10N60K MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N60K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 69 nS

Drain-Source Capacitance (Cd): 125 pF

Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm

Package: TO-220F_TO-220F1_TO-220F3

10N60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N60K Datasheet (PDF)

1.1. 10n60k.pdf Size:199K _utc

UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bri

5.1. tmp10n60 tmpf10n60.pdf Size:335K _update

TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax Features ID = 10A  Low gate charge RDS(on) = 0.75 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHS TMP10N60G / TMPF10N60G

5.2. stf10n60m2.pdf Size:1058K _update

STF10N60M2, STFI10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features RDS(on) Order codes VDS @ TJmax max ID STF10N60M2 650 V 0.6 Ω 7.5 A STFI10N60M2 • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 1 2 2 1 3 • Low gate input resistance 2 T

5.3. stl10n60m2.pdf Size:1020K _update

STL10N60M2 N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features VDS @ Order code TJmax RDS(on) max ID STL10N60M2 650 V 0.660 Ω 5.5 A • Extremely low gate charge 1 2 3 • Lower RDS(on) x area vs previous generation 4 • Low gate input resistance PowerFLAT™ 5x6 HV • 100% aval

5.4. t10n60gp.pdf Size:122K _update

CHENMKO ENTERPRISE CO.,LTD T10N60GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 Ampere APPLICATION * General purpose applications. * Other switching applications. TO-220 FEATURE * Package. (TO-220) * DC Current Gain Specified to Ic=10A ( ) .187 4.7 ( ) .148 3.8 ( ) .153 3.9 * High Current Gain-Bandwidth Product : fT=2MHz (Min.) .413 10.5 ( ) .108 ( )

5.5. tmp10n60a tmpf10n60a.pdf Size:609K _update

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 10A <0.7W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N60A / TMPF10N60A TO-220 / TO-220F TMP10N60A / TMPF10N60A RoHS TMP10N60AG / TMPF10N60AG TO-220

5.6. stf10n60m2.pdf Size:1058K _upd

5.7. std10n60m2.pdf Size:1627K _upd

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 Ω 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 • Extremely low gate ch

5.8. stb10n60m2.pdf Size:1627K _upd

5.9. srm10n60.pdf Size:251K _upd

Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60 General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

5.10. stu10n60m2.pdf Size:1627K _upd

5.11. afn10n60t220ft afn10n60t220t.pdf Size:486K _upd-mosfet

AFN10N60 Alfa-MOS 600V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N60 is an N-channel enhancement mode Power 600V/5A,RDS(ON)=1Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

5.12. fmc10n60e.pdf Size:565K _upd-mosfet

FMC10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

5.13. stp10n60m2.pdf Size:1627K _upd-mosfet

5.14. fmp10n60e.pdf Size:555K _upd-mosfet

FMP10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

5.15. fqa10n60c.pdf Size:652K _upd-mosfet

TM QFET FQA10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 600V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 44 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailored to • Fas

5.16. sff10n60.pdf Size:97K _upd-mosfet

SemiWell Semiconductor SFF10N60 N-Channel MOSFET Features ◆ RDS(ON) Max 0.75 ohm at VGS = 10V ◆ Gate Charge ( Typical 48 nC) ◆ Improve dv/dt capability, Fast switching ◆ 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h

5.17. sdp10n60.pdf Size:453K _upd-mosfet

SDP10N60 SDF10N60 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (Ω) Typ VDSS ID Rugged and reliable. 600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M

5.18. msf10n60.pdf Size:907K _upd-mosfet

MSF10N60 600V N-Channel MOSFET Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

5.19. fdbl0110n60.pdf Size:476K _upd-mosfet

March 2015 FDBL0110N60 N-Channel PowerTrench® MOSFET 60 V, 300 A, 1.2 mΩ Features Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation Battery Operated tools S Battery Protection For current package draw

5.20. fmv10n60e.pdf Size:495K _upd-mosfet

FMV10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

5.21. fmi10n60e.pdf Size:562K _upd-mosfet

FMI10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

5.22. hfw10n60s.pdf Size:180K _update_mosfet

May 2010 BVDSS = 600 V RDS(on) typ HFW10N60S ID = 9.5 A 600V N-Channel MOSFET D2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

5.23. tsm10n60ci tsm10n60cz.pdf Size:381K _update_mosfet

TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω)(max) ID (A) 2. Drain 3. Source 600 0.75 @ VGS =10V 10 Features Block Diagram ● Advanced high dense cell design. ● High Power and Current handing capability. Application ● Power Supply. ● Lighting. Ordering Information Part No. Package Packing

5.24. hfp10n60u.pdf Size:201K _update_mosfet

Feb 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFP10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

5.25. wff10n60.pdf Size:695K _update_mosfet

WFF10N60 WFF10N60 WFF10N60 WFF10N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 10A,600V,R (Max 0.75Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 34nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(V =4000V AC) ISO � Improved dv/dt capability General Description This

5.26. cs10n60f.pdf Size:280K _update_mosfet

BRF10N60(CS10N60F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25

5.27. hfs10n60s.pdf Size:243K _update_mosfet

Nov 2007 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Unrivalled Gate Charge : 29 nC (Typ )

5.28. hfs10n60u.pdf Size:302K _update_mosfet

Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

5.29. cs10n60fa9hd.pdf Size:2795K _update_mosfet

CS10N60FA9HD 600V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220F • ESD improved capability. 0.189(4.80) 0.173(4.40) • Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) • Low reverse transfer capacitances. 0.098(2.50) • 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code ■ Mechanical data G D S • E

5.30. cs10n60a8hd.pdf Size:353K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS10N60 A8HD VDSS 600 V General Description： ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.31. hfp10n60s.pdf Size:189K _update_mosfet

Nov 2007 BVDSS = 600 V RDS(on) typ HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(

5.32. php10n60e.pdf Size:18K _philips2

Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 9.6 A g • Low thermal resistance RDS(ON) ≤ 0.75 Ω s GENERAL DESCRIPTION PINNING SOT78 (TO22

5.33. stgb10n60.pdf Size:94K _st

STGP10N60L ? N-CHANNEL 10A - 600V - TO-220 LOGIC LEVEL IGBT TYPE VCES VCE(sat) IC STGP10N60L 600 V < 1.95 V 10 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (V ) cesat LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) HIGH CURRENT CAPABILITY 3 2 OFF LOSSES INCLUDE TAIL CURRENT 1 TO-220 APPLICATIONS ELECTRONIC IGNITION LIGHT DIMMER STATIC RELAYS INTERNAL SC

5.34. fqpf10n60ct fqpf10n60cydtu.pdf Size:1020K _fairchild_semi

April 2007 ® QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 44 nC) DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especiall

5.35. ssf10n60a.pdf Size:255K _fairchild_semi

SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF µ Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.) Ω 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

5.36. fqb10n60ctm.pdf Size:614K _fairchild_semi

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 44 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailore

5.37. fqpf10n60cf.pdf Size:933K _fairchild_semi

February 2007 TM FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 44 nC) DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especia

5.38. fdp10n60nz fdpf10n60nz.pdf Size:659K _fairchild_semi

November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features Description • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ.

5.39. sgp10n60rufd.pdf Size:638K _fairchild_semi

5.40. fdp10n60zu fdpf10n60zut.pdf Size:554K _fairchild_semi

April 2009 TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8? Features Description � RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild�s proprietary, planar � Low gate charge ( Typ. 31nC) stripe, DMOS technology. � Low Crss ( Typ. 15pF) This advance technology has be

5.41. fqi10n60ctu.pdf Size:614K _fairchild_semi

5.42. fqp10n60c fqpf10n60c.pdf Size:1122K _fairchild_semi

5.43. sgs10n60rufd.pdf Size:619K _fairchild_semi

5.44. fqp10n60cf.pdf Size:933K _fairchild_semi

5.45. fqp10n60.pdf Size:59K _fairchild_semi

TIGER ELECTRONIC CO.,LTD Product specification 600V N-Channel MOSFET FQP10N60 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t

5.46. irfbl10n60a.pdf Size:120K _international_rectifier

PD - 91819C SMPS MOSFET IRFBL10N60A HEXFET� Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61? 11A High Speed Power Switching Benefits Low Gate Charge Qg results in simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

5.47. sgw10n60rufd.pdf Size:273K _samsung

CO-PAK IGBT SGW10N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

5.48. sgp10n60ruf.pdf Size:231K _samsung

N-CHANNEL IGBT SGP10N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES

5.49. sgp10n60rufd.pdf Size:272K _samsung

CO-PAK IGBT SGP10N60RUFD FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

5.50. sss10n60a.pdf Size:504K _samsung

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.1 A Improved Gate Charge Extended Safe Operating Area �A Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.51. ssh10n60a.pdf Size:923K _samsung

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area �A Lower Leakage Current : 25 (Max.) @ VDS = 600V ? Low RDS(ON) : 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.52. ssp10n60a.pdf Size:936K _samsung

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology ? RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area �A Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

5.53. sgh10n60rufd.pdf Size:273K _samsung

CO-PAK IGBT SGH10N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

5.54. ika10n60trev2 3g.pdf Size:841K _infineon

IKA10N60T TrenchStop � Series � Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175�C � Short circuit withstand time � 5�s G � E � TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distri

5.55. ihd10n60ra 1 4.pdf Size:823K _infineon

IHD10N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C � Powerful monolithic body diode with low forward voltage designed for soft commutation only � TrenchStop� technology applications offers: G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive

5.56. sgp10n60a sgw10n60a rev2 5g.pdf Size:348K _infineon

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C � 75% lower Eoff compared to previous generation combined with low conduction losses G � Short circuit withstand time � 10 �s E � Designed for: - Motor controls - Inverter PG-TO-247-3 � NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - p

5.57. sgp10n60a sgw10n60a rev2.pdf Size:321K _infineon

5.58. skb10n60a rev2 2g.pdf Size:1143K _infineon

SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C � 75% lower Eoff compared to previous generation combined with low conduction losses � Short circuit withstand time � 10 �s G E � Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners � NPT-Technology for 600V applications offers: - very tight parameter dis

5.59. ikb10n60trev2 3g.pdf Size:1185K _infineon

IKB10N60T TrenchStop� Series p Low Loss DuoPack : IGBT in TrenchStop� and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5�s G E � Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners � TrenchStop� technology f

5.60. igb10n60t rev1 2g.pdf Size:781K _infineon

IGB10N60T TrenchStop� Series p Low Loss IGBT in TrenchStop� and Fieldstop technology C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5?s G E � Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners � TrenchStop� technology for 600 V applications offers : - very tight parameter distribut

5.61. sgb10n60a rev2 3.pdf Size:789K _infineon

SGB10N60A Fast IGBT in NPT-technology C � 75% lower Eoff compared to previous generation combined with low conduction losses G � Short circuit withstand time � 10 �s E � Designed for: - Motor controls - Inverter � NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capabilit

5.62. igp10n60trev2 3g[1].pdf Size:352K _infineon

IGP10N60T TrenchStop� Series q Low Loss IGBT in TrenchStop� and Fieldstop technology � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C C � Short circuit withstand time � 5�s � Designed for : - Variable Speed Drive for washing machines and air G conditioners E - induction cooking - Uninterrupted Power Supply � TrenchStop� and Fieldstop technology fo

5.63. ikp10n60trev2 3g[1].pdf Size:346K _infineon

IKP10N60T TrenchStop� Series p Low Loss DuoPack : IGBT in TrenchStop� and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5?s G E � Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterr

5.64. skp10n60a skw10n60a rev2 3g .pdf Size:363K _infineon

SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C � 75% lower Eoff compared to previous generation combined with low conduction losses � Short circuit withstand time � 10 �s G E � Designed for: - Motor controls - Inverter � NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness,

