1N60Z PDF Specs and Replacement
Type Designator: 1N60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
Package: TO-252 TO-92
1N60Z substitution
1N60Z PDF Specs
1n60z.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s... See More ⇒
nddl01n60z.pdf
NDDL01N60Z, NDTL01N60Z N-Channel Power MOSFET 600 V, 15 W Features 100% Avalanche Tested Gate Charge Minimized http //onsemi.com Zener-protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX Compliant 600 V 15 W @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD NDT Unit N-Channel MOSFET Dr... See More ⇒
Detailed specifications: 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A , 1N60 , 1N60P , 20N60 , 2N60L , 2N60 , 2N60K , 3N60 , 3N60A , 3N60Z , 3N60K , 4N60 .
Keywords - 1N60Z MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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