UNISONIC TECHNOLOGIES CO., LTD 7P20 Power MOSFET 200V P-CHANNEL MOSFET DESCRIPTION The 7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. They are also well suited for high efficiency switching DC/DC converters

April 2000TMQFETQFETQFETQFET 200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has bee

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

April 2000TMQFETQFETQFETQFETFQD7P20 / FQU7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

April 2000TMQFETQFETQFETQFET 200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -5.2A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has be

November 2008QFETFQB7P20 / FQI7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been espec

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SEMICONDUCTOR KMA3D7P20SATECHNICAL DATAP-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for use as a load switch.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20VDSS=-20V, ID=-3.7AB 1.30+0.20/-0.15C 1.30 MAXDrain to Source on-state Resistance23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20RDS(ON)=76m(Max.) @ VGS=-4.5V1G 1.90RDS(ON)=112m(Max.) @ VGS=-

PJM07P20SAP Enhancement Field Effect TransistorSOT-23Features VDS=-20V, ID=-7ARDS(on)=30m (Max.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge 1. Gate 2.Source 3.Drain ApplicationsSchematic Diagram Load Switch and in PWM ApplicationsDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise speci

isc P-Channel MOSFET Transistor FQD7P20FEATURESDrain Current I = -5.7A@ T =25D CDrain Source Voltage-: V = -200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.69(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu