7N60Z Datasheet and Replacement
Type Designator: 7N60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
Package: TO-220 TO-220F1 TO-263
7N60Z substitution
7N60Z Datasheet (PDF)
7n60z.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1TO-220F1characteristics. This power MOSFET is usually used in high speed swi
tmd7n60z tmu7n60z.pdf
TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A
tmp7n60z tmpf7n60z.pdf
TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A
Datasheet: 5N65 , 5N65K , 6N65 , 5N60 , 6N60 , 6N60Z , 7N60A , 7N60 , EMB04N03H , 7N60K , 8N60 , 10N60 , 10N60K , 12N60 , 15N60 , 18N60 , 20N60 .
History: NTD20N06L | IRFS251 | IRFS252 | NTD24N06 | NTD20N06 | SIHL520L | IPD50R399CP
Keywords - 7N60Z MOSFET datasheet
7N60Z cross reference
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History: NTD20N06L | IRFS251 | IRFS252 | NTD24N06 | NTD20N06 | SIHL520L | IPD50R399CP
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