Справочник MOSFET. 15N60

 

15N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 15N60
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 312 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 15 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 200 ns
   Выходная емкость (Cd): 270 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.5 Ohm
   Тип корпуса: TO-247 TO-3P TO-220F1

 Аналог (замена) для 15N60

 

 

15N60 Datasheet (PDF)

 ..1. Size:237K  utc
15n60.pdf

15N60
15N60

UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1TO-247 DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It1also can with

 ..2. Size:220K  inchange semiconductor
15n60.pdf

15N60
15N60

isc N-Channel MOSFET Transistor 15N60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.44(Max)DS(on)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 0.1. Size:190K  1
sgl15n60rufd.pdf

15N60
15N60

 0.2. Size:1109K  1
xnf15n60t.pdf

15N60
15N60

Data Sheet XNF15N60T 600V/15A IGBT /PRODUCT FEATURES 2 + Advanced Trench+FS IGBT technology 1 Low Collector-Emitter Saturation voltage 3 With anti-parallel fast recovery diode TJ = 175 C Maximum junction temperature: TJ

 0.3. Size:125K  motorola
mgp15n60u.pdf

15N60
15N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DDesigner's Data SheetMGP15N60UInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insula

 0.4. Size:120K  motorola
mgp15n60urev0.pdf

15N60
15N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DProduct PreviewMGP15N60UInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insulated Gat

 0.5. Size:208K  international rectifier
irfp15n60lpbf.pdf

15N60
15N60

PD - 95517SMPS MOSFETIRFP15N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 0.6. Size:198K  international rectifier
irfp15n60l.pdf

15N60
15N60

PD - 94415ASMPS MOSFETIRFP15N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate c

 0.7. Size:496K  st
stf15n60m2-ep stfi15n60m2-ep.pdf

15N60
15N60

STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and IPAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching

 0.8. Size:649K  fairchild semi
sgh15n60rufd.pdf

15N60
15N60

March 2000 IGBTSGH15N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =

 0.9. Size:268K  samsung
sgh15n60rufd.pdf

15N60
15N60

CO-PAK IGBT SGH15N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

 0.10. Size:394K  samsung
ssh15n60 ssh15n55.pdf

15N60
15N60

SSH15N55 PCB24

 0.11. Size:228K  samsung
sgp15n60ruf.pdf

15N60
15N60

N-CHANNEL IGBT SGP15N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE

 0.12. Size:170K  vishay
siha15n60e.pdf

15N60
15N60

SiHA15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 76 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 17

 0.13. Size:207K  vishay
sihp15n60e.pdf

15N60
15N60

SiHP15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced Switching and Conduction LossesQg max. (nC) 76 Ultra Low Gate Charge (Qg)Qgs (nC) 11 Avalanche Energy Rated (UIS)Qgd (nC) 17

 0.14. Size:147K  vishay
irfp15n60lpbf.pdf

15N60
15N60

IRFP15N60L, SiHFP15N60LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS* Lower Gate Charge Results in Simple DriveQg (Max.) (nC) 100COMPLIANTRequirementsQgs (nC) 30Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved

 0.15. Size:199K  vishay
sihb15n60e.pdf

15N60
15N60

SiHB15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced Switching and Conduction LossesQg max. (nC) 76 Ultra Low Gate Charge (Qg)Qgs (nC) 11 Avalanche Energy Rated (UIS)Qgd (nC) 17

 0.16. Size:136K  vishay
sihf15n60e.pdf

15N60
15N60

SiHF15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced Switching and Conduction LossesQg max. (nC) 76 Ultra Low Gate Charge (Qg)Qgs (nC) 11 Avalanche Energy Rated (UIS)Qgd (nC) 17

 0.17. Size:788K  infineon
sgb15n60.pdf

15N60
15N60

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 0.18. Size:682K  infineon
igb15n60t.pdf

15N60
15N60

IGB15N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology CGEFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TRENCHSTOP technology for 600V applications offers

 0.19. Size:512K  infineon
ikp15n60t.pdf

15N60
15N60

IKP15N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply

 0.20. Size:331K  infineon
sgw15n60.pdf

15N60
15N60

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 0.21. Size:1797K  infineon
iku15n60r.pdf

15N60
15N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60R, IKU15N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsDatasheetIndustrial & MultimarketIKD15N60R, IKU15N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (R

 0.22. Size:331K  infineon
sgp15n60.pdf

15N60
15N60

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 0.23. Size:698K  infineon
ikb15n60t.pdf

15N60
15N60

IKB15N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for frequency inverters for washing machines, fans, pumps and vacuum

 0.24. Size:700K  infineon
spp15n60c3 spi15n60c3 spa15n60c3.pdf

15N60
15N60

SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 0.25. Size:399K  infineon
igp15n60trev2 2g.pdf

15N60
15N60

IGP15N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : - very tight p

 0.26. Size:537K  infineon
spp15n60cfd.pdf

15N60
15N60

SPP15N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.330 DS(on),max Extremely low reverse recovery chargeI 13.4 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed fo

 0.27. Size:509K  infineon
ika15n60t.pdf

15N60
15N60

IKA15N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E TRENCHSTOP and Fieldstop technology for 600V applications offers : - ve

 0.28. Size:813K  infineon
sgb15n60hs.pdf

15N60
15N60

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 0.29. Size:369K  infineon
skp15n60.pdf

15N60
15N60

SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high

 0.30. Size:369K  infineon
skw15n60.pdf

15N60
15N60

SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high

 0.31. Size:1222K  infineon
ikb15n60trev2 5g.pdf

15N60
15N60

IKB15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners Trench

 0.32. Size:700K  infineon
spw15n60cfd.pdf

15N60
15N60

SPW15N60CFDTMCIMOSTM #:A0D9:R 0. 0 DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 688DG9>CC

 0.33. Size:371K  infineon
skp15n60 skw15n60.pdf

15N60
15N60

SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high

 0.34. Size:342K  infineon
spa15n60cfd.pdf

15N60
15N60

SPA15N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.330DS(on),max Extremely low reverse recovery chargeI 13.4 AD Ultra low gate charge Extreme dv /dt rated PG-TO220FP High peak current capability Qualified according to JEDEC1) for target applicationsCoolMOS CFD designed for:

 0.35. Size:599K  infineon
skb15n60.pdf

15N60
15N60

SKB15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sGE Designed for frequency inverters for washing machines,fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers:- very

 0.36. Size:1188K  infineon
igb15n60trev2 4g.pdf

15N60
15N60

IGB15N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for frequency inverters for washing machines, fans, Epumps and vacuum cleaners TrenchStop technology for 600 V applications offers : - very tight parameter distr

 0.37. Size:517K  infineon
ika15n60trev2 3g.pdf

15N60
15N60

IKA15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter di

 0.38. Size:1428K  infineon
ikd15n60rc2.pdf

15N60
15N60

IKD15N60RC2TRENCHSTOPTM RC-Series for hard switching applicationsCost effective monolithically integrated IGBT with DiodeCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Very tight parameter distribution Operating range up to 20kHzG Maximum junction temperature 175CE Short circuit capability of 3s Humidity robus

 0.39. Size:815K  infineon
sgb15n60hs .pdf

15N60
15N60

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 0.40. Size:1868K  infineon
ikd15n60rf.pdf

15N60
15N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD15N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica

 0.41. Size:2331K  infineon
ikd15n60ra.pdf

15N60
15N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60RA600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD15N60RATRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 6

 0.42. Size:333K  infineon
sgp15n60 sgw15n60g.pdf

15N60
15N60

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 0.43. Size:1926K  infineon
aihd15n60r.pdf

15N60
15N60

AIHD15N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution

 0.44. Size:1176K  infineon
skb15n60hs.pdf

15N60
15N60

SKB15N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne

 0.45. Size:684K  infineon
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf

15N60
15N60

SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 0.46. Size:743K  infineon
spw15n60c3.pdf

15N60
15N60

VDS Tjmax G G

 0.47. Size:454K  infineon
ikp15n60trev2 2g.pdf

15N60
15N60

IKP15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fiel

 0.48. Size:1808K  infineon
ikd15n60r.pdf

15N60
15N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD15N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600

 0.49. Size:791K  infineon
sgb15n60g.pdf

15N60
15N60

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 0.50. Size:1181K  infineon
skb15n60hsg.pdf

15N60
15N60

SKB15N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne

 0.51. Size:1150K  infineon
skb15n60g.pdf

15N60
15N60

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

 0.52. Size:1750K  infineon
aihd15n60rf.pdf

15N60
15N60

AIHD15N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimized Eon, Eoff and Qrr for low switching lossesG Operating range of 4 to 30kHzE Smooth switching performance leading to low EMI levels Very tight paramet

 0.53. Size:559K  infineon
spi15n60cfd b.pdf

15N60
15N60

SPI15N60CFDCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesV 1?B6M 650 V!0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:R 0. 0 DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 for industrial grade applications 688DG9>C53:10 2;=V 0D;IHL>I8

 0.54. Size:497K  infineon
igp15n60t.pdf

15N60
15N60

IGP15N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :

 0.55. Size:316K  ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf

15N60
15N60

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

 0.56. Size:82K  ixys
ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf

15N60
15N60

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

 0.57. Size:168K  onsemi
ngtg15n60s1.pdf

15N60
15N60

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 0.58. Size:176K  onsemi
ngtb15n60eg.pdf

15N60
15N60

NGTB15N60EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.co

 0.59. Size:440K  onsemi
fgpf15n60undf.pdf

15N60
15N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.60. Size:613K  onsemi
sgh15n60rufd.pdf

15N60
15N60

IGBTSGH15N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15Aseries is designed f

 0.61. Size:132K  onsemi
ngtb15n60s1eg.pdf

15N60
15N60

NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

 0.62. Size:378K  onsemi
fgp15n60undf.pdf

15N60
15N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.63. Size:177K  onsemi
ngtb15n60s1.pdf

15N60
15N60

NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 0.64. Size:124K  onsemi
ngtg15n60s1eg.pdf

15N60
15N60

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

 0.65. Size:1547K  kec
kgf15n60fda.pdf

15N60
15N60

SEMICONDUCTORKGF15N60FDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powerFEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 5us(@TC=100)Extremel

 0.66. Size:1619K  kec
kgt15n60fda.pdf

15N60
15N60

SEMICONDUCTORKGT15N60FDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness as well as short circuit ruggedness.It is designed for hard switching applications.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 5us(@TC=100)Extremely enhanced avalanch

 0.67. Size:2166K  jilin sino
jcs15n60ch jcs15n60fh jcs15n60bh jcs15n60sh.pdf

15N60
15N60

N RN-CHANNEL MOSFET JCS15N60H Package MAIN CHARACTERISTICS ID 15 A VDSS 600 V 0.52 (MAX) Rdson-maxVgs=10V 0.45 (TYP) Qg 35.7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based o

 0.68. Size:165K  solitron
sdf15n60.pdf

15N60

 0.69. Size:102K  crhj
bt15n60a9f.pdf

15N60
15N60

Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff

 0.70. Size:125K  china
cs15n60.pdf

15N60

CS15N60 N PD TC=25 280 W 2.3 W/ ID VGS=10V,TC=25 15 A ID VGS=10V,TC=100 9.7 A IDM 60 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.44 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=9A 0.46

 0.71. Size:1198K  magnachip
mdf15n60gth mdp15n60gth.pdf

15N60
15N60

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui

 0.72. Size:915K  bruckewell
msf15n60.pdf

15N60
15N60

MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance S

 0.73. Size:366K  bruckewell
ms15n60.pdf

15N60
15N60

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 0.74. Size:430K  bruckewell
msb15n60.pdf

15N60
15N60

Preliminary_MSB15N60 N-Channel Enhancement Mode Power MOSFET Description The MSB15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features Low On Resista

 0.75. Size:422K  winsemi
wff15n60.pdf

15N60
15N60

WFF15N60WFF15N60WFF15N60WFF15N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 15A,600V, R (Max0.52)@V =10VDS(on) GS Ultra-low Gate charge(Typical 36nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

 0.76. Size:625K  feihonltd
fhp15n60a fhf15n60a.pdf

15N60
15N60

N N-CHANNEL MOSFET FHP15N60A /FHF15N60A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 600V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ@Vgs=10V 0.41 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv

 0.77. Size:22K  shaanxi
wvm15n60.pdf

15N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

 0.78. Size:874K  trinnotech
tgpf15n60fdr.pdf

15N60
15N60

TGPF15N60FDRField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s 175 Operating Temperature RoHS Compliant JEDEC QualificationApplicationsMotor Drive, Air Conditioner, Inverter, SolarDevic

 0.79. Size:666K  way-on
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf

15N60
15N60

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

 0.80. Size:102K  wuxi china
bt15n60a9f.pdf

15N60
15N60

Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff

 0.81. Size:460K  cn yangzhou yangjie elec
dgf15n60ctl.pdf

15N60
15N60

RoHS DGF15N60CTL COMPLIANT IGBT Discrete V 600 V CEI 15 A CV I = A 1.65 V CE(SAT) C 15 Applications Soft switchingapplications Circuit Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness,

 0.82. Size:461K  cn yangzhou yangjie elec
dgf15n60ctl0.pdf

15N60
15N60

RoHS DGF15N60CTL0 COMPLIANT IGBT Discrete V 600 V CEI 15 A CV I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switching applications Air conditioning Motor drive inverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness

 0.83. Size:447K  cn yangzhou yangjie elec
dgp15n60ctl.pdf

15N60
15N60

RoHS DGP15N60CTL COMPLIANT IGBT Discrete V 600 V CEI 15 A CV I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, t

 0.84. Size:989K  cn hmsemi
hms15n60 hms15n60f hms15n60d.pdf

15N60
15N60

HM 15N60D, HM 15N60, HM 15N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and

 0.85. Size:2018K  cn hmsemi
hmg15n60 hmg15n60d hmg15n60f.pdf

15N60
15N60

HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching

 0.86. Size:1023K  cn hmsemi
hms15n60a.pdf

15N60
15N60

HMS15N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 0.87. Size:247K  inchange semiconductor
spp15n60cfd.pdf

15N60
15N60

isc N-Channel MOSFET Transistor SPP15N60CFDISPP15N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.33Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 0.88. Size:205K  inchange semiconductor
spp15n60c3.pdf

15N60
15N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPP15N60C3FEATURESUltra low effective capacitancesLow gate chargeImproved transconductanceLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 0.89. Size:245K  inchange semiconductor
spa15n60c3.pdf

15N60
15N60

isc N-Channel MOSFET Transistor SPA15N60C3FEATURES Drain-source on-resistance:RDS(on) 0.28@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V

 0.90. Size:243K  inchange semiconductor
spw15n60cfd.pdf

15N60
15N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW15N60CFDISPW15N60CFDFEATURESStatic drain-source on-resistance:RDS(on)330mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 0.91. Size:201K  inchange semiconductor
spa15n60cfd.pdf

15N60
15N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA15N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 0.92. Size:244K  inchange semiconductor
spw15n60c3.pdf

15N60
15N60

isc N-Channel MOSFET Transistor SPW15N60C3ISPW15N60C3FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6

 0.93. Size:233K  inchange semiconductor
irfp15n60l.pdf

15N60
15N60

isc N-Channel MOSFET Transistor IRFP15N60LDESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =0.46(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPSMotor contro

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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