Справочник MOSFET. 5N50

 

5N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 5N50
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 125 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 5 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 46 ns
   Выходная емкость (Cd): 80 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
   Тип корпуса: TO-262 TO-220F1 TO-252 TO-220F

 Аналог (замена) для 5N50

 

 

5N50 Datasheet (PDF)

 ..1. Size:217K  utc
5n50.pdf

5N50
5N50

UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220FTO-262The UTC 5N50 is an N-channel power MOSFET adoptingUTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It

 ..2. Size:230K  inchange semiconductor
5n50.pdf

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5N50

isc N-Channel MOSFET Transistor 5N50DESCRIPTIONDrain Current: I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER VALUE UNITV D

 0.1. Size:387K  1
cs25n50akr.pdf

5N50
5N50

Silicon N-Channel Power MOSFET R CS25N50 AKR General Description VDSS 500 V CS25N50 AKR the silicon N-channel Enhanced ID 25 A PD(TC=25) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.2. Size:25K  1
ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf

5N50
5N50

TRANSISTORSPOWER MODULESBIPOLAR IN ISOTOPFor other conf.VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf*Conf. Type(V) (V) (A) (W) (V) (A) (A) (s) (s)D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35B BUT2

 0.3. Size:336K  1
sth15n50 sth15n50fi stw15n50.pdf

5N50
5N50

 0.4. Size:280K  motorola
mtv25n50e.pdf

5N50
5N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTV25N50E/DAdvance InformationMTV25N50ETMOS E-FET.Power Field Effect TransistorD3PAK for Surface MountTMOS POWER FETN Ch

 0.5. Size:200K  motorola
mtm15n45 mtm15n50.pdf

5N50
5N50

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material C

 0.6. Size:517K  international rectifier
irfib5n50l.pdf

5N50
5N50

PD - 94522SMPS MOSFETIRFIB5N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. IDl Switch Mode Power Supply (SMPS)500V 0.67 73ns 4.7Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessTO-220 Full-Pakl Fully Chara

 0.7. Size:174K  international rectifier
irfps35n50lpbf.pdf

5N50
5N50

PD- 95140IRFPS35N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.125 170ns 34A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 0.8. Size:123K  international rectifier
irfps35n50l.pdf

5N50
5N50

PD- 94227IRFPS35N50LSMPS MOSFETApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply VDSS RDS(on) typ. IDl High Speed Power Switching500V 0.125 34Al ZVS and High Frequency Circuitl PWM InvertersBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessl Fully Ch

 0.9. Size:197K  international rectifier
irfib5n50lpbf.pdf

5N50
5N50

PD - 95390IRFIB5N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.67 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 0.10. Size:24K  philips
phx5n50e 1.pdf

5N50
5N50

Philips Semiconductors Objective specification PowerMOS transistor PHX5N50E Isolated version of PHP8N50EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 4 Ablocking voltag

 0.11. Size:336K  st
stw15n50.pdf

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5N50

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stp5n50 stp5n50fi.pdf

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5N50

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std15n50m2ag.pdf

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5N50

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

 0.14. Size:109K  renesas
h5n5006ld h5n5006lm.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.15. Size:111K  renesas
rej03g1115 h5n5006ldlslmds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.16. Size:99K  renesas
rej03g1116 h5n5007pds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.17. Size:69K  renesas
rej03g0378 h5n5012p.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.18. Size:99K  renesas
rej03g1117 h5n5015pds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.19. Size:153K  renesas
rej03g0175 h5n5016pl.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.20. Size:107K  renesas
rej03g0397 h5n5006dlds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.21. Size:169K  renesas
h5n5004pl-e0-e.pdf

5N50
5N50

Preliminary Datasheet H5N5004PL-E0-E R07DS1198EJ0100500V - 50A - MOS FET Rev.1.00High Speed Power Switching Mar 26, 2014Features Low on-resistance R DS (on) = 0.09 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ Outline

 0.22. Size:206K  renesas
rej03g1112 h5n5001fmds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.23. Size:191K  renesas
h5n5005pl-e0-e.pdf

5N50
5N50

Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300500V - 60A - MOS FET Rev.3.00High Speed Power Switching Mar 25, 2014Features Low on-resistance RDS(on) = 0.070 typ. (at ID = 30 A, VGS= 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode Outline RENESAS Package cod

 0.24. Size:100K  renesas
rej03g1114 h5n5006fmds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.25. Size:121K  renesas
rej03g1113 h5n5004plds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.26. Size:154K  renesas
rej03g0419 h5n5005plds.pdf

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.27. Size:146K  renesas
h5n5016pl-e0-e.pdf

5N50
5N50

Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100500V - 50A - MOS FET Rev.1.00High Speed Power Switching Mar 25, 2014Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003ZC-A(Package name:TO-264)D1.

 0.28. Size:194K  fairchild semi
fdh15n50 fdp15n50 fdb15n50.pdf

5N50
5N50

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 0.29. Size:879K  fairchild semi
fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf

5N50
5N50

TMQFETFQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 0.30. Size:645K  fairchild semi
fdd5n50u.pdf

5N50
5N50

December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology h

 0.31. Size:945K  fairchild semi
fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf

5N50
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October 2008QFETFQB5N50C/FQI5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tai

 0.32. Size:265K  fairchild semi
fdp5n50 fdpf5n50.pdf

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December 2007UniFETTMFDP5N50 / FDPF5N50tmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has bee

 0.33. Size:181K  fairchild semi
fdh15n50 fdp15n50.pdf

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August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 0.34. Size:371K  fairchild semi
fdp5n50.pdf

5N50
5N50

May 2012UniFETTMFDP5N50 / FDPF5N50TtmN-Channel MOSFET 500V, 5A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been es

 0.35. Size:548K  fairchild semi
fqd5n50.pdf

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5N50

TIGER ELECTRONIC CO.,LTD500V N-Channel MOSFETFQD5N50DESCRIPTIONThese N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche an

 0.36. Size:700K  fairchild semi
fqb5n50cf fqb5n50cftm.pdf

5N50
5N50

May 2006TMFRFETFQB5N50CF500V N-Channel MOSFETFeatures Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC)DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to mini

 0.37. Size:752K  fairchild semi
fdd5n50f.pdf

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December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has

 0.38. Size:503K  fairchild semi
fdd5n50.pdf

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December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especiall

 0.39. Size:513K  fairchild semi
fdh45n50f.pdf

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November 2013FDH45N50FN-Channel UniFETTM FRFET MOSFET500 V, 45 A, 120 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 105 m (Typ.) @ VGS = 10 V, ID = 22.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better swi

 0.40. Size:247K  fairchild semi
fdp5n50nz fdpf5n50nz.pdf

5N50
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March 2010UniFET-IITMFDP5N50NZ / FDPF5N50NZtmN-Channel MOSFET500V, 4.5A, 1.5Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC)DMOS technology. Low Crss (Typ. 4pF)This advance technology has b

 0.41. Size:580K  fairchild semi
fdpf5n50t.pdf

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November 2013FDPF5N50TN-Channel UniFETTM MOSFET500 V, 5 A, 1.4 Features Description RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 11 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF)provi

 0.42. Size:664K  fairchild semi
fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf

5N50
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October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially

 0.43. Size:256K  fairchild semi
fdp5n50nzf fdpf5n50nzf.pdf

5N50
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February 2010TMUniFET-IIFDP5N50NZF / FDPF5N50NZFtmN-Channel MOSFET500V, 4.2A, 1.75Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advanc

 0.44. Size:427K  fairchild semi
fdp5n50f fdpf5n50ft.pdf

5N50
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December 2007UniFETTMFDP5N50F / FDPF5N50FTtmN-Channel MOSFET, FRFET 500V, 4.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced tech

 0.45. Size:768K  fairchild semi
fqd5n50tf fqu5n50tu.pdf

5N50
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April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

 0.46. Size:548K  fairchild semi
fdd5n50nz.pdf

5N50
5N50

November 2009UniFET-IITMFDD5N50NZN-Channel MOSFET 500V, 4A, 1.5Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been especially

 0.47. Size:564K  fairchild semi
fdd5n50nzf.pdf

5N50
5N50

November 2009UniFET-IITMFDD5N50NZFN-Channel MOSFET 500V, 3.7A, 1.75Features Description RDS(on) = 1.47 ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been esp

 0.48. Size:657K  fairchild semi
fqpf5n50cf fqpf5n50cftu.pdf

5N50
5N50

TMFRFETFQPF5N50CF 500V N-Channel MOSFETFeatures Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC)DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to mini- F

 0.49. Size:224K  fairchild semi
fdp5n50u fdpf5n50ut.pdf

5N50
5N50

November2009TMUltra FRFETFDP5N50U / FDPF5N50UTtmN-Channel MOSFET, FRFET500V, 4A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance tech

 0.50. Size:702K  fairchild semi
fdp5n50nzu fdpf5n50nzu.pdf

5N50
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February 2010TMUniFET-IIFDP5N50NZU / FDPF5N50NZUtmN-Channel MOSFET500V, 3.9A, 2.0Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC)DMOS technology. Low Crss ( Typ. 4pF)This advance

 0.51. Size:750K  fairchild semi
fqpf5n50.pdf

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April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been

 0.52. Size:768K  fairchild semi
fqb5n50tm.pdf

5N50
5N50

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

 0.53. Size:179K  vishay
sihu5n50d.pdf

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SiHU5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5 - Avalanche Energy Rated (UIS)

 0.54. Size:158K  vishay
sihp15n50e.pdf

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SiHP15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

 0.55. Size:198K  vishay
sihd5n50d.pdf

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5N50

SiHD5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5 - Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching Losses- High Body Diode RuggednessQgs (nC) 3Available- Avalanche Energy Rated (UIS)Qgd

 0.56. Size:167K  vishay
sihf5n50d.pdf

5N50
5N50

SiHF5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5- Avalanche Energy Rated (UIS)Co

 0.57. Size:129K  vishay
irfps35n50lpbf.pdf

5N50
5N50

IRFPS35N50L, SiHFPS35N50LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.125RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 230COMPLIANTRequirementsQgs (nC) 65 Enhanced dV/dt Capabilities Offer Improved Ruggedne

 0.58. Size:158K  vishay
sihp25n50e.pdf

5N50
5N50

SiHP25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

 0.59. Size:164K  vishay
siha25n50e.pdf

5N50
5N50

SiHA25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

 0.60. Size:164K  vishay
siha15n50e.pdf

5N50
5N50

SiHA15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

 0.61. Size:200K  vishay
sihb15n50e.pdf

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5N50

SiHB15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

 0.62. Size:806K  vishay
irfib5n50lpbf.pdf

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5N50

IRFIB5N50L, SiHFIB5N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsRoHSRDS(on) ()VGS = 10 V 0.67COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 45ReqirementsQgs (nC) 13Qgd (nC) 23 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 0.63. Size:212K  vishay
sihp5n50d.pdf

5N50
5N50

SiHP5N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.5- Low Input Capacitance (Ciss)Qg (max.) (nC) 20- Reduced Capacitive Switching LossesQgs (nC) 3- High Body Diode RuggednessQgd (nC) 5 - Avalanche Energy Rated (UIS)

 0.64. Size:176K  vishay
sihg25n50e.pdf

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5N50

SiHG25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

 0.65. Size:38K  ixys
ixfk33n50 ixfk35n50.pdf

5N50
5N50

VDSS ID25 RDS(on)HiPerFETTMIXFK33N50 500 V 33 A 0.16 WPower MOSFETsIXFK35N50 500 V 35 A 0.15 WN-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dv/dt, Low trrPreliminary dataTO-264 AASymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VGVGS Continuous 20 V D (TAB)DSVGSM Transient 30 VID

 0.66. Size:94K  ixys
ixfx50n50 ixfx55n50.pdf

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5N50

VDSS ID25 RDS(on)HiPerFETTMIXFX 50N50 500 V 50 A 100 mPower MOSFETsIXFX 55N50 500 V 55 A 80 m trr 250 ns Single Die MOSFETPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 VVGSM

 0.67. Size:577K  ixys
ixfk55n50 ixfx55n50 ixfn55n50.pdf

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5N50

VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2

 0.68. Size:121K  ixys
ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf

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5N50

VDSS ID25 RDS(on) trrHiPerFETTMPower MOSFET IXFN 55N50 500V 55A 80m 250nsIXFN 50N50 500V 50A 100m 250nsIXFK 55N50 500V 55A 80m 250nsSingle Die MOSFETIXFK 50N50 500V 50A 100m 250nsPreliminary data sheetTO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings IXFNIXFK IXFK IXFN55N50 50N50 55N50 50N50VDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C to 150C

 0.69. Size:164K  ixys
ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf

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5N50

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

 0.70. Size:104K  ixys
ixfn55n50f.pdf

5N50
5N50

Advance Technical InformationHiPerRFTM IXFN 55N50F VDSS = 500 VPower MOSFETs ID25 = 55 AF-Class: MegaHertz SwitchingRDS(on) = 85 mDN-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic RGgHigh dV/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to

 0.71. Size:75K  ixys
ixfr50n50 ixfr55n50.pdf

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5N50

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 50N50 500 V 43 A 100 mISOPLUS247TMIXFR 55N50 500 V 48 A 90 m(Electrically Isolated Back Surface) trr 250 ns Single Die MOSFETSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS

 0.72. Size:167K  ixys
ixta15n50l2.pdf

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5N50

Linear L2TM VDSS = 500VIXTA15N50L2Power MOSFETs ID25 = 15AIXTP15N50L2 RDS(on) 480m w/ Extended FBSOAIXTH15N50L2N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 20 V

 0.74. Size:133K  ixys
ixth15n50l2-ixtp15n50l2.pdf

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5N50

Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30

 0.75. Size:425K  onsemi
fdu5n50nztu.pdf

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5N50

FDU5N50NZTUPower MOSFET, N-Channel,UniFETt II500 V, 4 A, 1.5 WUniFET II MOSFET is ON Semiconductors high voltage MOSFETwww.onsemi.comfamily based on advanced planar stripe and DMOS technology. Thisadvanced MOSFET family has the smallest on-state resistance amongthe planar MOSFET, and also provides superior switching performanceDand higher avalanche energy strength. In add

 0.76. Size:157K  onsemi
ndf05n50z ndp05n50z ndd05n50z.pdf

5N50
5N50

NDF05N50Z, NDP05N50Z,NDD05N50ZN-Channel Power MOSFET500 V, 1.25 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant500 V1.25 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source

 0.77. Size:979K  onsemi
fqp5n50c fqpf5n50c.pdf

5N50
5N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 0.78. Size:833K  onsemi
fdd5n50u.pdf

5N50
5N50

FDD5N50UN-Channel UniFETTM Ultra FRFETTM MOSFET500 V, 3 A, 2.0 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 AThis MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performance

 0.79. Size:948K  onsemi
fdpf5n50nzu.pdf

5N50
5N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.80. Size:841K  onsemi
fdd5n50.pdf

5N50
5N50

FDD5N50N-Channel UniFETTM MOSFETDescription500 V, 4 A, 1.4 UniFETTM MOSFET is ON Semiconductors high voltage FeaturesMOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2 Aprovide better switching performance and higher avalanche Low Gate Charge (Typ.

 0.81. Size:1763K  onsemi
fdp5n50nz fdpf5n50nz.pdf

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5N50

 0.82. Size:688K  onsemi
fdpf5n50t.pdf

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5N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.83. Size:623K  onsemi
fdb15n50.pdf

5N50
5N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.84. Size:765K  onsemi
fdd5n50ftm-ws.pdf

5N50
5N50

FDD5N50FTM-WSN-Channel UniFETTM FRFET MOSFET 500 V, 3.5 A, 1.55 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage RDS(on) = 1.25 (Typ.) @ VGS = 10 V, ID = 1.75 A MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC)provide better switching performa

 0.85. Size:713K  onsemi
fdd5n50nz.pdf

5N50
5N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.86. Size:1732K  onsemi
fdd5n50nzf.pdf

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5N50

 0.87. Size:235K  utc
5n50l-tf3-t 5n50g-tf3-t 5n50l-tf1-t 5n50g-tf1-t 5n50l-tn3-r 5n50g-tn3-r 5n50l-t2q-t 5n50g-t2q-t.pdf

5N50
5N50

UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220FTO-262The UTC 5N50 is an N-channel power MOSFET adopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance.

 0.88. Size:232K  utc
15n50.pdf

5N50
5N50

UNISONIC TECHNOLOGIES CO., LTD 15N50 Power MOSFET 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTCs 1advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance andTO-220F2superior switching performance. It also can withstand high energy puls

 0.89. Size:209K  utc
5n50k.pdf

5N50
5N50

UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting1UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the TO-220Frequirements of the minimum on-state resistance and perfect switching performance. It also can

 0.90. Size:412K  fuji
fmi05n50e.pdf

5N50
5N50

FMI05N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.91. Size:416K  fuji
fmc05n50e.pdf

5N50
5N50

FMC05N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.92. Size:376K  fuji
fmv05n50e.pdf

5N50
5N50

FMV05N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 0.93. Size:424K  fuji
fmp05n50e.pdf

5N50
5N50

FMP05N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.94. Size:485K  secos
ssq5n50.pdf

5N50
5N50

SSQ5N50 4.5A, 500V, RDS(ON) 1500m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-220P DFEATURES C Low RDS(on) Technology. B Low thermal impedance. RT Fast switching speed. AESGAPPLICATIONS F I Electronic ballast. H Electronic transformer JK

 0.95. Size:401K  taiwansemi
tsm15n50ci.pdf

5N50
5N50

TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

 0.96. Size:395K  kec
kf5n50f.pdf

5N50
5N50

KF5N50P/F/PZ/FZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50P, KF5N50PZAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode pow

 0.97. Size:401K  kec
kf5n50pz.pdf

5N50
5N50

KF5N50PZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode power supplies. A 9.9 0.2B

 0.98. Size:380K  kec
kf5n50d dz.pdf

5N50
5N50

KF5N50D/DZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and LC D_A 6.60 + 0.20_B 6.10 + 0.20switching mode p

 0.99. Size:382K  kec
kf5n50ds.pdf

5N50
5N50

KF5N50DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic ba

 0.100. Size:63K  kec
kf15n50n.pdf

5N50
5N50

KF15N50NSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode _A +15.60 0.20_B4.80 + 0.20power supplies._

 0.101. Size:382K  kec
kf5n50dz-ds.pdf

5N50
5N50

KF5N50DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic

 0.102. Size:90K  kec
kf5n50ps-fs.pdf

5N50
5N50

KF5N50PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic ballast and swi

 0.103. Size:404K  kec
kf5n50dz-iz.pdf

5N50
5N50

KF5N50DZ/IZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50DZThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20

 0.104. Size:79K  kec
kf5n50fr kf5n50pr kf5n50ps.pdf

5N50
5N50

KF5N50PR/FR/PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PR, KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic

 0.105. Size:716K  kec
kf5n50fza-fsa.pdf

5N50
5N50

KF5N50FZA/FSASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS=

 0.106. Size:45K  hsmc
h05n50.pdf

5N50
5N50

Spec. No. : MOS200601HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4H05N50 Series Pin AssignmentH05N50 SeriesTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast switching

 0.107. Size:159K  aosemi
aotf5n50.pdf

5N50
5N50

AOT5N50/AOTF5N50500V, 5A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT5N50 & AOTF5N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 5Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.108. Size:159K  aosemi
aot5n50.pdf

5N50
5N50

AOT5N50/AOTF5N50500V, 5A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT5N50 & AOTF5N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 5Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.109. Size:347K  aosemi
aotf5n50fd.pdf

5N50
5N50

AOTF5N50FD500V, 5A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF5N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.110. Size:284K  aosemi
aod5n50.pdf

5N50
5N50

AOD5N50500V,5A N-Channel MOSFETGeneral Description Product SummaryThe AOD5N50 is fabricated using an advanced high 600V@150voltage MOSFET process that is designed to deliver high VDSlevels of performance and robustness in popular AC-DC ID (at VGS=10V)5Aapplications.By providing low RDS(on), Ciss and Crss along

 0.111. Size:59K  ape
ap05n50h-hf.pdf

5N50
5N50

AP05N50H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0AG RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SThe AP05N50 provide high blocking voltage to overcome voltage surgeand sag in the toug

 0.112. Size:59K  ape
ap05n50ei-hf.pdf

5N50
5N50

AP05N50EI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSDescriptionThe AP05N50 provide high blocking voltage to overcome voltage surgeGDand sag in the toughest power sys

 0.113. Size:196K  ape
ap05n50eh.pdf

5N50
5N50

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

 0.114. Size:63K  ape
ap05n50eh-hf ap05n50ej-hf.pdf

5N50
5N50

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SThe AP05N50 provide high blocking voltage to overcome voltage surgeand sag in the to

 0.115. Size:153K  ape
ap05n50p.pdf

5N50
5N50

AP05N50PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0AGSDescriptionGThe AP05N50 provide high blocking voltage to overcome voltage surgeTO-220(P)DSand sag in the toughest power system with the best comb

 0.116. Size:97K  ape
ap05n50ib-hf.pdf

5N50
5N50

AP05N50IB-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0AG RoHS Compliant & Halogen-FreeSDescriptionAP05N50 provide high blocking voltage to overcome voltage surgeand sag in the toughest power system with

 0.117. Size:95K  ape
ap05n50s-hf.pdf

5N50
5N50

AP05N50S-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0AG RoHS Compliant & Halogen-FreeSDescriptionThe AP05N50 provide high blocking voltage to overcome voltage surgeGDand sag in the toughest power sys

 0.118. Size:60K  ape
ap05n50i.pdf

5N50
5N50

AP05N50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0AGSDescriptionAP05N50 provide high blocking voltage to overcome voltage surgeGand sag in the toughest power system with the best combination of fast DTO

 0.119. Size:161K  ape
ap05n50ej.pdf

5N50
5N50

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

 0.120. Size:60K  ape
ap05n50i-hf.pdf

5N50
5N50

AP05N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID 5.0AG RoHS Compliant & Halogen-FreeSDescriptionAP05N50 provide high blocking voltage to overcome voltage surgeGand sag in the toughest power system wit

 0.121. Size:380K  sisemi
sif5n50c 1.pdf

5N50
5N50

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF5N50CN- MOS / N-CHANNEL POWER MOSFET SIF5N50CN- MOS / N-CHANN

 0.122. Size:340K  sisemi
sif5n50c.pdf

5N50
5N50

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF5N50CN- MOS / N-CHANNEL POWER MOSFET SIF5N50CN- MOS / N-CHANN

 0.123. Size:2112K  jilin sino
jcs5n50vt jcs5n50rt jcs5n50ct jcs5n50ft.pdf

5N50
5N50

N RN-CHANNEL MOSFET JCS5N50T Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS Rdson-max 1.6 @Vgs=10V 15 nC Qg-typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 0.124. Size:1627K  jilin sino
jcs5n50.pdf

5N50
5N50

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS5N50T \ Package ;NSpe MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson@Vgs=10V 1.6&! Qg 15 nC APPLICATIONS (u High efficiency switch _sQ5un

 0.125. Size:2342K  jilin sino
jcs5n50vc jcs5n50rc jcs5n50cc jcs5n50fc.pdf

5N50
5N50

N RN-CHANNEL MOSFET JCS5N50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 14nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

 0.126. Size:357K  cystek
mtn5n50fp.pdf

5N50
5N50

Spec. No. : C740FP Issued Date : 2011.04.12 CYStech Electronics Corp.Revised Date : 2012.01.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) max. : 1.6 MTN5N50FP ID : 4.5A Description The MTN5N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 0.127. Size:327K  cystek
mtn5n50j3.pdf

5N50
5N50

Spec. No. : C740J3 Issued Date : 2010.06.30 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) max. : 1.6 MTN5N50J3 ID : 4.5A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications

 0.128. Size:282K  cystek
mtn15n50fp.pdf

5N50
5N50

Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 0.129. Size:329K  cystek
mtn5n50i3.pdf

5N50
5N50

Spec. No. : C740I3 Issued Date : 2010.06.24 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) max. : 1.6 MTN5N50I3 ID : 4.5A Description The MTN5N50I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 0.130. Size:299K  cystek
mtn5n50e3.pdf

5N50
5N50

Spec. No. : C740E3 Issued Date : 2009.09.14 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 1.5 MTN5N50E3 ID : 4.5A Description The MTN5N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

 0.131. Size:333K  cystek
mtn15n50f3.pdf

5N50
5N50

Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 0.132. Size:319K  cystek
mtn15n50e3.pdf

5N50
5N50

Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 0.133. Size:1635K  goford
g5n50t g5n50f g5n50j g5n50k.pdf

5N50
5N50

G5N50KGOFORDDescription 500V N-CHANNEL ENHANCEMENT MODE POWER MOSFET ApplicationFeaturesR DS(ON)(Max)IVDSS D .@ VGS = 10V DC Motor Control and Class D Amplifier 500V 5A Uninterruptible Power Supply (UPS) 1.4 Fast switching HID 100% avalanche tested Improved dv/dt capability RoHS Compliant & Halogen-Free Package Ordering Informa

 0.134. Size:190K  samhop
sdf05n50 sdp05n50.pdf

5N50
5N50

SDP05N50SDF05N50aS mHop Microelectronics C orp.Ver 2.3N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.500V 5A 1.35 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Ma

 0.135. Size:521K  silikron
ssf5n50d.pdf

5N50
5N50

SSF5N50D Main Product Characteristics: VDSS 500V RDS(on) 1.5 (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.136. Size:234K  inpower semi
fsw25n50a.pdf

5N50
5N50

FSW25N50AN-Channel MOSFET PbLead Free Package and FinishApplications: Uninterruptible Power Supply(UPS)VDSS RDS(ON) (Typ.) ID LCD Panel Power 500V 0.18 25A SMPS Power DC-AC InverterFSW25N50 RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability ImprovedGDSOrdering InformationPART NU

 0.137. Size:745K  blue-rocket-elect
bri5n50.pdf

5N50
5N50

BRI5N50 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency sw

 0.138. Size:979K  blue-rocket-elect
brd5n50.pdf

5N50
5N50

BRD5N50Rev.D May.-2016 DATA SHEET / DescriptionsTO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching

 0.139. Size:229K  crhj
cs15n50 a8r.pdf

5N50
5N50

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.140. Size:231K  crhj
cs15n50f a9r.pdf

5N50
5N50

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.141. Size:124K  china
cs5n50.pdf

5N50

CS5N50 N PD TC=25 74 W 0.59 W/ ID VGS=10V,TC=25 5.0 A ID VGS=10V,TC=100 3.2 A IDM 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.7 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=3A 1.4

 0.142. Size:122K  jdsemi
cm5n50 to220a.pdf

5N50
5N50

RC55MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12 3T

 0.143. Size:125K  jdsemi
cm5n50f.pdf

5N50
5N50

RC55FMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12 1 23

 0.144. Size:123K  jdsemi
cm15n50.pdf

5N50
5N50

RC1N0M55 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12 3

 0.145. Size:140K  jdsemi
cm5n50c.pdf

5N50
5N50

RCM5N50C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS

 0.146. Size:121K  jdsemi
cm5n50c to252.pdf

5N50
5N50

RC55CMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12122 3

 0.147. Size:338K  first silicon
ftk5n50d.pdf

5N50
5N50

SEMICONDUCTORFTK5N50DTECHNICAL DATA4.4A, 500V, 1.5 A KDIM MILLIMETERSLC D_A 6 60 + 0 20N-CHANNEL POWER MOSFET_B 6 10 + 0 20_C 5 34 + 0 30_D 0 70 + 0 20_E 2 70 0 15+B_+F 2 30 0 10G 0 96 MAXH 0 90 MAXHJ_J 1 80 + 0 20DESCRIPTIONE_K 2 30 + 0 10G N_L 0 50 0 10+F F M _+M 0 50 0 10 FTK5N50D is 500V High voltage N-Chan

 0.148. Size:49K  kexin
kdb15n50.pdf

5N50
5N50

SMD Type MOSFETN-Channel SMPS Power MOSFETKDB15N50(FDB15N50)FeaturesTO-263Unit: mmLow Gate Charge Qg results in Simple Drive Requirement+0.24.57-0.2+0.1Improved Gate, Avalanche and High Reapplied dv/dt1.27-0.1RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input Capacitance+0.10.1max1.27-0.1Improved Switching Speed with Low EMI+0.10.81-0.12.

 0.149. Size:928K  magnachip
mdd5n50frh.pdf

5N50
5N50

MDD5N50F N-Channel MOSFET 500V, 4.2 A, 1.55 General Description Features The MDD5N50F uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.2A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.5 @VGS = 10V excellent quality. MDD5N50F is suitable device for Power Supply, Applications PFC and gen

 0.150. Size:770K  magnachip
mdd5n50zrh.pdf

5N50
5N50

MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50Z uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and I = 4.4A @V = 10V D GSexcellent quality. R 1.4 @V = 10V DS(ON) GSMDD5N50Z is suitable device for SMPS, HID and general pur

 0.151. Size:1034K  magnachip
mdf5n50zth mdp5n50zth.pdf

5N50
5N50

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device fo

 0.152. Size:1047K  magnachip
mdf5n50fth mdp5n50fth.pdf

5N50
5N50

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GShigh switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera

 0.153. Size:919K  magnachip
mdd5n50rh.pdf

5N50
5N50

MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4 General Description Features The MDD5N50 uses advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state I = 4.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDD5N50 is suitable device for SMPS, Ballast and general purpose applicatio

 0.154. Size:749K  magnachip
mdf5n50fbth.pdf

5N50
5N50

MDF5N50FB N-Channel MOSFET 500V, 4.5 A, 1.55General Description Features The MDF5N50FB uses advanced MagnaChips MOSFET VDS = 500V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.55 @ VGS = 10V MDF5N50FB is suitable device for SMPS, high Speed Applications switching

 0.155. Size:960K  magnachip
mdis5n50th.pdf

5N50
5N50

MDIS5N50 N-Channel MOSFET 500V, 4.4 A, 1.4General Description Features The MDIS5N50 uses advanced MagnaChips VDS = 500V MOSFET technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and ID = 4.4A @VGS = 10V excellent quality. RDS(ON) 1.4 @VGS = 10V MDIS5N50 is suitable device for SMPS, HID and general

 0.156. Size:1146K  magnachip
mdf5n50bth mdp5n50bth.pdf

5N50
5N50

MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4General Description Features The MDP/F5N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 5.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDP/F5N50B is suitable device for SMPS, HID and Applications general purpose

 0.157. Size:1197K  magnachip
mdp5n50th.pdf

5N50
5N50

MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4 Features General Description V = 500V DSThe MDP5N50 uses advanced Magnachips I = 5.0A @V = 10V D GSMOSFET Technology, which provides low on-state R 1.4 @V = 10V DS(ON) GSresistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and Applications gener

 0.158. Size:397K  bruckewell
ms15n50.pdf

5N50
5N50

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 0.159. Size:419K  bruckewell
msq5n50.pdf

5N50
5N50

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ5N50 Description The MSQ5N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which

 0.160. Size:376K  bruckewell
ms5n50-a.pdf

5N50
5N50

MS5N50-A N-Channel Enhancement Mode Power MOSFET Description The MS5N50-A is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=1

 0.161. Size:900K  bruckewell
msf5n50.pdf

5N50
5N50

MSF5N50 500V N-Channel MOSFET Description The MSF5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 0.162. Size:595K  bruckewell
msu5n50.pdf

5N50
5N50

MSU5N50 500V N-Channel MOSFET Description The MSU5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design Rugged Gate Oxide

 0.163. Size:850K  bruckewell
ms5n50.pdf

5N50
5N50

MS5N50 N-Channel Enhancement Mode Power MOSFET Description The MS5N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150

 0.164. Size:762K  winsemi
wfp5n50.pdf

5N50
5N50

WFP5N50WFP5N50WFP5N50WFP5N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 5A,500V,RDS(on)(Max1.6)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MO SFET is pro du ced using Wi

 0.165. Size:735K  winsemi
sfp5n50.pdf

5N50
5N50

SFP5N50SFP5N50SFP5N50SFP5N50Silicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 5A,500V,RDS(on)(Max 1.6)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Power MOSFET is prod

 0.166. Size:727K  winsemi
wfu5n50.pdf

5N50
5N50

WFU5N50WFU5N50WFU5N50WFU5N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 5A,500V,RDS(on)(Max1.6)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MO SFET is pro du ced using Wi

 0.167. Size:734K  winsemi
wfd5n50.pdf

5N50
5N50

WFD5N50WFD5N50WFD5N50WFD5N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 5A,500V,RDS(on)(Max1.6)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MO SFET is pro du ced using Wi

 0.168. Size:246K  bcdsemi
af15n50.pdf

5N50
5N50

Data Sheet 50V N-Channel MOSFET AF15N50 Features General Description Typ RDS(ON)=14.32m @ VGS=10V, ID=15A This N-Channel MOSFET has been designed Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A specifically to improve the overall efficiency and to RoHS Compliantminimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM

 0.169. Size:145K  hy
hy5n50t.pdf

5N50
5N50

HY5N50T / HY5N50FT 500V / 5A500V, RDS(ON)=1.5W@VGS=10V, ID=2.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

 0.170. Size:455K  jiaensemi
jfux5n50d jfdx5n50d.pdf

5N50
5N50

N- MOS JFUX5N50D(TO-251)/JFDX5N50D(TO-252) RoHS FEATURESLOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLASTELECTRONIC TRANSFORMERSWITCH MODE POWER SUPPLY

 0.171. Size:1363K  jiaensemi
jfam25n50e.pdf

5N50
5N50

JFAM25N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.172. Size:319K  maple semi
sld5n50s2 slu5n50s2.pdf

5N50
5N50

LEAD FREEPbRoHSSLD5N50S2 / SLU5N50S2500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.35@VGS = 10 V( ) ypadvanced planar stripe DMOS technology. - Low gate charge ( typical 10 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide super

 0.173. Size:1128K  maple semi
slp5n50s slf5n50s.pdf

5N50
5N50

LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi

 0.174. Size:395K  pipsemi
ptp15n50 pta15n50.pdf

5N50
5N50

PTP15N50 PTA15N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology500V 0.33 15A RDS(ON),typ.=0.33 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Bran

 0.175. Size:1269K  pipsemi
pta25n50.pdf

5N50
5N50

PTA25N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 210m 25A RDS(ON),typ.=210 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P

 0.176. Size:703K  samwin
swmn15n50d.pdf

5N50
5N50

SW15N50D N-channel Enhanced mode TO-220SF MOSFET TO-220SF BVDSS : 500V Features ID : 15A High ruggedness RDS(ON) : 0.22 Low RDS(ON) (Typ 0.22)@VGS=10V Low Gate Charge (Typ 92nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, Adaptor 1. Gate 2. Drain 3. Source 3 General Description This

 0.177. Size:737K  samwin
swf15n50.pdf

5N50
5N50

SW15N50 N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 500V High ruggedness ID : 15A Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 66nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application: DC-DC,LED,PC 2 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is

 0.178. Size:738K  samwin
swf15n50da.pdf

5N50
5N50

SW15N50DA N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 500V High ruggedness Low RDS(ON) (Typ 0.33)@VGS=10V ID : 15A Low Gate Charge (Typ 57nC) RDS(ON) : 0.33 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This p

 0.179. Size:198K  semihow
hfs5n50s.pdf

5N50
5N50

OCT 2008BVDSS = 500 VRDS(on) typ HFS5N50S ID = 5.0 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area

 0.180. Size:194K  semihow
hfs5n50u.pdf

5N50
5N50

May 2012BVDSS = 500 VRDS(on) typ HFS5N50U ID = 5.0 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area L

 0.181. Size:276K  semihow
hfd5n50s.pdf

5N50
5N50

OCT 2009BVDSS = 500 VRDS(on) typ HFD5N50S / HFU5N50SID = 4.0 A500V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N50S HFU5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC

 0.182. Size:276K  semihow
hfd5n50s hfu5n50s.pdf

5N50
5N50

OCT 2009BVDSS = 500 VRDS(on) typ HFD5N50S / HFU5N50SID = 4.0 A500V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N50S HFU5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC

 0.183. Size:207K  semihow
hfd5n50u.pdf

5N50
5N50

Jan 2014BVDSS = 500 VRDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A500V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (

 0.184. Size:204K  semihow
hfw5n50s hfi5n50s.pdf

5N50
5N50

June 2009BVDSS = 500 VRDS(on) typ = 1.2 HFW5N50S / HFI5N50SID = 5.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N50S HFI5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Saf

 0.185. Size:204K  semihow
hfw5n50s.pdf

5N50
5N50

June 2009BVDSS = 500 VRDS(on) typ = 1.2 HFW5N50S / HFI5N50SID = 5.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N50S HFI5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Saf

 0.186. Size:203K  semihow
hfp5n50s.pdf

5N50
5N50

OCT 2008BVDSS = 500 VRDS(on) typ HFP5N50S ID = 5.0 A500V N-Channel MOSFETTO-220FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RD

 0.187. Size:203K  semihow
hfp5n50u.pdf

5N50
5N50

May 2012BVDSS = 500 VRDS(on) typ HFP5N50U ID = 5.0 A500V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Low

 0.188. Size:287K  semihow
hfd5n50u hfu5n50u.pdf

5N50
5N50

June 2015BVDSS = 500 VRDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A500V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC

 0.189. Size:23K  shaanxi
wvm15n50.pdf

5N50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N50(MTM15N50) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

 0.190. Size:522K  slkor
sl5n50d.pdf

5N50
5N50

SL5N50DN-Channel MOSFETFEATURES R (Max 1.5) @V =10V DS(ON) GS Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units V Drain-Source voltage(V =0) 500 V DSS GSV Gate -Source voltage 30 V GSS I Drain current (conti

 0.191. Size:661K  taitron
msu4d5n50q.pdf

5N50
5N50

500V/4.5A MOSFET (N-Channel) MSU4D5N50Q 500V/4.5A MOSFET (N-Channel) General Description The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. TO-262 Features RDS(ON) 1.5@VGS=10V Single Pul

 0.192. Size:890K  thinkisemi
p5n50c.pdf

5N50
5N50

P5N50CPbP5N50CPb Free Plating Product5 Ampere 500 Volt N-Channel MOSFETFeatures2. Drain RDS(on) (Max 1.5 )@VGS=10VBVDSS = 500V Gate Charge (Typical 18.5nC)RDS(ON) = 1.5 ohm Improved dv/dt Capability 1. Gate High ruggednessID = 5.0A 100% Avalanche Tested 3. SourceGeneral DescriptionTO-220This N-channel en

 0.193. Size:345K  trinnotech
tmd5n50 tmd5n50g tmu5n50 tmu5n50g.pdf

5N50
5N50

TMD5N50/TMU5N50TMD5N50G/TMU5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DI-PAKD-PAKGSDevice Package Marking RemarkTMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

 0.194. Size:354K  trinnotech
tmp5n50sg tmpf5n50sg.pdf

5N50
5N50

TMP5N50SG/TMPF5N50SGVDSS = 550 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen FreeAbs

