All MOSFET. 15N06 Datasheet

 

15N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 15N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 230 pF

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO-220, SOP-8, TO-252, TO-220F

15N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

15N06 Datasheet (PDF)

1.1. sqd15n06-42l.pdf Size:176K _update

15N06
15N06

SQD15N06-42L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARYd • TrenchFET® Power MOSFET VDS (V) 60 • 100 % Rg and UIS Tested RDS(on) () at VGS = 10 V 0.042 • AEC-Q101 Qualified RDS(on) () at VGS = 4.5 V 0.060 • Package with Low Thermal Resistance ID (A) 15 • Material categorization:  Configuration Single

1.2. rsq015n06tr.pdf Size:618K _update_mosfet

15N06
15N06

RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 60V (5) (4) RDS(on) (Max.) 290mW (1) ID 1.5A (2) PD 1.25W (3) lFeatures lInner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant

 1.3. rfm15n05l rfm15n06l.pdf Size:89K _update_mosfet

15N06
15N06



1.4. ntd15n06l-001.pdf Size:224K _update-mosfet

15N06
15N06

NTD15N06L Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel DPAK http://onsemi.com Designed for low voltage, high speed switching applications in 15 AMPERES power supplies, converters and power motor controls and bridge 60 VOLTS circuits. RDS(on) = 85 mW (TYP) Features N-Channel • Pb-Free Packages are Available D Applications • Power Supplies • Converters G • Po

 1.5. ntd15n06-001.pdf Size:223K _update-mosfet

15N06
15N06

NTD15N06 Power MOSFET 15 Amps, 60 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in http://onsemi.com power supplies, converters and power motor controls and bridge circuits. 15 AMPERES 60 VOLTS Features RDS(on) = 76 mW (TYP) • Pb-Free Packages are Available N-Channel Applications D • Power Supplies • Converters • Power Motor Controls

1.6. mtb15n06v.pdf Size:274K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06V/D Designer's? Data Sheet MTB15N06V TMOS V? Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresistance RDS(on) = 0.12 OHM area product about onehalf that of standard MOSFETs. This n

1.7. mtb15n06erev1.pdf Size:231K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's? Data Sheet MTB15N06E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mount package

1.8. mtd15n06vlrev2.pdf Size:179K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD15N06VL/D Designer's? Data Sheet MTD15N06VL TMOS V? Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.085 OHM tance area product about onehalf that of standard MOSFETs.

1.9. mtb15n06e.pdf Size:202K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's? Data Sheet MTB15N06E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mount package

1.10. mtd15n06v.pdf Size:218K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD15N06V/D Designer's? Data Sheet MTD15N06V TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.12 OHM tance area product about onehalf tha

1.11. mtp15n06v.pdf Size:163K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06V Designer's? Data Sheet MTP15N06V TMOS V Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an onresis- 15 AMPERES tance area product about onehalf that of standard MOSFETs. This 60 VOLTS new technology m

1.12. mtd15n06vl.pdf Size:265K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD15N06VL/D Designer's? Data Sheet MTD15N06VL TMOS V? Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.085 OHM tance area product about onehalf that of standard MOSFETs.

1.13. mtp15n06vl.pdf Size:216K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06VL/D Designer's? Data Sheet MTP15N06VL TMOS V? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an onresis- 15 AMPERES tance area product about onehalf that of standard MOSFETs. This 60 VOLTS new technology more than doubles the p

1.14. phx15n06e 1.pdf Size:57K _philips2

15N06
15N06

Philips Semiconductors Product specification PowerMOS transistor PHX15N06E Isolated version of PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The VDS Drain-source voltage 60 V device is intended for use in ID Drain current (DC) 13 A Switched Mode Power Supplies Ptot T

1.15. php15n06e 1.pdf Size:53K _philips2

15N06
15N06

Philips Semiconductors Product specification PowerMOS transistor PHP15N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 15 A Switched Mode Power Supplies Ptot Total power dissipation 60 W (SMPS), motor

1.16. stp15n06l.pdf Size:382K _st

15N06
15N06

STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP15N06L 60 V < 0.15 ? 15 A STP15N06LFI 60 V < 0.15 ? 10 A TYPICAL R = 0.115 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED T

1.17. std15n06-.pdf Size:168K _st

15N06
15N06

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V < 0.1 ? 15 A TYPICAL RDS(on) = 0.075 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-2

1.18. stp15n06.pdf Size:196K _st

15N06
15N06

STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP15N06L 60 V < 0.15 ? 15 A STP15N06LFI 60 V < 0.15 ? 10 A TYPICAL RDS(on) = 0.115 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED

1.19. fdmc15n06.pdf Size:614K _fairchild_semi

15N06
15N06

July 2009 FDMC15N06 N-Channel MOSFET 55V, 15A, 0.090? Features Description RDS(on) = 0.075? ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology 100% Avalanche Tested achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable

1.20. rsq015n06.pdf Size:216K _rohm

15N06
15N06

4V Drive Nch MOSFET RSQ015N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low On-resistance. 0~0.1 2) Small Surface Mount Package (TSMT6). (1) (2) (3) 1pin mark 0.16 0.4 Abbreviated symbol : PX Application Inner circuit Switching (6) (5) (4) ?2 Packaging specifications Package Taping

1.21. rsf015n06.pdf Size:1193K _rohm

15N06
15N06

Data Sheet 4V Drive Nch MOSFET RSF015N06 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 ?Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (TUMT3). 3) Low voltage drive. (4V) Abbreviated symbol : PX ? Application Switching ? Packaging specifications ? Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 ?1

1.22. sud15n06-90l.pdf Size:90K _vishay

15N06
15N06

1.23. sqd15n06-42l.pdf Size:153K _vishay

15N06
15N06

1.24. ipd15n06s2l-64 green.pdf Size:148K _infineon

15N06
15N06

IPD15N06S2L-64 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 64 m? DS(on),max Automotive AEC Q101 qualified I 19 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD15N06S2L-64 PG-T

1.25. 15n06.pdf Size:240K _utc

15N06
15N06

UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION 1 The UTC 15N06 uses advanced trench technology to provide TO-220F excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES TO-252 * RDS(ON)<100m? @VGS=5V, ID=7.5A *

1.26. rfd15n06le-sm.pdf Size:103K _intersil

15N06
15N06

RFD15N06LE, RFD15N06LESM Data Sheet April 1999 File Number 4079.1 15A, 60V, 0.065 Ohm, ESD Rated, Logic Features Level, N-Channel Power MOSFETs • 15A, 60V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.065Ω the MegaFET process. This process, which uses feature • 2kV ESD Protected sizes approaching those of LSI circuits, gives optimum utilization of silicon,

1.27. rfp15n05l rfp15n06l.pdf Size:40K _intersil

15N06
15N06

RFP15N05L, RFP15N06L Data Sheet July 1999 File Number 1558.3 15A, 50V and 60V, 0.140 Ohm, Logic Level Features N-Channel Power MOSFETs • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.140Ω power field effect transistors designed for applications such • Design Optimized for 5V Gate Drives as switching regulators, switching converters, motor driv

1.28. hfp15n06.pdf Size:356K _shantou-huashan

15N06
15N06

 Shantou Huashan Electronic Devices Co.,Ltd. HFP15N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications TO-220 • Servo motor control. • Power MOSFET gate drivers. • DC/DC converters • Other switching applications. 1- G 2-D 3-S █ Features • 15A, 60V(See Note), RDS(on) <100mVΩ@VGS = 5V • Fast switching • 100% avalanche tested • Mini

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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