All MOSFET. 7N60Z Datasheet

 

7N60Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N60Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 170 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.83 Ohm

Package: TO-220_TO-220F1_TO-263

7N60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

7N60Z Datasheet (PDF)

1.1. tmd7n60z tmu7n60z.pdf Size:457K _update

7N60Z 7N60Z

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 7A <1.2W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD7N60Z / TMU7N60Z D-PAK/I-PAK TMD7N60Z / TMU7N60Z RoHS TMD7N60ZG / TMU7N60ZG D-PAK/I-PAK TMD7N6

1.2. tmp7n60z tmpf7n60z.pdf Size:611K _update

7N60Z 7N60Z

TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 7A <1.2W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP7N60Z / TMPF7N60Z TO-220 / TO-220F TMP7N60Z / TMPF7N60Z RoHS TMP7N60ZG / TMPF7N60ZG TO-220 / TO-220F TMP7N60ZG /

 1.3. 7n60z.pdf Size:180K _utc

7N60Z 7N60Z

UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 ? DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1 TO-220F1 characteristics. This power MOSFET is usually used in high speed switchin

Datasheet: 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z , 7N60A , 7N60 , 2SK105 , 7N60K , 8N60 , 10N60 , 10N60K , 12N60 , 15N60 , 18N60 , 20N60 .

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