AO340430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3404 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5Abe used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3404AO3404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3404 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 5.8A (VGS = 10V)device may be used as a load switch or in PWM RDS(ON)

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET AO3404 (KO3404) 3FeaturesVDS (V) = 30VID =5.8 A (VGS=10V)12RDS(ON) 28 m (VGS =10V) RDS(ON) 43 m (VGS =4.5V) D G SAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET AO3404 (KO3404)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = 30VID =5.8 A (VGS=10V)RDS(ON) 28 m (VGS = 10V)1 2+0.1+0.050.95 -0.1D 0.1 -0.01RDS(ON) 43 m (VGS = 4.5V)+0.11.9 -0.11.Base1. Gate2.Emitter2. SourceG3. Drain3.collectorSAbsolute Maximum Ratings Ta = 25Paramet

Plastic-Encapsulate MosfetsAO3404FEATURESN-Channel MOSFETThe AO3404 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device maybe used as a load switch or in PWM applications.D D1.Gate2.SourceSOT-233.DrainG GS SAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Value UnitDrain-source voltage VDS 3

AO3404 30V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

AO3404AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3404A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 5.8A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET AO3404 (KO3404)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13FeaturesVDS (V) = 30VID =5.8 A (VGS=10V)1 2RDS(ON) 28 m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2DRDS(ON) 43 m (VGS = 4.5V)1. Gate2. SourceG3. DrainSAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain

SMD Type MOSFETN-Channel MOSFETAO3404A (KO3404A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2 RDS(ON) 25m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 35m (VGS = 4.5V)1.9 -0.2D 1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type MOSFETN-Channel MOSFETAO3404A (KO3404A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.1+0.05 RDS(ON) 25m (VGS = 10V)0.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 35m (VGS = 4.5V)1. GateD2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

RUMWUMW AO3404AUMW AO3404AUMW AO3404AN-Channel Enhancement MOSFETSOT23 FeaturesVDS (V) = 30VID =5.8 A (VGS=10V)RDS(ON) 28 m (VGS = 10V)RDS(ON) 43 m (VGS = 4.5V)1. GATE 2. SOURCE MARKING3. DRAIN DA49TGSAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Ta=25 5.8 Continuou