HAF2001. Аналоги и основные параметры
Наименование производителя: HAF2001
Тип транзистора: FET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO220AB
Аналог (замена) для HAF2001
- подбор ⓘ MOSFET транзистора по параметрам
HAF2001 даташит
haf2007l haf2007s.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
haf2007-90s.pdf
HAF2007-90S www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo
haf2011l haf2011s.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
haf2012l haf2012s.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... H5N5004PL , H5N5005PL , H7N0302LS , HAF1001 , HAF1002 , HAF1003 , HAF1004 , HAF1005 , 7N60 , HAF2002 , HAF2005 , HAF2007 , HAF2008 , HAF2011 , HAF2012 , HAT1031T , HAT1033T .
History: FDB8444F085 | FDB8447L
History: FDB8444F085 | FDB8447L
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