Справочник MOSFET. 1N65

 

1N65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 1N65
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 9.5 Ohm
   Тип корпуса: TO-220 TO-92 SOT-223 TO-126 TO-251 TO-252 TO-220F DFN-8

 Аналог (замена) для 1N65

 

 

1N65 Datasheet (PDF)

 ..1. Size:315K  utc
1n65.pdf

1N65
1N65

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate 11charge, low on-state resistance and high rugged avalanche TO-220TO-220Fcharacteristics. This power MOSFET is usually used i

 ..2. Size:711K  umw-ic
1n65.pdf

1N65
1N65

RUMW UMW 1N65UMW 1N65N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETTC=25CTC=25CTC=25CTC=25CAbsolute Maximum RatingsTc=25CAbsolute Maximum RatingsTc=25C TO-92/251T/251S/252/223Absolute Maximum RatingsTc=25CA

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msjac11n65y-tp.pdf

1N65
1N65

MSJAC11N65YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 650 VIGSS VDS=0V, VGS =30VGate-Source Leakage Current 100 nAVDS=650V, VGS=0V1IDSSZero Gate Voltage Drain Current AVDS=650V, VGS=0V, TJ=150C100VGS(th) VDS=

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stl11n65m5.pdf

1N65
1N65

STL11N65M5N-channel 650 V, 0.475 typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production dataFeaturesOrder code VDS @ Tj max. RDS(on) max ID67STL11N65M5 710 V 0.530 8.5 A5 Extremely low RDS(on) 4 Low gate charge and input capacitance Excellent switching performance 112TM 100% avalanche testedPowerFLAT 5x5

 0.3. Size:1249K  st
stl31n65m5.pdf

1N65
1N65

STL31N65M5N-channel 650 V, 0.135 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS RDS(on) max IDS(2) Bottom viewS(2)S(2) STL31N65M5 710 V 0.162 15 A(1)G(1)1. The value is rated according to Rthj-case and limited by D(3)package. Worldwide best RDS(on) * area Higher VDSS rating and high d

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stb31n65m5 stf31n65m5 stp31n65m5 stw31n65m5.pdf

1N65
1N65

STB31N65M5, STF31N65M5STP31N65M5, STW31N65M5DatasheetN-channel 650 V, 0.124 , 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO220FP, TO220 and TO-247 packagesFeaturesTABVDS @ TJMAX RDS(on ) max. IDOrder code Package3132STB31N65M5D2PAKD PAK 21TO-220FPSTF31N65M5 TO-220FPTAB710 V 0.148 22 ASTP31N65M5 TO-220STW31N65M5 TO-247332TO-220 2TO-24

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stb11n65m5 std11n65m5 stf11n65m5 stp11n65m5.pdf

1N65
1N65

STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5DatasheetN-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages FeaturesTABTAB32 VDS @311RDS(on)max. IDOrder codeDPAK2D PAKTjmax.TABSTB11N65M5STD11N65M5710 V 0.48 9 A3231 STF11N65M521TO-220TO-220FPSTP11N65M5D(2, TAB) Extremel

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stb31n65m5 stf31n65m5 stfi31n65m5 stp31n65m5 stw31n65m5.pdf

1N65
1N65

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDSS @ TJmax RDS(on) max ID231STB31N65M53TAB 2D2PAK1STF31N65M5TO-220FPSTFI31N65M5 710 V

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std11n65m2 stp11n65m2 stu11n65m2.pdf

1N65
1N65

STD11N65M2, STP11N65M2, STU11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - preliminary dataFeaturesTABTAB3Order codes VDS RDS(on) max ID1STD11N65M2DPAK3STP11N65M2 650 V 0.67 7 A21STU11N65M2TO-220TAB Extremely low gate charge Lower RDS(on) x area vs previous generation

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stb11n65m5 stf11n65m5 stp11n65m5 stu11n65m5.pdf

1N65
1N65

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTAB2VDSS @ RDS(on) 2 3Order codes ID 31TJmax max 132DPAKD2PAK 1STB11N65M5TO-220FPSTD11N65M5TABSTF11N65M5 710 V

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stf11n65k3.pdf

1N65
1N65

STF11N65K3N-channel 650 V, 0.765 , 11 A, TO-220FPSuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF10N65K3 650 V

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stf11n65m2-045y.pdf

1N65
1N65

STF11N65M2(045Y)DatasheetN-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge321 Excellent output capacitance (COSS) profileTO-220FP narrow leads 100% avalanche tested Zener-protectedD(2) Applications