5.65. ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf Size:56K _ixys

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25�C to 150�C 600 V VCGR TJ = 25�C to 150�C; RGE = 1 M? 600 V TO-263 AA (IXGA) VGES Continuous �20 V VGEM Transient �30 V G IC25 TC = 25�C20 A C (TAB) E IC90 TC = 9

5.66. ixth10n60 ixth10n60a ixtm10n60 ixtm10n60a.pdf Size:64K _ixys

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5.67. ixtp10n60pm.pdf Size:54K _ixys

Preliminary Technical Information IXTP 10N60PM VDSS = 600 V PolarHVTM ID25 = 5 A Power MOSFET ? ? RDS(on) ? ? ? 740 m? ? ? ? ? (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings (IXTP...M) OUTLINE VDSS TJ = 25�C to 175�C 600 V VDGR TJ = 25�C to 175�C; RGS = 1 M? 600 V VGS Continuous �30 V VGSM Transient

5.68. ixti10n60p.pdf Size:239K _ixys

IXTA 10N60P VDSS = 600 V PolarHVTM IXTI 10N60P ID25 = 10 A Power MOSFET IXTP 10N60P RDS(on) ≤ 740 mΩ ≤ Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 175° C 600 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 600 V G VGS Continuous Transient ±30 V S (TAB) ID25 TC = 25° C10 A

5.69. ixsh10n60b2d1 ixsq10n60b2d1.pdf Size:610K _ixys

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25�C to 150�C 600 V VCGR TJ = 25�C to 150�C; RGE = 1 M? 600 V VGES Continuous � 20 V VGEM Transient � 30 V G (TAB) C E IC25 TC = 25�C20 A IC110 TC = 110�C10 A TO-3P

5.70. ixsa10n60b2d1 ixsp10n60b2d1.pdf Size:589K _ixys

High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25�C to 150�C 600 V VCGR TJ = 25�C to 150�C; RGE = 1 M? 600 V VGES Continuous � 20 V G VGEM Transient � 30 V E C (TAB) IC25 TC = 25�C20 A TO-220AB (IXSP) IC110 TC =

5.71. ndf10n60z ndp10n60z.pdf Size:108K _onsemi

NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features � Low ON Resistance � Low Gate Charge http://onsemi.com � Zener Diode-protected Gate � 100% Avalanche Tested � These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VDSS RDS(ON) (MAX) @ 5 A Compliant 600 V 0.75 ? ABSOLUTE MAXIMUM RATINGS (TC = 25�C unless otherwise noted) Rating Symbol NDF NDP Unit N-Channel

5.72. 10n60.pdf Size:411K _utc

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

5.73. kf10n60p-f.pdf Size:413K _kec

KF10N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power su

5.74. sgw10n60a.pdf Size:348K _igbt

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses G • Short circuit withstand time – 10 µs E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

5.75. sgp10n60a.pdf Size:319K _igbt

5.76. skp10n60a.pdf Size:442K _igbt

SKP10N60A, SKB10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - hig

5.77. ixgp10n60a.pdf Size:42K _igbt

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E

5.78. ixgh10n60a.pdf Size:42K _igbt

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E

5.79. sgp10n60rufd.pdf Size:615K _igbt

IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ TC = 100°C, VGE = 15V Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A series is designed f

5.80. ixgh10n60.pdf Size:42K _igbt

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E

5.81. sgb10n60a.pdf Size:785K _igbt

SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses G • Short circuit withstand time – 10 µs E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

5.82. skw10n60a.pdf Size:442K _igbt

5.83. sgs10n60rufd.pdf Size:617K _igbt

April 2001 IGBT SGS10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ TC = 100°C, VGE = 15V Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A series i

5.84. skb10n60a.pdf Size:563K _igbt

SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  NPT-Technology for 600V applications offers: - ver

5.85. ixgp10n60.pdf Size:42K _igbt

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E

5.86. igb10n60t.pdf Size:781K _igbt_a

IGB10N60T TrenchStop® Series p Low Loss IGBT in TrenchStop® and Fieldstop technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5μs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • TrenchStop® technology for 600 V applications offers : - very tight

5.87. ikb10n60t.pdf Size:633K _igbt_a

IKB10N60T TrenchStop® Series p Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175 °C  Short circuit withstand time – 5s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  Tr

5.88. ikd10n60rf.pdf Size:1857K _igbt_a

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD10N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica

5.89. ixxx110n60b4h1.pdf Size:313K _igbt_a

Advance Technical Information VCES = 600V XPTTM 600V IXXK110N60B4H1 IC100 = 110A GenX4TM w/ Diode IXXX110N60B4H1 ≤ ≤ VCE(sat) ≤ 2.0V ≤ ≤ tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Tab VGES Continuous

5.90. ihd10n60ra.pdf Size:2222K _igbt_a

IGBT Reverse conducting IGBT with monolithic body diode IHD10N60RA 600V Soft Switching Series Qualified to automotive standard AECQ101 Data sheet Industrial Power Control IHD10N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOPTM t

5.91. ikd10n60r.pdf Size:1800K _igbt_a

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60R, IKU10N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD10N60R, IKU10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

5.92. ixsp10n60b2d1.pdf Size:586K _igbt_a

High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V E C (TAB) IC25 TC = 25°C20 A TO-220AB (IXSP)

5.93. ixsa10n60b2d1.pdf Size:586K _igbt_a

High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V E C (TAB) IC25 TC = 25°C20 A TO-220AB (IXSP)

5.94. ixsh10n60b2d1.pdf Size:513K _igbt_a

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G (TAB) C E IC25 TC = 25°C20 A IC110 TC = 110°

5.95. ixxr110n60b4h1.pdf Size:284K _igbt_a

Advance Technical Information XPTTM 600V VCES = 600V IXXR110N60B4H1 GenX4TM w/ Diode IC110 = 75A ≤ ≤ VCE(sat) ≤ 2.0V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±

5.96. ikd10n60ra.pdf Size:2126K _igbt_a

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD10N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 6

5.97. ixsq10n60b2d1.pdf Size:513K _igbt_a

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G (TAB) C E IC25 TC = 25°C20 A IC110 TC = 110°

5.98. iku10n60r.pdf Size:1800K _igbt_a

5.99. ixxk110n60b4h1.pdf Size:313K _igbt_a

5.100. ikp10n60t.pdf Size:513K _igbt_a

IKP10N60T TRENCHSTOP™ Series p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : G E - Variable Speed Drive for washing machines, air conditioners and induc

5.101. ika10n60t.pdf Size:510K _igbt_a

IKA10N60T TRENCHSTOP™ Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : G E - very tight param

5.102. h10n60.pdf Size:205K _hsmc

Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.01.20 Revised Date : 2009.08.05 MICROELECTRONICS CORP. Page No. : 1/5 H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (600V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source 3 2 • Switch Mode Power Supply 1 3-Lead TO-220FP) • Uninterruptable Power

5.103. aot10n60.pdf Size:375K _aosemi

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

5.104. aotf10n60.pdf Size:375K _aosemi

5.105. aowf10n60.pdf Size:245K _aosemi

AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.75Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

5.106. aob10n60.pdf Size:375K _aosemi

5.107. aob10n60l.pdf Size:259K _aosemi

5.108. aow10n60.pdf Size:245K _aosemi

5.109. ap10n60w.pdf Size:185K _a-power

AP10N60W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.75? Ў Simple Drive Requirement ID 10A G S Description AP10N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide

5.110. sif10n60c.pdf Size:329K _sisemi

深圳深爱半导体股份有限公司产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N60C

5.111. mtn10n60fp.pdf Size:332K _cystek

Spec. No. : C406FP Issued Date : 2008.12.02 CYStech Electronics Corp. Revised Date :2014.02.10 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDSON(MAX) : 0.75Ω MTN10N60FP ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

5.112. mtn10n60e3.pdf Size:307K _cystek

Spec. No. : C406E3 Issued Date : 2010.09.27 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDSON(MAX) : 0.75Ω MTN10N60E3 ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an

5.113. 10n60 10n60f.pdf Size:2298K _goford

GOFORD 10N60/10N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.75Ω 10A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

5.114. sdf10n60 sdp10n60.pdf Size:453K _samhop

5.115. sdf10n60.pdf Size:165K _solitron

5.116. ssf10n60.pdf Size:531K _silikron

SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69Ω (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

5.117. ssf10n60f.pdf Size:528K _silikron

SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

5.118. ftp10n60c fta10n60c.pdf Size:281K _inpower_semi

FTP10N60C FTA10N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 0.85 Ω 10 A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-220F TO-220 S PART NUMBE

5.119. brf10n60.pdf Size:1041K _blue-rocket-elect

BRF10N60(BRCS10N60FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited f

5.120. cs10n60 a8r.pdf Size:266K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N60 A8R General Description： VDSS 600 V CS10N60 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.121. cs10n60 a8hd.pdf Size:353K _crhj

5.122. cs10n60f a9r.pdf Size:272K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N60F A9R General Description： VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.123. cs10n60f a9hd.pdf Size:351K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N60F A9HD VDSS 600 V General Description： ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

5.124. cm10n60afz.pdf Size:124K _jdsemi

R C1N0F M06AZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 ．主要用途主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2 ．主要特点 1 开关速度快 2 通态电阻小，输入电�

5.125. cm10n60f.pdf Size:127K _jdsemi

R CM10N60F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点开关速度快 1 通态电阻小，输入电容小

5.126. cm10n60az.pdf Size:124K _jdsemi

R CM10N60AZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点开关速度快通态电阻小，输入电容小

5.127. cm10n60.pdf Size:124K _jdsemi

R CM10N60 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点开关速度快通态电阻小，输入电容小 3�

5.128. ftk10n60p f dd.pdf Size:339K _first_silicon

SEMICONDUCTOR FTK10N60P/F/DD TECHNICAL DATA 10 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse

5.129. kx10n60f.pdf Size:1596K _kexin

DIP Type MOSFET N-Channel MOSFET KX10N60F Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● VDS (V) = 600V ● ID = 10 A (VGS = 10V) ±0.20 2.76 ● RDS(ON) ＜ 730mΩ (VGS = 10V) 1 2 3 ● Qg(typ.)= 29.5nC 1.47max ±0.20 0.50 D ±0.20 0.80 2.54typ 2.54typ G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Sou

5.130. sss10n60.pdf Size:14125K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS10N60 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 封装 Package 主要参数 MAIN CHARACTERISTICS 10.0 A ID 600 V VDSS Rdson 0.75Ω （@Vgs=10V） 34 nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源

5.131. mdf10n60gth.pdf Size:1143K _magnachip

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip’s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) ≤ 0.7Ω @ VGS = 10V Applications These devices are suitabl

5.132. mdf10n60bth.pdf Size:780K _magnachip

MDF10N60B N-Channel MOSFET 600V, 10A, 0.7Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip’s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.7Ω @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

5.133. mdfs10n60dth.pdf Size:788K _magnachip

MDFS10N60D N-Channel MOSFET 600V, 10A, 0.75Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip’s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.75Ω @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spee

5.134. mdp10n60gth.pdf Size:1143K _magnachip

5.135. msf10n60.pdf Size:1095K _bruckewell

5.136. wfp10n60.pdf Size:614K _winsemi

WFP10N60 WFP10N60 WFP10N60 WFP10N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 10A,600V,R (Max 0.75Ω)@V =10V DS(on) GS � Ultra-low Gate Charge(Typical 34nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(V =4000V AC) ISO � Improved dv/dt capability General Description This

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

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