All MOSFET. 8N60 Datasheet

 

8N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 8N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 147 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60.5 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO-220_TO-220F_TO-220F1_TO-262

8N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

8N60 Datasheet (PDF)

1.1. mcpf08n60.pdf Size:595K _update

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8N60



1.2. stw48n60m2-4.pdf Size:760K _update

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STW48N60M2-4 N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) D DS @ T R max I STW48N60M2-4 650 V 0.07 Ω 42 A  Excellent switching performance thanks to the extra driving source pin  Extremely low gate charge  Excellent output capacitance (C ) profile oss  100% a

 1.3. stw28n60m2.pdf Size:1184K _update

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STB28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features TAB VDS @ RDS(on) Order code ID 3 TJmax max 1 3 2 1 STB28N60M2 D2PAK TO-220 STP28N60M2 650 V 0.150 Ω 22 A STW28N60M2 • Extremely low gate charge 3 • Excellent output capacitance (Coss) prof

1.4. stw18n60m2.pdf Size:1200K _update

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STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 Ω 13 A TAB STW18N60M2 • Extremely low gate charge 3 3 • Lower RDS(on) x area vs previous generation

 1.5. tmp8n60az tmpf8n60az.pdf Size:625K _update

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TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 7.5A <1.2W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMP8N60AZ / TMPF8N60AZ TO-220 / TO-220F TMP8N60AZ / TMPF8N60AZ RoHS TMP8N60AZG /

1.6. stf28n60m2 stfi28n60m2.pdf Size:883K _update

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STF28N60M2, STFI28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF28N60M2 650 V 0.150 Ω 22 A STFI28N60M2 3 • Extremely low gate charge 2 1 • Excellent output capacitance (Coss) profile TO-220FP 1 2 3 • 100% avalanche tested 2 I PAKFP

1.7. stw48n60m2.pdf Size:780K _update

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STW48N60M2 N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) D DS @ T R max I STW48N60M2 650 V 0.07 Ω 42 A  Extremely low gate charge  Excellent output capacitance (C ) profile OSS 3 2  100% avalanche tested 1  Zener-protected TO-247 Applications  Switchin

1.8. tsp8n60m tsf8n60m.pdf Size:801K _update

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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed

1.9. stf18n60m2.pdf Size:1066K _update

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STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF18N60M2 650 V 0.28 Ω 13 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 2 1 • Low gate input resistance TO-220FP • 100% avalanche tested • Zener-protected

1.10. stl18n60m2.pdf Size:940K _update

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STL18N60M2 N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features VDS @ Order code TJmax RDS(on) max ID STL18N60M2 650 V 0.308 Ω 9 A • Extremely low gate charge 1 2 3 • Lower RDS(on) x area vs previous generation 4 • Low gate input resistance PowerFLAT™ 5x6 HV • 100% avalanche

1.11. tmd8n60az tmu8n60az.pdf Size:472K _update

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TMD8N60AZ(G)/TMU8N60AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 7.5A <1.2W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD8N60AZ / TMU8N60AZ D-PAK/I-PAK TMD8N60AZ / TMU8N60AZ RoHS TMD8N6

1.12. stb28n60m2.pdf Size:1184K _upd

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STB28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features TAB VDS @ RDS(on) Order code ID 3 TJmax max 1 3 2 1 STB28N60M2 D2PAK TO-220 STP28N60M2 650 V 0.150 Ω 22 A STW28N60M2 • Extremely low gate charge 3 • Excellent output capacitance (Coss) prof

1.13. stp28n60m2.pdf Size:1184K _upd

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STB28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features TAB VDS @ RDS(on) Order code ID 3 TJmax max 1 3 2 1 STB28N60M2 D2PAK TO-220 STP28N60M2 650 V 0.150 Ω 22 A STW28N60M2 • Extremely low gate charge 3 • Excellent output capacitance (Coss) prof

1.14. stb18n60m2.pdf Size:1200K _upd

8N60
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STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 Ω 13 A TAB STW18N60M2 • Extremely low gate charge 3 3 • Lower RDS(on) x area vs previous generation

1.15. irfps38n60l irfps38n60lpbf.pdf Size:187K _upd-mosfet

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IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ()VGS = 10 V 0.12 RoHS* • Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 • Enhanced dV/dt Capabilities Offer Improved Ruggedness

1.16. sihf28n60ef.pdf Size:156K _upd-mosfet

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SiHF28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY • Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology • Reduced trr, Qrr, and IRRM RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.123 • Low figure-of-merit (FOM): Ron x Qg Qg (Max.) (nC) 120 • Low input capacitance (Ciss) Qgs (nC) 17 • Low switc

1.17. sihfps38n60l.pdf Size:187K _upd-mosfet

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IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ()VGS = 10 V 0.12 RoHS* • Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 • Enhanced dV/dt Capabilities Offer Improved Ruggedness

1.18. sihp28n60ef.pdf Size:158K _upd-mosfet

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SiHP28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY • Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology • Reduced trr, Qrr, and IRRM RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.123 • Low figure-of-merit (FOM): Ron x Qg Qg (Max.) (nC) 120 • Low input capacitance (Ciss) Qgs (nC) 17 • Low switc

1.19. msf8n60.pdf Size:339K _upd-mosfet

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MSF8N60 N-Channel Enhancement Mode Power MOSFET Description The MSF8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Sim

1.20. sihg28n60ef.pdf Size:176K _upd-mosfet

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SiHG28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY • Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology • Reduced trr, Qrr, and IRRM RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.123 • Low figure-of-merit (FOM): Ron x Qg Qg (Max.) (nC) 120 • Low input capacitance (Ciss) Qgs (nC) 17 • Low switc

1.21. sihb28n60ef.pdf Size:200K _upd-mosfet

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SiHB28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY • Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology • Reduced trr, Qrr, and IRRM RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.123 • Low figure-of-merit (FOM): Ron x Qg Qg (Max.) (nC) 120 • Low input capacitance (Ciss) Qgs (nC) 17 • Low switc

1.22. stp18n60m2.pdf Size:1200K _upd-mosfet

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STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 Ω 13 A TAB STW18N60M2 • Extremely low gate charge 3 3 • Lower RDS(on) x area vs previous generation

1.23. hfs8n60u.pdf Size:308K _update_mosfet

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August 2012 BVDSS = 600 V RDS(on) typ HFS8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Are

1.24. cs8n60fa9h.pdf Size:2681K _update_mosfet

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CS8N60FA9H 600V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220F • ESD improved capability. 0.189(4.80) 0.173(4.40) • Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) • Low reverse transfer capacitances. 0.098(2.50) • 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code ■ Mechanical data G D S • Epo

1.25. hfp8n60s.pdf Size:194K _update_mosfet

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Dec 2006 BVDSS = 600 V RDS(on) typ HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

1.26. hfp8n60u.pdf Size:197K _update_mosfet

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August 2012 BVDSS = 600 V RDS(on) typ HFP8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

1.27. cs8n60f.pdf Size:238K _update_mosfet

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BRF8N60(CS8N60F) N-Channel MOSFET/N 沟 MOS 晶体管 用途:用于高效 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参

1.28. qm08n60f.pdf Size:321K _update_mosfet

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 QM08N60F 機密 第 1 頁 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM08N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.0 Ω 8A most of the synchronous buck converter applications . Applications The QM08N60F meet the RoHS and

1.29. kp8n60f.pdf Size:382K _update_mosfet

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KP8N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli

1.30. hfd8n60u.pdf Size:203K _update_mosfet

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Jan 2014 BVDSS = 600 V RDS(on) typ HFD8N60U / HFU8N60U ID = 6.0 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD8N60U HFU8N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 n

1.31. wvm8n60.pdf Size:23K _update_mosfet

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM8N60(MTM8N60) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power

1.32. kp8n60d.pdf Size:385K _update_mosfet

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KP8N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KP8N60D This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for active power factor C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 correctio

1.33. cs8n60a8h.pdf Size:347K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS8N60 A8H General Description: VDSS 600 V CS8N60 A8H, the silicon N-channel Enhanced ID 8 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.34. hfs8n60s.pdf Size:180K _update_mosfet

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Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS

1.35. mtw8n60e.pdf Size:194K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW8N60E/D Designer's? Data Sheet MTW8N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET NChannel EnhancementMode Silicon Gate 8.0 AMPERES 600 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.55 OHM scheme to provide enhanced

1.36. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi

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® QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

1.37. fqb8n60c fqi8n60c.pdf Size:965K _fairchild_semi

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October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

1.38. fdp8n60zu fdpf8n60zut.pdf Size:534K _fairchild_semi

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April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35? Features Description RDS(on) = 1.15m? ( Typ.) @ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 10pF) This advanced technology has been

1.39. fqp8n60c fqpf8n60c.pdf Size:927K _fairchild_semi

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QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc

1.40. fqp8n60c.pdf Size:1332K _fairchild_semi

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April 2014 FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description Features These N-Channel enhancement mode power field effect 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 3.75 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to mi

1.41. fqb8n60cf fqb8n60cftm.pdf Size:1032K _fairchild_semi

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October 2008 TM QFET FQB8N60CF 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 28nC) DMOS technology. • Low Crss ( typical 12pF) This advanced technology has been especially tailored to

1.42. fqpf8n60cf.pdf Size:750K _fairchild_semi

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February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast swi

1.43. fqi8n60ctu.pdf Size:965K _fairchild_semi

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October 2008 QFET® FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especiall

1.44. irfps38n60l.pdf Size:167K _international_rectifier

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PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m? 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in s

1.45. irfps38n60l sihfps38n60l.pdf Size:185K _vishay

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IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) (?)VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd (nC) 16

1.46. ixfk48n60p ixfx48n60p.pdf Size:223K _ixys

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IXFK 48N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 48N60P ID2 = 48 A Power MOSFET ? ? RDS(on) ? 135m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V G D (TAB) VGSM Transient 4

1.47. ixfh18n60p ixfv18n60p.pdf Size:172K _ixys

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IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET ? ? IXFV 18N60PS RDS(on) ? 400 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 30 V VGSM Tranisent 4

1.48. ixgh48n60c3c1.pdf Size:185K _ixys

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Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 2.5V ? ? ? tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V G C VGES Continuous 20 V E ( TAB ) VGEM Transient 30 V G

1.49. ixgh48n60b3c1.pdf Size:187K _ixys

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Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 1.8V ? ? ? tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 600 V G VCGR TJ = 25C to 150C, RGE = 1M? 600 V ( TAB ) C E VGES Continuous 20 V VGEM Transient

1.50. ixgh48n60a3d1.pdf Size:163K _ixys

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VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 with Diode IC110 = 48A ? VCE(sat) ? ? 1.35V ? ? Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) C E IC110 TC = 110C 48 A ICM TC = 25C, 1ms 300 A SSOA VGE

1.51. ixfn48n60p.pdf Size:84K _ixys

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IXFN 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET ? ? RDS(on) ? ? ? 140 m? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 200 ns ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25C to 150C; RGS = 1 M? 600 V E153432 S VGSS Continuous 30 V G VGSM Transient

1.52. ixfq28n60p3 ixfh28n60p3.pdf Size:130K _ixys

8N60
8N60

Advance Technical Information Polar3TM HiperFETTM VDSS = 600V IXFQ28N60P3 ID25 = 28A Power MOSFETs IXFH28N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 260mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V TO-247 ( IX

1.53. ixtq18n60p ixtv18n60p.pdf Size:171K _ixys

8N60
8N60

IXTQ 18N60P VDSS = 600 V PolarHVTM IXTV 18N60P ID25 = 18 A Power MOSFET ? ? IXTV 18N60PS RDS(on) ? ? ? 420 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 30 V G VGSM Tranisent 40 V D (TAB) D S ID25 TC = 25C18 A IDM TC = 25C, pul

1.54. ixfr48n60p.pdf Size:144K _ixys

8N60
8N60

IXFR 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 32 A Power MOSFET ? ? RDS(on) ? 150 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 600

1.55. ixga48n60c3-ixgh48n60c3-ixgp48n60c3.pdf Size:223K _ixys

8N60
8N60

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 ? VCE(sat) ? ? 2.5V ? ? High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25C to 150C 600 V E (TAB) VCGR TJ = 25C to 150C, RGE = 1M? 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C ( Limi

1.56. ixfa18n60x ixfh18n60x ixfp18n60x.pdf Size:183K _ixys

8N60
8N60

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X   RDS(on)    230m     IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to

1.57. ndf08n60z-d.pdf Size:112K _onsemi

8N60
8N60

NDF08N60Z, NDP08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features Low ON Resistance Low Gate Charge http://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (MAX) @ 3.5 A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) 600 V 0.95 W Rating Symbol NDF08N60Z NDP08N60Z Unit Drain-to-Source Voltage VDSS 600 V N-Channel Co

1.58. 8n60.pdf Size:232K _utc

8N60
8N60

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

1.59. 18n60.pdf Size:167K _utc

8N60
8N60

UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar 1 stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is TO-247 suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ? 0.5? @VGS = 1

1.60. kf8n60p-f.pdf Size:579K _kec

8N60
8N60

KF8N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF8N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli

1.61. 8n60.pdf Size:59K _inchange_semiconductor

8N60
8N60

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25? ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2?(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power suppl

1.62. ixgh28n60b3d1.pdf Size:65K _igbt

8N60
8N60

Advance Technical Information IXGH28N60B3D1 VCES = 600V PolarHVTM IGBT IC110 = 28A ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V C (TAB) C E IC25 TC = 25°C 66 A IC110 TC = 110°C 28 A IF110 TC = 110°C 10 A

1.63. ixgh48n60c3c1.pdf Size:183K _igbt

8N60
8N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A ≤ Diode VCE(sat) ≤ 2.5V ≤ ≤ ≤ tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V E ( TAB ) VGEM

1.64. ixgh28n60bd1.pdf Size:515K _igbt

8N60
8N60

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A

1.65. ixgh48n60b3.pdf Size:221K _igbt

8N60
8N60

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 1

1.66. ixgh48n60b3c1.pdf Size:185K _igbt

8N60
8N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A ≤ Diode VCE(sat) ≤ 1.8V ≤ ≤ ≤ tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V ( TAB ) C E VGES Continuous ± 20

1.67. ixga48n60c3.pdf Size:240K _igbt

8N60
8N60

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 ≤ ≤ 2.5V ≤ ≤ High-Speed PT IGBTs for VCE(sat) ≤ 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Features VGES Continuous ± 20 V Optimized for Low Switching Losses VGEM Tra

1.68. ixgh48n60a3d1.pdf Size:201K _igbt

8N60
8N60

VCES = 600V GenX3TM 600V IGBT IXGH48N60A3D1 w/Diode IC110 = 48A ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ± 20 V VGEM Transient ± 30 V G = Gate C = Collector E = Emitter Tab = Colle

1.69. ixga48n60b3.pdf Size:221K _igbt

8N60
8N60

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 1

1.70. ixgh48n60c3d1.pdf Size:201K _igbt

8N60
8N60

VCES = 600V IXGH48N60C3D1 GenX3TM 600V IGBT IC110 = 48A with Diode ≤ VCE(sat) ≤ 2.5V ≤ ≤ ≤ tfi(typ) = 38ns High speed PT IGBT for 40-100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C E VGEM Transient ±30 V ( TAB ) IC25 TC = 25°C (Limited by Leads)

1.71. ixgi48n60c3.pdf Size:240K _igbt

8N60
8N60

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 ≤ ≤ 2.5V ≤ ≤ High-Speed PT IGBTs for VCE(sat) ≤ 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Features VGES Continuous ± 20 V Optimized for Low Switching Losses VGEM Tra

1.72. ixga48n60a3.pdf Size:234K _igbt

8N60
8N60

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC =

1.73. ixgh28n60b.pdf Size:588K _igbt

8N60
8N60

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C40 A (IXGH) IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

1.74. ixgh48n60b3d1.pdf Size:200K _igbt

8N60
8N60

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH48N60B3D1 with Diode IC110 = 48A ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G ( TAB ) C E I

1.75. ixgh48n60c3.pdf Size:240K _igbt

8N60
8N60

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 ≤ ≤ 2.5V ≤ ≤ High-Speed PT IGBTs for VCE(sat) ≤ 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Features VGES Continuous ± 20 V Optimized for Low Switching Losses VGEM Tra

1.76. ixgh48n60a3.pdf Size:234K _igbt

8N60
8N60

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC =

1.77. ixgt28n60b.pdf Size:588K _igbt_a

8N60
8N60

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C40 A (IXGH) IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

1.78. ixgr48n60c3d1.pdf Size:205K _igbt_a

8N60
8N60

GenX3TM 600V IGBT VCES = 600V IXGR48N60C3D1 with Diode IC25 = 56A ≤ VCE(sat) ≤ 2.7V ≤ ≤ ≤ (Electrically Isolated Back Surface) tfi(typ) = 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC

1.79. ixgr48n60b3.pdf Size:96K _igbt_a

8N60
8N60

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBTs IXGR48N60B3 IC25 = 60A IXGR48N60B3D1 (Electrically Isolated Back ≤ VCE(sat) ≤ ≤ 2.1V ≤ ≤ Surface) tfi(typ) = 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching ISOPLUS247TM IXGR_B3 IXGR_B3D1 E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°

1.80. ixgp48n60b3.pdf Size:221K _igbt_a

8N60
8N60

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-220 (IXGP) VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 1

1.81. ixgp48n60c3.pdf Size:240K _igbt_a

8N60
8N60

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 ≤ ≤ 2.5V ≤ ≤ High-Speed PT IGBTs for VCE(sat) ≤ 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Features VGES Continuous ± 20 V Optimized for Low Switching Losses VGEM Tra

1.82. ixgr48n60b3d1.pdf Size:96K _igbt_a

8N60
8N60

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBTs IXGR48N60B3 IC25 = 60A IXGR48N60B3D1 (Electrically Isolated Back ≤ VCE(sat) ≤ ≤ 2.1V ≤ ≤ Surface) tfi(typ) = 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching ISOPLUS247TM IXGR_B3 IXGR_B3D1 E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°

1.83. ixgp48n60a3.pdf Size:234K _igbt_a

8N60
8N60

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 ≤ VCE(sat) ≤ ≤ 1.35V ≤ ≤ Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC =

1.84. ixgt28n60bd1.pdf Size:515K _igbt_a

8N60
8N60

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A

1.85. 8n60p 8n60f.pdf Size:748K _wietron

8N60
8N60

8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 8 AMPERES DRAIN SOURCE VOLTAGE Description: 600 VOLTAGE The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually us

1.86. aotf8n60.pdf Size:441K _aosemi

8N60
8N60

AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.9Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

1.87. aot8n60.pdf Size:441K _aosemi

8N60
8N60

AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.9Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

1.88. ap08n60i-hf.pdf Size:59K _a-power

8N60
8N60

AP08N60I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching Characteristic RDS(ON) 0.85? Ў Simple Drive Requirement ID 8A G Ў RoHS Compliant & Halogen-Free S Description AP08N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter ap

1.89. mtn8n60fp.pdf Size:285K _cystek

8N60
8N60

Spec. No. : C409FP-A Issued Date : 2009.04.29 CYStech Electronics Corp. Revised Date : 2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDSON(TYP) : 1.08Ω MTN8N60FP ID : 7.5A Description The MTN8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

1.90. mtn8n60e3.pdf Size:287K _cystek

8N60
8N60

Spec. No. : C409E3-A Issued Date : 2009.08.04 CYStech Electronics Corp. Revised Date :2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V @Tj=150℃ RDS(ON) : 1.2Ω (max.) MTN8N60E3 ID : 7.5A Description The MTN8N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device des

1.91. 8n60a.pdf Size:1380K _goford

8N60
8N60

GOFORD 8N60A Description Features • VDSS RDS(ON) ID @ 10V (typ) 8.5A 600V 0.94Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • High frequency switching mode power supply • Uninterruptible Power Supply (UPS) • Electronic ballast Absolute Maximum Ratings TC=25℃ unless otherwise specified Max. Symbol Parameter Un

1.92. 8n60 8n60f.pdf Size:3013K _goford

8N60
8N60

GOFORD 8N60/8N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 600V 1.2Ω 7.5A This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active

1.93. sdf08n60 sdp08n60.pdf Size:188K _samhop

8N60
8N60

SDP08N60 SDF08N60 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (Ω) Typ VDSS ID Rugged and reliable. 600V 8A 0.89 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Ma

1.94. ssf8n60.pdf Size:434K _silikron

8N60
8N60

SSF8N60 Features VDSS = 600V ■ Extremely high dv/dt capability ID = 8A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.85Ω (typ.) ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF8N60 is a new generation of high voltage N–Channel enhancement mod

1.95. br8n60.pdf Size:883K _blue-rocket-elect

8N60
8N60

BR8N60(BRCS8N60R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 低的门槛电压、反向传输电容小、开关速度快。 Low gate charge, Low Crss , Fast switching. 用途 / Applications 用于高效 DC/DC 转换和功率开关。 These devices are well su

1.96. brf8n60.pdf Size:781K _blue-rocket-elect

8N60
8N60

BRF8N60(BRCS8N60FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, Low Crss , Fast switching. 用途 / Applications 用于高效 DC/DC 转换和功率开关。 These devices are well suited for h

1.97. cs8n60 a8d.pdf Size:228K _crhj

8N60
8N60

Silicon N-Channel Power MOSFET R ○ CS8N60 A8D General Description: VDSS 600 V CS8N60 A8D, the silicon N-channel Enhanced ID 8 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.98. cs8n60 ard.pdf Size:215K _crhj

8N60
8N60

Silicon N-Channel Power MOSFET R ○ CS8N60 ARD General Description: VDSS 600 V CS8N60 ARD, the silicon N-channel Enhanced ID 8 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.99. cs8n60f a9h.pdf Size:352K _crhj

8N60
8N60

Silicon N-Channel Power MOSFET R ○ CS8N60F A9H General Description: VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25℃) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

1.100. cs8n60 a8h.pdf Size:347K _crhj

8N60
8N60

Silicon N-Channel Power MOSFET R ○ CS8N60 A8H General Description: VDSS 600 V CS8N60 A8H, the silicon N-channel Enhanced ID 8 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.101. cm8n60f.pdf Size:126K _jdsemi

8N60
8N60

R CM8N60F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容小

1.102. cm8n60.pdf Size:122K _jdsemi

8N60
8N60

R CM8N60 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

1.103. kx8n60cf.pdf Size:3240K _kexin

8N60
8N60

DIP Type MOSFET N-Channel MOSFET KX8N60CF Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● VDS (V) = 600V ● ID = 7.5 A (VGS = 10V) ● RDS(ON) < 1.2 Ω (VGS = 10V) D ±0.20 ● Fast switching 2.76 ● Improved dv/dt capability 1.47max ±0.20 0.50 1 2 3 G ±0.20 0.80 2.54typ S 2.54typ ■ Absolute Maximum Ratings Ta = 25℃ Parameter

1.104. kx8n60f.pdf Size:2119K _kexin

8N60
8N60

DIP Type MOSFET N-Channel MOSFET KX8N60F Unit: mm TO-220F ±0.20 ±0.20 ±0.20 2.54 ±0.20 0.70 ■ Features ● VDS (V) = 600V ● ID = 7.5 A (VGS = 10V) ● RDS(ON) < 1.2Ω (VGS = 10V) ±0.20 2.76 ● Low gate charge ● 100% avalanche tested 1.47max ±0.20 0.50 ±0.20 0.80 2.54typ 2.54typ ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

1.105. kx8n60c.pdf Size:2504K _kexin

8N60
8N60

DIP Type MOSFET N-Channel MOSFET KX8N60C TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● VDS (V) = 600V ● ID = 7.5 A (VGS = 10V) ● RDS(ON) < 1.2Ω (VGS = 10V) D ● Fast switching 1.27 ± 0.10 1.52 ± 0.10 2 1 3 ● Improved dv/dt capability 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54TYP [2.54 ± 0.20 ] [2.

1.106. sss8n60.pdf Size:1124K _shenzhen-tuofeng-semi

8N60
8N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N 沟道增强型场效应晶体管 SSS8N60 N-CHANNEL MOSFET 主要参数 MAIN CHARACTERISTICS 封装 Package 7.5 A ID 600 V VDSS Rdson 1.2 Ω (@Vgs=10V) 54 nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电

1.107. mdf8n60bth.pdf Size:835K _magnachip

8N60
8N60

MDF8N60B N-Channel MOSFET 600V, 8A, 1.05Ω Ω Ω Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip’s MOSFET Technology, which provides low on- ID = 8.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 1.05Ω @ VGS = 10V quality. Applications These devices are suitable device for SMP

1.108. mdp8n60th.pdf Size:743K _magnachip

8N60
8N60

 MDP8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description Features The MDP8N60 uses advanced MagnaChip’s MOSFET V = 600V DS Technology, which provides low on-state resistance, high V = 660V @ T DS jmax switching performance and excellent quality. I =8.0A @ V = 10V D GS RDS(ON) ≤ 1.0Ω @ VGS = 10V MDP8N60 is suitable device for SMPS, high Speed switching Applicatio

1.109. wff8n60b.pdf Size:709K _winsemi

8N60
8N60

WFF8N60B WFF8N60B WFF8N60B WFF8N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 7.5A,600V,R (Max1.2Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (V =4000V AC) ISO � Maximum Junction Temperature Range(150℃) General

1.110. wfp8n60b.pdf Size:703K _winsemi

8N60
8N60

WFP8N60B WFP8N60B WFP8N60B WFP8N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 7.5A,600V,R (Max1.2Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.111. wfp8n60.pdf Size:695K _winsemi

8N60
8N60

WFP8N60 WFP8N60 WFP8N60 WFP8N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 7.5A,600V,R (Max1.2Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usi

1.112. wff8n60.pdf Size:696K _winsemi

8N60
8N60

WFF8N60 WFF8N60 WFF8N60 WFF8N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 7.5A,600V,R (Max1.2Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (V =4000V AC) ISO � Maximum Junction Temperature Range(150℃) General Desc

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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