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std11n65m5.pdf

1N65
1N65

STB11N65M5, STD11N65M5STF11N65M5, STP11N65M5N-channel 650 V, 0.43 , 9 A MDmesh V Power MOSFETin D2PAK, DPAK, TO-220FP and TO-220 packagesPreliminary dataFeaturesTABTAB2 2 3VDSS @ RDS(on) 3Order code ID11TJmax maxDPAKD2PAKSTB11N65M5STD11N65M5 TAB710 V

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stl21n65m5.pdf

1N65
1N65

STL21N65M5N-channel 650 V, 0.175 , 17 A PowerFLAT (8x8) HVultra low gate charge MDmesh V power MOSFETFeaturesVDSS @ RDS(on) Type IDS(3) Bottom iewTJmax maxS(3)S(3)G(1)STL21N65M5 710 V

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stf11n65m2 stf11n65m2 stfi11n65m2.pdf

1N65
1N65

STF11N65M2, STFI11N65M2N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTF11N65M2650 V 0.67 7 ASTFI11N65M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation12231 Low gate input resistance2TO-220FPI P

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stf11n65m2 stfi11n65m2.pdf

1N65
1N65

STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF11N65M2 650 V 0.68 7 A 25 W STFI11N65M2 Extremely low gate charge TO-220FP I2PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche teste

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stb21n65m5 stf21n65m5 sti21n65m5 stp21n65m5 stw21n65m5.pdf

1N65
1N65

STB21N65M5, STF21N65M5STI21N65M5, STP21N65M5, STW21N65M5N-channel 650 V, 0.175 , 17 A MDmesh V Power MOSFETD2PAK, TO-220FP, TO-220, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type ID PWTJmax max3231STB21N65M5 17 A 125 W 21TO-220STF21N65M5 17 A(1) 30 WIPAKSTI21N65M5 710 V

 0.16. Size:635K  fairchild semi
fch041n65f f085.pdf

1N65
1N65

November 2014FCH041N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,

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fch041n65f.pdf

1N65
1N65

December 2014FCH041N65FN-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC

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spp11n65c3 spa11n65c3 spi11n65c3 spp11n65c3 spa11n65c3 spi11n65c3 rev.2.91.pdf

1N65
1N65

SPP11N65C3,SPA11N65C3SPI11N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220FP PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPP11N65C3 PG-TO220 Q67

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msjac11n65y.pdf

1N65
1N65

MSJAC11N65YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 650 VIGSS VDS=0V, VGS =30VGate-Source Leakage Current 100 nAVDS=650V, VGS=0V1IDSSZero Gate Voltage Drain Current AVDS=650V, VGS=0V, TJ=150C100VGS(th) VDS=

 0.20. Size:921K  mcc
msju11n65.pdf

1N65
1N65

MSJU11N65Features Very Low FOM RDS(on) Qg Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Super-Junction Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Power MOSFETMaximum Ratings Operating Junction Temperature Ran

 0.21. Size:416K  onsemi
fch041n65f-f085.pdf

1N65
1N65

MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 76 A, 41 mWFCH041N65F-F085DescriptionSuperFET II Mosfet is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu

 0.22. Size:212K  utc
1n65a.pdf

1N65
1N65

UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power su

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1n65l-aa3-r 1n65g-aa3-r 1n65l-ta3-t 1n65g-ta3-t 1n65l-tf3-t 1n65g-tf3-t 1n65l-tm3-t 1n65g-tm3-t 1n65l-tma-t 1n65g-tma-t.pdf

1N65
1N65

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 0.24. Size:328K  utc
1n65l-tn3-r 1n65g-tn3-r 1n65l-t60-k 1n65g-t60-k 1n65l-t92-b 1n65g-t92-b 1n65l-t92-k 1n65g-t92-k 1n65l-k08-5060-r 1n65g-k08-5060-r.pdf

1N65
1N65

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 0.25. Size:133K  jiangsu
cjpf01n65b.pdf

1N65
1N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF01N65B N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 0.26. Size:129K  jiangsu
cjv01n65b.pdf

1N65
1N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N65B N-Channel Power MOSFET TO-92 GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed

 0.27. Size:381K  jiangsu
cju01n65b.pdf

1N65
1N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU01N65B N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.28. Size:135K  jiangsu
cjb01n65b.pdf

1N65
1N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB01N65B N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.29. Size:386K  jiangsu
cjd01n65b.pdf

1N65
1N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD01N65B N-Channel Power MOSFET TO-251-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.30. Size:127K  jiangsu
cjp01n65b.pdf

1N65
1N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP01N65B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 0.31. Size:393K  cet
ceu01n65a ced01n65a.pdf

1N65
1N65

CED01N65A/CEU01N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 0.9A, RDS(ON) = 15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 0.32. Size:395K  cet
ceu01n65 ced01n65.pdf

1N65
1N65

CED01N65/CEU01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

 0.33. Size:369K  cet
cek01n65a.pdf

1N65
1N65

CEK01N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 0.3A, RDS(ON) = 15 @VGS = 10V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.TO-92(Bulk) & TO-92(Ammopack) package.GGDGSDSTO-92(Ammopack) TO-92(Bulk)SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

 0.34. Size:1219K  cet
cek01n65.pdf

1N65
1N65

CEK01N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 0.35A, RDS(ON) = 10.5 @VGS = 10V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.TO-92(Bulk) & TO-92(Ammopack) package.GGDGSDSTO-92(Ammopack) TO-92(Bulk)SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParamet

 0.35. Size:424K  cet
cep01n65 ceb01n65 cef01n65.pdf

1N65
1N65

CEP01N65/CEB01N65 CEF01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP01N65 650V 10.5 1.3A 10VCEB01N65 650V 10.5 1.3A 10VCEF01N65 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SE

 0.36. Size:404K  sisemi
sif1n65c.pdf

1N65
1N65

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF1N65CN- MOS / N-CHANNEL POWER MOSFET SIF1N65CN- MOS / N-CHANN

 0.37. Size:376K  cystek
mtn1n65i3.pdf

1N65
1N65

Spec. No. : C437I3 Issued Date : 2009.01.23 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 9.5 MTN1N65I3 ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resista

 0.38. Size:4333K  goford
gc11n65t gc11n65f gc11n65k.pdf

1N65
1N65

GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON)operation with low gate voltages. This device is suitable for 650V 360m 11 A industrys AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F

 0.39. Size:540K  crhj
cs1n65 a1.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.40. Size:546K  crhj
cs1n65 b1.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.41. Size:525K  crhj
cs1n65 b3.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 B3 General Description VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.42. Size:533K  crhj
cs1n65 a3.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 A3 General Description VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.43. Size:480K  silan
svsp11n65dd2tra svsp11n65fd2 svsp11n65sd2 svsp11n65sd2tr svsp11n65fjdd2 svsp11n65kd2 svsp11n65td2.pdf

1N65
1N65

SVSP11N65D/F/S/FJD/K/TD2 11A, 650V MOS 2 1SVSP11N65D/F/S/FJD/K/TD2 N MOSFET31TO-263-2L MOS 3 1. 2. 3.S

 0.44. Size:320K  silan
svsp11n65afjhd2.pdf

1N65
1N65

SVSP11N65AFJHD2 11A650V MOS 2 SVSP11N65AFJHD2 N MOSFET 1 MOS 3 SVSP11N65AFJHD2 /

 0.45. Size:319K  silan
svsp11n65fjhd2.pdf

1N65
1N65

SVSP11N65FJHD2 11A, 650V MOS 2 SVSP11N65FJHD2 N MOSFET 1 MOS 3SVSP11N65FJHD2 /1.

 0.46. Size:447K  silan
svs11n65dd2tr svs11n65fd2 svs11n65sd2 svs11n65sd2tr svs11n65fjd2.pdf

1N65
1N65

SVS11N65D(F)(S)(FJ)D2 11A650VMOS 2SVS11N65D(F)(S)(FJ)D2 N MOSFET MOS 11 3SVS11N65D(F)(S)(FJ)D2

 0.47. Size:382K  silan
svs11n65t svs11n65f svs11n65k svs11n65s svs11n65str.pdf

1N65
1N65

SVS11N65T/F/K/S 11A, 650V DP MOS 2 SVS11N65T/F/K/S N MOSFET 123 DP MOS 1TO-262-3L 3SVS11N65T/F/K/S /

 0.48. Size:229K  silan
svs11n65fjd2.pdf

1N65
1N65

SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore,

 0.49. Size:781K  magnachip
mdf11n65b.pdf

1N65
1N65

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 0.50. Size:781K  magnachip
mdf11n65bth.pdf

1N65
1N65

MDF11N65B N-Channel MOSFET 650V, 12A, 0.65General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.65 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 0.51. Size:813K  samwin
swp11n65d swf11n65d swu11n65d.pdf

1N65
1N65

SW11N65D N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET TO-220 TO-220F TO-262 BVDSS : 650V Features ID : 11A High ruggedness RDS(ON) : 0.75 Low RDS(ON) (Typ 0.75)@VGS=10V Low Gate Charge (Typ 43nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 1 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Source

 0.52. Size:468K  sanrise-tech
src11n65.pdf

1N65
1N65

Datasheet 11A, 650V, Super Junction N-Channel Power MOSFET SRC11N65General Description Symbol The Sanrise SRC11N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable forapplications which require superior power density and outstanding ef

 0.53. Size:193K  semihow
hfd1n65s.pdf

1N65
1N65

April 2009BVDSS = 650 VRDS(on) typ HFD1N65S / HFU1N65SID = 0.9 A650V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N65S HFU1N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge :

 0.54. Size:238K  semihow
hfb1n65s.pdf

1N65
1N65

Dec 2012BVDSS = 650 VRDS(on) typ HFB1N65SID = 0.3 A650V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

 0.55. Size:658K  slkor
sl11n65cf sl11n65c sl11n65ck.pdf

1N65
1N65

SL11N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 300 m DS(ON)TYP New technology for high voltage device ID 11.5 A Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Swit

 0.56. Size:658K  slkor
sl11n65c.pdf

1N65
1N65

SL11N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 300 m DS(ON)TYP New technology for high voltage device ID 11.5 A Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Swit

 0.57. Size:778K  slkor
sl21n65c.pdf

1N65
1N65

SL21N65CN-Channel Super Junction Power MOSFET V 650 V DSFeatures R 180 m DS(ON) MAXNew technology for high voltage device ID 21 A Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Switched mo

 0.58. Size:324K  ubiq
qm01n65u.pdf

1N65
1N65

QM01N65U 1 2011-05-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65U is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65U meet the RoHS and

 0.59. Size:317K  ubiq
qm01n65l.pdf

1N65
1N65

QM01N65L 1 2011-06-15 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 0.2Amost of the synchronous buck converterapplications . Applications The QM01N65L meet the RoHS and

 0.60. Size:318K  ubiq
qm01n65d.pdf

1N65
1N65

QM01N65D 1 2011-06-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 1.2Amost of the synchronous buck converterapplications . Applications The QM01N65D meet the RoHS and

 0.61. Size:665K  way-on
wml11n65sr wmk11n65sr wmm11n65sr wmn11n65sr wmp11n65sr wmo11n65sr.pdf

1N65
1N65

WML11N65SR, W 65SR, WM SR WMK11N6 MM11N65S WMN11N65SR, WMP11N6 MO11N65S65SR, WM SR 650V 0.5 Su nction Puper Jun Power MOSFETDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge performanc W

 0.62. Size:533K  wuxi china
cs1n65a3.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 A3 General Description VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.63. Size:546K  wuxi china
cs1n65b1.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.64. Size:525K  wuxi china
cs1n65b3.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 B3 General Description VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.65. Size:540K  wuxi china
cs1n65a1.pdf

1N65
1N65

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.66. Size:390K  convert
cs11n65f cs11n65p.pdf

1N65
1N65

nvertSuzhou Convert Semiconductor Co ., Ltd.CS11N65F,CS11N65P650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS11N65F TO-220F CS11N65FCS

 0.67. Size:683K  cn hmsemi
hms11n65k hms11n65i.pdf

1N65
1N65

HMS11N65K/HMS11N65IHMS11N65K/HMS11N65I650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 650V, RDS(on) typ. = 0.38@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

 0.68. Size:876K  cn hmsemi
hms11n65i hms11n65k.pdf

1N65
1N65

HMS11N65I / HMS11N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 0.69. Size:779K  cn hmsemi
hms21n65a.pdf

1N65
1N65

HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

 0.70. Size:703K  cn hmsemi
hms11n65 hms11n65d hms11n65f.pdf

1N65
1N65

HMS11N65/ HMS11N65F/HMS11N65DGeneral Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features New technology

 0.71. Size:817K  cn hmsemi
hms21n65 hms21n65f.pdf

1N65
1N65

HMS21N65,HMS21N65FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications

 0.72. Size:258K  inchange semiconductor
stb31n65m5.pdf

1N65
1N65

Isc N-Channel MOSFET Transistor STB31N65M5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 0.73. Size:260K  inchange semiconductor
stp11n65m5.pdf

1N65
1N65

isc N-Channel MOSFET Transistor STP11N65M5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 0.74. Size:204K  inchange semiconductor
stb21n65m5.pdf

1N65
1N65

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB21N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

 0.75. Size:247K  inchange semiconductor
spp11n65c3.pdf

1N65
1N65

isc N-Channel MOSFET Transistor SPP11N65C3ISPP11N65C3FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 0.76. Size:493K  chongqing pingwei
11n65gs.pdf

1N65
1N65

11N65GS11 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURE 11A,650V,R =0.40@V =10V/5.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityTO-252(DPAK)Absolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT11N65GSDrain-Source Voltage V 650DSSVGate-Source V

 0.77. Size:503K  chongqing pingwei
11n65tfs.pdf

1N65
1N65

11N65TFS11N65TFS11 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURETO-220TF 11A,650V,R =0.36@V =10V/5.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche testedAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT11N65TFSDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSCon

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