Справочник MOSFET. 12P10

 

12P10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 12P10

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 65 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 9.4 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 160 ns

Выходная емкость (Cd): 220 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.24 Ohm

Тип корпуса: TO-263 SOP-8 TO-251 TO-252 SOT-223 TO-220

Аналог (замена) для 12P10

 

 

12P10 Datasheet (PDF)

0.1. rfm12p08 rfm12p10.pdf Size:680K _general_electric

12P10
12P10

RFM12P08

0.2. mtp12p10rev1a.pdf Size:190K _motorola

12P10
12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorP Channel Enhancement Mode Silicon GateThis TMOS Power F

 0.3. mtp12p10.pdf Size:164K _motorola

12P10
12P10

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorP Channel Enhancement Mode Silicon GateThis TMOS Power F

0.4. strh12p10.pdf Size:457K _st

12P10
12P10

STRH12P10Rad-Hard 100 V, 12 A P-channel Power MOSFETDatasheet - production dataFeaturesVDSS ID RDS(on) Qg100V 12 A 265 m 40 nC Fast switching 100% avalanche tested Hermetic package321 100 krad TIDTO-257AA SEE radiation hardenedApplications SatelliteFigure 1. Internal schematic diagram High reliabilityD (1)DescriptionThis P-channel

 0.5. fqd12p10tf fqd12p10tm.pdf Size:666K _fairchild_semi

12P10
12P10

January 2009QFETFQD12P10 / FQU12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been espec

0.6. fqp12p10.pdf Size:1058K _fairchild_semi

12P10
12P10

November 2013FQP12P10P-Channel QFET MOSFET-100 V, -11.5 A, 290 m Description FeaturesThese P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V,transistors are produced using Fairchilds proprietary, ID = -5.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC)technology has been especial

0.7. fqd12p10tm f085.pdf Size:877K _fairchild_semi

12P10
12P10

February 2010tmFQD12P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially t

0.8. fqpf12p10.pdf Size:629K _fairchild_semi

12P10
12P10

TMQFETFQPF12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.2A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to

0.9. rfp12p08 rfp12p10.pdf Size:359K _fairchild_semi

12P10
12P10

RFP12P08, RFP12P10Data Sheet January 200212A, 80V and 100V, 0.300 Ohm, P-Channel FeaturesPower MOSFETs 12A, 80V and 100VThe RFP12P08, and RFP12P10 are P-Channel rDS(ON) = 0.300enhancement mode silicon gate power field effect transistors SOA is Power Dissipation Limiteddesigned for applications such as switching regulators, switching convertors, motor drivers, r

0.10. fqb12p10tm.pdf Size:634K _fairchild_semi

12P10
12P10

TMQFETFQB12P10 / FQI12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailo

0.11. mtm12p05 mtm12p06 mtm12p08 mtm12p10 mtp12p05 mtp12p06 mtp12p08 mtp12p10.pdf Size:90K _njs

12P10
12P10

0.12. mtp12p10-d mtp12p10g.pdf Size:72K _onsemi

12P10
12P10

MTP12P10Preferred DevicePower MOSFET12 Amps, 100 VoltsP-Channel TO-220This Power MOSFET is designed for medium voltage, high speedhttp://onsemi.compower switching applications such as switching regulators, converters,solenoid and relay drivers.12 AMPERES, 100 VOLTSFeaturesRDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times SpecifiedP-Channela

0.13. 12p10.pdf Size:259K _utc

12P10
12P10

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte

0.14. utt12p10.pdf Size:280K _utc

12P10
12P10

UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

0.15. ssd12p10.pdf Size:401K _secos

12P10
12P10

SSD12P10 2A , 650V , RDS(ON) 8 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred f

0.16. cep12p10 ceb12p10.pdf Size:126K _cet

12P10
12P10

CEP12P10/CEB12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -11A, RDS(ON) =315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

0.17. ced12p10 ceu12p10.pdf Size:252K _cet

12P10
12P10

CED12P10/CEU12P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -9A, RDS(ON) = 315m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

0.18. g12p10k.pdf Size:834K _goford

12P10
12P10

GOFORD G12P10KP-Channel Trench MOSFETDescription The G12P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS -100VSchematic diagram - ID (at VGS = 10V) -12A-RDS(ON) (at VGS = 10V)

0.19. 12p10.pdf Size:1653K _goford

12P10
12P10

GOFORD12P10Description The OGFD12P10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V -100V 170m - 12A Super high dense cell design Advanced trench process technology Reliable

0.20. fqd12p10.pdf Size:2919K _kexin

12P10
12P10

SMD Type MOSFETP-Channel MOSFETFQD12P10 (KQD12P10)TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 VDS (V) =-100V ID =-9.4 A (VGS =-10V)D RDS(ON) 290m (VGS =-10V)0.127+0.10.80-0.1max Low gate charge Low Crss+ 0.1 Fast switching 2.3 0.60- 0.1G+0.154 .60 -0.15S Absolute Maximu

0.21. chm12p10ngp.pdf Size:69K _chenmko

12P10
12P10

CHENMKO ENTERPRISE CO.,LTDCHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK )0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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