All MOSFET. 1N60 Datasheet

 

1N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 9.3 Ohm

Package: TO-220_TO-92_SOT-223_TO-126_TO-251_TO-252

1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N60 Datasheet (PDF)

1.1. irfu1n60apbf.pdf Size:231K _upd

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1N60

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0Ω 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

1.2. irfu1n60a.pdf Size:269K _upd

1N60
1N60

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (Ω)VGS = 10 V 7.0 • Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 • Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

 1.3. fcb11n60ftm.pdf Size:967K _upd-mosfet

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December 2008 TM SuperFET FCB11N60F 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.32Ω balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 120ns ) lower gate charge performance. •

1.4. irfp21n60l irfp21n60lpbf.pdf Size:194K _upd-mosfet

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IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 External Diodes in ZVS Applications Available RDS(on) ()VGS = 10 V 0.27 • Lower Gate Charge Results in Simple Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 46 • Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd

 1.5. fmv11n60e.pdf Size:493K _upd-mosfet

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1N60

FMV11N60E FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-E3 series Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0

1.6. msu1n60.pdf Size:809K _upd-mosfet

1N60
1N60

600V/1.2A POWER MOSFET (N-Channel) MSU1N60 600V/1.2A Power MOSFET (N-Channel) General Description  MSU1N60 is a N-Channel enhancement mode power MOSFET SOT-223 TO-92 with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche an

1.7. fmc11n60e.pdf Size:567K _upd-mosfet

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FMC11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.8. fci11n60.pdf Size:899K _upd-mosfet

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December 2008 TM SuperFET FCI11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.32Ω balance mechanism for outstanding low on-resistance and • Ultra Low Gate Charge (typ. Qg = 40nC) lower gate charge performance.

1.9. fch041n60f f085.pdf Size:617K _upd-mosfet

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April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 mΩ D Features Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra

1.10. sihh11n60e.pdf Size:152K _upd-mosfet

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SiHH11N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Fully lead (Pb)-free device VDS (V) at TJ max. 650 • Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. (Ω) at 25 °C VGS = 10 V 0.295 • Low input capacitance (Ciss) Qg max. (nC) 62 • Reduced switching and conduction losses Qgs (nC) 7 Qgd (nC) 13 • Ultra low gate charge (Qg) Confi

1.11. sihfp21n60l.pdf Size:194K _upd-mosfet

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IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 External Diodes in ZVS Applications Available RDS(on) ()VGS = 10 V 0.27 • Lower Gate Charge Results in Simple Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 46 • Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd

1.12. fmp11n60e.pdf Size:562K _upd-mosfet

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FMP11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.13. sihh21n60e.pdf Size:150K _upd-mosfet

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SiHH21N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Fully lead (Pb)-free device VDS (V) at TJ max. 650 • Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. (Ω) at 25 °C VGS = 10 V 0.153 • Low input capacitance (Ciss) Qg max. (nC) 83 • Reduced switching and conduction losses Qgs (nC) 11 Qgd (nC) 20 • Ultra low gate charge (Qg) Conf

1.14. fmi11n60e.pdf Size:570K _upd-mosfet

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FMI11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.15. sihfr1n60a sihfu1n60a.pdf Size:269K _upd-mosfet

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (Ω)VGS = 10 V 7.0 • Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 • Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

1.16. hy1n60d.pdf Size:179K _upd-mosfet

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HY1N60D / HY1N60M 600V / 1.0A 600V, RDS(ON)=12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger 2 1 1 D G 2 • In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mechanical In

1.17. ssr1n60b ssr1n60btm ssu1n60b.pdf Size:678K _upd-mosfet

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November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.9A, 600V, RDS(on) = 12Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar, DMOS technology. • Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to

1.18. irfr1n60apbf.pdf Size:231K _upd-mosfet

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PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0Ω 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

1.19. fcb11n60tm.pdf Size:971K _upd-mosfet

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July 2005 TM SuperFET FCB11N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.32Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. • Low

1.20. tsm1n60sct.pdf Size:366K _update_mosfet

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 TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

1.21. hfd1n60s.pdf Size:195K _update_mosfet

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Sep 2009 BVDSS = 600 V RDS(on) typ HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N60S HFU1N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

1.22. hft1n60s.pdf Size:302K _update_mosfet

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Dec 2009 BVDSS = 600 V RDS(on) typ HFT1N60S ID = 0.2 A 600V N-Channel MOSFET SOT-223 2 FEATURES 3 Originative New Design 1 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lowe

1.23. cs1n60a1h.pdf Size:537K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS1N60 A1H General Description: VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.24. wfd1n60.pdf Size:576K _update_mosfet

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WFD1N60 WFD1N60 WFD1N60 WFD1N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 1.3A,600V,R (Max 8.5Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 9.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced u

1.25. cmt01n60.pdf Size:181K _update_mosfet

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CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w

1.26. cs1n60a3h.pdf Size:532K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS1N60 A3H General Description: VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.27. hfb1n60s.pdf Size:238K _update_mosfet

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Sep 2009 BVDSS = 600 V RDS(on) typ HFB1N60S ID = 0.3 A 600V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

1.28. tsm1n60lch tsm1n60lcp.pdf Size:303K _update_mosfet

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 TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)(Ω) ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

1.29. mtd1n60e.pdf Size:266K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD1N60E/D Designer's? Data Sheet MTD1N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 1.0 AMPERE 600 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 8.0 OHM scheme to provide enhanced voltageblocki

1.30. mgp21n60e.pdf Size:127K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP21N60E/D Designer's? Data Sheet MGP21N60E Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 21 A @ 90C voltageblocking capability. Its new 600 V IGBT technology

1.31. mgp11n60erev0.pdf Size:123K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60E/D Designer's? Data Sheet MGP11N60E Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 11 A @ 90C voltageblocking capability. Its new 600 V IGBT technology

1.32. mgp11n60ed.pdf Size:150K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60ED/D Designer's? Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO220 11 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 15 A @ 25C with a soft recovery ultrafast rectifier and uses an advanced 600 VOLT

1.33. mtp1n60erev1x.pdf Size:232K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N60E/D Designer's? Data Sheet MTP1N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performa

1.34. mtp1n60e.pdf Size:199K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N60E/D Designer's? Data Sheet MTP1N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performa

1.35. mgp21n60erev0.pdf Size:127K _motorola

1N60
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP21N60E/D Designer's? Data Sheet MGP21N60E Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 21 A @ 90C voltageblocking capability. Its new 600 V IGBT technology

1.36. mgp11n60de.pdf Size:107K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP11N60DE/D Product Preview Data Sheet MGP11N60DE Insulated Gate Bipolar Transistor with Anti-Parallel Diode IGBT & DIODE IN TO220 NChannel Enhancement Mode Silicon Gate 11 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 15 A @ 25C with a soft recovery ultrafast rectifier and uses an advanced 600 VO

1.37. mgw21n60ed.pdf Size:157K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW21N60ED/D Designer's? Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is copackaged IGBT IN TO247 with a soft recovery ultrafast rectifier and uses an advanced 21 A @ 90C termination scheme to provide an enhanced and reliable

1.38. mgw21n60edrev0.pdf Size:152K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW21N60ED/D Preliminary Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is copackaged IGBT IN TO247 with a soft recovery ultrafast rectifier and uses an advanced 21 A @ 90C termination scheme to provide an enhanced and reliable

1.39. phx1n60e 1.pdf Size:24K _philips2

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Philips Semiconductors Objective Specification PowerMOS transistor PHX1N60E Isolated version of PHP1N60E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 1.3 A blocking voltage

1.40. php1n60e 1.pdf Size:20K _philips2

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Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 1.9 A blocking voltage, fast switching and Ptot Total power diss

1.41. php1n60 1.pdf Size:57K _philips2

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Philips Semiconductors Product specification PowerMOS transistor PHP1N60 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 1.9 A off-state characteristics, fast Ptot Total power dissipation

1.42. pht1n60r 4.pdf Size:77K _philips2

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Philips Semiconductors Product specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 600 V mounting featuring high avalanche ID Drain current (DC) 0.46 A energy capability, stable blocking Ptot Total power dis

1.43. pht1n60p.pdf Size:26K _philips2

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Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 600 V mounting featuring high avalanche ID Drain current (DC) 0.53 A energy capability, stable blocking Ptot Total power d

1.44. tk31n60w.pdf Size:256K _toshiba2

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TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31N60W TK31N60W TK31N60W TK31N60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) E

1.45. tk31n60x.pdf Size:249K _toshiba2

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TK31N60X MOSFETs Silicon N-Channel MOS (DTMOS-H) TK31N60X TK31N60X TK31N60X TK31N60X 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties wit

1.46. tk31n60w5.pdf Size:244K _toshiba2

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TK31N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK31N60W5 TK31N60W5 TK31N60W5 TK31N60W5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction St

1.47. fch041n60e.pdf Size:559K _fairchild_semi

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December 2013 FCH041N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 285 nC

1.48. fqb1n60tm.pdf Size:544K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQB1N60 / FQI1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.2A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology

1.49. fcpf11n60t.pdf Size:1820K _fairchild_semi

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March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET® MOSFET is Fairchild Semiconductor’s first • 650V @Tj = 150°C genera-tion of high voltage super-junction (SJ) MOSFET • Typ. Rds(on)=0.32Ω family that is utilizing charge balance technology for • Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge • Low effective outpu

1.50. fcpf11n60f.pdf Size:373K _fairchild_semi

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November 2013 FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ Features Description • 600 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 320 mΩ utilizing charge balance technology for outstanding low on- • Fast Recovery Type (trr = 120 ns) resistanc

1.51. fqp1n60.pdf Size:520K _fairchild_semi

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QFET N-CHANNEL FQP1N60 FEATURES BVDSS = 600V • Advanced New Design RDS(ON) = 11.5Ω • Avalanche Rugged Technology ID = 1.2A • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics TO-220 • Unrivalled Gate Charge: 5.0nC (Typ.) • Extended Safe Operating Area 1 • Lower RDS(ON): 9.3Ω (Typ.) 2 3 1. Gate 2. Drain 3. Sou

1.52. fcp11n60n fcpf11n60nt.pdf Size:2711K _fairchild_semi

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August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299? Features Description RDS(on) = 0.255? ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi based tec

1.53. fcp11n60 fcpf11n60.pdf Size:621K _fairchild_semi

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December 2008 TM SuperFET FCP11N60/FCPF11N60 General Description Features SuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150C from Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32? gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. Low effective o

1.54. fcpf11n60.pdf Size:1820K _fairchild_semi

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March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET® MOSFET is Fairchild Semiconductor’s first • 650V @Tj = 150°C genera-tion of high voltage super-junction (SJ) MOSFET • Typ. Rds(on)=0.32Ω family that is utilizing charge balance technology for • Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge • Low effective outpu

1.55. fqd1n60tf fqd1n60tm.pdf Size:541K _fairchild_semi

1N60
1N60

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology

1.56. fqu1n60tu.pdf Size:541K _fairchild_semi

1N60
1N60

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology

1.57. fqd1n60c fqu1n60c.pdf Size:752K _fairchild_semi

1N60
1N60

January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especially tailored to

1.58. fqn1n60c.pdf Size:683K _fairchild_semi

1N60
1N60

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimize on-state re

1.59. fqn1n60cbu fqn1n60cta.pdf Size:682K _fairchild_semi

1N60
1N60

® QFET FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 3.5 pF) minimi

1.60. fqpf1n60 fqpf1n60t.pdf Size:540K _fairchild_semi

1N60
1N60

April 2000 TM QFET QFET QFET QFET FQPF1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.9A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been

1.61. fqt1n60c.pdf Size:816K _fairchild_semi

1N60
1N60

November 2007 QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5? Features Description RDS(on) = 9.3? (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF) This advanced technology has been especially tailored to

1.62. fqu1n60ctu.pdf Size:752K _fairchild_semi

1N60
1N60

January 2009 QFET® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. • Low Crss ( typical 3.5 pF) This advanced technology has been especiall

1.63. fqd1n60 fqu1n60.pdf Size:543K _fairchild_semi

1N60
1N60

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been esp

1.64. fcp11n60f fcpf11n60f.pdf Size:620K _fairchild_semi

1N60
1N60

December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance. Ultra Lo

1.65. fqd1n60ctf fqd1n60ctm.pdf Size:752K _fairchild_semi

1N60
1N60

January 2009 QFET® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. • Low Crss ( typical 3.5 pF) This advanced technology has been especiall

1.66. fcp11n60.pdf Size:1820K _fairchild_semi

1N60
1N60

March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET® MOSFET is Fairchild Semiconductor’s first • 650V @Tj = 150°C genera-tion of high voltage super-junction (SJ) MOSFET • Typ. Rds(on)=0.32Ω family that is utilizing charge balance technology for • Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge • Low effective outpu

1.67. fqt1n60ctf ws.pdf Size:816K _fairchild_semi

1N60
1N60

November 2007 ® QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS(on) = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. • Low Crss ( Typ. 3.5pF) This advanced technology has been especia

1.68. fch041n60f.pdf Size:594K _fairchild_semi

1N60
1N60

December 2013 FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn

1.69. fcb11n60.pdf Size:924K _fairchild_semi

1N60
1N60

December 2008 TM SuperFET FCB11N60 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low effective

1.70. irfr1n60a.pdf Size:181K _international_rectifier

1N60
1N60

PD - 91846B SMPS MOSFET IRFR1N60A IRFU1N60A Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage a

1.71. irfp21n60l.pdf Size:163K _international_rectifier

1N60
1N60

PD - 94503 SMPS MOSFET IRFP21N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 270m? 160ns 21A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in si

1.72. irfr1n60apbf irfu1n60apbf.pdf Size:257K _international_rectifier

1N60
1N60

PD - 95518A SMPS MOSFET IRFR1N60APbF IRFU1N60APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) VDSS Rds(on) max ID l Uninterruptable Power Supply l Power Factor Correction 600V 7.0? 1.4A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

1.73. irfp21n60lpbf.pdf Size:251K _international_rectifier

1N60
1N60

PD - 95478 SMPS MOSFET IRFP21N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 270m? 160ns 21A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate char

1.74. ssr1n60a.pdf Size:502K _samsung

1N60
1N60

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.75. ssp1n60a.pdf Size:931K _samsung

1N60
1N60

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VD

1.76. ssw1n60a.pdf Size:503K _samsung

1N60
1N60

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Low RDS(ON) : 9.390 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

1.77. irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf Size:244K _vishay

1N60
1N60

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) (?)VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Single Full

1.78. spb11n60c3 rev26.pdf Size:469K _infineon

1N60
1N60

SPB11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 Maximum Ratings Parameter Symbol Val

1.79. spp11n60cfd rev.2.7.pdf Size:641K _infineon

1N60
1N60

SPP11N60CFD C??I MOS P?wer Transist?r VDS @ Tjmax 650 V Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Package Ordering C?de Marking SPP11N60CFD PG-TO220 Q67040-S461

1.80. spw11n60s5 rev[1].2.4 pcn.pdf Size:918K _infineon

1N60
1N60

SPW11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 Maximum Ratings Parameter Symbol Value

1.81. spa11n60cfd rev1.4.pdf Size:555K _infineon

1N60
1N60

SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.44 DS(on),max Intrinsic fast-recovery body diode 1) 11 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified for industrial grade a

1.82. sps01n60c3 rev.2.1.pdf Size:686K _infineon

1N60
1N60

SPS01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 6 ? New revolutionary high voltage technology ID 0.8 A Ultra low gate charge PG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPS01N60C3 PG-TO251-3-11 - 01N60C3 Maximum Ratings Parameter Symbol Va

1.83. spw11n60c3 rev[1].2.6 pcn.pdf Size:790K _infineon

1N60
1N60

VDS Tjmax ? G G

1.84. spp11n60s5 spi11n60s5.pdf Size:1105K _infineon

1N60
1N60

SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 11N60S5 SPP11N60S5 PG-TO220 Q67040-

1.85. spp11n60s5 spi11n60s5 rev.2.7.pdf Size:472K _infineon

1N60
1N60

SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 11N60S5 SPP11N60S5 PG-TO220 Q67040-

1.86. spw11n60cfd rev[1].2.5 pcn.pdf Size:1394K _infineon

1N60
1N60

SPW11N60CFD C??I MOS P?wer TransIst?r VDS @ Tjmax 650 V DS Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A 11 Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated /d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade applications accordin

1.87. spi11n60cfd rev.2.6.pdf Size:937K _infineon

1N60
1N60

SPI11N60CFD C??I MOS P?wer Transist?r VDS @ Tjmax 650 V Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade applications according to JEDEC

1.88. spb11n60s5 rev.2.3.pdf Size:686K _infineon

1N60
1N60

SPB11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking 11N60S5 SPB11N60S5 PG-TO263 Q67040-S4199 Maximum Ratings Parameter Symbol Value

1.89. spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf Size:654K _infineon

1N60
1N60

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111: Fully

1.90. om11n60sa.pdf Size:30K _omnirel

1N60
1N60

OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOS

1.91. 1n60p.pdf Size:269K _utc

1N60
1N60

UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of pow

1.92. 1n60.pdf Size:328K _utc

1N60
1N60

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power

1.93. 1n60a.pdf Size:218K _utc

1N60
1N60

UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

1.94. 1n60z.pdf Size:244K _utc

1N60
1N60

UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supp

1.95. sjv01n60.pdf Size:73K _secos

1N60
1N60

SJV01N60 1A , 600V , RDS(ON) 10 m? ? ? ? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced A D termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, B this a

1.96. tsm1n60l a07.pdf Size:403K _taiwansemi

1N60
1N60

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)(?) ID (A) Pin Definition: 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

1.97. tsm1n60s a07.pdf Size:368K _taiwansemi

1N60
1N60

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(?) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high

1.98. kf1n60d-i.pdf Size:917K _kec

1N60
1N60

KF1N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF1N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 power supplies.

1.99. kf1n60l.pdf Size:876K _kec

1N60
1N60

KF1N60L SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description B D DIM MILLIMETERS This planar stripe MOSFET has better characteristics, such as fast A 7.20 MAX switching time, low on resistance, low gate charge and excellent B 5.20 MAX C 0.60 MAX avalanche characteristics. It is mainly suitable for switching mode P D 2.50 MAX DEPTH:0.2 E 1.15 MAX

1.100. ixgh41n60.pdf Size:33K _igbt

1N60
1N60

Ultra-Low VCE(sat) IGBT IXGH 41N60 VCES = 600 V IC25 = 76 A VCE(sat) = 1.6 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C76 A IC90 TC = 90°C41 A ICM TC = 25°C, 1 ms 152 A G = Gate, C = Collector, E = Emitter, TAB = Collector SSOA VG

1.101. ixgh31n60.pdf Size:54K _igbt

1N60
1N60

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 V IXGT 31N60 IC25 = 60 A VCE(sat) = 1.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-268 IC90 TC = 90°C31 A ICM TC = 25°C, 1 ms 80 A G SSOA VGE= 15 V, TVJ = 125°C, RG = 1

1.102. ixgh31n60d1.pdf Size:52K _igbt

1N60
1N60

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 V IGBT with Diode IXGT 31N60D1 IC25 = 60 A VCE(sat) = 1.7 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C60 A (IXGH) IC90 TC = 90°C31 A ICM TC = 25°C, 1

1.103. ixgt31n60.pdf Size:54K _igbt_a

1N60
1N60

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 V IXGT 31N60 IC25 = 60 A VCE(sat) = 1.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-268 IC90 TC = 90°C31 A ICM TC = 25°C, 1 ms 80 A G SSOA VGE= 15 V, TVJ = 125°C, RG = 1

1.104. ixgt31n60d1.pdf Size:52K _igbt_a

1N60
1N60

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 V IGBT with Diode IXGT 31N60D1 IC25 = 60 A VCE(sat) = 1.7 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C60 A (IXGH) IC90 TC = 90°C31 A ICM TC = 25°C, 1

1.105. h01n60s.pdf Size:162K _hsmc

1N60
1N60

Spec. No. : MOS200501 HI-SINCERITY Issued Date : 2005.01.01 Revised Date : 2010.11.10 MICROELECTRONICS CORP. Page No. : 1/6 H01N60S Series Pin Assignment H01N60S Series 3-Lead Plastic TO-92 N-Channel Power Field Effect Transistor Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source Description 3 1 2 This high voltage MOSFET uses an advanced termination scheme to

