UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION 1The UTC 15N06 uses advanced trench technology to provide TO-220Fexcellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES TO-252* RDS(ON)

isc N-Channel MOSFET Transistor 15N06FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch regulatorsSwitching converters motor drivers and relay drivers

STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD15N06VL/DDesigner's Data SheetMTD15N06VLTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.085 OHMtance area product about onehalf that of sta

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VL/DDesigner's Data SheetMTP15N06VLTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more tha

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB15N06E/DDesigner's Data SheetMTB15N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 15 AMPERESRDS(on) = 0.12 OHMThe D2PAK package has the capability of housing a larger die60 VOLTSthan any existing surface mo

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD15N06VL/DDesigner's Data SheetMTD15N06VLTMOS VPower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.085 OHMtance area product about onehalf that of sta

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB15N06E/DDesigner's Data SheetMTB15N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 15 AMPERESRDS(on) = 0.12 OHMThe D2PAK package has the capability of housing a larger die60 VOLTSthan any existing surface mo

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VDesigner's Data SheetMTP15N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD15N06V/DDesigner's Data SheetMTD15N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.12 OHMtance area product about o

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB15N06V/DDesigner's Data SheetMTB15N06VTMOS VPower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 15 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.12 OHMarea product about onehalf that of standard

Philips Semiconductors Product specification PowerMOS transistor PHX15N06E Isolated version of PHP20N06EGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The VDS Drain-source voltage 60 Vdevice is intended for use in ID Drain current (DC) 13 ASwitched Mode Power Supplies Pto

Philips Semiconductors Product specification PowerMOS transistor PHP15N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 15 ASwitched Mode Power Supplies Ptot Total power dissipation 60 W(SMPS), mo

STD15N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06 60 V

STP15N06LSTP15N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP15N06L 60 V

STP15N06LSTP15N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP15N06L 60 V

July 2009FDMC15N06N-Channel MOSFET 55V, 15A, 0.090Features Description RDS(on) = 0.075 ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology 100% Avalanche Testedachieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device

RSQ015N06 Nch 60V 1.5A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 60V(5) (4) RDS(on) (Max.)290mW(1) ID1.5A(2) PD1.25W(3) lFeatures lInner circuit(1) Drain 1) Low on - resistance.(2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant

4V Drive Nch MOSFET RSQ015N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.85 1.90.95 0.95 0.7(6) (5) (4) Features 1) Low On-resistance. 0~0.12) Small Surface Mount Package (TSMT6). (1) (2) (3)1pin mark0.160.4Abbreviated symbol : PX Application Inner circuit Switching (6) (5) (4)2 Packaging specifications Package T

Data Sheet4V Drive Nch MOSFET RSF015N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTUMT3Features1) Built-in G-S Protection Diode.2) Small Surface Mount Package (TUMT3).3) Low voltage drive. (4V) Abbreviated symbol : PX ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (p

SUD15N06-90LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)AvailableD 175_C Maximum Junction0.065 @ VGS = 10 V 15 Temperature60600.090 @ VGS = 4.5 V 14DTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD15N06-90LSUD15N06-9

SQD15N06-42Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARYd TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.042 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.060 Package with Low Thermal ResistanceID (A) 15 Material categorization: Configuration Single

IPD15N06S2L-64OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 64mDS(on),max Automotive AEC Q101 qualifiedI 19 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

NTD15N06Power MOSFET15 Amps, 60 VoltsN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.15 AMPERES60 VOLTSFeaturesRDS(on) = 76 mW (TYP) Pb-Free Packages are AvailableN-ChannelApplicationsD Power Supplies Converters Power Motor Controls

NTD15N06LPower MOSFET15 Amps, 60 Volts, Logic LevelN-Channel DPAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in15 AMPERESpower supplies, converters and power motor controls and bridge60 VOLTScircuits.RDS(on) = 85 mW (TYP)FeaturesN-Channel Pb-Free Packages are AvailableDApplications Power Supplies ConvertersG Po

RFD15N06LE, RFD15N06LESMData Sheet April 1999 File Number 4079.115A, 60V, 0.065 Ohm, ESD Rated, Logic FeaturesLevel, N-Channel Power MOSFETs 15A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI circuits, gives optimumutilization of silicon,

RFP15N05L, RFP15N06LData Sheet July 1999 File Number 1558.315A, 50V and 60V, 0.140 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 15A, 50V and 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.140power field effect transistors designed for applications such Design Optimized for 5V Gate Drivesas switching regulators, switching converters, motor driv

N N-CHANNEL IGBT R TT015N060EQ MAIN CHARACTERISTICS Package IC 15 A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters Motor Control FEATURES Low gate charge Trench FS , Trench FS Tec

N N-CHANNEL IGBT RJT015N065FED MAIN CHARACTERISTICS Package IC 15 A VCES 650V Vcesat-typ 1.6V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,

N N-CHANNEL IGBT RJT015N065FED/SED/CED MAIN CHARACTERISTICS Package IC 15 A VCES 650V VCESAT-TY 1.6V VGE=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge

Shantou Huashan Electronic Devices Co.,Ltd. HFP15N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 15A, 60V(See Note), RDS(on)

Green Product BLQM15N06L 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLQM15N06L uses advanced trench technology to V = 60V,I = DS D 50A R

SW15N06V N-channel Enhanced mode SOP-8 MOSFET Features BVDSS : 60V SOP-8 D High ruggedness D ID : 15A D Low RDS(ON) (Typ 8.5m)@VGS=4.5V D RDS(ON) : 8.5m@VGS=4.5V (Typ 7.5m)@VGS=10V G Low Gate Charge (Typ 79nC) S 7.5m@VGS=10V S Improved dv/dt Capability S 100% Avalanche Tested G(4) D(5,6,7,8) D Application:DC

Datasheet 15A 650V Trench Fieldstop IGBT with anti-parallel diode SRE15N065FSUDJ General Description Symbol The SRE15N065FSUDJ is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE15N065FSUDJ is available in TO-220FTO-220C and TO-263

Datasheet 15A 600V Trench Fieldstop IGBT with anti-parallel diode SRE15N060FSUDE General Description Symbol The SRE15N060FSUDE is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE15N060FSUDE package is TO-220F. Figure 1 Symbol of SRE15N0

DAC015N065Z2Silicon Carbide Enhancement Mode MOSFETVDSS 650VFeaturesI 120AD(@25 ) RDS(ON) 15m TO-247-4L Benefits

TSB15N06A Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pac

TSP15N06A Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pac

isc N-Channel MOSFET Transistor IPD15N06S2L64FEATURESDrain Current : I = 19A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 64m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.