MTD30N10Q8 - Даташиты. Аналоги. Основные параметры

Spec. No. : C887Q8 Issued Date : 2012.11.30 CYStech Electronics Corp.Revised Date : 2013.03.01 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTD30N10Q8ID 6ARDSON@VGS=10V, ID=6A 33m(typ) RDSON@VGS=4.5V, ID=5A 35m(typ) Description The MTD30N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3055V/DDesigner's Data SheetMTD3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.15 OHMtance area product about one

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3055V/DDesigner's Data SheetMTD3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.15 OHMtance area product about one

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o

August 1999DISTRIBUTION GROUP*MTD3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionFeatures DS(ON) GS

August 1999MTD3055V*N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features 12 A, 60 V. RDS(ON) = 0.15 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters Low gate charge.using either synchronous or conventional switchingPWM controllers. Fast switching speed.These MOSFETs

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Spec. No. : C875J3 Issued Date : 2016.01.13 CYStech Electronics Corp. Revised Date : 2016.07.06 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTD300N20J3 ID@VGS=10V, TC=25C 8.3A RDS(ON)@VGS=10V, ID=3A 302m(typ) RDS(ON)@VGS=4.5V, ID=2A 303m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-

MTD3055ELwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Moto

Isc N-Channel MOSFET Transistor MTD300N20J3FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo