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IRFP064N Spec and Replacement


   Type Designator: IRFP064N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 170(max) nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO247AC

 IRFP064N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP064N Specs

 ..1. Size:598K  international rectifier
irfp064npbf.pdf pdf_icon

IRFP064N

PD - 95001 IRFP064NPbF Lead-Free www.irf.com 1 2/11/04 IRFP064NPbF 2 www.irf.com IRFP064NPbF www.irf.com 3 IRFP064NPbF 4 www.irf.com IRFP064NPbF www.irf.com 5 IRFP064NPbF 6 www.irf.com IRFP064NPbF www.irf.com 7 IRFP064NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1... See More ⇒

 ..2. Size:107K  international rectifier
irfp064n.pdf pdf_icon

IRFP064N

PD - 9.1383A IRFP064N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 110A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance... See More ⇒

 ..3. Size:362K  cn evvo
irfp064n.pdf pdf_icon

IRFP064N

IRFP064N N-Channel MOSFET Advanced Process Technology TO-247AC Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of D TO-220 devices. The TO-247 is similar but superior to the VDSS = 55V e... See More ⇒

 ..4. Size:364K  inchange semiconductor
irfp064n.pdf pdf_icon

IRFP064N

isc N-Channel MOSFET Transistor IRFP064N FEATURES Static drain-source on-resistance RDS(on) 8m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-Source... See More ⇒

Detailed specifications: IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , IRFP054N , IRFP064 , P60NF06 , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 , IRFP140A , IRFP140N , IRFP141 .

Keywords - IRFP064N MOSFET specs

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