10N60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 10N60K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69 nS
Cossⓘ - Capacitancia de salida: 125 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.72 Ohm
Paquete / Cubierta: TO-220F TO-220F1 TO-220F3
Búsqueda de reemplazo de 10N60K MOSFET
10N60K Datasheet (PDF)
10n60k.pdf
UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls an
svf10n60t svf10n60f svf10n60s svf10n60k.pdf
SVF10N60T/F/S/K 10A600V N 2SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3TO-263-2L1
svf10n60f svf10n60s svf10n60str svf10n60k.pdf
SVF10N60F/T/S/K 10A600V N SVF10N60F/T/S/K N MOS F-CellTM VDMOS AC-DC
hms10n60k hms10n60i.pdf
HMS10N60K/HMS10N60IHMS10N60K/HMS10N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 10A, 600V, RDS(on) typ. = 0.42@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 35nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast
Otros transistores... 6N60 , 6N60Z , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , STP65NF06 , 12N60 , 15N60 , 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A .
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