IRFP064N - описание и поиск аналогов

PD - 95001 IRFP064NPbF Lead-Free www.irf.com 1 2/11/04 IRFP064NPbF 2 www.irf.com IRFP064NPbF www.irf.com 3 IRFP064NPbF 4 www.irf.com IRFP064NPbF www.irf.com 5 IRFP064NPbF 6 www.irf.com IRFP064NPbF www.irf.com 7 IRFP064NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1

PD - 9.1383A IRFP064N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 110A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

IRFP064N N-Channel MOSFET Advanced Process Technology TO-247AC Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of D TO-220 devices. The TO-247 is similar but superior to the VDSS = 55V e

isc N-Channel MOSFET Transistor IRFP064N FEATURES Static drain-source on-resistance RDS(on) 8m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-Source

PD - 96375 AUTOMOTIVE GRADE AUIRFP064N HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.008 Fast Switching G Fully Avalanche Rated ID 110A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifical

PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 5.5m G Fast Switching Fully Avalanche Rated ID = 130A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

PD- 95672 IRFP064PbF Lead-Free 8/2/04 Document Number 91201 www.vishay.com 1 IRFP064PbF Document Number 91201 www.vishay.com 2 IRFP064PbF Document Number 91201 www.vishay.com 3 IRFP064PbF Document Number 91201 www.vishay.com 4 IRFP064PbF Document Number 91201 www.vishay.com 5 IRFP064PbF Document Number 91201 www.vishay.com 6 IRFP064PbF Peak Diode Recovery d

PD - 95501A IRFP064VPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 5.5m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 130A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.009 Ultra Low On- Resistance RoHS* COMPLIANT Qg (Max.) (nC) 190 Very Low Thermal Resistance Qgs (nC) 55 Isolated Central Mounting Hole Qgd (nC) 90 175 C Operating Temperature Fast Swi

DIP Type MOSFET N-Channel MOSFET IRFP064PBF (KRFP064PBF) TO-247 Features VDS (V) = 60V ID = 70 A (VGS = 10V) RDS(ON) 9m (VGS = 10V) Very Low Thermal Resistance Isolated Central Mounting Hole 1 2 3 Fast Switching G D Dynamic dV/dt Rating S D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt

iscN-Channel MOSFET Transistor IRFP064 FEATURES Low drain-source on-resistance RDS(ON) 9m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER