All MOSFET. 15N60 Datasheet

 

15N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 15N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 312 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Drain-Source Capacitance (Cd): 270 pF

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: TO-247_TO-3P_TO-220F1

15N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

15N60 Datasheet (PDF)

1.1. irfp15n60l.pdf Size:198K _upd-mosfet

15N60
15N60

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET® Power MOSFET • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 385mΩ 130ns 15A • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate c

1.2. siha15n60e.pdf Size:170K _upd-mosfet

15N60
15N60

SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 76 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 17 •

 1.3. sihb15n60e.pdf Size:199K _upd-mosfet

15N60
15N60

SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

1.4. sihp15n60e.pdf Size:207K _upd-mosfet

15N60
15N60

SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

 1.5. sihf15n60e.pdf Size:136K _upd-mosfet

15N60
15N60

SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

1.6. irfp15n60lpbf.pdf Size:147K _upd-mosfet

15N60
15N60

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) (Ω)VGS = 10 V 0.385 RoHS* • Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 • Enhanced dV/dt Capabilities Offer Improved

1.7. msf15n60.pdf Size:915K _upd-mosfet

15N60
15N60

MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • S

1.8. wff15n60.pdf Size:422K _update_mosfet

15N60
15N60

WFF15N60 WFF15N60 WFF15N60 WFF15N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 15A,600V, R (Max0.52Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 36nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

1.9. cs15n60.pdf Size:125K _update_mosfet

15N60

CS15N60 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 280 W 线性降低系数 2.3 W/℃ ID (VGS=10V,TC=25℃) 15 A 极 ID (VGS=10V,TC=100℃) 9.7 A 限 IDM 60 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.44 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 600 V RDS on) VGS=10V,ID=9A 0.46 Ω

1.10. wvm15n60.pdf Size:22K _update_mosfet

15N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

1.11. mgp15n60urev0.pdf Size:120K _motorola

15N60
15N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Product Preview MGP15N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 15 A @ 90C voltageblocking capability. It also provides fast switching char

1.12. mgp15n60u.pdf Size:125K _motorola

15N60
15N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Designer's? Data Sheet MGP15N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 15 A @ 90C voltageblocking capability. It also provides low onvolta

1.13. sgh15n60rufd.pdf Size:612K _fairchild_semi

15N60

1.14. irfp15n60l.pdf Size:163K _international_rectifier

15N60
15N60

PD - 94415 SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m? 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in si

1.15. irfp15n60lpbf.pdf Size:208K _international_rectifier

15N60
15N60

PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m? 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate char

1.16. sgp15n60ruf.pdf Size:228K _samsung

15N60
15N60

N-CHANNEL IGBT SGP15N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 6

1.17. ssh15n60 ssh15n55.pdf Size:394K _samsung

15N60
15N60

查询SSH15N55供应商 捷多邦,专业PCB打样工厂,24小时 加急出货

1.18. sgh15n60rufd.pdf Size:268K _samsung

15N60
15N60

CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.19. spp15n60c3 spi15n60c3 spa15n60c3 rev[1].3.2new.pdf Size:684K _infineon

15N60
15N60

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 ? New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111: Fully isolated pack

1.20. skp15n60 skw15n60 rev2 3g.pdf Size:371K _infineon

15N60
15N60

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, t

1.21. spw15n60c3 rev[1].2.5 pcn.pdf Size:743K _infineon

15N60
15N60

VDS Tjmax ? G G

1.22. spi15n60cfd rev1.0 b.pdf Size:559K _infineon

15N60
15N60

SPI15N60CFD C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: PG?TO262 V "MIG:B: 9v /dt G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;IHL>I8=>C< -4

1.23. ikb15n60trev2 5g.pdf Size:1222K _infineon

15N60
15N60

IKB15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TrenchStop technology fo

1.24. sgb15n60 rev2 3g.pdf Size:791K _infineon

15N60
15N60

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel swit

1.25. igb15n60trev2 4g.pdf Size:1188K _infineon

15N60
15N60

IGB15N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners TrenchStop technology for 600 V applications offers : - very tight parameter distribution - high ru

1.26. skb15n60hs rev2 3g.pdf Size:1181K _infineon

15N60
15N60

SKB15N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature

1.27. sgb15n60hs rev2 3.pdf Size:815K _infineon

15N60
15N60

SGB15N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D?-PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distribution High

1.28. spw15n60cfd rev1[1].2 pcn.pdf Size:700K _infineon

15N60
15N60

SPW15N60CFD TM C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: PG?TO247 V "MIG:B: 9v /dt G6I:9 /d V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 688DG9>C< ID '"!" ::7 "% /0=4290/ 1:< V 0D;IHL>I8=>C< -4* 0I6<:H V ) ! / 1 13 Ty

1.29. ika15n60trev2 3g.pdf Size:517K _infineon

15N60
15N60

IKA15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5?s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - hi

1.30. igp15n60trev2 2g[1].pdf Size:399K _infineon

15N60
15N60

IGP15N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distributio

1.31. sgp15n60 sgw15n60 rev2 3g.pdf Size:333K _infineon

15N60
15N60

SGP15N60 SGW15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching

1.32. skb15n60 rev2 2g.pdf Size:1150K _infineon

15N60
15N60

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight parameter dis

1.33. spa15n60cfd rev1.0.pdf Size:575K _infineon

15N60
15N60

SPA15N60CFD C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 PG?TO220FP V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;IHL>I8=>C< -

1.34. ikp15n60trev2 2g[1].pdf Size:454K _infineon

15N60
15N60

IKP15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for

1.35. spp15n60cfd rev1.3.pdf Size:537K _infineon

15N60
15N60

SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: Softswitc

1.36. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

15N60
15N60

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

1.37. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

15N60
15N60

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 15N60

1.38. 15n60.pdf Size:237K _utc

15N60
15N60

UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 TO-247 ? DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It 1 also can withstand

1.39. kgt15n60fda.pdf Size:1621K _kec

15N60
15N60

SEMICONDUCTOR KGT15N60FDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES ·High speed switching ·High system efficiency ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremely enhanced avalanch

1.40. sgp15n60.pdf Size:331K _igbt

15N60
15N60

 SGP15N60 SGW15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

1.41. skw15n60.pdf Size:369K _igbt

15N60
15N60

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high

1.42. sgb15n60hs.pdf Size:813K _igbt

15N60
15N60

SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D²-PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

1.43. sgw15n60.pdf Size:331K _igbt

15N60
15N60

 SGP15N60 SGW15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

1.44. skb15n60hs.pdf Size:1176K _igbt

15N60
15N60

SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedne

1.45. ngtg15n60s1.pdf Size:168K _igbt

15N60
15N60

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

1.46. sgb15n60.pdf Size:788K _igbt

15N60
15N60

 SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

1.47. ngtb15n60s1.pdf Size:177K _igbt

15N60
15N60

NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

1.48. sgh15n60rufd.pdf Size:649K _igbt

15N60
15N60

March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =

1.49. skb15n60.pdf Size:599K _igbt

15N60
15N60

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  NPT-Technology for 600V applications offers: - very

1.50. skp15n60.pdf Size:369K _igbt

15N60
15N60

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high

1.51. ngtb15n60eg.pdf Size:176K _igbt

15N60
15N60

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.co

1.52. ika15n60t.pdf Size:565K _igbt_a

15N60
15N60

IKA15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight par

1.53. kgt15n60fda.pdf Size:1619K _igbt_a

15N60
15N60

SEMICONDUCTOR KGT15N60FDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES ·High speed switching ·High system efficiency ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremely enhanced avalanch

1.54. ikp15n60t.pdf Size:572K _igbt_a

15N60
15N60

IKP15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Designed for : E - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™

1.55. ikd15n60ra.pdf Size:2331K _igbt_a

15N60
15N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD15N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 6

1.56. kgf15n60fda.pdf Size:1547K _igbt_a

15N60
15N60

SEMICONDUCTOR KGF15N60FDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremel

1.57. bt15n60a9f.pdf Size:102K _igbt_a

15N60
15N60

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

1.58. ikd15n60rf.pdf Size:1874K _igbt_a

15N60
15N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD15N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica

1.59. iku15n60r.pdf Size:1797K _igbt_a

15N60
15N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R, IKU15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD15N60R, IKU15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

1.60. ikd15n60r.pdf Size:1797K _igbt_a

15N60
15N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R, IKU15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD15N60R, IKU15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

1.61. igb15n60t.pdf Size:676K _igbt_a

15N60
15N60

IGB15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C G E Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  TRENCHSTOP™ technology for 600V applications offers : - very t

1.62. ikb15n60t.pdf Size:692K _igbt_a

15N60
15N60

IKB15N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175 °C  Short circuit withstand time – 5s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  Tr

1.63. igp15n60t.pdf Size:540K _igbt_a

15N60
15N60

IGP15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight

1.64. sdf15n60.pdf Size:165K _solitron

15N60



1.65. bt15n60a9f.pdf Size:102K _crhj

15N60
15N60

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

1.66. mdp15n60gth.pdf Size:1198K _magnachip

15N60
15N60

 MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω General Description Features These N-channel MOSFET are produced using advanced  V = 600V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 15A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 0.40Ω @ V = 10V DS(ON) GS quality. Applications These devices are sui

1.67. mdf15n60gth.pdf Size:1198K _magnachip

15N60
15N60

 MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω General Description Features These N-channel MOSFET are produced using advanced  V = 600V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 15A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 0.40Ω @ V = 10V DS(ON) GS quality. Applications These devices are sui

1.68. msf15n60.pdf Size:915K _bruckewell

15N60
15N60

MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • S

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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