All MOSFET. 1N65 Datasheet

 

1N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 9.5 Ohm

Package: TO-220_TO-92_SOT-223_TO-126_TO-251_TO-252_TO-220F_DFN-8

1N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N65 Datasheet (PDF)

1.1. stf11n65m5.pdf Size:1276K _update

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

1.2. stf31n65m5 stfi31n65m5.pdf Size:1658K _update

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STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ TJmax RDS(on) max ID 2 3 1 STB31N65M5 3 TAB 2 D2PAK 1 STF31N65M5 TO-220FP STFI31N65M5 710 V < 0.148 Ω 22 A STP31N65M5 3 2 1 STW31N65M

 1.3. stl11n65m5.pdf Size:1036K _update

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STL11N65M5 N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ M5 Power MOSFET in a PowerFLAT™ 5x5 package Datasheet - production data Features Order code VDS @ Tj max. RDS(on) max ID 6 7 STL11N65M5 710 V 0.530 Ω 8.5 A 5 • Extremely low RDS(on) 4 • Low gate charge and input capacitance • Excellent switching performance 1 12 TM • 100% avalanche tested PowerFLAT 5x5

1.4. stl31n65m5.pdf Size:1249K _update

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STL31N65M5 N-channel 650 V, 0.135 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features Order code VDS RDS(on) max ID S(2) Bottom view S(2) S(2) STL31N65M5 710 V 0.162 Ω 15 A(1) G(1) 1. The value is rated according to Rthj-case and limited by D(3) package. • Worldwide best RDS(on) * area • Higher VDSS rating and high d

 1.5. stf11n65m2 stfi11n65m2.pdf Size:866K _update

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STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STF11N65M2 650 V 0.67 Ω 7 A STFI11N65M2 • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 1 2 2 3 1 • Low gate input resistance 2 TO-220FP I P

1.6. stw31n65m5.pdf Size:1658K _update

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STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ TJmax RDS(on) max ID 2 3 1 STB31N65M5 3 TAB 2 D2PAK 1 STF31N65M5 TO-220FP STFI31N65M5 710 V < 0.148 Ω 22 A STP31N65M5 3 2 1 STW31N65M

1.7. mdf11n65b.pdf Size:781K _update

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 MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip’s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.65Ω @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

1.8. stf11n65m2.pdf Size:866K _upd

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STF11N65M2, STFI11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STF11N65M2 650 V 0.67 Ω 7 A STFI11N65M2 • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 1 2 2 3 1 • Low gate input resistance 2 TO-220FP I P

1.9. stf11n65m5.pdf Size:1276K _upd

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

1.10. std11n65m5.pdf Size:717K _upd

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STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 N-channel 650 V, 0.43 Ω, 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features TAB TAB 2 2 3 VDSS @ RDS(on) 3 Order code ID 1 1 TJmax max DPAK D2PAK STB11N65M5 STD11N65M5 TAB 710 V < 0.48 Ω 9 A STF11N65M5 STP11N65M5 3 3 2 2 1 ■ Worldwide best RDS(on) * area 1 TO-220 TO-

1.11. stp31n65m5.pdf Size:1658K _upd

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STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ TJmax RDS(on) max ID 2 3 1 STB31N65M5 3 TAB 2 D2PAK 1 STF31N65M5 TO-220FP STFI31N65M5 710 V < 0.148 Ω 22 A STP31N65M5 3 2 1 STW31N65M

1.12. stb31n65m5.pdf Size:1658K _upd

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STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ TJmax RDS(on) max ID 2 3 1 STB31N65M5 3 TAB 2 D2PAK 1 STF31N65M5 TO-220FP STFI31N65M5 710 V < 0.148 Ω 22 A STP31N65M5 3 2 1 STW31N65M

1.13. stu11n65m5.pdf Size:1276K _upd

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

1.14. std11n65m2.pdf Size:1172K _upd

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STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 Ω 7 A 2 1 STU11N65M2 TO-220 TAB • Extremely low gate charge • Lower RDS(on) x area vs previous generation

1.15. src11n65.pdf Size:468K _upd

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Datasheet 11A, 650V, Super Junction N-Channel Power MOSFET SRC11N65 General Description Symbol The Sanrise SRC11N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding ef

1.16. stb11n65m5.pdf Size:1276K _upd

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

1.17. stu11n65m2.pdf Size:1172K _upd

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STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 Ω 7 A 2 1 STU11N65M2 TO-220 TAB • Extremely low gate charge • Lower RDS(on) x area vs previous generation

1.18. stp11n65m5.pdf Size:1276K _upd-mosfet

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

1.19. fch041n65f f085.pdf Size:635K _upd-mosfet

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November 2014 FCH041N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 mΩ D Features Typical RDS(on) = 34 mΩ at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing,

1.20. stp11n65m2.pdf Size:1172K _upd-mosfet

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STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 Ω 7 A 2 1 STU11N65M2 TO-220 TAB • Extremely low gate charge • Lower RDS(on) x area vs previous generation

1.21. cs1n65a1.pdf Size:540K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS1N65 A1 General Description: VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.22. cs1n65b1.pdf Size:546K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS1N65 B1 General Description: VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.23. qm01n65d.pdf Size:318K _update_mosfet

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QM01N65D 機密 第 1 頁 2011-06-22 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM01N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 Ω 1.2A most of the synchronous buck converter applications . Applications The QM01N65D meet the RoHS and

1.24. hfd1n65s.pdf Size:193K _update_mosfet

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April 2009 BVDSS = 650 V RDS(on) typ HFD1N65S / HFU1N65S ID = 0.9 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N65S HFU1N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge :

1.25. qm01n65u.pdf Size:324K _update_mosfet

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QM01N65U 機密 第 1 頁 2011-05-25 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM01N65U is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 Ω 1.2A most of the synchronous buck converter applications . Applications The QM01N65U meet the RoHS and

1.26. cs1n65a3.pdf Size:533K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS1N65 A3 General Description: VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.27. hfb1n65s.pdf Size:238K _update_mosfet

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Dec 2012 BVDSS = 650 V RDS(on) typ HFB1N65S ID = 0.3 A 650V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

1.28. cs1n65b3.pdf Size:525K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS1N65 B3 General Description: VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.29. qm01n65l.pdf Size:317K _update_mosfet

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QM01N65L 機密 第 1 頁 2011-06-15 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 Ω 0.2A most of the synchronous buck converter applications . Applications The QM01N65L meet the RoHS and

1.30. stf11n65k3.pdf Size:837K _st

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STF11N65K3 N-channel 650 V, 0.765 ?, 11 A, TO-220FP SuperMESH3 Power MOSFET Features RDS(on) Type VDSS ID Pw max STF10N65K3 650 V < 0.85 ? 11 A 35 W 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Gate charge minimized TO-220FP Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Application Figure 1. Interna

1.31. stb21n65m5 stf21n65m5 sti21n65m5 stp21n65m5 stw21n65m5.pdf Size:1270K _st

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STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.175 ?, 17 A MDmesh V Power MOSFET D2PAK, TO-220FP, TO-220, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID PW TJmax max 3 2 3 1 STB21N65M5 17 A 125 W 2 1 TO-220 STF21N65M5 17 A(1) 30 W I?PAK STI21N65M5 710 V < 0.190 ? 125 W STP21N65M5 17 A 125 W STW21N65M5 125 W 3 2 3 3 1 1 2 1. Limited only by m

1.32. stl21n65m5.pdf Size:958K _st

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STL21N65M5 N-channel 650 V, 0.175 ?, 17 A PowerFLAT (8x8) HV ultra low gate charge MDmesh V power MOSFET Features VDSS @ RDS(on) Type ID S(3) Bottom iew TJmax max S(3) S(3) G(1) STL21N65M5 710 V < 0.190 ? 17 A (1) D(2) 1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate charge PowerFLAT(8x8) HV Low gate input resistance App

1.33. fch041n65f.pdf Size:1373K _fairchild_semi

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December 2014 FCH041N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 226 nC

1.34. spp11n65c3 spa11n65c3 spi11n65c3 rev.2.91.pdf Size:569K _infineon

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SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor V 650 V DS Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPP11N65C3 PG-TO220 Q67040-S4557 11N65C3

1.35. 1n65.pdf Size:315K _utc

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UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1 1 charge, low on-state resistance and high rugged avalanche TO-220 TO-220F characteristics. This power MOSFET is usually used in t

1.36. 1n65a.pdf Size:212K _utc

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UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppl

1.37. cek01n65.pdf Size:1219K _cet

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CEK01N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 ? @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G D G S D S TO-92(Ammopack) TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Sy

1.38. ceu01n65a ced01n65a.pdf Size:393K _cet

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CED01N65A/CEU01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

1.39. ceu01n65 ced01n65.pdf Size:395K _cet

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CED01N65/CEU01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C

1.40. cep01n65 ceb01n65 cef01n65.pdf Size:424K _cet

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CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5? 1.3A 10V CEB01N65 650V 10.5? 1.3A 10V CEF01N65 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S

1.41. cek01n65a.pdf Size:369K _cet

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CEK01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 ? @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G D G S D S TO-92(Ammopack) TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Unit

1.42. sif1n65c.pdf Size:404K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF1N65C N- MOS / N-CHANNEL POWER MOSFET SIF1N65C N- MOS / N-CHANN

1.43. mtn1n65i3.pdf Size:376K _cystek

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Spec. No. : C437I3 Issued Date : 2009.01.23 CYStech Electronics Corp. Revised Date :2011.11.10 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 9.5Ω MTN1N65I3 ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resista

1.44. cs1n65 a1.pdf Size:540K _crhj

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Silicon N-Channel Power MOSFET R ○ CS1N65 A1 General Description: VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.45. cs1n65 a3.pdf Size:533K _crhj

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Silicon N-Channel Power MOSFET R ○ CS1N65 A3 General Description: VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.46. cs1n65 b1.pdf Size:546K _crhj

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Silicon N-Channel Power MOSFET R ○ CS1N65 B1 General Description: VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.47. cs1n65 b3.pdf Size:525K _crhj

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Silicon N-Channel Power MOSFET R ○ CS1N65 B3 General Description: VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.48. mdf11n65bth.pdf Size:781K _magnachip

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1N65

 MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip’s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.65Ω @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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