10N60K Datasheet and Replacement
Type Designator: 10N60K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
Package: TO-220F TO-220F1 TO-220F3
10N60K substitution
10N60K Datasheet (PDF)
10n60k.pdf

UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls an
svf10n60t svf10n60f svf10n60s svf10n60k.pdf

SVF10N60T/F/S/K 10A600V N 2SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3TO-263-2L1
svf10n60f svf10n60s svf10n60str svf10n60k.pdf

SVF10N60F/T/S/K 10A600V N SVF10N60F/T/S/K N MOS F-CellTM VDMOS AC-DC
hms10n60k hms10n60i.pdf

HMS10N60K/HMS10N60IHMS10N60K/HMS10N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 10A, 600V, RDS(on) typ. = 0.42@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 35nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast
Datasheet: 6N60 , 6N60Z , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , 2N7002 , 12N60 , 15N60 , 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A .
History: SM2337PSA | IPB049N06L3G | AUIRF7739L2TR | SUN05A50ZD | MDHT4N25URH | IXFM67N10
Keywords - 10N60K MOSFET datasheet
10N60K cross reference
10N60K equivalent finder
10N60K lookup
10N60K substitution
10N60K replacement
History: SM2337PSA | IPB049N06L3G | AUIRF7739L2TR | SUN05A50ZD | MDHT4N25URH | IXFM67N10



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