All MOSFET. 13N50 Datasheet

 

13N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 13N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 168 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 140 nS

Drain-Source Capacitance (Cd): 245 pF

Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm

Package: TO-220_TO-220F_TO-220F1

13N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

13N50 Datasheet (PDF)

1.1. gpt13n50 gpt13n50d.pdf Size:1204K _update

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 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 TO-220F 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 GPT13N50 / G

1.2. tmpf13n50a.pdf Size:429K _update

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TMPF13N50A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 13A <0.48W  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TO-220F Top view Ordering Part Number Package Marking Remark TMPF13N50A TO-220F TMPF13N50A RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage V

 1.3. tmp13n50 tmpf13n50.pdf Size:336K _update

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TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G VDSS = 550 V @Tjmax Features ID = 13A  Low gate charge RDS(on) = 0.48 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHS TMP13N50G / TMPF13N50G

1.4. irf13n50.pdf Size:314K _update

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RoHS IRF13N50 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (14A, 500Volts) DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

 1.5. fqa13n50c.pdf Size:699K _upd-mosfet

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® QFET FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored to • Fa

1.6. sihfb13n50a.pdf Size:201K _upd-mosfet

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IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ()VGS = 10 V 0.450 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 • Fully Characterized Capacitance and Avalanche Voltage Configuratio

1.7. irfb13n50a irfb13n50apbf.pdf Size:201K _upd-mosfet

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IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ()VGS = 10 V 0.450 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 • Fully Characterized Capacitance and Avalanche Voltage Configuratio

1.8. hy13n50t.pdf Size:144K _upd-mosfet

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HY13N50T / HY13N50FT 500V / 13A 500V, RDS(ON)=0.52W@VGS=10V, ID=6.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1

1.9. msf13n50.pdf Size:854K _upd-mosfet

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MSF13N50 500V N-Channel MOSFET Description The MSF13N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • RDS(on) (Typical 0.48 Ω )@VGS=10V • Ga

1.10. fqa13n50.pdf Size:721K _upd-mosfet

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 13.4A, 500V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been

1.11. sfp13n50.pdf Size:539K _upd-mosfet

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SFP13N50 SFP13N50 SFP13N50 SFP13N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 13A,500V, R (Max0.46Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

1.12. cs13n50fa9h.pdf Size:346K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS13N50F A9H VDSS 500 V General Description: ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.13. hfp13n50u.pdf Size:163K _update_mosfet

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Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFP13N50U ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Low

1.14. hfp13n50s.pdf Size:165K _update_mosfet

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March 2014 BVDSS = 500 V RDS(on) typ HFP13N50S ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area L

1.15. wff13n50.pdf Size:514K _update_mosfet

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WFF13N50 WFF13N50 WFF13N50 WFF13N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 13A,500V, R (Max0.46Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

1.16. cs13n50a8h.pdf Size:357K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS13N50 A8H VDSS 500 V General Description: ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.17. wvm13n50.pdf Size:23K _update_mosfet

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM13N50(IRF450) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

1.18. hfs13n50s.pdf Size:152K _update_mosfet

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March 2014 BVDSS = 500 V RDS(on) typ HFS13N50S ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area

1.19. tsm13n50ci tsm13n50cz.pdf Size:518K _update_mosfet

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 TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov

1.20. hfs13n50u.pdf Size:150K _update_mosfet

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Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFS13N50U ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Lo

1.21. fqpf13n50 fqpf13n50t.pdf Size:880K _fairchild_semi

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TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.5A, 500V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.22. fqb13n50c fqi13n50c.pdf Size:967K _fairchild_semi

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October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to

1.23. fqpf13n50csdtu fqpf13n50ct.pdf Size:891K _fairchild_semi

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TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored t

1.24. fqb13n50ctm.pdf Size:967K _fairchild_semi

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October 2008 QFET® FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially

1.25. fqp13n50cf fqpf13n50cf.pdf Size:1148K _fairchild_semi

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May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mi

1.26. fqa13n50cf.pdf Size:776K _fairchild_semi

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July 2007 FRFET FQA13N50CF 500V N-Channel MOSFET Features Description 15A, 500V, RDS(on) = 0.48? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to Fast switching

1.27. fdp13n50f fdpf13n50ft.pdf Size:625K _fairchild_semi

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September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54? Features Description RDS(on) = 0.42? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 30nC) stripe, DMOS technology. Low Crss ( Typ. 14.5pF) This advanced technology has been es

1.28. fqpf13n50c.pdf Size:1062K _fairchild_semi

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November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia

1.29. fqi13n50ctu.pdf Size:967K _fairchild_semi

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October 2008 QFET® FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially

1.30. fqp13n50c fqpf13n50c.pdf Size:922K _fairchild_semi

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TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast swi

1.31. fqp13n50c.pdf Size:1062K _fairchild_semi

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November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia

1.32. fqp13n50 fqpf13n50.pdf Size:883K _fairchild_semi

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TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast sw

1.33. fqa13n50c f109.pdf Size:862K _fairchild_semi

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December 2013 FQA13N50C_F109 N-Channel QFET® MOSFET 500 V, 13.5 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect • 13.5 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology • Low Gate Charge (Typ. 43 nC) has been especia

1.34. irfb13n50a.pdf Size:97K _international_rectifier

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PD - 94339 SMPS MOSFET IRFB13N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 ? 14A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-2

1.35. irfb13n50apbf.pdf Size:189K _international_rectifier

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PD - 95122 SMPS MOSFET IRFB13N50APbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.450 ? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

1.36. irfb13n50a sihfb13n50a.pdf Size:201K _vishay

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IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) (?)VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration Single

1.37. zxt13n50de6.pdf Size:423K _diodes

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ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATU

1.38. ixfh13n50 ixfm13n50.pdf Size:82K _ixys

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HiPerFETTM IXFH 13 N50 VDSS = 500 V Power MOSFETs IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr ? 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C13 A TO-204 AA (IXFM) IDM

1.39. ixfj13n50.pdf Size:66K _ixys

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HiPerFETTM IXFJ 13N50 VDSS = 500 V Power MOSFETs ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr £ 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V D é VGS Continuous ±20 V S (TAB) VGSM Transient ±30 V ID25 TC = 25°C13 A G = Gate, D = Drain, S = So

1.40. 13n50.pdf Size:216K _utc

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UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse 1 under the avalanche and commutation

1.41. kf13n50p-f.pdf Size:901K _kec

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KF13N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF13N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 500V, ID= 13A ·Dra

1.42. aotf13n50.pdf Size:159K _aosemi

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AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.51Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

1.43. aot13n50.pdf Size:159K _aosemi

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AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.51Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

1.44. ap13n50r.pdf Size:158K _a-power

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AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.52Ω ▼ Fast Switching Characteristic ID 14A G ▼ RoHS Compliant & Halogen-Free S Description AP13N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

1.45. ap13n50i-hf.pdf Size:96K _a-power

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AP13N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

1.46. ap13n50w.pdf Size:58K _a-power

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AP13N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

1.47. ap13n50r-hf.pdf Size:57K _a-power

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AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

1.48. sif13n50c.pdf Size:298K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHA

1.49. mtn13n50e3.pdf Size:508K _cystek

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Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp. Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.48Ω MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis

1.50. mtn13n50fp.pdf Size:338K _cystek

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Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.48Ω typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

1.51. 13n50.pdf Size:1972K _goford

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GOFORD 13N50 500V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 500V 0.48Ω 13A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

1.52. ssf13n50.pdf Size:510K _silikron

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 SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39Ω(typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ o

1.53. ssf13n50f.pdf Size:533K _silikron

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 SSF13N50F Main Product Characteristics: VDSS 500V RDS(on) 0.41Ω(typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.54. brf13n50.pdf Size:896K _blue-rocket-elect

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BRF13N50(BRCS13N50FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 超低栅电荷,低反馈电容,开关速度快。 Ultra low gate charge, low effective output capacitance, high switch speed. 用途 / Applications 用于小型化高效率的开关电源的

1.55. hfp13n50.pdf Size:500K _shantou-huashan

13N50
13N50

 Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

1.56. cs13n50 a8h.pdf Size:357K _crhj

13N50
13N50

Silicon N-Channel Power MOSFET R ○ CS13N50 A8H VDSS 500 V General Description: ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.57. cs13n50f a9d.pdf Size:486K _crhj

13N50
13N50

Silicon N-Channel Power MOSFET R ○ CS13N50F A9D VDSS 500 V General Description: ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.58. cs13n50f a9h.pdf Size:346K _crhj

13N50
13N50

Silicon N-Channel Power MOSFET R ○ CS13N50F A9H VDSS 500 V General Description: ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.59. cs13n50 a8r.pdf Size:265K _crhj

13N50
13N50

Silicon N-Channel Power MOSFET R ○ CS13N50 A8R General Description: VDSS 500 V CS13N50 A8R, the silicon N-channel Enhanced ID 13 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.60. cs13n50f a9r.pdf Size:268K _crhj

13N50
13N50

Silicon N-Channel Power MOSFET R ○ CS13N50F A9R General Description: VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.61. cs13n50 a8d.pdf Size:489K _crhj

13N50
13N50

Silicon N-Channel Power MOSFET R ○ CS13N50 A8D VDSS 500 V General Description: ID 13 A CS13N50 A8D, the silicon N-channel Enhanced PD (TC=25℃) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.62. cm13n50f to220fh.pdf Size:147K _jdsemi

13N50
13N50

R CM13N50F 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS

1.63. cm13n50.pdf Size:130K _jdsemi

13N50
13N50

R C1N0 M35 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯、 跑步机等功率开关电路 2 .主要特点 开关速度快 驱动简单,可并联使用 3 .封装

1.64. mdf13n50bth.pdf Size:1209K _magnachip

13N50
13N50



1.65. mdf13n50gth.pdf Size:1131K _magnachip

13N50
13N50



1.66. mdp13n50gth.pdf Size:1131K _magnachip

13N50
13N50

 MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip’s MOSFET Technology, which provides low on- ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) < 0.5Ω @ VGS = 10V quality. These devices are suitable de

1.67. mdp13n50bth.pdf Size:1209K _magnachip

13N50
13N50

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5Ω General Description Features The MDP/F13N50B uses advanced Magnachip’s VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 0.5Ω @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

1.68. msf13n50.pdf Size:854K _bruckewell

13N50
13N50

MSF13N50 500V N-Channel MOSFET Description The MSF13N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • RDS(on) (Typical 0.48 Ω )@VGS=10V • Ga

1.69. wfw13n50.pdf Size:558K _winsemi

13N50
13N50

WFW13N50 WFW13N50 WFW13N50 WFW13N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features ■ 13A,500V, R (Max0.46Ω)@V =10V DS(on) GS ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

1.70. wfp13n50.pdf Size:558K _winsemi

13N50
13N50

WFP13N50 WFP13N50 WFP13N50 WFP13N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 13A,500V, R (Max0.46Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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