10N60K PDF Specs and Replacement
Type Designator: 10N60K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
Package: TO-220F TO-220F1 TO-220F3
10N60K substitution
10N60K PDF Specs
10n60k.pdf
UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls an... See More ⇒
svf10n60t svf10n60f svf10n60s svf10n60k.pdf
SVF10N60T/F/S/K 10A 600V N 2 SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3 TO-263-2L 1 ... See More ⇒
hms10n60k hms10n60i.pdf
HMS10N60K/HMS10N60I HMS10N60K/HMS10N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 10A, 600V, RDS(on) typ. = 0.42 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 35nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast... See More ⇒
Detailed specifications: 6N60 , 6N60Z , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , MMIS60R580P , 12N60 , 15N60 , 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A .
Keywords - 10N60K MOSFET specs
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