All MOSFET. 15N06 Datasheet

 

15N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 15N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 230 pF

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO-220_SOP-8_TO-252_TO-220F

15N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

15N06 Datasheet (PDF)

1.1. sqd15n06-42l.pdf Size:176K _update

15N06
15N06

SQD15N06-42L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARYd • TrenchFET® Power MOSFET VDS (V) 60 • 100 % Rg and UIS Tested RDS(on) () at VGS = 10 V 0.042 • AEC-Q101 Qualified RDS(on) () at VGS = 4.5 V 0.060 • Package with Low Thermal Resistance ID (A) 15 • Material categorization:  Configuration Single

1.2. mtd15n06vlrev2.pdf Size:179K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD15N06VL/D Designer's? Data Sheet MTD15N06VL TMOS V? Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.085 OHM tance area product about onehalf that of standard MOSFETs.

 1.3. mtd15n06vl.pdf Size:265K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD15N06VL/D Designer's? Data Sheet MTD15N06VL TMOS V? Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.085 OHM tance area product about onehalf that of standard MOSFETs.

1.4. mtp15n06vl.pdf Size:216K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06VL/D Designer's? Data Sheet MTP15N06VL TMOS V? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an onresis- 15 AMPERES tance area product about onehalf that of standard MOSFETs. This 60 VOLTS new technology more than doubles the p

 1.5. mtp15n06v.pdf Size:163K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06V Designer's? Data Sheet MTP15N06V TMOS V Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an onresis- 15 AMPERES tance area product about onehalf that of standard MOSFETs. This 60 VOLTS new technology m

1.6. mtb15n06e.pdf Size:202K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's? Data Sheet MTB15N06E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mount package

1.7. mtb15n06v.pdf Size:274K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06V/D Designer's? Data Sheet MTB15N06V TMOS V? Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresistance RDS(on) = 0.12 OHM area product about onehalf that of standard MOSFETs. This n

1.8. mtb15n06erev1.pdf Size:231K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB15N06E/D Designer's? Data Sheet MTB15N06E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES RDS(on) = 0.12 OHM The D2PAK package has the capability of housing a larger die 60 VOLTS than any existing surface mount package

1.9. mtd15n06v.pdf Size:218K _motorola

15N06
15N06

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD15N06V/D Designer's? Data Sheet MTD15N06V TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 15 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an onresis- RDS(on) = 0.12 OHM tance area product about onehalf tha

1.10. phx15n06e 1.pdf Size:57K _philips2

15N06
15N06

Philips Semiconductors Product specification PowerMOS transistor PHX15N06E Isolated version of PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The VDS Drain-source voltage 60 V device is intended for use in ID Drain current (DC) 13 A Switched Mode Power Supplies Ptot T

1.11. php15n06e 1.pdf Size:53K _philips2

15N06
15N06

Philips Semiconductors Product specification PowerMOS transistor PHP15N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 15 A Switched Mode Power Supplies Ptot Total power dissipation 60 W (SMPS), motor

1.12. std15n06-.pdf Size:168K _st

15N06
15N06

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V < 0.1 ? 15 A TYPICAL RDS(on) = 0.075 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-2

1.13. stp15n06.pdf Size:196K _st

15N06
15N06

STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP15N06L 60 V < 0.15 ? 15 A STP15N06LFI 60 V < 0.15 ? 10 A TYPICAL RDS(on) = 0.115 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED

1.14. stp15n06l.pdf Size:382K _st

15N06
15N06

STP15N06L STP15N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP15N06L 60 V < 0.15 ? 15 A STP15N06LFI 60 V < 0.15 ? 10 A TYPICAL R = 0.115 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED T

1.15. fdmc15n06.pdf Size:614K _fairchild_semi

15N06
15N06

July 2009 FDMC15N06 N-Channel MOSFET 55V, 15A, 0.090? Features Description RDS(on) = 0.075? ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology 100% Avalanche Tested achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable

1.16. rsq015n06.pdf Size:216K _rohm

15N06
15N06

4V Drive Nch MOSFET RSQ015N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low On-resistance. 0~0.1 2) Small Surface Mount Package (TSMT6). (1) (2) (3) 1pin mark 0.16 0.4 Abbreviated symbol : PX Application Inner circuit Switching (6) (5) (4) ?2 Packaging specifications Package Taping

1.17. rsf015n06.pdf Size:1193K _rohm

15N06
15N06

Data Sheet 4V Drive Nch MOSFET RSF015N06 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 ?Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (TUMT3). 3) Low voltage drive. (4V) Abbreviated symbol : PX ? Application Switching ? Packaging specifications ? Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 ?1

1.18. sqd15n06-42l.pdf Size:153K _vishay

15N06
15N06

1.19. sud15n06-90l.pdf Size:90K _vishay

15N06
15N06

1.20. ipd15n06s2l-64 green.pdf Size:148K _infineon

15N06
15N06

IPD15N06S2L-64 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 64 m? DS(on),max Automotive AEC Q101 qualified I 19 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD15N06S2L-64 PG-T

1.21. 15n06.pdf Size:240K _utc

15N06
15N06

UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION 1 The UTC 15N06 uses advanced trench technology to provide TO-220F excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES TO-252 * RDS(ON)<100m? @VGS=5V, ID=7.5A *

1.22. rfp15n05l rfp15n06l.pdf Size:40K _intersil

15N06
15N06

RFP15N05L, RFP15N06L Data Sheet July 1999 File Number 1558.3 15A, 50V and 60V, 0.140 Ohm, Logic Level Features N-Channel Power MOSFETs • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.140Ω power field effect transistors designed for applications such • Design Optimized for 5V Gate Drives as switching regulators, switching converters, motor driv

1.23. rfd15n06le-sm.pdf Size:103K _intersil

15N06
15N06

RFD15N06LE, RFD15N06LESM Data Sheet April 1999 File Number 4079.1 15A, 60V, 0.065 Ohm, ESD Rated, Logic Features Level, N-Channel Power MOSFETs • 15A, 60V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.065Ω the MegaFET process. This process, which uses feature • 2kV ESD Protected sizes approaching those of LSI circuits, gives optimum utilization of silicon,

1.24. hfp15n06.pdf Size:356K _shantou-huashan

15N06
15N06

 Shantou Huashan Electronic Devices Co.,Ltd. HFP15N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications TO-220 • Servo motor control. • Power MOSFET gate drivers. • DC/DC converters • Other switching applications. 1- G 2-D 3-S █ Features • 15A, 60V(See Note), RDS(on) <100mVΩ@VGS = 5V • Fast switching • 100% avalanche tested • Mini

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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