UNISONIC TECHNOLOGIES CO., LTD 2N40 Preliminary Power MOSFET 2 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with a minimum on-state resistance, stable offstate characteristics and superior switching performance. It also can withstand high energy pulse in the avalanc

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2N40E/DDesigner's Data SheetMTD2N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 2.0 AMPERES400 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 3.5 OHMwithstand high energy in the avalanc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4036/DGeneral Purpose TransistorsPNP Silicon2N4036COLLECTOR2N403732BASE1EMITTERMAXIMUM RATINGSRating Symbol 2N4036 2N4037 UnitCollectorEmitter Voltage VCEO 65 40 Vdc 321CollectorBase Voltage VCBO 90 60 VdcCASE 7904, STYLE 1EmitterBase Voltage VEBO 7.0 7.0 VdcTO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB2N40E/DDesigner's Data SheetMTB2N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 2.0 AMPERES400 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 3.8 OHMthan any existing surface mou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD2N40E/DDesigner's Data SheetMTD2N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 2.0 AMPERES400 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 3.5 OHMwithstand high energy in the avalanc

Philips Semiconductors Product specification PowerMOS transistor PHP2N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.5 Aoff-state characteristics, fast Ptot Total power dissipati

Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.5 Ablocking voltage, fast switching and Ptot Total power d

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N4031; 2N4033PNP medium power transistors1997 May 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium power transistors 2N4031; 2N4033FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max.

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N4036PNP switching transistor1997 Jun 19Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistor 2N4036FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 ba

Philips Semiconductors Objective specification PowerMOS transistor PHX2N40E Isolated version of PHP4N40EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a fullpack, plastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.4 Ablocking volt

2N4033SMALL SIGNAL PNP TRANSISTORDESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNPtransistor in Jedec TO-39 metal case primaryintended for large signal, low noise industrialapplications.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) -80 VVCEO Collector-Emitter Voltage (IB = 0) -80 VV Emi

October 2013FQP2N40N-Channel QFET MOSFET400 V, 1.8 A, 5.8 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V, ID = 0.9 Aproduced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) MOSFET technology has been especially ta

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 400V, RDS(on) = 5.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has bee

April 2000TMQFETQFETQFETQFETFQD2N40 / FQU2N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.4A, 400V, RDS(on) = 5.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technolog

2N40362N4037www.centralsemi.comDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N4036 2N4037 UNITSCollector-Base Voltage VCBO 90 60 VCollector-Emitt

NDD02N40, NDT02N40N-Channel Power MOSFET400 V, 5.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)400 V 5.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 400 VD (2)Gate-to-S

FQP2N40N-Channel QFET MOSFET400 V, 1.8 A, 5.8 Features 1.8 A, 400 V, RDS(on) = 5.8 (Max.) @ VGS = 10 V,DescriptionID = 0.9 AThis N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 4.0 nC)is produced using ON Semiconductors proprietary Low Crss (Typ. 3.0 pF)planar stripe and DMOS technology. This advanced Fast SwitchingMOSFET technolog

UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 12N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It1als

2N4000Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N4028Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX

2N4001Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 100V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N4027Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 80V 0.48 (0.019)0.41 (0.016)dia.IC = 1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTORS 2N4030, 2N40312N4032, 2N4033TO-39Metal Can Package2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N4030,32 2N4031, 33 UNITSVCEOCollector Emitter

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EXPITAXIAL TRANSISTOR.2N4037TO-39Metal Can PackageMEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEO(sus) *Collector Emitter Voltage 40 VVCBOCollector Base Voltage 60 V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR 2N4036TO-39General Purpose TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 65 VCollector -Base Voltage VCBO 90 VEmitter Base Voltage VEBO 7.0 VBase Current IB 0.5 ACollector Current -Continuous IC 1.0 APowe

SEMICONDUCTOR KMB012N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and Power LC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70 +

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/431 DEVICES LEVELS 2N4091 MQ = JAN Equivalent 2N4092 MX = JANTX Equivalent 2N4093 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 JAN2N4033UA JANTX2N4033UB JANTXVJANS

TECHNICAL DATA N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 Devices Qualified Level JANTX 2N4091 2N4092 2N4093 JANTXV ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V -40 V GSDrain-Source Voltage V 40 V DSDrain-Gate Voltage VDG 40 V Gate Current I 10 mAdc G(1)Power Dissipa

2N4003K3 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET10.5 AMPERES GATEP b Lead(Pb)-Free*DRAIN SOUCE VOLTAGE* Gate 30 VOLTAGE PretectionFeatures: DiodeSOURCE 2* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.* Low Gate Charge for Fast Switching.3* ESD Protected Gate.* Minimum Breakdown Voltage Rating of 30V.12

FM120-M WILLASTHRU2N4003NLT1Small Signal MOSFET 30V,0.56A, Single, SOT-23FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in ord

AOT12N40400V,11A N-Channel MOSFETGeneral Description Product Summary VDS500V@150The AOT12N40 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AP02N40H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP02N40 series are from Advanced Power innovated design andsilicon process technology to

AP02N40H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP02N40 uses rugged design with the best combination of fastswitching and cost-effecti

AP02N40PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AGSDescriptionGAP02N40 uses rugged design with the best combination of fastTO-220(P)DSswitching and cost-effectiveness.The TO-220 package is widely

AP02N40K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5.5 Simple Drive Requirement ID 0.45AG RoHS Compliant & Halogen-FreeSDDescriptionAP02N40 uses rugged design with the best combination of fastSswitching and cost-effectiveness.DG

AP02N40I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionAP02N40 uses rugged design with the best combination of fastGswitching and cost-effectiveness. DTO-220CF

MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=400V typically @ Tj=150C Low On

www.DataSheet.co.krDatasheet pdf - http://www.DataSheet4U.net/

SW2N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-251S BVDSS : 400V TO-252 ID : 2A High ruggedness Low RDS(ON) (Typ 2.8)@VGS=10V RDS(ON) : 2.8 Low Gate Charge (Typ 6.8nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description

SW2N40D N-channel Enhanced mode TO-92/SOT223 MOSFET Features SOT223 TO-92 BVDSS : 400V ID : 2A High ruggedness Low RDS(ON) (Typ 2.8)@VGS=10V RDS(ON) : 2.8 Low Gate Charge (Typ 7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:DC-DC,LED 3 3 1 1. Gate 2. Drain 3. Source General Description 3 T

TMT2N40GVDSS = 440 V @TjmaxFeaturesID = 2A Low gate chargeRDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC QualificationDDSGDGSDevice Package MarkingTMT2N40G SOT223 TMT2N40GAbsolute Maximum Ra

TMD2N40/TMU2N40TMD2N40G/TMU2N40GVDSS = 440 V @TjmaxFeaturesID = 2A Low gate chargeRDS(on) = 3.4 W(max) @ VGS= 10 V 100% avalanche testedRDS(on) = 2.75 W(typ) @ VGS= 10 V Improved dv/dt capability RDS(on) = 2.80 W(typ) @ VGS= 7.5 V RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD2N40 /

isc Silicon NPN Power Transistor 2N4070DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc N-Channel MOSFET Transistor AOT12N40FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.59(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp