All MOSFET. H5N5005PL Datasheet

 

H5N5005PL MOSFET. Datasheet pdf. Equivalent

Type Designator: H5N5005PL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 270 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 300 nC

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: TO3PL

H5N5005PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N5005PL Datasheet (PDF)

0.1. h5n5005pl-e0-e.pdf Size:191K _renesas

H5N5005PL
H5N5005PL

 Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300 500V - 60A - MOS FET Rev.3.00 High Speed Power Switching Mar 25, 2014 Features • Low on-resistance RDS(on) = 0.070 Ω typ. (at ID = 30 A, VGS= 10 V, Ta = 25°C) • Low leakage current • High speed switching • Low gate charge • Avalanche ratings • Built-in fast recovery diode Outline RENESAS Package cod

0.2. rej03g0419 h5n5005plds.pdf Size:154K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. rej03g1115 h5n5006ldlslmds.pdf Size:111K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. rej03g1112 h5n5001fmds.pdf Size:206K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. rej03g0397 h5n5006dlds.pdf Size:107K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. h5n5006ld h5n5006lm.pdf Size:109K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. rej03g1114 h5n5006fmds.pdf Size:100K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. h5n5004pl-e0-e.pdf Size:169K _renesas

H5N5005PL
H5N5005PL

 Preliminary Datasheet H5N5004PL-E0-E R07DS1198EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance R DS (on) = 0.09 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching • Low gate charge • Avalanche ratings • Built-in fast recovery diode: trr = 190 ns typ Outline

8.7. rej03g1113 h5n5004plds.pdf Size:121K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. rej03g1116 h5n5007pds.pdf Size:99K _renesas

H5N5005PL
H5N5005PL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS , H5N2503P , H5N5004PL , 2SK2611 , H7N0302LS , HAF1001 , HAF1002 , HAF1003 , HAF1004 , HAF1005 , HAF2001 , HAF2002 .

 

 
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