Справочник MOSFET. H5N5005PL

 

H5N5005PL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: H5N5005PL

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 270 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 60 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 300 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.065 Ohm

Тип корпуса: TO3PL

Аналог (замена) для H5N5005PL

 

 

H5N5005PL Datasheet (PDF)

1.1. h5n5005pl-e0-e.pdf Size:191K _renesas

H5N5005PL
H5N5005PL

 Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300 500V - 60A - MOS FET Rev.3.00 High Speed Power Switching Mar 25, 2014 Features • Low on-resistance RDS(on) = 0.070 Ω typ. (at ID = 30 A, VGS= 10 V, Ta = 25°C) • Low leakage current • High speed switching • Low gate charge • Avalanche ratings • Built-in fast recovery diode Outline RENESAS Package cod

1.2. rej03g0419 h5n5005plds.pdf Size:154K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. rej03g1115 h5n5006ldlslmds.pdf Size:111K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. rej03g1112 h5n5001fmds.pdf Size:206K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. rej03g0397 h5n5006dlds.pdf Size:107K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. h5n5006ld h5n5006lm.pdf Size:109K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. rej03g1114 h5n5006fmds.pdf Size:100K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.6. h5n5004pl-e0-e.pdf Size:169K _renesas

H5N5005PL
H5N5005PL

 Preliminary Datasheet H5N5004PL-E0-E R07DS1198EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance R DS (on) = 0.09 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching • Low gate charge • Avalanche ratings • Built-in fast recovery diode: trr = 190 ns typ Outline

4.7. rej03g1113 h5n5004plds.pdf Size:121K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.8. rej03g1116 h5n5007pds.pdf Size:99K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS , H5N2503P , H5N5004PL , 2SK2611 , H7N0302LS , HAF1001 , HAF1002 , HAF1003 , HAF1004 , HAF1005 , HAF2001 , HAF2002 .

 

 
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