All MOSFET. 22N60 Datasheet

 

22N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 22N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 446 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 300 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: TO-3P_TO-247_TO-230

22N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

22N60 Datasheet (PDF)

1.1. sihb22n60e.pdf Size:198K _upd-mosfet

22N60
22N60

SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.18 • Reduced Switching and Conduction Losses Qg max. (nC) 86 • Ultra Low Gate Charge (Qg) Qgs (nC) 14 • Avalanche Energy Rated (UIS) Qgd (nC) 26 •

1.2. sihp22n60s.pdf Size:210K _upd-mosfet

22N60
22N60

SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation One VDS at TJ max. (V) 650 • High EAR Capability RDS(on) max. at 25 °C () VGS = 10 V 0.190 • Lower Figure-of-Merit Ron x Qg Qg max. (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron Configuration Single • dV/dt Ruggedness • Ultra Low G

 1.3. sihg22n60e.pdf Size:182K _upd-mosfet

22N60
22N60

SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Qg max. (nC) 86 • Ultra low gate charge (Qg) Qgs (nC) 11 Available • Avalanche energy rated (UIS) Qgd (

1.4. sihf22n60e.pdf Size:165K _upd-mosfet

22N60
22N60

SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.18 • Reduced Switching and Conduction Losses Qg max. (nC) 86 • Ultra Low Gate Charge (Qg) Qgs (nC) 14 • Avalanche Energy Rated (UIS) Qgd (nC) 26 •

 1.5. siha22n60e.pdf Size:171K _upd-mosfet

22N60
22N60

SiHA22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Qg max. (nC) 86 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 24 •

1.6. sihfp22n60k.pdf Size:177K _upd-mosfet

22N60
22N60

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ()VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co

1.7. sihp22n60e.pdf Size:207K _upd-mosfet

22N60
22N60

SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.18 • Reduced Switching and Conduction Losses Qg max. (nC) 86 • Ultra Low Gate Charge (Qg) Qgs (nC) 14 • Avalanche Energy Rated (UIS) Qgd (nC) 26 •

1.8. irfp22n60c3pbf.pdf Size:219K _upd-mosfet

22N60
22N60

PD - 95005 SMPS MOSFET IRFP22N60C3PbF Superjunction Power MOSFET AppIications l PFC and Primary Switch in SMPS l Uninterruptible Power Supply VDSS@TJ max RDS(on) typ. ID l High Speed Power Switching l Hard Switched and High Frequency Circuits 650V 155m 22A l Lead-Free Benefits D l Ultra Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dy

1.9. irfp22n60k irfp22n60kpbf.pdf Size:177K _upd-mosfet

22N60
22N60

IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ()VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 150 COMPLIANT Ruggedness Qgs (nC) 45 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 76 and Current Co

1.10. sihb22n60s.pdf Size:148K _upd-mosfet

22N60
22N60

SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation One VDS at TJ max. (V) 650 • Halogen-free According to IEC 61249-2-21 RDS(on) max. at 25 °C () VGS = 10 V 0.190 Definition Qg max. (nC) 98 • High EAR Capability Qgs (nC) 17 • Lower Figure-of-Merit Ron x Qg Qgd (nC) 25 • 100 % Avalanche Tested Configuration Single

1.11. sihf22n60s.pdf Size:165K _upd-mosfet

22N60
22N60

SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation One VDS at TJ max. (V) 650 • High EAR Capability RDS(on) max. at 25 °C () VGS = 10 V 0.190 • Lower Figure-of-Merit Ron x Qg Qg max. (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron Configuration Single • dV/dt Ruggedness • Ultra Low G

1.12. sihg22n60s.pdf Size:184K _upd-mosfet

22N60
22N60

SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY • Generation one VDS at TJ max. (V) 650 • High EAR capability RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.190 • Lower figure-of-merit Ron x Qg Qg max. (nC) 98 • 100 % avalanche tested Qgs (nC) 17 Available Qgd (nC) 25 • Ultra low Ron Configuration Single • dV/dt ruggedness • U

1.13. fch22n60n.pdf Size:379K _fairchild_semi

22N60
22N60

June 2010 TM SupreMOS FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this adva

1.14. fcp22n60n fcpf22n60nt.pdf Size:757K _fairchild_semi

22N60
22N60

July 2009 SupreMOS TM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing

1.15. fca22n60n.pdf Size:527K _fairchild_semi

22N60
22N60

July 2009 SupreMOS TM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this advanced

1.16. irf22n60c.pdf Size:358K _international_rectifier

22N60
22N60

RoHS IRF22N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 22A, 600Volts DESCRIPTION The Nell IRF22N60 is a three-terminal silicon device with current conduction capability of 22A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 5 volts. G They are designed for use in applications such as

1.17. irfp22n60k.pdf Size:123K _international_rectifier

22N60
22N60

PD - 94414 IRFP22N60K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Hard Switching Primary or PFS Switch 600V 240m? 22A l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Char

1.18. sihb22n60s.pdf Size:146K _vishay

22N60
22N60

1.19. sihf22n60s.pdf Size:163K _vishay

22N60
22N60

1.20. sihg22n60s.pdf Size:177K _vishay

22N60
22N60

1.21. ixfh22n60p ixfv22n60p.pdf Size:295K _ixys

22N60
22N60

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS ? ? RDS(on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G D (TAB) VGS Continuous 30 V

1.22. ixfc22n60p.pdf Size:231K _ixys

22N60
22N60

IXFC 22N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 12 A Power MOSFET ? ? RDS(on) ? 360 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 600

1.23. ixtq22n60p ixtv22n60p.pdf Size:314K _ixys

22N60
22N60

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET ? ? IXTV 22N60PS RDS (on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 TC = 25 C22 A IDM TC = 25 C,

1.24. ixfa22n60p3.pdf Size:179K _ixys

22N60
22N60

Polar3TM HiperFETTM VDSS = 600V IXFA22N60P3 ID25 = 22A Power MOSFETs IXFP22N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3 TO-220AB (IXFP) Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G D Tab S G S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 600 V S VDGR

1.25. 22n60.pdf Size:238K _utc

22N60
22N60

UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) = 0.35? * Ultra Low Gate Charge ( T

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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