15N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 312 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 200 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO-247 TO-3P TO-220F1
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15N60 datasheet
15n60.pdf
UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 TO-247 DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It 1 also can with
15n60.pdf
isc N-Channel MOSFET Transistor 15N60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.44 (Max) DS(on) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
xnf15n60t.pdf
Data Sheet XNF15N60T 600V/15A IGBT /PRODUCT FEATURES 2 + Advanced Trench+FS IGBT technology 1 Low Collector-Emitter Saturation voltage 3 With anti-parallel fast recovery diode TJ = 175 C Maximum junction temperature TJ
mgp15n60u.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Designer's Data Sheet MGP15N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 15 A @ 90 C voltage blocking capability. It also provide
mgp15n60urev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Product Preview MGP15N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 15 A @ 90 C voltage blocking capability. It also provides fast sw
irfp15n60lpbf.pdf
PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.
irfp15n60l.pdf
PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c
stf15n60m2-ep stfi15n60m2-ep.pdf
STF15N60M2-EP, STFI15N60M2-EP N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in TO-220FP and I PAKFP packages Datasheet - production data Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications TO-220FP I2PAKFP (TO-281) Switching
sgh15n60rufd.pdf
March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @ IC =
sgh15n60rufd.pdf
CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS
sgp15n60ruf.pdf
N-CHANNEL IGBT SGP15N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCE
siha15n60e.pdf
SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Qg max. (nC) 76 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 17
sihp15n60e.pdf
SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17
irfp15n60lpbf.pdf
IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved
sihb15n60e.pdf
SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17
sihf15n60e.pdf
SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17
sgb15n60.pdf
SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
igb15n60t.pdf
IGB15N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology C G E Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TRENCHSTOP technology for 600V applications offers
ikp15n60t.pdf
IKP15N60T TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply
sgw15n60.pdf
SGP15N60 SGW15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
iku15n60r.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R, IKU15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD15N60R, IKU15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R
sgp15n60.pdf
SGP15N60 SGW15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
ikb15n60t.pdf
IKB15N60T TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for frequency inverters for washing machines, fans, pumps and vacuum
spp15n60c3 spi15n60c3 spa15n60c3.pdf
SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
igp15n60trev2 2g.pdf
IGP15N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers - very tight p
spp15n60cfd.pdf
SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed fo
ika15n60t.pdf
IKA15N60T TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E TRENCHSTOP and Fieldstop technology for 600V applications offers - ve
sgb15n60hs.pdf
SGB15N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-263-3-2 (D -PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
skp15n60.pdf
SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high
skw15n60.pdf
SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high
ikb15n60trev2 5g.pdf
IKB15N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners Trench
spw15n60cfd.pdf
SPW15N60CFD TM C IMOSTM # A0D9 R 0. 0 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 688DG9>CC
skp15n60 skw15n60.pdf
SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high
spa15n60cfd.pdf
SPA15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220FP High peak current capability Qualified according to JEDEC1) for target applications CoolMOS CFD designed for
skb15n60.pdf
SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very
igb15n60trev2 4g.pdf
IGB15N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners TrenchStop technology for 600 V applications offers - very tight parameter distr
ika15n60trev2 3g.pdf
IKA15N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter di
ikd15n60rc2.pdf
IKD15N60RC2 TRENCHSTOPTM RC-Series for hard switching applications Cost effective monolithically integrated IGBT with Diode C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Very tight parameter distribution Operating range up to 20kHz G Maximum junction temperature 175 C E Short circuit capability of 3 s Humidity robus
sgb15n60hs .pdf
SGB15N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-263-3-2 (D -PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
ikd15n60rf.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD15N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica
ikd15n60ra.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD15N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 6
sgp15n60 sgw15n60g.pdf
SGP15N60 SGW15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
aihd15n60r.pdf
AIHD15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised V and V for low conduction losses CEsat F G Smooth switching performance leading to low EMI levels E Very tight parameter distribution
skb15n60hs.pdf
SKB15N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf
SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
ikp15n60trev2 2g.pdf
IKP15N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fiel
ikd15n60r.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600
sgb15n60g.pdf
SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
skb15n60hsg.pdf
SKB15N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne
skb15n60g.pdf
SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight
aihd15n60rf.pdf
AIHD15N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimized Eon, Eoff and Qrr for low switching losses G Operating range of 4 to 30kHz E Smooth switching performance leading to low EMI levels Very tight paramet
spi15n60cfd b.pdf
SPI15N60CFD C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G 8DK GN 7D9N 9>D9 R 0. 0 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 for industrial grade applications 688DG9>C53 10 2;= V 0D;IHL>I8
igp15n60t.pdf
IGP15N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Designed for - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine
ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2
ngtg15n60s1.pdf
NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http //onsemi.
ngtb15n60eg.pdf
NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http //onsemi.co
fgpf15n60undf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
sgh15n60rufd.pdf
IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 15A series is designed f
ngtb15n60s1eg.pdf
NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com
fgp15n60undf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ngtb15n60s1.pdf
NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http //onsemi.
ngtg15n60s1eg.pdf
NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com
kgf15n60fda.pdf
SEMICONDUCTOR KGF15N60FDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 5us(@TC=100 ) Extremel
kgt15n60fda.pdf
SEMICONDUCTOR KGT15N60FDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 5us(@TC=100 ) Extremely enhanced avalanch
jcs15n60ch jcs15n60fh jcs15n60bh jcs15n60sh.pdf
N R N-CHANNEL MOSFET JCS15N60H Package MAIN CHARACTERISTICS ID 15 A VDSS 600 V 0.52 (MAX) Rdson-max Vgs=10V 0.45 (TYP) Qg 35.7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based o
mp15n60eif mp15n60eib mp15n60eis mp15n60eic.pdf
N R N-CHANNEL MOSFET MP15N60EI Package MAIN CHARACTERISTICS ID 15A VDSS 600V Rdson-max 0.48 Vgs=10V Qg-Typ 53.73nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
bt15n60a9f.pdf
Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff
cs15n60.pdf
CS15N60 N PD TC=25 280 W 2.3 W/ ID VGS=10V,TC=25 15 A ID VGS=10V,TC=100 9.7 A IDM 60 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.44 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=9A 0.46
mdf15n60gth mdp15n60gth.pdf
MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 15A @ V = 10V D GS state resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GS quality. Applications These devices are sui
msf15n60.pdf
MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance S
ms15n60.pdf
MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl
msb15n60.pdf
Preliminary_MSB15N60 N-Channel Enhancement Mode Power MOSFET Description The MSB15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features Low On Resista
wff15n60.pdf
WFF15N60 WFF15N60 WFF15N60 WFF15N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 15A,600V, R (Max0.52 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 36nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produce
fhp15n60a fhf15n60a.pdf
N N-CHANNEL MOSFET FHP15N60A /FHF15N60A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 600V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ @Vgs=10V 0.41 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv
ncep015n60ll.pdf
NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati
wvm15n60.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source co
tgpf15n60fdr.pdf
TGPF15N60FDR Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Motor Drive, Air Conditioner, Inverter, Solar Devic
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf
WML1 MM15N60C 15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
bt15n60a9f.pdf
Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff
dgf15n60ctl.pdf
RoHS DGF15N60CTL COMPLIANT IGBT Discrete V 600 V CE I 15 A C V I = A 1.65 V CE(SAT) C 15 Applications Soft switchingapplications Circuit Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness,
dgf15n60ctl0.pdf
RoHS DGF15N60CTL0 COMPLIANT IGBT Discrete V 600 V CE I 15 A C V I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switching applications Air conditioning Motor drive inverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness
dgp15n60ctl.pdf
RoHS DGP15N60CTL COMPLIANT IGBT Discrete V 600 V CE I 15 A C V I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, t
hms15n60 hms15n60f hms15n60d.pdf
HM 15N60D, HM 15N60, HM 15N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and
hms15n60a.pdf
HMS15N60A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl
spp15n60cfd.pdf
isc N-Channel MOSFET Transistor SPP15N60CFD ISPP15N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.33 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
spp15n60c3.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPP15N60C3 FEATURES Ultra low effective capacitances Low gate charge Improved transconductance Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
spa15n60c3.pdf
isc N-Channel MOSFET Transistor SPA15N60C3 FEATURES Drain-source on-resistance RDS(on) 0.28 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V
spw15n60cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW15N60CFD ISPW15N60CFD FEATURES Static drain-source on-resistance RDS(on) 330m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
spa15n60cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA15N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
spw15n60c3.pdf
isc N-Channel MOSFET Transistor SPW15N60C3 ISPW15N60C3 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6
irfp15n60l.pdf
isc N-Channel MOSFET Transistor IRFP15N60L DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R =0.46 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS Motor contro
Otros transistores... 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , 10N60K , 12N60 , AO4407A , 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A , 1N60 , 1N60P .
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