A9HD VDSS 650 V General Description ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario... See More ⇒

Silicon N-Channel Power MOSFET R GN10N65 A4 General Description VDSS 650 V GN10N65 A4, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the double-shield Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

Silicon N-Channel Power MOSFET R CS10N65 A8HD VDSS 650 V General Description ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒

Silicon N-Channel Power MOSFET R CS10N65F A9R General Description VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

ATM10N65TF N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 650V Drain Current 10A DESCRIPTION The ATM10N65TF is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in h... See More ⇒

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AU10N65S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 650V 1.3 @10V 10A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-251AB Marking D U10N65S G D S Document ID Issued Date Revised Date Revision Page. Page 1 AS-3... See More ⇒

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nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N65FF 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N65FF TO-220F CS10N65FF Absolute... See More ⇒

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N65F,CS10N65P,CS10N65K 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N65F TO-220F CS1... See More ⇒

FIR10N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=16pF(Typ.) G Low gate charge Qg=35nC(Typ.) D S Low RDS(on) RDS(on)=0.8 D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR10N65F FIR10N65F = Specific Device Code Absolu... See More ⇒

SMF10N65 650V N-Channnel MOSFET Features 10.0A, 650V, R =0.80 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Va... See More ⇒

HSF10N65 Product Summary Description VDS 650 V The HSF10N65 utilizes the advanced technology and low resistance package to RDS(ON),typ 800 m achieve extremely low on-resistance device which makes the system design an efficient ID 10 A and reliable solution for use in a wide variety of applications. TO220F Pin Configuration High Efficiency 100% EAS Guarante... See More ⇒

JMPF10N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 10A Load Switch RDS(ON) ... See More ⇒

650V 10A Trench and Field Stop IGBT JJT10N65SC Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl... See More ⇒

650V 10A Trench and Field Stop IGBT JJT10N65ST Key performance V =650V CE TO-252 I =10A@T =100 C C V =1.8 V CE(sat) C Features High ruggedness performance G 10 s short circuit capability E Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant Appl... See More ⇒

650V 10A Trench and Field Stop IGBT JJT10N65SCD Key performance TO-263 V =650V CE I =10A@T =100 C C V =1.8 V CE(sat) C Features G High ruggedness performance E 10 s short circuit capability Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant ... See More ⇒

650V 10A Trench and Field Stop IGBT JJT10N65SS Key performance V =650V CE TO-220F I =10A@T =100 C C V =1.8 V CE(sat) Features High ruggedness performance 10 s short circuit capability G C E Positive V temperature coefficient CE (sat) High efficiency for motor control Excellent current sharing in parallel operation RoHS compliant App... See More ⇒

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JMPC10N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 10A Load Switch RDS(ON) ... See More ⇒

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 10A D resulting device has low conduction resistance, R 1.0 DS(on),max superior switching performance and high avalanche Q 34.2 nC g,typ energy. Features Low R DS(on) ... See More ⇒

LND10N65/LNC10N65/LNE10N65/LNF10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 1.0 superior switching performance and high avalanche Qg,typ 34.2 nC energy. Features Low RDS(on) Low gate... See More ⇒

Jingdao Microelectronics co.LTD F10N65 ITO-220ABW 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The F10N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This pow... See More ⇒

PTF1 0N65 65 0V/1 0A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 0.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above... See More ⇒

AGM10N65F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 650 -- -- V Zero Gate Voltage Drain Current V =650V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 30V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage... See More ⇒

SPC10N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=10A(Vgs=10V) R max. at 25oC ( ) V =10V 1.1 DS(on) GS Ultra Low Gate Charge Q max. (nC) 45 g Improved dv/dt Capability Q (nC) 7 gs 100% Avalanche Tested Q (nC) 15 gd RoHS compliant Configuration single App... See More ⇒

WSR10N65F N-Ch MOSFET General Description Product Summery The WSR10N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 0.8 10A of the synchronous buck converter applications . Applications The WSR10N65F meet the RoHS and Green Product requirement , 100% EAS AC/DC ... See More ⇒

SMIRF10N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0 (VGS=10V, ID=5A) on-state resistance, provide superior ... See More ⇒

VBZMB10N65 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy rated (UIS) Qgd (nC) 5.4 Config... See More ⇒

RoHS DGP10N65CTL COMPLIANT IGBT Descrete V 650 V CE I 10 A C V I = A 1.65 V CE(SAT) C 10 Applications Soft switchingapplications Circuit Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, ... See More ⇒

TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1... See More ⇒

Silicon N-Channel Power MOSFET Description The MPF10N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features VDS=10A ID=650V Schematic diagram RDS(on)(typ)=0.6 @VGS=10V,ID=4.0A Low Crss 18.5pF@25V Fast switching Improved dv/dt capability Application ... See More ⇒

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

MPVA10N65F Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 650V, ID=10A l Switch Mode Power Supply (SMPS) l RDS(on) 1.1 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F S Ordering Information Type NO. Marking Package Code MPVA10N6... See More ⇒

MPBX10N65EF 650V-10A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution G C E TO-220 Type Marking Package Code MPBP10N65EF MP10N65EF TO-220-3 MPBA10N65EF MP10N65EF... See More ⇒

10N65 Series N-Channel MOSFET 9.5A, 650V, N H FQP10N65C H10N65P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 10N65 FQPF10N65C H10N65F F TO-220FP 10N65 Series Pin Assignment Features ID=9.5A Originativ... See More ⇒

isc N-Channel MOSFET Transistor FCB110N65F FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

isc N-Channel MOSFET Transistor AOT10N65 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

isc N-Channel MOSFET Transistor AOTF10N65 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

isc N-Channel MOSFET Transistor AOW10N65 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

AP10N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. ... See More ⇒

APJ10N65D (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ10N65D is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 720V IDM =10A... See More ⇒

APJ10N65FITIP (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65F/T/P is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