6N40 - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC s perfect planar stripe, DMOS technology to provide customers with superior switching performance and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and

HGTP6N40E1D, S E M I C O N D U C T O R HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 6A, 400V and 500V EMITTER Latch Free Operation COLLECTOR TFALL

HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 6A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1.0 s GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance HGTD6N40E1S, HGTD6N50E1S Applications JEDEC TO

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW16N40E/D Designer's Data Sheet MTW16N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 16 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provi

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW16N40E/D Designer's Data Sheet MTW16N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 16 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provi

SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU Power Management Switch Applications Unit mm 2.1 0.1 High-Speed Switching Applications 1.7 0.1 4 V drive N-ch 2-in-1 1 6 Low ON-resistance Ron = 182m (max) (@VGS = 4 V) 2 5 Ron = 122m (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common)

October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especiall

November 2013 FQB6N40C N-Channel QFET MOSFET 400 V, 6 A, 1.0 Description Features These N-Channel enhancement mode power field effect 6 A, 400 V, RDS(on) = 1.0 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 3 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 16nC) technology has been especially tailored to min

February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description 6A, 400V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typi

April 2000 TM QFET QFET QFET QFET FQD6N40 / FQU6N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.2A, 400V, RDS(on) = 1.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technolog

February 2008 UniFETTM FDP26N40 / FDPF26N40 tm N-Channel MOSFET 400V, 26A, 0.16 Features Description RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 48nC) stripe, DMOS technology. Low Crss ( Typ. 30pF) This advanced technology h

SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.0 - Low Input Capacitance (Ciss) Qg max. (nC) 18 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 4 O

SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.0 - Low Input Capacitance (Ciss) Qg max. (nC) 18 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness Qgd (nC) 4 - Avalanche Energy Rated (UIS) Conf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FQD6N40C N-Channel QFET MOSFET 400 V, 4.5 A, 1.0 Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar 4.5 A, 400 V, RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 16 nC) technology has been especially tailored to reduce on-st

HGTP6N40E1D, S E M I C O N D U C T O R HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 6A, 400V and 500V EMITTER Latch Free Operation COLLECTOR TFALL

SSF6N40D Main Product Characteristics VDSS 400V RDS(on) 0.85 (typ.) ID 5.5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

R C64C MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 400V N-Channel VDMOS RoHS 1 2 3 TO-2

R C64 MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 400V N-Channel VDMOS RoHS 1 2 3 TO-22

Bruckewell Technology Corp., Ltd. http //www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MSF6N40 Description The MSF6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally prefer

MS6N40 N-Channel Enhancement Mode Power MOSFET Description The MS6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150

MSF6N40 N-Channel Enhancement Mode Power MOSFET Description The MSF6N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

BL6N40 Power MOSFET 1 Description Step-Down Converter BL6N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para

PSA06N40 PSP06N40 400V N-ch Planar MOSFET General Features BVDSS RDS(ON),Typ. ID RoHS Compliant 400V 0.78 6.0A RDS(ON),typ.=0.78 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power Ordering Information Part Number Package Brand PSP06N40 TO-220 PSA06N40 TO-220F Absolute Maximum Ra

SemiWell Semiconductor SFP6N40 N-Channel MOSFET Features RDS(ON) Max 1.0 ohm at VGS = 10V Gate Charge ( Typical 18nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM26N40(MTM26N40E) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of pow

FIR6N40FG 400V N-Channel MOSFET -T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=22nC (Typ.). BVDSS=400V,ID=6A G RDS(on) 1.0 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly

isc N-Channel MOSFET Transistor FDP26N40 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

AP6N40D 400V N-Channel Enhancement Mode MOSFET Description The AP6N40D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera