MTP2317N3 - параметры транзистора MOSFET, его аналоги, datasheet

MTP2317N3 Datasheet (PDF)

..1. Size:316K cystek
mtp2317n3.pdf pdf_icon

Spec. No. : C566N3 CYStech Electronics Corp. Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20VMTP2317N3 ID -5.8A28m(typ.)RDSON@VGS=-4.5V, ID=-4.5A 35m(typ.)RDSON@VGS=-2.5V, ID=-2.5A 51m(typ.)RDSON@VGS=-1.8V, ID=-2A Features Advanced trench process technology High density cell design f

8.1. Size:290K cystek
mtp2311m3.pdf pdf_icon

Spec. No. : C733M3 Issued Date : 2013.09.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 60V P-Channel Enhancement Mode MOSFET BVDSS -60VID -4AMTP2311M3 RDSON@VGS=-10V, ID=-4A 72m(typ.) RDSON@VGS=-4.5V, ID=-3A 98m(typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol Outlin

8.2. Size:324K cystek
mtp2311v8.pdf pdf_icon

Spec. No. : C733V8 Issued Date : 2013.06.24 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60VMTP2311V8 ID -11ARDSON@VGS=10V, ID=-3A 63m(typ)RDSON@VGS=-4.5V, ID=-2A 78m(typ)Description The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized

8.3. Size:307K cystek
mtp2311n3.pdf pdf_icon

Spec. No. : C733N3 Issued Date : 2011.12.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 -60V P-CHANNEL Enhancement Mode MOSFET BVDSS -60VMTP2311N3 ID -3.5ARDSON@VGS=-10V, ID=-2A 72m(typ)RDSON@VGS=-4.5V,ID=-1.7A 98m(typ)Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .