All MOSFET. 12P10 Datasheet

 

12P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 12P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: TO-263_SOP-8_TO-251_TO-252_SOT-223_TO-220

12P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12P10 Datasheet (PDF)

1.1. strh12p10.pdf Size:457K _upd

12P10
12P10

STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS(on) Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package 3 2 1 • 100 krad TID TO-257AA • SEE radiation hardened Applications • Satellite Figure 1. Internal schematic diagram • High reliability D (1) Description This P-channel

1.2. chm12p10ngp.pdf Size:69K _update_mosfet

12P10
12P10

CHENMKO ENTERPRISE CO.,LTD CHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK ) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160

 1.3. mtp12p10rev1a.pdf Size:190K _motorola

12P10
12P10

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's? Data Sheet MTP12P10 Power Field Effect Transistor PChannel EnhancementMode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS Silicon Gate

1.4. mtp12p10.pdf Size:164K _motorola

12P10
12P10

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12P10/D Designer's? Data Sheet MTP12P10 Power Field Effect Transistor PChannel EnhancementMode Silicon Gate This TMOS Power FET is designed for medium voltage, high TMOS POWER FET speed power switching applications such as switching regulators, 12 AMPERES converters, solenoid and relay drivers. 100 VOLTS Silicon Gate

 1.5. fqd12p10tm f085.pdf Size:877K _fairchild_semi

12P10
12P10

February 2010 tm FQD12P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to

1.6. fqd12p10tf fqd12p10tm.pdf Size:666K _fairchild_semi

12P10
12P10

January 2009 QFET® FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been espec

1.7. rfp12p08 rfp12p10.pdf Size:359K _fairchild_semi

12P10
12P10

RFP12P08, RFP12P10 Data Sheet January 2002 12A, 80V and 100V, 0.300 Ohm, P-Channel Features Power MOSFETs • 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel • rDS(ON) = 0.300Ω enhancement mode silicon gate power field effect transistors • SOA is Power Dissipation Limited designed for applications such as switching regulators, switching convertors, motor drivers, r

1.8. fqpf12p10.pdf Size:629K _fairchild_semi

12P10
12P10

TM QFET FQPF12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -8.2A, -100V, RDS(on) = 0.29Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially tailored to •

1.9. fqp12p10.pdf Size:1058K _fairchild_semi

12P10
12P10

November 2013 FQP12P10 P-Channel QFET® MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect • -11.5 A, -100 V, RDS(on) = 290 mΩ (Max.) @ VGS = -10 V, transistors are produced using Fairchild’s proprietary, ID = -5.75 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 21 nC) technology has been especial

1.10. fqb12p10tm.pdf Size:634K _fairchild_semi

12P10
12P10

TM QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially tailo

1.11. mtp12p10-d.pdf Size:72K _onsemi

12P10
12P10

MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P-Channel TO-220 This Power MOSFET is designed for medium voltage, high speed http://onsemi.com power switching applications such as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS Features RDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times Specified P-Channel at 100

1.12. utt12p10.pdf Size:280K _utc

12P10
12P10

UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. ? FEATURES * RDS(ON)<0.2? @ VGS=-10V, ID=-1

1.13. 12p10.pdf Size:259K _utc

12P10
12P10

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET ? DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, a

1.14. ssd12p10.pdf Size:401K _secos

12P10
12P10

SSD12P10 2A , 650V , RDS(ON) 8? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for al

1.15. ced12p10 ceu12p10.pdf Size:252K _cet

12P10
12P10

CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

1.16. cep12p10 ceb12p10.pdf Size:126K _cet

12P10
12P10

CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315m? @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

1.17. 12p10.pdf Size:1653K _goford

12P10
12P10

GOFORD 12P10 Description The OGFD12P10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V -100V 170mΩ - 12A ● Super high dense cell design ● Advanced trench process technology ● Reliable

1.18. fqd12p10.pdf Size:2919K _kexin

12P10
12P10

SMD Type MOSFET P-Channel MOSFET FQD12P10 (KQD12P10) TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 ■ Features 0.50 -0.7 ● VDS (V) =-100V ● ID =-9.4 A (VGS =-10V) D ● RDS(ON) < 290mΩ (VGS =-10V) 0.127 +0.1 0.80-0.1 max ● Low gate charge ● Low Crss + 0.1 ● Fast switching 2.3 0.60- 0.1 G +0.15 4 .60 -0.15 S ■ Absolute Maximu

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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