All MOSFET. 12N60 Datasheet

 

12N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 225 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 115 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO-220_TO-220F1_TO-220F_TO-262

12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12N60 Datasheet (PDF)

1.1. tmp12n60a tmpf12n60a.pdf Size:604K _update

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12N60

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 12A < 0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP12N60A / TMPF12N60A TO-220 / TO-220F TMP12N60A / TMPF12N60A RoHS TMP12N60AG / TMPF12N60AG TO-22

1.2. stfi12n60m2.pdf Size:367K _update

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STFI12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in an I²PAKFP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STFI12N60M2 600 V 0.450 Ω 9 A 25 W • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching application

 1.3. tmp12n60 tmpf12n60.pdf Size:332K _update

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TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax Features ID = 12A  Low gate charge RDS(on) = 0.65 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP12N60 / TMPF12N60 TO-220 / TO-220F TMP12N60 / TMPF12N60 RoHS TMP12N60G / TMPF12N60G

1.4. stl12n60m2.pdf Size:461K _update

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STL12N60M2 N-channel 600 V, 0.400 Ω typ., 6.5 A MDmesh™ M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL12N60M2 600 V 0.495 Ω 6.5 A 52 W 1 • Extremely low gate charge 2 3 • Excellent output capacitance (COSS) profile 4 • 100% avalanche tested • Zener-protected PowerFLAT™ 5x6 HV

 1.5. stf12n60m2.pdf Size:381K _update

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STF12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF12N60M2 600 V 0.450 Ω 9 A 25 W • Extremely low gate charge • Excellent output capacitance (COSS) profile 3 • 100% avalanche tested 2 • Zener-protected 1 Applications TO-220FP • Switch

1.6. stu12n60m2.pdf Size:370K _upd

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STU12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STU12N60M2 600 V 0.450 Ω 9 A 85 W • Extremely low gate charge 3 2 • Excellent output capacitance (COSS) profile 1 • 100% avalanche tested • Zener-protected IPAK Applications • Switchi

1.7. fmc12n60es.pdf Size:532K _upd-mosfet

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FMC12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5

1.8. fqa12n60.pdf Size:535K _upd-mosfet

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April 2000 TM QFET QFET QFET QFET FQA12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been e

1.9. afn12n60t220ft afn12n60t220t.pdf Size:461K _upd-mosfet

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AFN12N60 Alfa-MOS 600V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N60 is an N-channel enhancement mode Power 600V/6A,RDS(ON)=0.75Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta

1.10. siha12n60e.pdf Size:171K _upd-mosfet

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SiHA12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 58 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 13 • M

1.11. sihb12n60e.pdf Size:202K _upd-mosfet

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SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.38 • Reduced Switching and Conduction Losses Qg max. (nC) 58 • Ultra Low Gate Charge (Qg) Qgs (nC) 6 • Avalanche Energy Rated (UIS) Qgd (nC) 13 •

1.12. fmi12n60es.pdf Size:529K _upd-mosfet

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FMI12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5

1.13. fmv12n60es.pdf Size:527K _upd-mosfet

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FMV12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±

1.14. stp12n60m2.pdf Size:391K _upd-mosfet

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STP12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP12N60M2 600 V 0.450 Ω 9 A 85 W • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications F

1.15. fmp12n60es.pdf Size:523K _upd-mosfet

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FMP12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V

1.16. sff12n60.pdf Size:97K _upd-mosfet

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SemiWell Semiconductor SFF12N60 N-Channel MOSFET Features ◆ RDS(ON) Max 0.65 ohm at VGS = 10V ◆ Gate Charge ( Typical 52 nC) ◆ Improve dv/dt capability, Fast switching ◆ 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h

1.17. sihp12n60e.pdf Size:210K _upd-mosfet

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SiHP12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.38 • Reduced Switching and Conduction Losses Qg max. (nC) 58 • Ultra Low Gate Charge (Qg) Qgs (nC) 6 • Avalanche Energy Rated (UIS) Qgd (nC) 13 •

1.18. msu12n60f msu12n60t.pdf Size:714K _upd-mosfet

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600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET (N-Channel) General Description  MSU12N60 is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 TO-220F charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and

1.19. fml12n60es.pdf Size:309K _upd-mosfet

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http://www.fujisemi.com FML12N60ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0±0.2 7.0±0.2 0.4±0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

1.20. msf12n60.pdf Size:890K _upd-mosfet

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MSF12N60 600V N-Channel MOSFET Description The MSF12N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

1.21. sihf12n60e.pdf Size:168K _upd-mosfet

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SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.38 • Reduced Switching and Conduction Losses Qg max. (nC) 58 • Ultra Low Gate Charge (Qg) Qgs (nC) 6 • Avalanche Energy Rated (UIS) Qgd (nC) 13 •

1.22. wff12n60.pdf Size:453K _update_mosfet

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WFF12N60 WFF12N60 WFF12N60 WFF12N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features ■ 12A, 600V,R (Max 0.65Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 39nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( V = 4000V AC ) ISO ■ Maximum Junction T

1.23. hfw12n60s.pdf Size:207K _update_mosfet

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Jan 2013 BVDSS = 600 V RDS(on) typ = 0.53 HFW12N60S ID = 12 A 600V N-Channel MOSFET D2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

1.24. cs12n60f.pdf Size:252K _update_mosfet

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BRF12N60 N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. 特点: 低栅电荷,反向传输电容低,开关

1.25. hfp12n60u.pdf Size:171K _update_mosfet

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July 2014 BVDSS = 600 V RDS(on) typ = 0.53 HFP12N60U ID = 12 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

1.26. cs12n60fa9h.pdf Size:251K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.27. hfp12n60s.pdf Size:255K _update_mosfet

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Nov 2007 BVDSS = 600 V RDS(on) typ = 0.53 HFP12N60S ID = 12 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

1.28. hfs12n60s.pdf Size:252K _update_mosfet

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Nov 2007 BVDSS = 600 V RDS(on) typ = 0.53 HFS12N60S ID = 12 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) E

1.29. hfs12n60u.pdf Size:158K _update_mosfet

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July 2014 BVDSS = 600 V RDS(on) typ = 0.53 HFS12N60U ID = 12 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

1.30. cs12n60.pdf Size:253K _update_mosfet

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BR12N60(CS12N60) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. 特点: 低栅电荷,反向传输电容低,

1.31. cs12n60a8hd.pdf Size:356K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS12N60 A8HD VDSS 600 V XGeneral Description: ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.32. cs12n60fa9hd.pdf Size:354K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

1.33. cs12n60a8h.pdf Size:352K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS12N60 A8H VDSS 600 V General Description: ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.34. fqi12n60ctu.pdf Size:821K _fairchild_semi

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September 2007 ® QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21pF) This advanced technology has been especially

1.35. fqaf12n60.pdf Size:537K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQAF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been

1.36. fqpf12n60ct.pdf Size:803K _fairchild_semi

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September 2006 ® QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21 pF) This advanced technology has been especially tailored

1.37. fqb12n60ctm.pdf Size:821K _fairchild_semi

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September 2007 ® QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21pF) This advanced technology has been especially

1.38. fdp12n60nz fdpf12n60nz.pdf Size:284K _fairchild_semi

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September 2010 UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET? 600V, 12A, 0.65? Features Description RDS(on) = 0.53? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 26nC) DOMS technology. Low Crss ( Typ. 12pF) This advance technology has been esp

1.39. fqi12n60tu.pdf Size:540K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technolo

1.40. fqp12n60c fqpf12n60c.pdf Size:1170K _fairchild_semi

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September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially tailored to

1.41. fqp12n60c.pdf Size:1701K _fairchild_semi

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March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored to

1.42. fqpf12n60 fqpf12n60t.pdf Size:547K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been

1.43. fqp12n60.pdf Size:530K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQP12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been

1.44. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

1.45. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

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HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

1.46. fqpf12n60.pdf Size:549K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially t

1.47. hgtg12n60c3d.pdf Size:120K _fairchild_semi

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HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high i

1.48. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

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HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 15

1.49. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha

1.50. fqb12n60tm am002.pdf Size:540K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technolo

1.51. fqpf12n60c.pdf Size:1123K _fairchild_semi

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November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored

1.52. 12n60.pdf Size:375K _utc

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UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior

1.53. hgtg12n60c3d.pdf Size:106K _harris_semi

12N60
12N60

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device

1.54. hgtp12n60c3.pdf Size:188K _harris_semi

12N60
12N60

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR

1.55. hgtg12n60c3d .pdf Size:102K _harris_semi

12N60
12N60

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high

1.56. hgtg12n60d1d.pdf Size:46K _harris_semi

12N60
12N60

S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time <500ns GATE Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) With Anti-Parallel Diode tRR < 60ns Description The IGBT is a MOS gated high voltage switching

1.57. kf12n60p-f.pdf Size:898K _kec

12N60
12N60

KF12N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ·VDSS=600V, ID=

1.58. ixgh12n60cd1.pdf Size:59K _igbt

12N60
12N60

HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 A LightspeedTM Series VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Co

1.59. ixgp12n60c.pdf Size:94K _igbt

12N60
12N60

VCES = 600 V IXGA 12N60C HiPerFASTTM IGBT IC25 = 24 A IXGP 12N60C VCE(sat)= 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 AA (IXGA) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V ↑ C (tab) E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-220 AB IC90 TC = 90°C12 A (IXGP) ICM TC = 25°C, 1 ms 48

1.60. ixgh12n60c.pdf Size:54K _igbt

12N60
12N60

IXGH 12N60C HiPerFASTTM IGBT VCES = 600 V LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G IC25 TC = 25°C24 A C E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collecto

1.61. ixgp12n60cd1.pdf Size:69K _igbt

12N60
12N60

IXGA 12N60CD1 HiPerFASTTM IGBT VCES = 600 V IXGP 12N60CD1 LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 (IXGA) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C24 A IC90 TC = 90°C12 A TO-220 AB ICM TC = 25°C,

1.62. ixgh12n60b.pdf Size:33K _igbt

12N60
12N60

HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collector,

1.63. ixgh12n60bd1.pdf Size:34K _igbt

12N60
12N60

IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collect

1.64. ixgp12n60b.pdf Size:69K _igbt

12N60
12N60

IXGA 12N60B VCES = 600 V HiPerFASTTM IGBT IXGP 12N60B IC25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G E VGEM Transient ±30 V IC25 TC = 25°C24 A IC90 TC = 90°C12 A TO-263 AA (IXGA) ICM TC =

1.65. ixgr12n60c.pdf Size:54K _igbt_a

12N60
12N60

IXGR 12N60C VCES = 600 V HiPerFASTTM IGBT IC25 = 15 A ISOPLUS247TM VCE(sat)= 2.7 V (Electrically Isolated Back Surface) tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25°C15 A IC90 TC = 90°C

1.66. h12n60.pdf Size:149K _hsmc

12N60
12N60

Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.01.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 H12N60F H12N60F N-Channel Power MOSFET (600V,12A) 3-Lead TO-220FP) Plastic Package Package Code: F Applications Pin 1: Gate • Switch Mode Power Supply Pin 2: Drain Pin 3: Source • Uninterruptable Power Supply 3 2 1 • High Speed Power Switching

1.67. aowf12n60.pdf Size:262K _aosemi

12N60
12N60

AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS The AOW12N60 & AOWF12N60 have been fabricated 700V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.55Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss a

1.68. aotf12n60fd.pdf Size:590K _aosemi

12N60
12N60

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.69. aob12n60fd.pdf Size:590K _aosemi

12N60
12N60

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.70. aot12n60fd.pdf Size:590K _aosemi

12N60
12N60

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.71. aow12n60.pdf Size:262K _aosemi

