15N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 312 W
Tensión drenaje-fuente |Vds|: 600 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 200 nS
Conductancia de drenaje-sustrato (Cd): 270 pF
Resistencia drenaje-fuente RDS(on): 0.5 Ohm
Empaquetado / Estuche: TO-247 TO-3P TO-220F1
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15N60 Datasheet (PDF)
0.1. mgp15n60urev0.pdf 
Size:120K _motorola
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DProduct PreviewMGP15N60UInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insulated Gat
0.2. mgp15n60u.pdf Size:125K _motorola
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DDesigner's Data SheetMGP15N60UInsulated Gate Bipolar TransistorN Channel Enhancement Mode Silicon GateThis Insula
0.3. sgh15n60rufd.pdf Size:649K _fairchild_semi
March 2000 IGBTSGH15N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =
0.4. irfp15n60l.pdf Size:198K _international_rectifier
PD - 94415ASMPS MOSFETIRFP15N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate c
0.5. irfp15n60lpbf.pdf Size:208K _international_rectifier
PD - 95517SMPS MOSFETIRFP15N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.
0.6. sgh15n60rufd.pdf Size:268K _samsung
CO-PAK IGBT SGH15N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS
0.7. sgp15n60ruf.pdf Size:228K _samsung
N-CHANNEL IGBT SGP15N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE
0.8. ssh15n60 ssh15n55.pdf Size:394K _samsung
SSH15N55 PCB24
0.9. siha15n60e.pdf Size:170K _vishay
SiHA15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 76 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 17
0.10. irfp15n60lpbf.pdf Size:147K _vishay
IRFP15N60L, SiHFP15N60LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS* Lower Gate Charge Results in Simple DriveQg (Max.) (nC) 100COMPLIANTRequirementsQgs (nC) 30Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved
0.11. sihp15n60e.pdf Size:207K _vishay
SiHP15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced Switching and Conduction LossesQg max. (nC) 76 Ultra Low Gate Charge (Qg)Qgs (nC) 11 Avalanche Energy Rated (UIS)Qgd (nC) 17
0.12. sihf15n60e.pdf Size:136K _vishay
SiHF15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced Switching and Conduction LossesQg max. (nC) 76 Ultra Low Gate Charge (Qg)Qgs (nC) 11 Avalanche Energy Rated (UIS)Qgd (nC) 17
0.13. sihb15n60e.pdf Size:199K _vishay
SiHB15N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced Switching and Conduction LossesQg max. (nC) 76 Ultra Low Gate Charge (Qg)Qgs (nC) 11 Avalanche Energy Rated (UIS)Qgd (nC) 17
0.14. skb15n60hsg.pdf Size:1181K _infineon
SKB15N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne
0.15. igp15n60trev2 2g.pdf Size:399K _infineon
IGP15N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : - very tight p
0.16. spw15n60cfd.pdf Size:700K _infineon
SPW15N60CFDTMCIMOSTM #:A0D9:R 0. 0 DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 688DG9>CC
0.17. spw15n60c3.pdf Size:743K _infineon
VDS Tjmax G G
0.18. sgw15n60.pdf Size:331K _infineon
SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
0.19. sgp15n60 sgw15n60g.pdf Size:333K _infineon
SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
0.20. skw15n60.pdf Size:369K _infineon
SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high
0.21. ikd15n60rf.pdf Size:1874K _infineon
IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD15N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica
0.22. sgb15n60hs .pdf Size:815K _infineon
SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
0.23. ika15n60t.pdf Size:565K _infineon
IKA15N60TTRENCHSTOP Series qLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175CG Short circuit withstand time 5sE TRENCHSTOP and Fieldstop technology for 600V applications offers :- very tight par
0.24. ikd15n60ra.pdf Size:2331K _infineon
IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60RA600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD15N60RATRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 6
0.25. skb15n60hs.pdf Size:1176K _infineon
SKB15N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne
0.26. skp15n60.pdf Size:369K _infineon
SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high
0.27. spi15n60cfd b.pdf Size:559K _infineon
SPI15N60CFDCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesV 1?B6M 650 V!0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:R 0. 0 DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 for industrial grade applications 688DG9>C53:10 2;=V 0D;IHL>I8
0.28. ikp15n60trev2 2g.pdf Size:454K _infineon
IKP15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fiel
0.29. ikd15n60r.pdf Size:1797K _infineon
IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60R, IKU15N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsDatasheetIndustrial & MultimarketIKD15N60R, IKU15N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (R
0.30. iku15n60r.pdf Size:1797K _infineon
IGBTIGBT with integrated diode in packages offering space saving advantageIKD15N60R, IKU15N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsDatasheetIndustrial & MultimarketIKD15N60R, IKU15N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (R
0.31. igb15n60trev2 4g.pdf Size:1188K _infineon
IGB15N60T TrenchStop Series q Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for frequency inverters for washing machines, fans, Epumps and vacuum cleaners TrenchStop technology for 600 V applications offers : - very tight parameter distr
0.32. spa15n60cfd.pdf Size:575K _infineon
SPA15N60CFDCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesV 1?B6M 650 V!0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:R 0. 0 DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 for industrial grade applications 688DG9>C53:10 2;=V 0D;IHL>I
0.33. ika15n60trev2 3g.pdf Size:517K _infineon
IKA15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter di
0.34. skb15n60.pdf Size:599K _infineon
SKB15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sGE Designed for frequency inverters for washing machines,fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers:- very
0.35. ikb15n60t.pdf Size:692K _infineon
IKB15N60TTrenchStop Series qLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled 3 diodeC Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5sGE Designed for frequency inverters for washing machines, fans,pumps and vacuum cleaners Tr
0.36. sgp15n60.pdf Size:331K _infineon
SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
0.37. spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf Size:684K _infineon
SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
0.38. ikb15n60trev2 5g.pdf Size:1222K _infineon
IKB15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners Trench
0.39. igp15n60t.pdf Size:540K _infineon
IGP15N60TTRENCHSTOP Series qLow Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technologyCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175CG Short circuit withstand time 5sE Designed for :- Frequency Converters- Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :- very tight
0.40. igb15n60t.pdf Size:676K _infineon
IGB15N60TTRENCHSTOP Series qLow Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technologyCGEFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuumcleaners TRENCHSTOP technology for 600V applications offers :- very t
0.41. sgb15n60.pdf Size:788K _infineon
SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
0.42. ikp15n60t.pdf Size:572K _infineon
IKP15N60TTRENCHSTOP Series qLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5sG Designed for : E- Frequency Converters- Uninterrupted Power Supply TRENCHSTOP
0.43. sgb15n60hs.pdf Size:813K _infineon
SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri
0.44. skp15n60 skw15n60.pdf Size:371K _infineon
SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high
0.45. skb15n60g.pdf Size:1150K _infineon
SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
0.46. spp15n60cfd.pdf Size:537K _infineon
SPP15N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.330 DS(on),max Extremely low reverse recovery chargeI 13.4 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed fo
0.47. sgb15n60g.pdf Size:791K _infineon
SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
0.48. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine
0.49. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2
0.50. ngtb15n60eg.pdf Size:176K _onsemi
NGTB15N60EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.co
0.51. ngtg15n60s1.pdf Size:168K _onsemi
NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.
0.52. ngtb15n60s1.pdf Size:177K _onsemi
NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.
0.53. 15n60.pdf Size:237K _utc
UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1TO-247 DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It1also can with
0.54. kgt15n60fda.pdf Size:1619K _kec
SEMICONDUCTORKGT15N60FDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness as well as short circuit ruggedness.It is designed for hard switching applications.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 5us(@TC=100)Extremely enhanced avalanch
0.55. kgf15n60fda.pdf Size:1547K _kec
SEMICONDUCTORKGF15N60FDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powerFEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 5us(@TC=100)Extremel
0.56. sdf15n60.pdf Size:165K _solitron
0.57. bt15n60a9f.pdf Size:102K _crhj
Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff
0.58. cs15n60.pdf Size:125K _china
CS15N60 N PD TC=25 280 W 2.3 W/ ID VGS=10V,TC=25 15 A ID VGS=10V,TC=100 9.7 A IDM 60 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.44 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=9A 0.46
0.59. mdf15n60gth mdp15n60gth.pdf Size:1198K _magnachip
MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui
0.60. ms15n60.pdf Size:366K _bruckewell
MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl
0.61. msb15n60.pdf Size:430K _bruckewell
Preliminary_MSB15N60 N-Channel Enhancement Mode Power MOSFET Description The MSB15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features Low On Resista
0.62. msf15n60.pdf Size:915K _bruckewell
MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance S
0.63. wff15n60.pdf Size:422K _winsemi
WFF15N60WFF15N60WFF15N60WFF15N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 15A,600V, R (Max0.52)@V =10VDS(on) GS Ultra-low Gate charge(Typical 36nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce
0.64. fhp15n60a fhf15n60a.pdf Size:625K _feihonltd
N N-CHANNEL MOSFET FHP15N60A /FHF15N60A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 600V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ@Vgs=10V 0.41 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv
0.65. wvm15n60.pdf Size:22K _shaanxi
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co
0.66. bt15n60a9f.pdf Size:102K _wuxi_china
Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff
0.67. spw15n60cfd.pdf Size:243K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW15N60CFDISPW15N60CFDFEATURESStatic drain-source on-resistance:RDS(on)330mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
0.68. irfp15n60l.pdf Size:233K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP15N60LDESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =0.46(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPSMotor contro
0.69. spp15n60c3.pdf Size:205K _inchange_semiconductor
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPP15N60C3FEATURESUltra low effective capacitancesLow gate chargeImproved transconductanceLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
0.70. spw15n60c3.pdf Size:244K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPW15N60C3ISPW15N60C3FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6
0.71. spa15n60cfd.pdf Size:201K _inchange_semiconductor
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA15N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
0.72. 15n60.pdf Size:220K _inchange_semiconductor
isc N-Channel MOSFET Transistor 15N60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.44(Max)DS(on)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
0.73. spa15n60c3.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPA15N60C3FEATURES Drain-source on-resistance:RDS(on) 0.28@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V
0.74. spp15n60cfd.pdf Size:247K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPP15N60CFDISPP15N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.33Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
