UNISONIC TECHNOLOGIES CO., LTD 9N50 Power MOSFET Preliminary 9 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy puls

April 2014FQP9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to minim

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been e

TMQFETFQB9N50C/FQI9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

October 2006TMFRFETFQB9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 24pF)This advanced technology has been especially tailored to

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been e

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

December 2005TMFRFETFQPF9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC)DMOS technology. Low Crss (typical 24pF)This advanced technology has been especially tailored to

April 2000TMQFETQFETQFETQFETFQB9N50 / FQI9N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.2A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

November 2013FQPF9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to m

A Product Line of Diodes Incorporated ZXTD09N50DE6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BVCEO > 50V Case: SOT26 IC = 1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound; High Gain UL Flammability Classification Rating 94V-0 RSAT = 160m for Low Equivalent On Resistance

ZXTD09N50DE6E6SuperSOTDUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=50V; RSAT = 160m ; IC= 1ADESCRIPTIONA dual NPN low saturation transistor combination contained in a single 6 leadSOT23 package. Each transistor is the equivalent to the ZUMT619 device.FEATURESSOT23-6 Low Equivalent On Resistance Low Saturation Voltage IC=1A Continuous Col

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 500 0.85 @ VGS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resista

KF9N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF9N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentDIMavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V, ID= 9

KQ9N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description TENTATIVEThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellent KQ9N50Pavalanche characteristics. It is mainly suitable for electronic ballast andAOCswitching mode power supplies.FE DIM MILLIMETERS

AOD9N50/AOI9N50500V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N50 & AOI9N50 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 600V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 9Apopular AC-DC applications. RDS(ON) (at VGS=10V)

AOT9N50/AOTF9N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOD9N50/AOI9N50500V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N50 & AOI9N50 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 600V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 9Apopular AC-DC applications. RDS(ON) (at VGS=10V)

AOT9N50/AOTF9N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AP09N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

AP09N50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresistan

AP09N50P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 500V Fast Switching Characteristic RDS(ON) 0.75 RoHS Compliant & Halogen-Free ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowG

N RN-CHANNEL MOSFET JCS9N50T Package MAIN CHARACTERISTICS ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 29 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

N RN-CHANNEL MOSFET JCS9N50C Package MAIN CHARACTERISTICS ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 29 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE

Spec. No. : C720FP Issued Date : 2009.10.01 CYStech Electronics Corp.Revised Date : 2014.11.06 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.78 typ. MTN9N50FP ID : 8.5A Description The MTN9N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

ITP09N50AN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Typ.) ID Adaptor Charger500 V 0.55 9.0 A SMPS Standby PowerFeatures: RoHS CompliantD Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveGGDSOrdering InformationPART NUMBER PACKAGE BRAND TO-220 SNot to ScaleITP09N50A TO-220 ITP0

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMDTypeSMDType ICProduct specificationKQB9N50TO-263Unit: mm4.57+0.2Features -0.2+0.11.27-0.19A, 500 V. RDS(ON) =0.73 @VGS =10 VLow

MDP9N50B / MDF9N50B N-Channel MOSFET 500V, 9.0 A, 0.85General Description Features The MDP/F9N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.85 @VGS = 10V excellent quality. MDP/F9N50B is suitable device for SMPS, HID and Applications general purpo

MDF9N50F N-Channel MOSFET 500V, 8.0 A, 0.9 General Description Features The MDF9N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 8.0A @V = 10V D GSresistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. Applications MDF9N50F is suitable device for SMPS, HID and general purp

MDP9N50 N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP9N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state ID = 9.0A @VGS = 10V resistance, high switching performance and R

SFP9N50SFP9N50SFP9N50SFP9N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,500V, R (Max0.85)@V =10VDS(on) GS Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

WFF9N50WFF9N50WFF9N50WFF9N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,500V, R (Max0.75)@V =10VDS(on) GS Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

BL9N50 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL9N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

GPT09N50 GPT09N50DPOWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is des

JFPC9N50C JFFM9N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 9A, 500V, RDS(on)typ. = 0.85@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

PTP09N50 PTA09N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology500V 0.55 9A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTP09N50

SW9N50D N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET Features TO-252 TO-220F TO-220 BVDSS : 500V ID : 9A High ruggedness Low RDS(ON) (Typ 0.68)@VGS=10V RDS(ON) : 0.68 Low Gate Charge (Typ 31nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 2 2 Application: DC-DCLEDPC 3 3 3 1. Gate 2. Drain 3. Source

June 2005BVDSS = 500 VRDS(on) typ HFP9N50ID = 9.0 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(O

June 2005BVDSS = 500 VRDS(on) typ HFW9N50 / HFI9N50ID = 9.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW9N50 HFI9N50 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Op

Mar 2008BVDSS = 500 VRDS(on) typ HFS9N50ID = 9.0 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

500V/9A N-Channel MOSFET MSK9N50T/F500V/9A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for electronic ballast Suitable for switching mode power supplies TO-220Features VDSS=500V, ID=9A; Low Drain-Source ON Resistance: RDS(ON) =0.8 @ VGS=10V

TMP9N50/TMPF9N50TMP9N50G/TMPF9N50GVDSS = 550 V @TjmaxFeaturesID = 9A Low gate chargeRDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHSTMP9N50G / TMPF9N50G TO-220 / T

TMP9N50S(G)/TMPF9N50S(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 8.5A

QM09N50F 1 2011-06-15 - 1 -N-Ch 500V Fast Switching MOSFETsGeneral Description Product SummeryThe QM09N50F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 500V 0.75 9 Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM09N50F m

WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S

FIR9N50FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 500 VID 9 APD (TC=25) 130 WRDS(ON) 0.68 G Features D S Fast Switching gSchematic dia ram ) Low ON Resistance(Rdson 0.85 D Low Gate Charge (Typical Data:13nC) Low Reverse transfer capacitances(Typical:12pF) G 100% Single Pulse avalanche energy Test S Applications Power switch circu

SPC9N50GSinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J A(Vgs=10V) ID 9 oR typ. at 25 C () V =10V 0.64 DS(on) GS Ultra Low Gate Charge Q max. (nC) 31.5 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd ROHS compliant Configuration sing

FuXin Semiconductor Co., Ltd.FXN9N50F Series Rev.AGeneral Description FeaturesThe FXN9N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 9A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

isc N-Channel MOSFET Transistor MDF9N50BTHFEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOD9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.86(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor AOTF9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor MDP9N50BTHFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor AOI9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.86(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor MDP9N50THFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor AOT9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos