UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

RUMWUMW 1N60UMW 1N60UMW 1N60N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETTC=25CTC=25CTC=25CTC=25CAbsolute Maximum RatingsTc=25CAbsolute Maximum RatingsTc=25CAbsolute Maximum RatingsTc=25CTO-92/251T/251S/252/2

SPU01N60C3Rev. 2.0SPD01N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 6 New revolutionary high voltage technologyID 0.8 A Ultra low gate chargeP-TO252 P-TO251-3-1 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPU01N60C3 P-TO251-3-1 Q6

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD1N60E/DDesigner's Data SheetMTD1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 1.0 AMPERE600 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 8.0 OHMscheme to provide enhanced vol

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DPreliminary Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanced

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60DE/DProduct Preview Data SheetMGP11N60DEInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeIGBT & DIODE IN TO220NChannel Enhancement Mode Silicon Gate11 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged 15 A @ 25Cwith a soft recovery ultrafast rectifier and uses an ad

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW21N60ED/DDesigner's Data SheetMGW21N60EDInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is copackagedIGBT IN TO247with a soft recovery ultrafast rectifier and uses an advanced21 A @ 90Ctermination scheme to provide an enhanc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60E/DDesigner's Data SheetMGP11N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high11 A @ 90Cvoltageblocking capability. Its new 600 V I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP21N60E/DDesigner's Data SheetMGP21N60EInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high21 A @ 90Cvoltageblocking capability. Its new 600 V I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP11N60ED/DDesigner's Data SheetMGP11N60EDInsulated Gate Bipolar Transistorwith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO22011 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged15 A @ 25Cwith a soft recovery ultrafast rectifier and uses an a

PD - 91846BSMPS MOSFETIRFR1N60AIRFU1N60AApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4ABenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Vol

PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance

PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance

PD - 95478SMPS MOSFETIRFP21N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 270m 160ns 21A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

PD - 94503SMPS MOSFETIRFP21N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 270m 160ns 21A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate ch

Philips Semiconductors Product specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 600 Vmounting featuring high avalanche ID Drain current (DC) 0.46 Aenergy capability, stable blocking Ptot Total power

Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 1.9 Ablocking voltage, fast switching and Ptot Total power d

Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 600 Vmounting featuring high avalanche ID Drain current (DC) 0.53 Aenergy capability, stable blocking Ptot Total powe

Philips Semiconductors Product specification PowerMOS transistor PHP1N60 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 1.9 Aoff-state characteristics, fast Ptot Total power dissipati

Philips Semiconductors Objective Specification PowerMOS transistor PHX1N60E Isolated version of PHP1N60EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 1.3 Ablocking volt

STF11N60M2-EPDatasheetN-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. IDOrder codeSTF11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge Excellent output capacitance (COSS) profile321 Very low turn-off switching losses 100% avalanche testedTO-220FP Zener-protectedD(2)Applica

TK31N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31N60XTK31N60XTK31N60XTK31N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

TK31N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31N60W5TK31N60W5TK31N60W5TK31N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.) by used to Super Junction St

TK31N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31N60WTK31N60WTK31N60WTK31N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

July 2005TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low

QFET N-CHANNEL FQP1N60FEATURESBVDSS = 600V Advanced New DesignRDS(ON) = 11.5 Avalanche Rugged TechnologyID = 1.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching CharacteristicsTO-220 Unrivalled Gate Charge: 5.0nC (Typ.) Extended Safe Operating Area1 Lower RDS(ON): 9.3 (Typ.) 231. Gate 2. Drain 3. Sou

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi

April 2015FCH041N60F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 AG Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche TestedG Qualified to AEC Q101DTO-247SS RoHS CompliantDescription Forcurrentpackagedra

December 2008 TMSuperFETFCB11N60F 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns ) lower gate charge performance.

March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu

December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

November 2007 QFETFQT1N60CN-Channel MOSFET600V, 0.2A, 11.5Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF)This advanced technology has been especia

December 2013FCH041N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 77 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 285 nC

QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi

April 2000TMQFETQFETQFETQFETFQB1N60 / FQI1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.2A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

November 2013FCPF11N60FN-Channel SuperFET FRFET MOSFET600 V, 11 A, 380 mFeatures Description 600 V @ TJ = 150C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 320 mutilizing charge balance technology for outstanding low on- Fast Recovery Type (trr = 120 ns)resistanc

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

December 2013FCH041N60FN-Channel SuperFET II FRFET MOSFET600 V, 76 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techn

April 2000TMQFETQFETQFETQFETFQPF1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been

December 2008 TMSuperFETFCI11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 40nC) lower gate charge performance.

December 2008 TMSuperFETFCP11N60/FCPF11N60General Description FeaturesSuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150Cfrom Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC)utilizing advanced charge balance mechanisms. L

January 2009QFETFQD1N60C / FQU1N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC)planar stripe, DMOS technology. Low Crss ( typical 3.5 pF)This advanced technology has been especiall

December 2008 TMSuperFETFCB11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance.

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Low RDS(ON) : 9.390 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value U

IRFP21N60L, SiHFP21N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.27 Lower Gate Charge Results in Simple Drive RoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 46 Enhanced dV/dt Capabilities Offer Improved RuggednessQgd

SiHA21N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESDThin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x QgG Low input capacitance (Ciss)Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing

SiHH21N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.153 Low input capacitance (Ciss)Qg max. (nC) 83 Reduced switching and conduction lossesQgs (nC) 11Qgd (nC) 20 Ultra low gate charge (Qg)Conf

SiHH11N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.295 Low input capacitance (Ciss)Qg max. (nC) 62 Reduced switching and conduction lossesQgs (nC) 7Qgd (nC) 13 Ultra low gate charge (Qg)Confi

SPW11N60CFDCI MOS Pwer TransIstrVDS @ Tjmax 650 VDSFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A11 Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated/d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade

SPP11N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Package Ordering Cde MarkingSPP11N60CF

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

VDS Tjmax G G

SPI11N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade applications

SPS01N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 6 New revolutionary high voltage technologyID 0.8 A Ultra low gate chargePG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPS01N60C3 PG-TO251-3-11 - 01N60C3Maximum Ratings

SPB11N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPB11N60C3 PG-TO263 Q67040-S4396 11N60C3Maximum RatingsP

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

SPW11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW11N60S5 PG-TO247 Q67040-S4239 11N60S5Maximum RatingsPara

SPA11N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV 600 VDS New revolutionary high voltage technologyR 0.44 DS(on),max Intrinsic fast-recovery body diode1)11 AID Extremely low reverse recovery charge Ultra low gate chargePG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified for

SPB11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code Marking11N60S5SPB11N60S5 PG-TO263 Q67040-S4199Maximum RatingsPar

SPP11N60S5SPI11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking11N60S5SPP11N60

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 VIGBT with Diode IXGT 31N60D1 IC25 = 60 AVCE(sat) = 1.7 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V GEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C60 A(IXGH)IC90 TC = 90C31 AICM TC = 25C, 1

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 VIXGT 31N60 IC25 = 60 AVCE(sat) = 1.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 V C(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-268IC90 TC = 90C31 AICM TC = 25C, 1 ms 80 AGSSOA VGE= 15 V, TVJ = 125C, RG = 1

Ultra-Low VCE(sat) IGBT IXGH 41N60 VCES = 600 VIC25 = 76 AVCE(sat) = 1.6 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C76 AIC90 TC = 90C41 AICM TC = 25C, 1 ms 152 AG = Gate, C = Collector,E = Emitter, TAB = CollectorSSOA VG

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 VIGBT with Diode IXGT 31N60D1 IC25 = 60 AVCE(sat) = 1.7 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V GEC (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C60 A(IXGH)IC90 TC = 90C31 AICM TC = 25C, 1

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 VIXGT 31N60 IC25 = 60 AVCE(sat) = 1.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 V C(TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-268IC90 TC = 90C31 AICM TC = 25C, 1 ms 80 AGSSOA VGE= 15 V, TVJ = 125C, RG = 1

OM11N60SAOM11N55SAPOWER MOSFET IN HERMETIC ISOLATEDTO-254AA PACKAGE600V & 550V, 11 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically packaged products feature the latest

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDDL01N60Z, NDTL01N60ZN-Channel Power MOSFET600 V, 15 WFeatures 100% Avalanche Tested Gate Charge Minimizedhttp://onsemi.com Zener-protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAXCompliant600 V 15 W @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol NDD NDT UnitN-Channel MOSFETDr

NDD01N60, NDT01N60N-Channel Power MOSFET600 V, 8.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 8.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Continuou

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s

UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

FINAL DATA SHEET 600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated Extreme dv/dt RatedG Popular TO-247 or Surface M

FMV11N60E FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-E3 seriesFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00

FMI11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

FMC11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

FMP11N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

SJV01N60 1A , 600V , RDS(ON) 10 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced ADtermination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)() ID (A) Pin Definition: 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252-2LGeneral Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed 1. GATE 2. DRAIN to withstan

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251-3L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed 1. GATE 2. DRAIN to withsta

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETSCJV01N60 N-Channel Power MOSFET TO-92General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and

KP11N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppl

KF1N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF1N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode LC D_A 6.60 + 0.20_B 6.10 + 0.20power supplies.

KF1N60LSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description B DDIM MILLIMETERSThis planar stripe MOSFET has better characteristics, such as fastA 7.20 MAXswitching time, low on resistance, low gate charge and excellent B 5.20 MAXC 0.60 MAXavalanche characteristics. It is mainly suitable for switching mode PD 2.50 MAXDEPTH:0.2E 1.15 MAX

KP11N60DSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correction and swit

Spec. No. : MOS200501 HI-SINCERITY Issued Date : 2005.01.01 Revised Date : 2010.11.10 MICROELECTRONICS CORP. Page No. : 1/6 H01N60S Series Pin Assignment H01N60S Series 3-Lead Plastic TO-92 N-Channel Power Field Effect Transistor Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: SourceDescription 3 1 2 This high voltage MOSFET uses an advanced termination scheme

Spec. No. : MOS200502HI-SINCERITYIssued Date : 2005.03.01Revised Date : 2006.08.31MICROELECTRONICS CORP.Page No. : 1/5H01N60 Series Pin AssignmentH01N60 SeriesN-Channel Power Field Effect TransistorTab3-Lead Plastic TO-252Package Code: JPin 1: Gate3Pin 2 & Tab: Drain2Description 1Pin 3: SourceThis high voltage MOSFET uses an advanced termination scheme topr

AOB11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOB11N60 has been fabricated using an advanced 700V@150high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOWF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOWF11N60 has been fabricated using an 700V@150advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

AOT11N60/AOTF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT11N60 & AOTF11N60 have been fabricated 700V@150using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT1N60600V,1.3A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT1N60 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 1.3Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

AOT11N60/AOTF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT11N60 & AOTF11N60 have been fabricated 700V@150using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOW11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW11N60 has been fabricated using an advanced 700V@150high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

AP01N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount ap

AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de

AP01N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-251(J)AP01N60 series are from Advanced Power innovated design andsilicon process technology

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS1N60SSS1N60 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 8.5 @VGS = 10 Vtransistors are produced using proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF1N60CN- MOS / N-CHANNEL POWER MOSFET SIF1N60CN- MOS / N-CHANN

Spec. No. : C721A3 Issued Date : 2010.10.18 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 8 (typ.) MTN1N60A3 ID : 1A Description The MTN1N60A3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Spec. No. : C721L3 Issued Date : 2014.11.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600VMTN1N60L3ID@VGS=10V, TA=25C 0.4A ID@VGS=10V, TC=25C 0.9A RDSON@VGS=10V, ID=0.2A 7.8(typ) Description The MTN1N60L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast sw

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsulate TransistorsTO-252 Plastic-Encapsula

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors 1N60 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits MAXIMU

FTU01N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) IDAdaptor Charger600V 8.0 1.1ASMPSFeatures: RoHS Compliant D Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesGG DSOrdering InformationPART NUMBER PACKAGE BRAND STO-251Not to ScaleFTU01N

