UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTCs advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35 * Ultra Low Gate C

RoHS IRF22N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET22A, 600VoltsDESCRIPTION The Nell IRF22N60 is a three-terminal silicon devicewith current conduction capability of 22A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 600V, and max. threshold voltage of 5 volts.G They are designed for use in applications such as

PD - 95005SMPS MOSFETIRFP22N60C3PbF Superjunction Power MOSFETAppIicationsl PFC and Primary Switch in SMPSl Uninterruptible Power SupplyVDSS@TJ max RDS(on) typ. IDl High Speed Power Switchingl Hard Switched and High Frequency Circuits650V 155m 22A l Lead-FreeBenefitsDl Ultra Low Gate Charge Qg results in Simple DriveRequirement l Improved Gate, Avalanche and Dy

PD - 94414IRFP22N60KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Hard Switching Primary or PFS Switch600V 240m 22Al Switch Mode Power Supply (SMPS)l Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl Full

July 2009SupreMOS TMFCP22N60N / FCPF22N60NT tmN-Channel MOSFET600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies.

July 2009SupreMOS TMFCA22N60N tmN-Channel MOSFET600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies. By utilizing

June 2010 TMSupreMOSFCH22N60NtmN-Channel MOSFET 600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies. By utilizin

RDD022N60 Nch 600V 2A Power MOSFET DatasheetlOutlineVDSS600V CPT3(SC-63)RDS(on) (Max.)6.7W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

SiHG22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11Available Avalanche energy rated (UIS)Qgd (

SiHA22N60AELwww.vishay.comVishay SiliconixEL Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?999

SiHF22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

SiHA22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 24

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

SiHG22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation oneVDS at TJ max. (V) 650 High EAR capabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower figure-of-merit Ron x QgQg max. (nC) 98 100 % avalanche testedQgs (nC) 17AvailableQgd (nC) 25 Ultra low RonConfiguration Single dV/dt ruggedness U

SiHF22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

SiHP22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

SiHA22N60AEwww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg)Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.co

SiHP22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

SiHB22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 Halogen-free According to IEC 61249-2-21RDS(on) max. at 25 C () VGS = 10 V 0.190DefinitionQg max. (nC) 98 High EAR CapabilityQgs (nC) 17 Lower Figure-of-Merit Ron x QgQgd (nC) 25 100 % Avalanche TestedConfiguration Single

SiHB22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

Polar3TM HiperFETTM VDSS = 600VIXFA22N60P3ID25 = 22APower MOSFETsIXFP22N60P3 RDS(on) 360m IXFQ22N60P3N-Channel Enhancement Mode IXFH22N60P3TO-220AB (IXFP)Avalanche RatedFast Intrinsic RectifierTO-263 AA (IXFA)GD TabSGS TO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C 600 VSVDGR

IXFH 22N60PVDSS = 600 VPolarHVTM HiPerFETIXFV 22N60PID25 = 22 APower MOSFETsIXFV 22N60PS RDS(on) 350 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 60

IXFC 22N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 12 APower MOSFET RDS(on) 360 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25 C to 150 C 600 VE153432VDGR T

IXTQ 22N60P VDSS = 600 VPolarHVTMIXTV 22N60P ID25 = 22 APower MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 V GD(TAB)SVGSM Tranisent 40 VID25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

PTA22N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 300m 22A RDS(ON),typ.=300 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P

iscN-Channel MOSFET Transistor IRFP22N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.28 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc N-Channel MOSFET Transistor SiHB22N60EFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a