IRFP064N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP064N

Código: IRF064N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 110 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 113.3 nC

Conductancia de drenaje-sustrato (Cd): 4000 pF

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: TO247

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IRFP064N Datasheet (PDF)

1.1. irfp064npbf.pdf Size:598K _upd-mosfet

PD - 95001 IRFP064NPbF • Lead-Free www.irf.com 1 2/11/04 IRFP064NPbF 2 www.irf.com IRFP064NPbF www.irf.com 3 IRFP064NPbF 4 www.irf.com IRFP064NPbF www.irf.com 5 IRFP064NPbF 6 www.irf.com IRFP064NPbF www.irf.com 7 IRFP064NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1

1.2. irfp064n.pdf Size:107K _international_rectifier

PD - 9.1383A IRFP064N HEXFET� Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 0.008? Fast Switching G Fully Avalanche Rated ID = 110A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

3.1. irfp064vpbf.pdf Size:222K _upd-mosfet

PD - 95501A IRFP064VPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 5.5mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 130A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced

3.2. irfp064v.pdf Size:210K _international_rectifier

PD - 94112 IRFP064V HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 5.5m? G Fast Switching Fully Avalanche Rated ID = 130A Optimized for SMPS Applications S Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

3.3. irfp064.pdf Size:171K _international_rectifier

3.4. irfp064pbf.pdf Size:1790K _international_rectifier

PD- 95672 IRFP064PbF � Lead-Free 8/2/04 Document Number: 91201 www.vishay.com 1 IRFP064PbF Document Number: 91201 www.vishay.com 2 IRFP064PbF Document Number: 91201 www.vishay.com 3 IRFP064PbF Document Number: 91201 www.vishay.com 4 IRFP064PbF Document Number: 91201 www.vishay.com 5 IRFP064PbF Document Number: 91201 www.vishay.com 6 IRFP064PbF Peak Diode Recovery dv/dt

3.5. irfp064 sihfp064.pdf Size:1684K _vishay

IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 60 � Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.009 � Ultra Low On- Resistance RoHS* COMPLIANT Qg (Max.) (nC) 190 � Very Low Thermal Resistance Qgs (nC) 55 � Isolated Central Mounting Hole Qgd (nC) 90 � 175 �C Operating Temperature � Fast Switching Configurati

3.6. irfp064pbf.pdf Size:3803K _kexin

DIP Type MOSFET N-Channel MOSFET IRFP064PBF (KRFP064PBF) TO-247 ■ Features ● VDS (V) = 60V ● ID = 70 A (VGS = 10V) ● RDS(ON) ＜ 9mΩ (VGS = 10V) ● Very Low Thermal Resistance ● Isolated Central Mounting Hole 1 2 3 ● Fast Switching G D ● Dynamic dV/dt Rating S D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volt

Otros transistores... IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , IRFP054N , IRFP064 , IRLR2905 , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 , IRFP140A , IRFP140N , IRFP141 .

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