FSN01N60AN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Typ.) ID Adaptor TV Main Power600 V 7.0 1.5 A SMPS Power Supply LCD Panel PowerFeatures: RoHS Compliant Low ON Resistance Low Gate Charge ESD improved CapabilityGDS TO-92Ordering InformationPART NUMBER PACKAGE BRANDPackagesFSN01N60A TO-92 01N60A

BRD1N60(BRCS1N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

BRF1N60(BRCS1N60F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

BR1N60(BRCS1N60R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

BRI1N60(BRCS1N60I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef

BRS1N60(CS1N60S) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

LESHAN RADIO COMPANY, LTD.Power MOSFETL1N601.2 Amps, 600 Volts NChannelThe LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1TO- 251characteristics. This power MOSFET is usually used at high speed switching applications in power suppli

LESHAN RADIO COMPANY, LTD.L1N601.0 Amps, 600 Volts N-CHANNEL MOSFET 123TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche 23 TO-220F-3Lcharacteristics. This power MOSFET is usually used at high speed sw

RoHS 1N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(1.2A, 600Volts)DESCRIPTION The Nell 1N60 is a three-terminal silicon DDdevice with current conduction capabilityof 1.2A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications suc

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU1N60 APPLICATIONSL TO-251 high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25

HFF11N60S Shantou Huashan Electronic Devices Co., Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220FThey are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performa

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFR1N60 APPLICATIONSL TO-92 high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 Tj Operating Junction Temperature 150 1G 2D PD Allowable Power DissipationTc=25

Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

RCM1N60S www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS

RC16MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 12 3TO-92 4

RC16CMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 12 3TO-251 4

SEMICONDUCTORFTK1N60T/LTECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsN-CHANNEL MOSFETDESCRIPTIONThe FTK 1N60T/L is a high voltage MOSFET and is designed to1have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheT : TO-92characteristics. This power MOSFET is usually used at high speedswitching app

SEMICONDUCTORFTK1N60P / F / D / ITECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

SMD Type MOSFETN-Channel Power MOSFET KX1N60DSSOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features ESD improved capability1 2 Depletion mode+0.02+0.10.15 -0.020.95 -0.1 dv/dt rated +0.11.9 -0.2 Pb-free lead plating;ROHS compliant Halogen Free1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

SMD Type MOSFETTransistorsN-Channel Power MOSFETKI1N60 Features1.70 0.1 VDS (V) = 600V ID = 1 A RDS(ON) 10.5 (VGS = 10V)0.42 0.10.46 0.11.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V Gate-Source Voltage VGS 30 TC=25 1 Continuous Drain Current IDA TC=100 0.7 Pulsed Drain Current

SMD Type MOSFETN-Channel MOSFETKI1N60DSSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 600V ID = 0.4 A (VGS = 10V) RDS(ON) 30 (VGS = 10V)D 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2G 1. Gate2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600

SMD Type MOSFETN-Channel MOSFETNFT1N60Unit:mmSOT-2236.500.23.000.14 Features VDS (V) = 600V ID = 0.4 A (VGS = 10V)1 2 3 RDS(ON) 7.9 (VGS = 10V) High switching speed0.2502.30 (typ)0.84 (max)Gauge Plane Improved dv/dt capability0.66 (min)1.Gate 2.Drain3.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25

SVSP11N60FJ(D)D2 11A, 600V DP MOS 2SVSP11N60FJ(D)D2 N MOSFET DP MOS 1 3 SVSP11N60FJ(D)D2 /

SVS11N60D/F/S/FJ/T/KD2 11A, 600V MOS 21SVS11N60D/F/S/FJ/T/KD2 N MOSFET 3TO-263-2L MOS 1 13 3SVS11N60D/F/S/FJ/T/KD2

SVF1N60AM/MJ/B/D/F/H 1A600V N 2123SVF1N60AM/MJ/B/D/F/H N MOS TO-251D-3L F-CellTM VDMOS 11323

SVF1N60M/MJ/N/B/D 1A600V N 21SVF1N60M/MJ/N/B/D N MOS 3TO-252-2L F-CellTM VDMOS 1132

SVSP11N60D(F)(S)(FJD)(T)(K)D2 11A, 600V MOS 2SVSP11N60D(F)(S)(FJD)(T)(K)D2 N 131MOSFET MOS TO-263-2L31 31. 2. 3.

MDP11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDP11N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V DSswitching performance and excellent quality. I = 11A @ V = 10V D GS RDS(ON) 0.55 @ VGS = 10V MDP11N60 is suitable device for SMPS, high Speed switching Applications

MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5 General Description Features The MDZ1N60 uses advanced MagnaChips V = 600V DSMOSFET technology, which provides low on-state I = 0.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 8.5 @VGS = 10V excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and g

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55 General Description Features The MDF11N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V @ T DS jmaxswitching performance and excellent quality. I = 11A @ V = 10V D GS R 0.55 @ V = 10V DS(ON) GSMDF11N60 is suitable device for SMPS, high Spee

MDI1N60S N-Channel MOSFET 600V, 1.0A, 8.5 General Description Features The MDI1N60S uses advanced MagnaChips V = 600V DSMOSFET technology, which provides low on-state ID = 1.0A @VGS = 10V resistance, high switching performance and R 8.5 @V = 10V DS(ON) GSexcellent quality. MDI1N60S is suitable device for SMPS, compact ballast, battery charger and general

WFD1N60WFD1N60WFD1N60WFD1N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 1.3A,600V,R (Max 8.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

WFU1N60WFU1N60WFU1N60WFU1N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 1.3A,600V,R (Max 8.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

WFN1N60WFN1N60WFN1N60WFN1N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 1.3A,600V, R (Max8.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionTh is Power MO SFET is produced

WFN1N60NWFN1N60NWFN1N60NWFN1N60NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures0.5A,600V,RDS(on)(Max15.0)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usin

WFU1N60NSilicon N-Channel MOSFET Features 1A,600V, RDS(on)(Max 15.0)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Th is Pow er MO S FET is pro du c ed usi ng Win se m i s ad va n ced planar stripe, VDMOS technology. This latest technology has

BLV1N60A N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 15 Simple Drive Requirements ID 0.5ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle

BLV1N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 8 Simple Drive Requirements ID 1ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless o

CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w

CTM01N60CTM01N60Crownpo TechnologyCrownpo TechnologyPower MOSFETFeatures General DescriptionRobust High Voltage TerminationThis high voltage MOSFET uses an advanced terminationAvalanche Energy Specifiedscheme to provide enhanced voltage-blocking capabilitySource-to-Drain Diode Recovery Time Comparable to awithout degrading performance over time. In addition,

BRF1N60(CS1N60F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

HY1N60D / HY1N60M600V / 1.0A600V, RDS(ON)=12@VGS=10V, ID=0.5AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMechanical In

SAMWIN SW1N60AN-channel MOSFETBVDSS : 600VFeatures TO-92ID : 0.8A High ruggednessRDS(ON) : 15ohm RDS(ON) (Max 15 )@VGS=10V Gate Charge (Typical 6nC) Improved dv/dt Capability 12 100% Avalanche Tested231. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This technology enab

SW1N60D N-channel Enhanced TO-251/TO-92/TO251S MOSFET Features BVDSS : 600V TO-251 TO-92 TO-251S ID : 1A High ruggedness Low RDS(ON) (Typ 6.6)@VGS=10V RDS(ON) : 6.6 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 1

SAMWIN SW1N60E Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 600 V BVDSS Breakdown voltage temperature ID=250uA, referenced to 25oC 0.76 V/oC / TJ coefficient VDS=600V, VGS=0V 1 uA IDSS Drain to source leakage current

SW1N60DCN-channel Enhanced mode TO-252/SOT223 MOSFETFeaturesTO-252 SOT223BVDSS : 600VID : 1A High ruggedness Low RDS(ON) (Typ 7)@VGS=10VRDS(ON) : 7 Low Gate Charge (Typ6.3 nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:Charger,Adaptor,LED 3311. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET

SAMWIN SW1N60CN-channel D-PAK/I-PAK/TO-92 MOSFETFeaturesTO-251 TO-252 TO-92BVDSS : 600V High ruggednessID : 1.0A RDS(ON) (Max 9 )@VGS=10V Gate Charge (Typical 5.6nC)RDS(ON) : 9.0ohm1 21 Improved dv/dt Capability 23 132 100% Avalanche Tested321. Gate 2. Drain 3. SourceGeneral Description1This power MOSFET is produced with advanced V

SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET TO-92 TO-251 Features BVDSS : 600V ID : 1A High ruggedness RDS(ON) (Max8.5)@VGS=10V RDS(ON) :8.5 Gate Charge (Typical 6.8 nC) Improved dv/dt Capability 1 100% Avalanche Tested 1 2 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS

Oct 2016HFU1N60F / HFD1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantHFU1N60F HFD1N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unless

Dec 2009BVDSS = 600 VRDS(on) typ HFT1N60SID = 0.2 A600V N-Channel MOSFETSOT-2232FEATURES3 Originative New Design1 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lowe

Oct 2016HFT1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantSOT-223 SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value U

Sep 2009BVDSS = 600 VRDS(on) typ HFB1N60SID = 0.3 A600V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

Jan. 2022HFU1N60SA / HFD1N60SA600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 1.0 A Excellent Switching CharacteristicsRDS(on), Typ 9.3 100% Avalanche TestedQg, Typ 3.9 nC RoHS CompliantHFU1N60SA HFD1N60SASymbolTO-

Oct 2016HFB1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantTO-92 SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value Uni

600V/1.2A POWER MOSFET (N-Channel) MSU1N60 600V/1.2A Power MOSFET (N-Channel) General Description MSU1N60 is a N-Channel enhancement mode power MOSFET SOT-223 TO-92 with advanced technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche an

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 C1HD General Description VDSS 600 V CS1N60 C1HD, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 A4H General Description VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1N60L-TM3-Twww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 5 RoHS Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5.

HMS11N60D,HMS11N60,HMS11N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

HMS11N60K/HMS11N60IHMS11N60K/HMS11N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 600V, RDS(on) typ. = 0.34@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F

Silicon N-Channel Power MOSFET HM1N60RGeneral Description VDSS 600 VHM1N60R, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit fo

HMS21N60,HMS21N60FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applica

N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package 0.5 A TO-92 ID 1.0 A IPAK/DPKAVDSS 600 V RdsonVgs=10V 15 Qg 6.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballastsbased on half bridge FEATU

Silicon N-Channel Power MOSFET HM1N60 General Description VDSS 600 VHM1N60PR, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circu

1N60 SeriesN-Channel MOSFET1A, 600V, N H FQU1N60C H1N60U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI1N60FQD1N60C H1N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/1N60 Series Pin AssignmentAPPLICATIONID=1A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60CFDISPW11N60CFDFEATURESStatic drain-source on-resistance:RDS(on)440mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc N-Channel MOSFET Transistor SPP11N60CFDISPP11N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.44Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

isc N-Channel MOSFET Transistor SPU01N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc N-Channel MOSFET Transistor FCP11N60NFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc N-Channel MOSFET Transistor SPP11N60C3ISPP11N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE MA

iscN-Channel MOSFET Transistor IRFR1N60AFEATURESLow drain-source on-resistance:RDS(ON) =7 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV11N60EFEATURESWith TO-220F packagingMaintains both low power loss andlow noiseVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible po

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60C3ISPW11N60C3FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA11N60C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Isc N-Channel MOSFET Transistor SPB11N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

iscN-Channel MOSFET Transistor IRFU1N60AFEATURESLow drain-source on-resistance:RDS(ON) =7 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc N-Channel MOSFET Transistor MDP11N60THFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc N-Channel MOSFET Transistor AOB11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor SPA11N60C3E8185SPA11N60C3E8185FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceA

isc N-Channel MOSFET Transistor AOU1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOTF11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60S5ISPW11N60S5FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor AOT1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor FCH041N60FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Ga

isc N-Channel MOSFET Transistor AOT11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOI1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

iscN-Channel MOSFET Transistor IRFP21N60LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA11N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

Isc N-Channel MOSFET Transistor SPB11N60S5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK31N60WFEATURESWith TO-247 packagingEasy to useHigh speed switchingVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor FCPF11N60NTFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc N-Channel MOSFET Transistor AOD1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOW11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo