All MOSFET. 1N60Z Datasheet

 

1N60Z Datasheet and Replacement


   Type Designator: 1N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
   Package: TO-252 TO-92
 

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1N60Z Datasheet (PDF)

 ..1. Size:244K  utc
 1n60z.pdf pdf_icon

1N60Z

UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s

 0.1. Size:120K  onsemi
 nddl01n60z.pdf pdf_icon

1N60Z

NDDL01N60Z, NDTL01N60ZN-Channel Power MOSFET600 V, 15 WFeatures 100% Avalanche Tested Gate Charge Minimizedhttp://onsemi.com Zener-protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAXCompliant600 V 15 W @ 10 VABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol NDD NDT UnitN-Channel MOSFETDr

Datasheet: 18N60 , 20N60 , 22N60 , UF601 , UK2996 , 1N60A , 1N60 , 1N60P , IRF840 , 2N60L , 2N60 , 2N60K , 3N60 , 3N60A , 3N60Z , 3N60K , 4N60 .

History: BLL6H0514LS-130 | BUK9E06-55A

Keywords - 1N60Z MOSFET datasheet

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