Справочник MOSFET. 13N50

 

13N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 13N50
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 168 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 13 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 140 ns
   Выходная емкость (Cd): 245 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.42 Ohm
   Тип корпуса: TO-220 TO-220F TO-220F1

 Аналог (замена) для 13N50

 

 

13N50 Datasheet (PDF)

 ..1. Size:216K  utc
13n50.pdf

13N50
13N50

UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse 1under the avalanche and commutat

 ..2. Size:1972K  goford
13n50.pdf

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13N50

GOFORD13N50500V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.500V 0.48 13AThis advanced technology has beenespecially tailored to minimize on-stateresistance, provide superior switchingperformance, and withstand high energypulse in the avalanche and commutationmode. These devices are well

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jcs13n50ft.pdf

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N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

 0.2. Size:729K  motorola
mth13n45 mth13n50 mth15n35 mth15n40.pdf

13N50
13N50

 0.3. Size:189K  international rectifier
irfb13n50apbf.pdf

13N50
13N50

PD - 95122SMPS MOSFETIRFB13N50APbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 500V 0.450 14Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanch

 0.4. Size:97K  international rectifier
irfb13n50a.pdf

13N50
13N50

PD - 94339SMPS MOSFETIRFB13N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 14A High Speed Power SwitchingBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltageand Current

 0.5. Size:519K  st
std13n50dm2ag.pdf

13N50
13N50

STD13N50DM2AGDatasheetAutomotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTD13N50DM2AG 500 V 360 m 11 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche tested E

 0.6. Size:967K  fairchild semi
fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf

13N50
13N50

October 2008QFETFQB13N50C/FQI13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially

 0.7. Size:699K  fairchild semi
fqa13n50c.pdf

13N50
13N50

QFETFQA13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored to Fa

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fqa13n50c f109.pdf

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13N50

December 2013FQA13N50C_F109N-Channel QFET MOSFET500 V, 13.5 A, 480 mDescription FeaturesThese N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.75 Aplanar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC)has been especia

 0.9. Size:922K  fairchild semi
fqp13n50c fqpf13n50c.pdf

13N50
13N50

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

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fqp13n50cf fqpf13n50cf.pdf

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May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

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fqp13n50c fqpf13n50c.pdf

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November 2013FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC)technology has been especia

 0.12. Size:721K  fairchild semi
fqa13n50.pdf

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13N50

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 13.4A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

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fdp13n50f fdpf13n50ft.pdf

13N50
13N50

September 2007UniFETTMFDP13N50F / FDPF13N50FTtmN-Channel MOSFET 500V, 12A, 0.54Features Description RDS(on) = 0.42 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 30nC)stripe, DMOS technology. Low Crss ( Typ. 14.5pF)This advanced technol

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fqpf13n50 fqpf13n50t.pdf

13N50
13N50

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

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fqa13n50cf.pdf

13N50
13N50

July 2007 FRFETFQA13N50CF500V N-Channel MOSFETFeatures Description 15A, 500V, RDS(on) = 0.48 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tailored to

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fqp13n50 fqpf13n50.pdf

13N50
13N50

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

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fqpf13n50csdtu fqpf13n50ct.pdf

13N50
13N50

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 0.18. Size:201K  vishay
irfb13n50a sihfb13n50a.pdf

13N50
13N50

IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

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irfb13n50a irfb13n50apbf sihfb13n50a.pdf

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IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

 0.20. Size:798K  diodes
zxt13n50de6.pdf

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A Product Line ofDiodes IncorporatedZXT13N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case: SOT26 IC = 4A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 10A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 36m for a Low Equivalent On-Res

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irfb13n50a sihfb13n50a.pdf

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IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.450RoHS*Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANTQgs (nC) 20Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration

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ixfj13n50.pdf

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HiPerFETTM IXFJ 13N50 VDSS = 500 VPower MOSFETs ID (cont) = 13 ARDS(on) = 0.4 WN-Channel Enhancement Modetrr 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C; RGS = 1 MW 500 VDVGS Continuous 20 VS(TAB)VGSM Transient 30 VID25 TC = 25C13 A G = Gate, D = Drain,S = So

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ixfh13n50 ixfm13n50.pdf

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HiPerFETTM IXFH 13 N50 VDSS = 500 VPower MOSFETs IXFM 13 N50 ID (cont) = 13 ARDS(on) = 0.4 WN-Channel Enhancement Modetrr 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C13 ATO-204 AA

 0.24. Size:1172K  onsemi
fqp13n50c fqpf13n50c.pdf

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FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using ON Semiconductors ID = 6.5 Aproprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC)advanced technology has been especially tail

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fqa13n50cf.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqi13n50c.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.27. Size:618K  onsemi
fqpf13n50cf.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.28. Size:882K  onsemi
fqp13n50 fqpf13n50.pdf

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TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

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fqa13n50c-f109.pdf

13N50
13N50

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patentcoverage may be accessed at www.onsemi.com/s

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13n50l-ta3-t 13n50g-ta3-t 13n50l-tf3-t 13n50g-tf3-t 13n50l-tf1-t 13n50g-tf1-t.pdf

13N50
13N50

UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode cond

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13n50l-t2q-t 13n50g-t2q-t 13n50l-tq2-t 13n50g-tq2-t 13n50l-tq2-r 13n50g-tq2-r.pdf

13N50
13N50

UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode cond

 0.32. Size:518K  taiwansemi
tsm13n50ci tsm13n50cz.pdf

13N50
13N50

TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

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kf13n50p-f.pdf

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KF13N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF13N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 500V, ID= 13ADra

 0.34. Size:159K  aosemi
aot13n50.pdf

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AOT13N50/AOTF13N50500V, 13A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT13N50 & AOTF13N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 13Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

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aotf13n50.pdf

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AOT13N50/AOTF13N50500V, 13A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT13N50 & AOTF13N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 13Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

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ap13n50r-hf.pdf

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AP13N50R-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedize

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ap13n50w.pdf

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AP13N50WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resistance

 0.38. Size:158K  ape
ap13n50r.pdf

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AP13N50R-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAP13N50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

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ap13n50i-hf.pdf

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AP13N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedize

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sif13n50c.pdf

13N50
13N50

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF13N50CN- MOS / N-CHANNEL POWER MOSFET SIF13N50CN- MOS / N-CHA

 0.41. Size:1655K  jilin sino
jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf

13N50
13N50

N N- CHANNEL MOSFET RJCS13N50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson@Vgs=10V 0.49 Qg 27 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

 0.42. Size:1016K  jilin sino
jcs13n50ft.pdf

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13N50

N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

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mtn13n50e3.pdf

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Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis

 0.44. Size:338K  cystek
mtn13n50fp.pdf

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13N50

Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

 0.45. Size:510K  silikron
ssf13n50.pdf

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13N50

SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39(typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 o

 0.46. Size:533K  silikron
ssf13n50f.pdf

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SSF13N50F Main Product Characteristics: VDSS 500V RDS(on) 0.41(typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.47. Size:903K  blue-rocket-elect
br13n50.pdf

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13N50

BR13N50 Rev.F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low gate charge, Low Crss , Fast switching. / Applications AC/DC It is very suit

 0.48. Size:896K  blue-rocket-elect
brf13n50.pdf

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BRF13N50(BRCS13N50FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,Ultra low gate charge, low effective output capacitance, high switch speed. / Applications

 0.49. Size:314K  nell
irf13n50.pdf

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RoHS IRF13N50 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(14A, 500Volts)DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode Dsilicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

 0.50. Size:500K  shantou-huashan
hfp13n50.pdf

13N50
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Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 0.51. Size:489K  crhj
cs13n50 a8d.pdf

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Silicon N-Channel Power MOSFET R CS13N50 A8D VDSS 500 V General Description ID 13 A CS13N50 A8D, the silicon N-channel Enhanced PD (TC=25) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.52. Size:486K  crhj
cs13n50f a9d.pdf

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Silicon N-Channel Power MOSFET R CS13N50F A9D VDSS 500 V General Description ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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cs13n50 a8r.pdf

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13N50

Silicon N-Channel Power MOSFET R CS13N50 A8R General Description VDSS 500 V CS13N50 A8R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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cs13n50 a8h.pdf

13N50
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Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

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cs13n50f a9r.pdf

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Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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cs13n50f a9h.pdf

13N50
13N50

Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 0.57. Size:147K  jdsemi
cm13n50f to220fh.pdf

13N50
13N50

RCM13N50F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS

 0.58. Size:130K  jdsemi
cm13n50.pdf

13N50
13N50

RC1N0M35 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12 3

 0.59. Size:447K  silan
svf13n50t svf13n50f svf13n50pn.pdf

13N50
13N50

SVF13N50T/F/PN 13A500V N SVF13N50T/F/PN N MOS F-CellTM VDMOS

 0.60. Size:321K  silan
svf13n50cfj.pdf

13N50
13N50

SVF13N50CFJ 13A500V N 2SVF13N50CFJ N MOS F-CellTM VDMOS 1 3

 0.61. Size:414K  silan
svf13n50f svf13n50t svf13n50pn svf13n50s svf13n50str.pdf

13N50
13N50

SVF13N50T(F)(PN)(S) 13A500V N 2SVF13N50T(F)(PN)(S) N MOS F-CellTM VDMOS 1. 2. 3.1

 0.62. Size:296K  silan
svf13n50af.pdf

13N50
13N50

SVF13N50AF 13A500V N 2SVF13N50AF N MOS F-CellTM VDMOS 13 1.

 0.63. Size:1339K  magnachip
mdp13n50th.pdf

13N50
13N50

MDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features The MDP13N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on- I = 13.0A @V = 10V D GSstate resistance, high switching performance R

 0.64. Size:1131K  magnachip
mdf13n50gth mdp13n50gth.pdf

13N50
13N50

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 0.65. Size:1209K  magnachip
mdf13n50bth mdp13n50bth.pdf

13N50
13N50

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5General Description Features The MDP/F13N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

 0.66. Size:854K  bruckewell
msf13n50.pdf

13N50
13N50

MSF13N50 500V N-Channel MOSFET Description The MSF13N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Typical 0.48 )@VGS=10V Ga

 0.67. Size:970K  bruckewell
ms13n50.pdf

13N50
13N50

MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic

 0.68. Size:558K  winsemi
wfp13n50.pdf

13N50
13N50

WFP13N50WFP13N50WFP13N50WFP13N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 13A,500V, R (Max0.46)@V =10VDS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

 0.69. Size:514K  winsemi
wff13n50.pdf

13N50
13N50

WFF13N50WFF13N50WFF13N50WFF13N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 13A,500V, R (Max0.46)@V =10VDS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

 0.70. Size:558K  winsemi
wfw13n50.pdf

13N50
13N50

WFW13N50WFW13N50WFW13N50WFW13N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 13A,500V, R (Max0.46)@V =10VDS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

 0.71. Size:539K  winsemi
sfp13n50.pdf

13N50
13N50

SFP13N50SFP13N50SFP13N50SFP13N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 13A,500V, R (Max0.46)@V =10VDS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

 0.72. Size:1204K  champion
gpt13n50 gpt13n50d.pdf

13N50
13N50

GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 TO-220F 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 GPT13N50 / G

 0.73. Size:1075K  feihonltd
fhp13n50a fhf13n50a.pdf

13N50
13N50

N N-CHANNEL MOSFET FHP13N50A/FHF13N50A MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.34 Fast switching Qg-typ 45nC 100% 100% avalanche tested dv/dt Imp

 0.74. Size:971K  feihonltd
fhp13n50c fhf13n50c.pdf

13N50
13N50

N N-CHANNEL MOSFET FHP13N50C/FHF13N50C MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 0.4 Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt Impr

 0.75. Size:144K  hy
hy13n50t.pdf

13N50
13N50

HY13N50T / HY13N50FT 500V / 13A500V, RDS(ON)=0.52W@VGS=10V, ID=6.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

 0.76. Size:995K  jiaensemi
jffm13n50e.pdf

13N50
13N50

JFFM13N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.77. Size:692K  jiaensemi
jfpc13n50c jffm13n50c.pdf

13N50
13N50

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 0.78. Size:114K  kia
kia13n50h.pdf

13N50
13N50

13A500V13N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology

 0.79. Size:1086K  maple semi
slp13n50a slf13n50a.pdf

13N50
13N50

LEAD FREEPbRoHSSLP13N50A / SLF13N50A500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Maple semis advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483@VGS = 10 VThis advanced technology has been especially tailored - Low gate charge ( typical 19.1nC)to minimize on-state resistance, provide superior switching - Low Crss (

 0.80. Size:1319K  maple semi
slp13n50c slf13n50c.pdf

13N50
13N50

SLP13N50C / SLF13N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 13A, 500V, RDS(on)typ. = 386m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 0.81. Size:565K  pipsemi
ptp13n50b pta13n50b.pdf

13N50
13N50

PTP13N50B PTA13N50B 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 500V 0.40 13A RDS(ON),typ.=0.40 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F PTP13N50B TO-

 0.82. Size:794K  pipsemi
psa13n50 psp13n50.pdf

13N50
13N50

PSA13N50 PSP13N50 500V N-ch Planar MOSFET General Features BVDSS RDS(ON),Typ. ID RoHS Compliant 500V 0.40 13A RDS(ON),typ.=0.40 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power Ordering Information Part Number Package Brand PSA13N50 TO-220F PSP13N50 TO-220

 0.83. Size:816K  samwin
swf13n50d swp13n50d.pdf

13N50
13N50

SW13N50D N-channel Enhancement mode TO-220F/TO-220 MOSFET TO-220F BVDSS : 500V Features TO-220 ID : 13A High ruggedness RDS(ON) : 0.46 RDS(ON) (Typ 0.46)@VGS=10V Gate Charge (Typ 47nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application:LED,Charger 3 3 1 1. Gate 2. Drain 3. Source 3 General Description Thi

 0.84. Size:151K  semihow
hfs13n50u.pdf

13N50
13N50

Nov 2013BVDSS = 500 VRDS(on) typ = 0.39 HFS13N50U ID = 13 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Lo

 0.85. Size:165K  semihow
hfp13n50s.pdf

13N50
13N50

March 2014BVDSS = 500 VRDS(on) typ HFP13N50SID = 13 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area L

 0.86. Size:154K  semihow
hfs13n50s.pdf

13N50
13N50

March 2014BVDSS = 500 VRDS(on) typ HFS13N50SID = 13 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area

 0.87. Size:163K  semihow
hfp13n50u.pdf

13N50
13N50

Nov 2013BVDSS = 500 VRDS(on) typ = 0.39 HFP13N50U ID = 13 A500V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Low

 0.88. Size:23K  shaanxi
wvm13n50.pdf

13N50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM13N50(IRF450)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

 0.89. Size:1143K  slkor
sl13n50fs.pdf

13N50
13N50

SL13N50FSN-Channel Power MOSFET Features 13.0A, 500V, R =0.40@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche TestedSchematic diagram Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionTO-220FAbsolute Maximum Ratings(Tc=25C unless otherw

 0.90. Size:336K  trinnotech
tmp13n50 tmpf13n50.pdf

13N50
13N50

TMP13N50/TMPF13N50TMP13N50G/TMPF13N50GVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHSTMP13N50G / TMPF13N50G

 0.91. Size:429K  trinnotech
tmpf13n50a.pdf

13N50
13N50

TMPF13N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 13A

 0.92. Size:1269K  truesemi
tsp13n50m tsf13n50m.pdf

13N50
13N50

TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 13A,500V,Max.RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperfo

 0.93. Size:661K  way-on
wmm13n50c4 wml13n50c4 wmo13n50c4 wmn13n50c4 wmp13n50c4 wmk13n50c4.pdf

13N50
13N50

WMM13N50C4, WML13N5 WM C4 50C4, MO13N50CWMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMO

 0.94. Size:1438K  way-on
wmk13n50d1b wml13n50d1b.pdf

13N50
13N50

WMK13N50D1B WML13N50D1B 500V 13A 0.5 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S Features Typ.R =0.5@V =10V DS(

 0.95. Size:226K  wuxi china
cs13n50fa9h.pdf

13N50
13N50

Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 0.96. Size:268K  wuxi china
cs13n50fa9r.pdf

13N50
13N50

Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.97. Size:357K  wuxi china
cs13n50a8h.pdf

13N50
13N50

Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.98. Size:930K  haolin elec
hfs13n50.pdf

13N50
13N50

Sep 2009BVDSS = 500 VRDS(on) typ = 0.4 HFS13N50ID = 13 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

 0.99. Size:1255K  lonten
lnc13n50 lnd13n50.pdf

13N50
13N50

LNC13N50/LND13N50Lonten N-channel 500V, 13A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 13ADresulting device has low conduction resistance, R 0.46DS(on),maxsuperior switching performance and high avalanche Q 33 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q =33

 0.100. Size:8369K  cn puolop
ptf13n50.pdf

13N50
13N50

PTF1 3 N5 05 00V/1 3 A N-Channel A dv anced Power MOSFETFeatures )@VGS=10V RDS(on) (Typical 0.44 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation

 0.101. Size:1322K  cn sps
smirf13n50.pdf

13N50
13N50

SMIRF13N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 13A SMIRF13N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.48(VGS=10V, ID=6.5A) on-state resistance, provide superi

 0.102. Size:1125K  cn vbsemi
vbzm13n50.pdf

13N50
13N50

VBZM13N50www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500ReqirementsRDS(on) ()VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81RuggednessQgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration Single Complian

 0.103. Size:892K  cn vbsemi
aot13n50.pdf

13N50
13N50

AOT13N50www.VBsemi.twN-Channel 650 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.34 Low figure-of-merit (FOM) Ron x QgQg max. (nC) 106 Low input capacitance (Ciss)Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche ener

 0.104. Size:1077K  cn vbsemi
vbzmb13n50.pdf

13N50
13N50

VBZMB13N50www.VBsemi.comN-Channel (D-S) Power MOSFET500V FEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.80 Improved Gate, Avalanche and Dynamic dV/dtAvailableQg (Max.) (nC) 81RuggednessQgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

 0.105. Size:349K  cn hmsemi
hm13n50 hm13n50f.pdf

13N50
13N50

HM13N50 / HM13N50FHM13N50 / HM13N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 13.0A, 500V, RDS(on) = 0.48 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to Fast witchingsminimize o n-state r esistance, pr ovide superior

 0.106. Size:288K  inchange semiconductor
mdp13n50th.pdf

13N50
13N50

isc N-Channel MOSFET Transistor MDP13N50THFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 0.107. Size:261K  inchange semiconductor
aot13n50.pdf

13N50
13N50

isc N-Channel MOSFET Transistor AOT13N50FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.51(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.108. Size:201K  inchange semiconductor
fqpf13n50c.pdf

13N50
13N50

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FQPF13N50CFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

 0.109. Size:278K  inchange semiconductor
fqpf13n50cf.pdf

13N50
13N50

isc N-Channel MOSFET Transistor FQPF13N50CFFEATURESDrain Current : I =13A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.54m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 0.110. Size:252K  inchange semiconductor
aotf13n50.pdf

13N50
13N50

isc N-Channel MOSFET Transistor AOTF13N50FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.51(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 0.111. Size:284K  inchange semiconductor
irfb13n50a.pdf

13N50
13N50

iscN-Channel MOSFET Transistor IRFB13N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.45 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.112. Size:467K  chongqing pingwei
13n50mf.pdf

13N50
13N50

13N50MF13 Amps,500 Volts N-CHANNEL MOSFETFEATURETO-220MF 13A,500V,R =0.48@V =10V/6.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityWeight: 2.16 gtyp.Absolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT13N50MFDrain-Source Voltage V 500DSSVGate-Source

Другие MOSFET... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BS170 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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