All MOSFET. 10N65Z Datasheet

 

10N65Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N65Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 145 nS

Drain-Source Capacitance (Cd): 135 pF

Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm

Package: TO-220F1

10N65Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N65Z Datasheet (PDF)

1.1. 10n65z.pdf Size:202K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

5.1. tmp10n65 tmpf10n65.pdf Size:577K _update

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TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A  Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

5.2. stfi10n65k3.pdf Size:1300K _update

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 3 STB10N65K3 150 W 2 D2PAK 1 STF10N65K3 TO-220FP 650 V 1 Ω 10 A 35 W STFI10N65K3 TAB STP10N65K3 150 W • 100% avalanche tested 3

 5.3. tmp10n65a tmpf10n65a.pdf Size:607K _update

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TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 650V 9.5A <0.82W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N65A / TMPF10N65A TO-220 / TO-220F TMP10N65A / TMPF10N65A RoHS TMP10N65AG / TMPF10N65AG TO-22

5.4. stb10n65k3.pdf Size:1300K _upd

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 3 STB10N65K3 150 W 2 D2PAK 1 STF10N65K3 TO-220FP 650 V 1 Ω 10 A 35 W STFI10N65K3 TAB STP10N65K3 150 W • 100% avalanche tested 3

 5.5. srm10n65.pdf Size:251K _upd

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Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65 General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

5.6. msf10n65.pdf Size:1078K _upd-mosfet

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

5.7. fcb110n65f.pdf Size:695K _upd-mosfet

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April 2015 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 98 nC

5.8. stp10n65k3.pdf Size:1300K _upd-mosfet

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 3 STB10N65K3 150 W 2 D2PAK 1 STF10N65K3 TO-220FP 650 V 1 Ω 10 A 35 W STFI10N65K3 TAB STP10N65K3 150 W • 100% avalanche tested 3

5.9. hy10n65t.pdf Size:129K _upd-mosfet

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HY10N65T / HY10N65FT 650V / 10A 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 • In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S

5.10. afn10n65t220ft afn10n65t220t.pdf Size:526K _upd-mosfet

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AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

5.11. cs10n65fa9hd.pdf Size:351K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS10N65F A9HD VDSS 650 V General Description: ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

5.12. hfp10n65s.pdf Size:172K _update_mosfet

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March 2014 BVDSS = 650 V RDS(on) typ HFP10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

5.13. wff10n65.pdf Size:801K _update_mosfet

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WFF10N65 WFF10N65 WFF10N65 WFF10N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 10A,650V,R (Max 0.95Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(V =4000V AC) ISO � Improved dv/dt capability General Description This

5.14. hfs10n65u.pdf Size:302K _update_mosfet

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Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFS10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

5.15. hfp10n65u.pdf Size:201K _update_mosfet

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March 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFP10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

5.16. hfs10n65s.pdf Size:159K _update_mosfet

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March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area

5.17. cs10n65a8hd.pdf Size:356K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS10N65 A8HD VDSS 650 V General Description: ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.18. fch110n65f.pdf Size:1362K _fairchild_semi

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December 2014 FCH110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg

5.19. fcp110n65f.pdf Size:703K _fairchild_semi

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August 2014 FCP110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 98

5.20. 10n65.pdf Size:381K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicat

5.21. 10n65k.pdf Size:227K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits

5.22. cep10n65 ceb10n65 cef10n65.pdf Size:385K _cet

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CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85? 10A 10V CEB10N65 650V 0.85? 10A 10V CEF10N65 650V 0.85? 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES

5.23. ixxh110n65c4.pdf Size:167K _igbt_a

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Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A ≤ ≤ VCE(sat) ≤ 2.35V ≤ ≤ Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V VGES Continuous ±20 V VGEM Transient ±30 V G C

5.24. ixxn110n65c4h1.pdf Size:218K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXN110N65C4H1 IC110 = 110A w/ Sonic Diode   VCE(sat)    2.35V     tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 E  Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M

5.25. ixyp10n65c3.pdf Size:214K _igbt_a

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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3 GenX3TM IC110 = 10A   VCE(sat)    2.50V     tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M 650 V G C Ta

5.26. ixxk110n65b4h1.pdf Size:259K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 650 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V Tab VGES Continuous ±20 V PLUS247 (IXXX)

5.27. ixyp10n65c3d1.pdf Size:217K _igbt_a

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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1 GenX3TM w/Diode IC110 = 9A   VCE(sat)    2.50V     tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V C Tab E VCGR TJ = 25°C to 175°C, RGE

5.28. ixxx110n65b4h1.pdf Size:259K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 650 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V Tab VGES Continuous ±20 V PLUS247 (IXXX)

5.29. ixyp10n65c3d1m.pdf Size:196K _igbt_a

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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1M GenX3TM w/Diode IC110 = 7A   VCE(sat)    2.6V     (Electrically Isolated Tab) tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR

5.30. ixxr110n65b4h1.pdf Size:233K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXR110N65B4H1 IC110 = 70A w/ Sonic Diode ≤ ≤ VCE(sat) ≤ 2.20V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V G C VGES Continuous ±20 V Isolated Ta

5.31. ixxn110n65b4h1.pdf Size:224K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXN110N65B4H1 IC110 = 110A w/ Sonic Diode   VCE(sat)    2.1V     tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E  VCES TJ = 25°C to 175°C 650 V G VCGR TJ = 25°C to 175°C, RGE = 1M 6

5.32. h10n65.pdf Size:170K _hsmc

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Spec. No. : MOS200906 HI-SINCERITY Issued Date : 2009.03.23 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (650V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source 3 2 • Switch Mode Power Supply 1 3-Lead TO-220FP) • Uninterruptable Powe

5.33. aotf10n65.pdf Size:203K _aosemi

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AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.34. aot10n65.pdf Size:203K _aosemi

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AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.35. aowf10n65.pdf Size:341K _aosemi

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AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 1Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guar

5.36. aow10n65.pdf Size:341K _aosemi

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AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 1Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guar

5.37. sif10n65c.pdf Size:291K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N65C N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N65C

5.38. mtn10n65fp.pdf Size:355K _cystek

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Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp. Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.82Ω MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

5.39. mtn10n65ea.pdf Size:665K _cystek

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Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp. Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 700V @Tj=150℃ RDS(ON) : 0.85Ω MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

5.40. mtn10n65fpg.pdf Size:317K _cystek

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Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp. Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.82Ω MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

5.41. 10n65a 10n65af.pdf Size:1852K _goford

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10N65A/10N65AF GOFORD Description Features • VDSS RDS(ON) ID @ 10V (typ) 10A 650V 0.72Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • Active power factor correction • Uninterruptible Power Supply (UPS) • Electronic lamp ballasts Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter TO-220

5.42. ssf10n65.pdf Size:532K _silikron

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 SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9Ω (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

5.43. brf10n65.pdf Size:991K _blue-rocket-elect

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BRF10N65(BRCS10N65FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited f

5.44. cs10n65 a8hd.pdf Size:356K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65 A8HD VDSS 650 V General Description: ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.45. cs10n65f a9r.pdf Size:273K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65F A9R General Description: VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.46. cs10n65f a9hd.pdf Size:351K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65F A9HD VDSS 650 V General Description: ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

5.47. cs10n65 a8r.pdf Size:267K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65 A8R General Description: VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.48. cm10n65f.pdf Size:125K _jdsemi

10N65Z
10N65Z

R CM10N65F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 2 通态电阻小,输入电容

5.49. cm10n65afz.pdf Size:125K _jdsemi

10N65Z
10N65Z

R CM10N65AFZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容

5.50. cm10n65az.pdf Size:122K _jdsemi

10N65Z
10N65Z

R CM10N65AZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小

5.51. ftk10n65p f dd.pdf Size:283K _first_silicon

10N65Z
10N65Z

SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul

5.52. mdf10n65bth.pdf Size:881K _magnachip

10N65Z
10N65Z

 MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description Features The MDF10N65B MOSFET are produced using advanced  V = 650V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 1.0Ω @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for

5.53. msf10n65.pdf Size:1078K _bruckewell

10N65Z
10N65Z

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

5.54. wfp10n65.pdf Size:792K _winsemi

10N65Z
10N65Z

WFP10N65 WFP10N65 WFP10N65 WFP10N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 10A,650V,R (Max 0.95Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(V =4000V AC) ISO � Improved dv/dt capability General Description This

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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