 0.195. Size:485K  trinnotech
tman15n50.pdf

5N50
5N50

TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 14.2A

 0.196. Size:343K  trinnotech
tmp15n50 tmpf15n50.pdf

5N50
5N50

TMP15N50/TMPF15N50TMP15N50G/TMPF15N50GVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHSTMP15N50G / TMPF15N50G

 0.197. Size:347K  trinnotech
tmp5n50 tmpf5n50.pdf

5N50
5N50

TMP5N50/TMPF5N50TMP5N50G/TMPF5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHST

 0.198. Size:800K  truesemi
tsd5n50mr.pdf

5N50
5N50

TSD5N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 4.5A,500V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 12nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

 0.199. Size:677K  way-on
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf

5N50
5N50

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 0.200. Size:1212K  way-on
wmo5n50d1b.pdf

5N50
5N50

WMO5N50D1B 500V 5A 1.35 N-ch Power MOSFET Description TO-252 WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density D G and high efficiency. And it is very robust S and RoHS compliant. Features Typ.R =1.35@V =10V DS(on) GS 100% avalan

 0.201. Size:1494K  way-on
wmk15n50d1b wml15n50d1b.pdf

5N50
5N50

WMK15N50D1B WML15N50D1B 500V 15A 0.37 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in TAB on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.37@V

 0.202. Size:231K  wuxi china
cs15n50fa9r.pdf

5N50
5N50

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.203. Size:731K  fortior tech
fmd5n50e5.pdf

5N50
5N50

FMD5N50E5 Silicon N-Channel Power MOSFET General Description FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, VDSS 500 V is obtained by the self-aligned planar Technology which reduce ID 5 A the conduction loss, improve switching performance and Trr 85 ns enhance the avalanche energy. The transistor can be used in RDS(ON)Typ 1.25 various power switching circuit

 0.204. Size:403K  convert
cs15n50f cs15n50p.pdf

5N50
5N50

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS

 0.205. Size:4283K  haolin elec
hf25n50 hp25n50.pdf

5N50
5N50

HF25N50,HP25N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinu

 0.206. Size:1853K  haolin elec
hd5n50 hu5n50.pdf

5N50
5N50

June 2017BVDSS = 520 VRDS(on) typ = 1.5 HD5N50 / HU5N50ID = 5.0 A520V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD5N50 HU5N50 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.)

 0.207. Size:4359K  haolin elec
ha25n50.pdf

5N50
5N50

HA25N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinuous Drai

 0.208. Size:1205K  lonten
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf

5N50
5N50

LNC5N50\LND5N50\LNG5N50\LNH5N50Lonten N-channel 500V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 1.6DS(on),maxsuperior switching performance and high avalanche Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate charge

 0.209. Size:925K  cn sinai power
spd5n50g.pdf

5N50
5N50

SPD5N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=5A(Vgs=10V) R max. at 25oC () V =10V 1.5DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd RoHS compliant Configuration single Ap

 0.210. Size:1693K  cn sino-ic
se15n50fra.pdf

5N50
5N50

SE15N50FRA N-Channel Enhancement-Mode MOSFET with FR Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche VDS = 500V Voltage and Current Improved Shoot-Through RDS(ON) = 0.43 @ VGS=10V FOM Simple Drive Requirement Small Package Outline Surface Mount Device

 0.211. Size:642K  cn hmsemi
hm25n50.pdf

5N50
5N50

HM25N50General Description VDSS 500 V HM25N50 the silicon N-channel Enhanced ID 25 A PD(TC=25) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

 0.212. Size:554K  cn hmsemi
hm5n50k hm5n50i.pdf

5N50
5N50

HM5N50K/HM5N50IHM5N50K/HM5N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 500V, RDS(on) = 2.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching

 0.213. Size:500K  cn hmsemi
hm15n50 hm15n50f.pdf

5N50
5N50

HM15N50/HM15N50FHM15N50/HM15N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 15.0A, 500V, RDS(on) = 0.42 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to Fast s witchingminimize o n-state r esistance, pr ovide superior switc

 0.214. Size:274K  inchange semiconductor
5n50-252.pdf

5N50
5N50

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 5N50FEATURESStatic drain-source on-resistance:RDS(on)1.6100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh efficiency switched mode power suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 0.215. Size:251K  inchange semiconductor
aotf5n50.pdf

5N50
5N50

isc N-Channel MOSFET Transistor AOTF5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 0.216. Size:287K  inchange semiconductor
mdp5n50bth.pdf

5N50
5N50

isc N-Channel MOSFET Transistor MDP5N50BTHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.217. Size:300K  inchange semiconductor
fdh15n50.pdf

5N50
5N50

isc N-Channel MOSFET Transistor FDH15N50FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.218. Size:260K  inchange semiconductor
aot5n50.pdf

5N50
5N50

isc N-Channel MOSFET Transistor AOT5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 0.219. Size:211K  inchange semiconductor
fdh45n50f.pdf

5N50
5N50

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FDH45N50FFEATURESWith TO-247 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.220. Size:251K  inchange semiconductor
aotf5n50fd.pdf

5N50
5N50

isc N-Channel MOSFET Transistor AOTF5N50FDFEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.221. Size:321K  inchange semiconductor
mdis5n50th.pdf

5N50
5N50

isc N-Channel MOSFET Transistor MDIS5N50THFEATURESDrain Current : I = 4.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 0.222. Size:265K  inchange semiconductor
aod5n50.pdf

5N50
5N50

isc N-Channel MOSFET Transistor AOD5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 0.223. Size:287K  inchange semiconductor
mdp5n50th.pdf

5N50
5N50

isc N-Channel MOSFET Transistor MDP5N50THFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Другие MOSFET... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BS170 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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