All MOSFET. 5N50 Datasheet

 

5N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 5N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 46 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-262_TO-220F1_TO-252_TO-220F

5N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

5N50 Datasheet (PDF)

1.1. mtv25n50e.pdf Size:280K _motorola

5N50
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTV25N50E/D Advance Information MTV25N50E TMOS E-FET.? Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 25 AMPERES 500 VOLTS The D3PAK package has the capability of housing the largest chip RDS(on) = 0.200 OHM size of any standard, plastic, surface mount power sem

1.2. phx5n50e 1.pdf Size:24K _philips2

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Philips Semiconductors Objective specification PowerMOS transistor PHX5N50E Isolated version of PHP8N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 4 A blocking voltage,

1.3. rej03g1112 h5n5001fmds.pdf Size:206K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.4. rej03g0419 h5n5005plds.pdf Size:154K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.5. rej03g0175 h5n5016pl.pdf Size:153K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.6. rej03g0378 h5n5012p.pdf Size:69K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.7. rej03g1113 h5n5004plds.pdf Size:121K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.8. rej03g1115 h5n5006ldlslmds.pdf Size:111K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.9. rej03g1114 h5n5006fmds.pdf Size:100K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.10. rej03g0397 h5n5006dlds.pdf Size:107K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.11. rej03g1117 h5n5015pds.pdf Size:99K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.12. rej03g1116 h5n5007pds.pdf Size:99K _renesas

5N50
5N50

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.13. fqp5n50c fqpf5n50c.pdf Size:879K _fairchild_semi

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TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switchi

1.14. fdd5n50f.pdf Size:752K _fairchild_semi

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December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially

1.15. fqb5n50cf.pdf Size:700K _fairchild_semi

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May 2006 TM FRFET FQB5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- Fast swi

1.16. fdd5n50nz.pdf Size:548K _fairchild_semi

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November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to

1.17. fdp5n50nzf fdpf5n50nzf.pdf Size:256K _fairchild_semi

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February 2010 ?TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET? 500V, 4.2A, 1.75? Features Description RDS(on) = 1.57? ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has be

1.18. fdh15n50 fdp15n50 fdb15n50.pdf Size:194K _fairchild_semi

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August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyback Conve

1.19. fdd5n50u.pdf Size:645K _fairchild_semi

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December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especia

1.20. fdp5n50 fdpf5n50.pdf Size:265K _fairchild_semi

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December 2007 UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially

1.21. fdd5n50.pdf Size:503K _fairchild_semi

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December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to

1.22. fqpf5n50cf.pdf Size:657K _fairchild_semi

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TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- Fast switching m

1.23. fdp5n50f fdpf5n50ft.pdf Size:427K _fairchild_semi

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December 2007 UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has be

1.24. fdd5n50nzf.pdf Size:564K _fairchild_semi

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November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailore

1.25. fqb5n50c fqi5n50c.pdf Size:945K _fairchild_semi

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October 2008 QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fa

1.26. fdp5n50nzu fdpf5n50nzu.pdf Size:702K _fairchild_semi

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February 2010 ?TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET? 500V, 3.9A, 2.0? Features Description RDS(on) = 1.7? ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance technology has bee

1.27. fdp5n50u fdpf5n50ut.pdf Size:224K _fairchild_semi

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November2009 TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been

1.28. fqd5n50c fqu5n50c.pdf Size:664K _fairchild_semi

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October 2008 QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

1.29. fdp5n50nz fdpf5n50nz.pdf Size:247K _fairchild_semi

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March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5? Features Description RDS(on) = 1.38? (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has been especially

1.30. fdpf5n50t.pdf Size:580K _fairchild_semi

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November 2013 FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Ω Features Description • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 5 pF) provi

1.31. fqd5n50c.pdf Size:664K _fairchild_semi

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October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

1.32. fdh45n50f.pdf Size:513K _fairchild_semi

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November 2013 FDH45N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 45 A, 120 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better swi

1.33. fqpf5n50c.pdf Size:879K _fairchild_semi

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TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

1.34. irfib5n50l.pdf Size:517K _international_rectifier

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PD - 94522 SMPS MOSFET IRFIB5N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID l Switch Mode Power Supply (SMPS) 500V 0.67? 73ns 4.7A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness TO-220 Full-Pak l Fully Characteriz

1.35. irfps35n50l.pdf Size:123K _international_rectifier

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PD- 94227 IRFPS35N50L SMPS MOSFET Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.125? 34A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characte

1.36. irfib5n50lpbf.pdf Size:197K _international_rectifier

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PD - 95390 IRFIB5N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 0.67? 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate cha

1.37. irfps35n50lpbf.pdf Size:174K _international_rectifier

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PD- 95140 IRFPS35N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 0.125? 170ns 34A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate cha

1.38. ixfk33n50 ixfk35n50.pdf Size:38K _ixys

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VDSS ID25 RDS(on) HiPerFETTM IXFK33N50 500 V 33 A 0.16 W Power MOSFETs IXFK35N50 500 V 35 A 0.15 W N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated, High dv/dt, Low trr Preliminary data TO-264 AA Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V G VGS Continuous ±20 V D (TAB) D S VGSM Transient ±30 V ID

1.39. ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf Size:121K _ixys

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VDSS ID25 RDS(on) trr HiPerFETTM Power MOSFET IXFN 55N50 500V 55A 80mΩ 250ns IXFN 50N50 500V 50A 100mΩ 250ns IXFK 55N50 500V 55A 80mΩ 250ns Single Die MOSFET IXFK 50N50 500V 50A 100mΩ 250ns Preliminary data sheet TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFN IXFK IXFK IXFN 55N50 50N50 55N50 50N50 VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C

1.40. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

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Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 ? ? RDS(on) ? 480m? ? ? ? ? ? ? FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V G (TAB) D VDGR TJ = 25C to 150C, RGS = 1M? 500 V S VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient 30 V ID25 TC = 25C15 A I

1.41. ixfx50n50 ixfx55n50.pdf Size:94K _ixys

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VDSS ID25 RDS(on) HiPerFETTM ? IXFX 50N50 500 V 50 A 100 m? ? ? ? Power MOSFETs ? IXFX 55N50 500 V 55 A 80 m? ? ? ? ? trr ? ? 250 ns ? ? Single Die MOSFET Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 2

1.42. ixfr50n50 ixfr55n50.pdf Size:75K _ixys

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VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFR 50N50 500 V 43 A 100 mΩ Ω Ω Ω ISOPLUS247TM Ω IXFR 55N50 500 V 48 A 90 mΩ Ω Ω Ω (Electrically Isolated Back Surface) ≤ trr ≤ ≤ 250 ns ≤ ≤ Single Die MOSFET Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V G VGS

1.43. ixfk55n50 ixfx55n50 ixfn55n50.pdf Size:577K _ixys

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VDSS = 500 V IXFK 55N50 HiPerFETTM ID25 = 55 A IXFX 55N50 Power MOSFET ? RDS(on) = 90m? ? ? ? IXFN 55N50 ? 250 ns trr ? ? ? ? Single Die MOSFET Symbol Test Conditions Maximum Ratings PLUS247(IXFX) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C 500 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) G C ID25 TC = 25C55 A E IDM TC = 25C, pulse width limited by TJ

1.44. ndf05n50z ndp05n50z ndd05n50z.pdf Size:144K _onsemi

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NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features http://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 2.2 A 100% Avalanche Tested 500 V 1.5 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) D (2) Rating Sy

1.45. 5n50k.pdf Size:209K _utc

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UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting 1 UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the TO-220F requirements of the minimum on-state resistance and perfect switching performance. It also can wi

1.46. 5n50.pdf Size:217K _utc

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UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220F TO-262 The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It al

1.47. 15n50.pdf Size:232K _utc

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UNISONIC TECHNOLOGIES CO., LTD 15N50 Power MOSFET 15A, 500V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTC’s 1 advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and TO-220F2 superior switching performance. It also can withstand high energy pulse in

1.48. ssq5n50.pdf Size:485K _secos

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SSQ5N50 4.5A, 500V, RDS(ON) 1500m? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P D FEATURES C ? Low RDS(on) Technology. B ? Low thermal impedance. R T ? Fast switching speed. A E S G APPLICATIONS F I ? Electronic ballast. H ? Electronic transformer J K ? Switch mode powe

1.49. kf5n50pz.pdf Size:401K _kec

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KF5N50PZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A 9.9 0.2 B B

1.50. kf15n50n.pdf Size:63K _kec

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KF15N50N SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode _ A + 15.60 0.20 _ B 4.80 + 0.20 power supplies. _ C 1

1.51. kf5n50dz-iz.pdf Size:404K _kec

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KF5N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ele

1.52. kf5n50dz-ds.pdf Size:382K _kec

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KF5N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ba

1.53. kf5n50f.pdf Size:395K _kec

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KF5N50P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power

1.54. kf5n50d dz.pdf Size:380K _kec

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KF5N50D/DZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mode powe

1.55. kf5n50fza-fsa.pdf Size:716K _kec

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KF5N50FZA/FSA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 50

1.56. kf5n50ds.pdf Size:382K _kec

5N50
5N50

KF5N50DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic balla

1.57. kf5n50ps-fs.pdf Size:90K _kec

5N50
5N50

KF5N50PS/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS G _ + electronic ballast and switch

1.58. h05n50.pdf Size:45K _hsmc

5N50
5N50

Spec. No. : MOS200601 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.20 MICROELECTRONICS CORP. Page No. : 1/4 H05N50 Series Pin Assignment H05N50 Series Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N - Channel MOSFETs provide the designer with the best combination of fast switching, r

1.59. aotf5n50.pdf Size:159K _aosemi

5N50
5N50

AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 5A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.5Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wi

1.60. aot5n50.pdf Size:159K _aosemi

5N50
5N50

AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 5A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.5Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wi

1.61. aotf5n50fd.pdf Size:347K _aosemi

5N50
5N50

AOTF5N50FD 500V, 5A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150℃ The AOTF5N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) <1.8Ω popular AC-DC applications. By providing low RDS(on), Ciss and Crss

1.62. aod5n50.pdf Size:284K _aosemi

5N50
5N50

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high 600V@150℃ voltage MOSFET process that is designed to deliver high VDS levels of performance and robustness in popular AC-DC ID (at VGS=10V) 5A applications.By providing low RDS(on), Ciss and Crss along < 1.6Ω RDS(ON) (at VGS=10V) with guaranteed avalanch

1.63. ap05n50ej-hf.pdf Size:63K _a-power

5N50
5N50

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 500V D Ў Fast Switching Characteristic RDS(ON) 1.6? G Ў Simple Drive Requirement ID 5A Ў RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest p

1.64. ap05n50i.pdf Size:60K _a-power

5N50
5N50

AP05N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.4? Ў Simple Drive Requirement ID 5.0A G S Description AP05N50 provide high blocking voltage to overcome voltage surge G and sag in the toughest power system with the best combination of fast D TO-220CFM

1.65. ap05n50ib-hf.pdf Size:97K _a-power

5N50
5N50

AP05N50IB-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.4? Ў Simple Drive Requirement ID 5.0A G Ў RoHS Compliant & Halogen-Free S Description AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best

1.66. ap05n50eh.pdf Size:196K _a-power

5N50
5N50

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 500V D ▼ Fast Switching Characteristic RDS(ON) 1.6Ω G ▼ Simple Drive Requirement ID 5A ▼ RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo

1.67. ap05n50p.pdf Size:153K _a-power

5N50
5N50

AP05N50P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.4? Ў Simple Drive Requirement ID 5.0A G S Description G The AP05N50 provide high blocking voltage to overcome voltage surge TO-220(P) D S and sag in the toughest power system with the best combination

1.68. ap05n50i-hf.pdf Size:60K _a-power

5N50
5N50

AP05N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test D BVDSS 500V ▼ Fast Switching Characteristic RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID 5.0A G ▼ RoHS Compliant & Halogen-Free S Description AP05N50 provide high blocking voltage to overcome voltage surge G and sag in the toughest power system wit

1.69. ap05n50s-hf.pdf Size:95K _a-power

5N50
5N50

AP05N50S-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.4? Ў Simple Drive Requirement ID 5.0A G Ў RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power system with

1.70. ap05n50eh-hf.pdf Size:63K _a-power

5N50
5N50

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 500V D Ў Fast Switching Characteristic RDS(ON) 1.6? G Ў Simple Drive Requirement ID 5A Ў RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest p

1.71. ap05n50ej.pdf Size:161K _a-power

5N50
5N50

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 500V D ▼ Fast Switching Characteristic RDS(ON) 1.6Ω G ▼ Simple Drive Requirement ID 5A ▼ RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo

1.72. ap05n50h-hf.pdf Size:59K _a-power

5N50
5N50

AP05N50H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.4? Ў Simple Drive Requirement ID 5.0A G Ў RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest pow

1.73. ap05n50ei-hf.pdf Size:59K _a-power

5N50
5N50

AP05N50EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 500V D Ў Fast Switching Characteristic RDS(ON) 1.6? G Ў Simple Drive Requirement ID 5A Ў RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power system with

1.74. sif5n50c 1.pdf Size:380K _sisemi

5N50
5N50

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANN

1.75. sif5n50c.pdf Size:340K _sisemi

5N50
5N50

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANNEL POWER MOSFET SIF5N50C N- MOS / N-CHANN

1.76. mtn15n50e3.pdf Size:319K _cystek

5N50
5N50

Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp. Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

1.77. mtn15n50f3.pdf Size:333K _cystek

5N50
5N50

Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp. Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

1.78. mtn5n50i3.pdf Size:329K _cystek

5N50
5N50

Spec. No. : C740I3 Issued Date : 2010.06.24 CYStech Electronics Corp. Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) max. : 1.6Ω MTN5N50I3 ID : 4.5A Description The MTN5N50I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

1.79. mtn5n50fp.pdf Size:357K _cystek

5N50
5N50

Spec. No. : C740FP Issued Date : 2011.04.12 CYStech Electronics Corp. Revised Date : 2012.01.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) max. : 1.6Ω MTN5N50FP ID : 4.5A Description The MTN5N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

1.80. mtn5n50j3.pdf Size:327K _cystek

5N50
5N50

Spec. No. : C740J3 Issued Date : 2010.06.30 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) max. : 1.6Ω MTN5N50J3 ID : 4.5A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications •

1.81. mtn15n50fp.pdf Size:282K _cystek

5N50
5N50

Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

1.82. mtn5n50e3.pdf Size:299K _cystek

5N50
5N50

Spec. No. : C740E3 Issued Date : 2009.09.14 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 1.5Ω MTN5N50E3 ID : 4.5A Description The MTN5N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

1.83. sdf05n50 sdp05n50.pdf Size:190K _samhop

5N50
5N50

SDP05N50 SDF05N50 a S mHop Microelectronics C orp. Ver 2.3 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 500V 5A 1.35 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Ma

1.84. ssf5n50d.pdf Size:521K _silikron

5N50
5N50

 SSF5N50D Main Product Characteristics: VDSS 500V RDS(on) 1.5Ω (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.85. fsw25n50a.pdf Size:234K _inpower_semi

5N50
5N50

FSW25N50A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Uninterruptible Power Supply(UPS) VDSS RDS(ON) (Typ.) ID • LCD Panel Power 500V 0.18 Ω 25A • SMPS Power • DC-AC Inverter FSW25N50 • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • ESD Capability Improved G D S Ordering Information PART NU

1.86. brd5n50.pdf Size:1013K _blue-rocket-elect

5N50
5N50

BRD5N50(BRCS5N50D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.87. bri5n50.pdf Size:694K _blue-rocket-elect

5N50
5N50

BRI5N50(BRCS5N50I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高效 DC/DC 转换和功率开关。 These devices are well suited for high effic

1.88. cs15n50f a9r.pdf Size:231K _crhj

5N50
5N50

Silicon N-Channel Power MOSFET R ○ CS15N50F A9R General Description: VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25℃) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.89. cs15n50 a8r.pdf Size:229K _crhj

5N50
5N50

Silicon N-Channel Power MOSFET R ○ CS15N50 A8R General Description: VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.90. cm5n50f.pdf Size:125K _jdsemi

5N50
5N50

R C55F MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯 等功率开关电路 2 .主要特点 开关速度快 1 通态电阻小,输入电容小 2 3 .封装

1.91. cm15n50.pdf Size:123K _jdsemi

5N50
5N50

R C1N0 M55 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯、 跑步机等功率开关电路 2 .主要特点 开关速度快 驱动简单,可并联使用 3 .封装

1.92. cm5n50c.pdf Size:140K _jdsemi

5N50
5N50

R CM5N50C 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.93. cm5n50 to220a.pdf Size:122K _jdsemi

5N50
5N50

R C55 MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯 等功率开关电路 2 .主要特点 开关速度快 通态电阻小,输入电容小 3 .封装外形 T

1.94. cm5n50c to252.pdf Size:121K _jdsemi

5N50
5N50

R C55C MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 2 主要用于电子镇流器、节能灯 等功率开关电路 1 2 2 .主要特点 开关速度快 通态电阻小,输入电容小 3 .封

1.95. ftk5n50d.pdf Size:338K _first_silicon

5N50
5N50

SEMICONDUCTOR FTK5N50D TECHNICAL DATA 4.4A, 500V, 1.5Ω A K DIM MILLIMETERS L C D _ A 6 60 + 0 20 N-CHANNEL POWER MOSFET _ B 6 10 + 0 20 _ C 5 34 + 0 30 _ D 0 70 + 0 20 _ E 2 70 0 15 + B _ + F 2 30 0 10 G 0 96 MAX H 0 90 MAX H J _ J 1 80 + 0 20 DESCRIPTION E _ K 2 30 + 0 10 G N _ L 0 50 0 10 + F F M _ + M 0 50 0 10 FTK5N50D is 500V High voltage N-Chan

Datasheet: UF450 , UF460 , 1N50 , 1N50Z , 2N50 , 3N50 , 3N50Z , 4N50 , IRFP4332 , 5N50K , 6N50 , 7N50 , 8N50 , 1N40 , 2N40 , 3N40 , 4N40 .

 


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