12N60
12N60

AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS The AOW12N60 & AOWF12N60 have been fabricated 700V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.55Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss a

1.72. aotf12n60.pdf Size:450K _aosemi

12N60
12N60

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.55Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

1.73. aot12n60.pdf Size:450K _aosemi

12N60
12N60

AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.55Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss al

1.74. sif12n60c.pdf Size:293K _sisemi

12N60
12N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF12N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF12N60C

1.75. jcs12n60t.pdf Size:1072K _jilin_sino

12N60
12N60

N-CHANNEL MOSFET R JCS12N60T Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65Ω (@Vgs=10V) 39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100% avalanche tested Improved dv/dt capability

1.76. mtn12n60fp.pdf Size:453K _cystek

12N60
12N60

Spec. No. : C743FP Issued Date : 2011.05.09 CYStech Electronics Corp. Revised Date : 2014.05.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS :600V RDS(ON) : 0.6Ω typ. MTN12N60FP ID : 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

1.77. mtn12n60e3.pdf Size:304K _cystek

12N60
12N60

Spec. No. : C743E3 Issued Date : 2009.10.08 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS :660V @Tj=150°C RDS(ON) : 0.65Ω MTN12N60E3 ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist

1.78. 12n60 12n60f.pdf Size:2259K _goford

12N60
12N60

GOFORD 12N60/12N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.65Ω 12A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

1.79. ssf12n60f.pdf Size:536K _silikron

12N60
12N60

 SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55Ω (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

1.80. brf12n60.pdf Size:850K _blue-rocket-elect

12N60
12N60

BRF12N60(BRCS12N60FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑

1.81. br12n60.pdf Size:988K _blue-rocket-elect

12N60
12N60

BR12N60(BRCS12N60R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低的门槛电压、反向传输电容小、开关速度快。 Low gate charge, Low Crss , Fast switching. 用途 / Applications 该器件适用于高效电源模块,主动式 PFC 电路和基于

1.82. hfh12n60.pdf Size:608K _shantou-huashan

12N60
12N60

 Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

1.83. cs12n60 a8r.pdf Size:266K _crhj

12N60
12N60

Silicon N-Channel Power MOSFET R ○ CS12N60 A8R General Description: VDSS 600 V CS12N60 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.84. cs12n60f a9hd.pdf Size:354K _crhj

12N60
12N60

Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

1.85. cs12n60 a8hd.pdf Size:356K _crhj

12N60
12N60

Silicon N-Channel Power MOSFET R ○ CS12N60 A8HD VDSS 600 V XGeneral Description: ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.86. cs12n60 a8h.pdf Size:352K _crhj

12N60
12N60

Silicon N-Channel Power MOSFET R ○ CS12N60 A8H VDSS 600 V General Description: ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.87. cs12n60f a9h.pdf Size:252K _crhj

12N60
12N60

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.88. cs12n60f a9r.pdf Size:270K _crhj

12N60
12N60

Silicon N-Channel Power MOSFET R ○ CS12N60F A9R General Description: VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.89. cm12n60af.pdf Size:126K _jdsemi

12N60
12N60

R CM12N60AF 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容小

1.90. cm12n60a to220a.pdf Size:123K _jdsemi

12N60
12N60

R CM12N60A 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

1.91. sss12n60.pdf Size:8243K _shenzhen-tuofeng-semi

12N60
12N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 封装 Package 主要参数 MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65Ω (@Vgs=10V) 39nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源

1.92. msf12n60.pdf Size:890K _bruckewell

12N60
12N60

MSF12N60 600V N-Channel MOSFET Description The MSF12N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

1.93. wfp12n60.pdf Size:535K _winsemi

12N60
12N60

WFP12N60 WFP12N60 WFP12N60 WFP12N60 Silicon N-Channel MOSFET Features ■ 12A, 600V,R (Max 0.65Ω)@V =10V DS(on) GS ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest tech

Datasheet: 6N60Z , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , 10N60K , 2SK3562 , 15N60 , 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A , 1N60 .

 
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