1.106. h01n60.pdf Size:58K _hsmc

1N60
1N60

Spec. No. : MOS200502 HI-SINCERITY Issued Date : 2005.03.01 Revised Date : 2006.08.31 MICROELECTRONICS CORP. Page No. : 1/5 H01N60 Series Pin Assignment H01N60 Series N-Channel Power Field Effect Transistor Tab 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate 3 Pin 2 & Tab: Drain 2 Description 1 Pin 3: Source This high voltage MOSFET uses an advanced termination scheme to provi

1.107. aoi1n60.pdf Size:344K _aosemi

1N60
1N60

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 9Ω applications. By providing low RDS(on), Ciss

1.108. aot11n60.pdf Size:545K _aosemi

1N60
1N60

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150℃ using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.65Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon

1.109. aow11n60.pdf Size:447K _aosemi

1N60
1N60

AOW11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOW11N60 has been fabricated using an advanced 700V@150℃ high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 0.7Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avala

1.110. aod1n60.pdf Size:344K _aosemi

1N60
1N60

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 9Ω applications. By providing low RDS(on), Ciss

1.111. aotf11n60.pdf Size:545K _aosemi

1N60
1N60

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150℃ using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.65Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon

1.112. aob11n60.pdf Size:444K _aosemi

1N60
1N60

AOB11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOB11N60 has been fabricated using an advanced 700V@150℃ high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 0.7Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avala

1.113. aowf11n60.pdf Size:447K _aosemi

1N60
1N60

AOWF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOWF11N60 has been fabricated using an 700V@150℃ advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.65Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed ava

1.114. aot1n60.pdf Size:131K _aosemi

1N60
1N60

AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 1.3A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 9Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avala

1.115. aoi1n60l.pdf Size:344K _aosemi

1N60
1N60

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 9Ω applications. By providing low RDS(on), Ciss

1.116. aou1n60.pdf Size:344K _aosemi

1N60
1N60

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150℃ process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 9Ω applications. By providing low RDS(on), Ciss

1.117. ap01n60j.pdf Size:196K _a-power

1N60
1N60

AP01N60J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Fast Switching Characteristics RDS(ON) 8Ω ▼ Simple Drive Requirement ID 1.6A G ▼ RoHS Compliant & Halogen-Free S Description G D S TO-251(J) AP01N60 series are from Advanced Power innovated design and silicon process technology

1.118. ap01n60hj-hf.pdf Size:98K _a-power

1N60
1N60

AP01N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching Characteristics RDS(ON) 8? Ў Simple Drive Requirement ID 1.6A G Ў RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applicatio

1.119. ap01n60p.pdf Size:60K _a-power

1N60
1N60

AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Dynamic dv/dt Rating BVDSS 600V Ў Repetitive Avalanche Rated RDS(ON) 8? Ў Fast Switching ID 1.6A Ў Simple Drive Requirement G D TO-220 S Ў RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The device is s

1.120. sif1n60c.pdf Size:404K _sisemi

1N60
1N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF1N60C N- MOS / N-CHANNEL POWER MOSFET SIF1N60C N- MOS / N-CHANN

1.121. mtn1n60a3.pdf Size:310K _cystek

1N60
1N60

Spec. No. : C721A3 Issued Date : 2010.10.18 CYStech Electronics Corp. Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 8Ω (typ.) MTN1N60A3 ID : 1A Description The MTN1N60A3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

1.122. sdf21n60.pdf Size:153K _solitron

1N60



1.123. cs1n60 to-252.pdf Size:241K _can-sheng

1N60
1N60

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

1.124. cs1n60 to-92.pdf Size:245K _can-sheng

1N60
1N60

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors 1N60 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits MAXIMU

1.125. fsn01n60a.pdf Size:249K _inpower_semi

1N60
1N60

FSN01N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Typ.) ID • Adaptor • TV Main Power 600 V 7.0 Ω 1.5 A • SMPS Power Supply • LCD Panel Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • ESD improved Capability G DS TO-92 Ordering Information PART NUMBER PACKAGE BRAND Packages FSN01N60A TO-92 01N60A

1.126. ftu01n60c.pdf Size:288K _inpower_semi

1N60
1N60

FTU01N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID •Adaptor •Charger 600V 8.0 Ω 1.1A •SMPS Features: • RoHS Compliant D • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves G G D S Ordering Information PART NUMBER PACKAGE BRAND S TO-251 Not to Scale FTU01N

1.127. brf1n60.pdf Size:929K _blue-rocket-elect

1N60
1N60

BRF1N60(BRCS1N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

1.128. bri1n60.pdf Size:782K _blue-rocket-elect

1N60
1N60

BRI1N60(BRCS1N60I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high ef

1.129. br1n60.pdf Size:1000K _blue-rocket-elect

1N60
1N60

BR1N60(BRCS1N60R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.130. brd1n60.pdf Size:1109K _blue-rocket-elect

1N60
1N60

BRD1N60(BRCS1N60D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.131. brs1n60.pdf Size:243K _blue-rocket-elect

1N60
1N60

BRS1N60(CS1N60S) N-CHANNEL MOSFET/N 沟道 MOS 场效应管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25

1.132. l1n60.pdf Size:415K _lrc

1N60
1N60

LESHAN RADIO COMPANY, LTD. Power MOSFET L1N60 1.2 Amps, 600 Volts N–Channel The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1 TO- 251 characteristics. This power MOSFET is usually used at high speed switching applications in power suppli

1.133. hfu1n60.pdf Size:209K _shantou-huashan

1N60
1N60

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU1N60 █ APPLICATIONSL TO-251 high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

1.134. hfr1n60.pdf Size:229K _shantou-huashan

1N60
1N60

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFR1N60 █ APPLICATIONSL TO-92 high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 1―G 2―D PD —— Allowable Power Dissipation(Tc=25℃)⋯

1.135. hff11n60s.pdf Size:711K _shantou-huashan

1N60
1N60

HFF11N60S Shantou Huashan Electronic Devices Co., Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performa

1.136. cs1n60 b1r.pdf Size:1006K _crhj

1N60
1N60

Silicon N-Channel Power MOSFET R ○ CS1N60 B1R General Description: VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.137. cs1n60 a1h.pdf Size:537K _crhj

1N60
1N60

Silicon N-Channel Power MOSFET R ○ CS1N60 A1H General Description: VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.138. cs1n60 b3r.pdf Size:991K _crhj

1N60
1N60

Silicon N-Channel Power MOSFET R ○ CS1N60 B3R General Description: VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.139. cs1n60 a3h.pdf Size:532K _crhj

1N60
1N60

Silicon N-Channel Power MOSFET R ○ CS1N60 A3H General Description: VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.140. cs1n60 c3h.pdf Size:530K _crhj

1N60
1N60

Silicon N-Channel Power MOSFET R ○ CS1N60 C3H General Description: VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.141. cs1n60 c1h.pdf Size:483K _crhj

1N60
1N60

Silicon N-Channel Power MOSFET R ○ CS1N60 C1H General Description: VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.142. cm1n60s.pdf Size:141K _jdsemi

1N60
1N60

R CM1N60S 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.143. cm1n60c.pdf Size:123K _jdsemi

1N60
1N60

R C16C MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于充电器等各类开关电路 2 .主要特点 开关速度快 通态电阻小,输入电容小 3 .封装外形 TO-251 4 .电特

1.144. cm1n60.pdf Size:120K _jdsemi

1N60
1N60

R C16 MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于充电器等各类开关电路 2 .主要特点 开关速度快 通态电阻小,输入电容小 3 .封装外形 TO-92 4 .电特

1.145. ftk1n60p f d i.pdf Size:288K _first_silicon

1N60
1N60

SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I : N-CHANNEL MOSFET 1 TO - 251 D : 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P : charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

1.146. ftk1n60t-l.pdf Size:220K _first_silicon

1N60
1N60

SEMICONDUCTOR FTK1N60T/L TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60T/L is a high voltage MOSFET and is designed to 1 have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche T : TO-92 characteristics. This power MOSFET is usually used at high speed switching app

1.147. kx1n60ds.pdf Size:1833K _kexin

1N60
1N60

SMD Type MOSFET N-Channel Power MOSFET KX1N60DS SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● ESD improved capability 1 2 ● Depletion mode +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● dv/dt rated +0.1 1.9 -0.2 ● Pb-free lead plating;ROHS compliant ● Halogen Free 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Ra

1.148. ki1n60.pdf Size:233K _kexin

1N60
1N60

SMD Type MOSFET Transistors N-Channel Power MOSFET KI1N60 Features 1.70 0.1 VDS (V) = 600V ID = 1 A RDS(ON) 10.5 (VGS = 10V) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 TC=25 1 Continuous Drain Current ID A TC=100 0.7 Pulsed Drain Current

1.149. ki1n60ds.pdf Size:1067K _kexin

1N60
1N60

SMD Type MOSFET N-Channel MOSFET KI1N60DS SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 600V ● ID = 0.4 A (VGS = 10V) ● RDS(ON) < 30 Ω (VGS = 10V) D 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 G 1. Gate 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 600

1.150. nft1n60.pdf Size:1525K _kexin

1N60
1N60

SMD Type MOSFET N-Channel MOSFET NFT1N60 Unit:mm SOT-223 6.50±0.2 3.00±0.1 4 ■ Features ● VDS (V) = 600V ● ID = 0.4 A (VGS = 10V) 1 2 3 ● RDS(ON) < 7.9Ω (VGS = 10V) ● High switching speed 0.250 2.30 (typ) 0.84 (max) Gauge Plane ● Improved dv/dt capability 0.66 (min) 1.Gate 2.Drain 3.Source 4.60 (typ) 4.Drain ■ Absolute Maximum Ratings Ta = 25

1.151. sss1n60.pdf Size:4013K _shenzhen-tuofeng-semi

1N60
1N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS1N60 SSS1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 8.5Ω @VGS = 10 V transistors are produced using proprietary, • Low gate charge ( typical 5.9 nC) planar, DMOS technology. • Low Crss ( typical 3.6 pF) This advanced technology has been

1.152. mdf11n60th.pdf Size:956K _magnachip

1N60
1N60

 MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description Features The MDF11N60 uses advanced MagnaChip’s MOSFET  V = 600V DS Technology, which provides low on-state resistance, high  V = 660V @ T DS jmax switching performance and excellent quality.  I = 11A @ V = 10V D GS  R ≤ 0.55Ω @ V = 10V DS(ON) GS MDF11N60 is suitable device for SMPS, high Spee

1.153. mdp11n60th.pdf Size:786K _magnachip

1N60
1N60

 MDP11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description Features The MDP11N60 uses advanced MagnaChip’s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V DS switching performance and excellent quality. I = 11A @ V = 10V D GS RDS(ON) ≤ 0.55Ω @ VGS = 10V MDP11N60 is suitable device for SMPS, high Speed switching Applications

1.154. mdz1n60umh.pdf Size:969K _magnachip

1N60
1N60

 MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s  V = 600V DS MOSFET technology, which provides low on-state  I = 0.4A @V = 10V D GS resistance, high switching performance and  RDS(ON) ≤ 8.5Ω @VGS = 10V excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and g

1.155. mdi1n60sth.pdf Size:766K _magnachip

1N60
1N60

 MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5Ω General Description Features The MDI1N60S uses advanced MagnaChip’s V = 600V DS MOSFET technology, which provides low on-state ID = 1.0A @VGS = 10V resistance, high switching performance and R ≤ 8.5Ω @V = 10V DS(ON) GS excellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general

1.156. wfu1n60n.pdf Size:582K _winsemi

1N60
1N60

WFU1N60N Silicon N-Channel MOSFET Features ■1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th is Pow er MO S FET is pro du c ed usi ng Win se m i ’s ad va n ced planar stripe, VDMOS technology. This latest technology has

1.157. wfu1n60.pdf Size:511K _winsemi

1N60
1N60

WFU1N60 WFU1N60 WFU1N60 WFU1N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 1.3A,600V,R (Max 8.5Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced u

1.158. wfn1n60n.pdf Size:668K _winsemi

1N60
1N60

WFN1N60N WFN1N60N WFN1N60N WFN1N60N Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usin

1.159. wfn1n60.pdf Size:396K _winsemi

1N60
1N60

WFN1N60 WFN1N60 WFN1N60 WFN1N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 1.3A,600V, R (Max8.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is produced

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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